Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "61.80.-x" wg kryterium: Temat


Tytuł:
Radiation Damage Centers in Cholesteryl Heptanoate
Autorzy:
Sayin, U.
Can, C.
Türkkan, E.
Dereli, Ö.
Ozmen, A.
Yüksel, H.
Powiązania:
https://bibliotekanauki.pl/articles/1399506.pdf
Data publikacji:
2013-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
Opis:
Cholesterol takes part significantly in many biological mechanisms and as important component for manufacture of bile acids, steroid hormones, and several fat-soluble vitamins. To determine magnetic properties of cholesteryl heptanoate $(C_{34}H_{58}O_2)$ which is an important cholesteryl ester in human life and new technology, the single crystals of cholesteryl heptanoate were grown by slow evaporation of concentrated ethyl acetate solution and the grown single crystals were irradiated at room temperature with $\text{}^{60}Co \gamma $ ray. The radical produced by gamma irradiation has been investigated in the range of temperatures 123-330 K for different orientations of the crystal in a magnetic field by EPR. Radiation damage center was attributed to radical $ĊH_α CH_{2β}$. The g factor and hyperfine coupling constants have slight dependence on temperature and evident dependence on the orientation of the magnetic field. Determined g factor and hyperfine coupling constants for the radical $ĊH_α CH_{2β}$ were found to be anisotropic with the average values $g_{av}=2.0036$, $(a_{CH_\alpha})_{av}=14.52 G, (a_{CH_{2\beta}})_{av}=25.78 G$.
Źródło:
Acta Physica Polonica A; 2013, 124, 1; 70-73
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of High Energy Ion Implantation on the Structure and Mechanical Properties of Aluminium Alloys
Autorzy:
Anishchik, V.
Poliak, N.
Ponaryadov, V.
Opielak, M.
Boiko, O.
Powiązania:
https://bibliotekanauki.pl/articles/1033770.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
61.80.-x
Opis:
The effect of implantation of Ne⁺, Kr⁺, and Bi⁺ ions over the energy range 26-710 MeV on the structural-phase state and the mechanical properties of the aluminum-based alloys (Al-Cu, Al-Cu-Mg, Al-Cu-Zn, Al-Mn) was studied. The revealed peculiarities of variations in the structure, phase composition, and mechanical properties of aluminum alloys are attributed to the electron deceleration of ions making the principal contribution to the formation of radiation defects which enhance the diffusion processes in the targets.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 291-294
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
New Possibilities of Swift Heavy Ion Implantation in Material Science and Technology
Autorzy:
Słowiński, B.
Powiązania:
https://bibliotekanauki.pl/articles/2011021.pdf
Data publikacji:
1999-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
61.80.Jh
Opis:
We summarise briefly the advantages of swift heavy ions (≈ 1 MeV/u) application to analysis and treating of solids in order to modify their properties. As an illustration some examples of this application are quoted.
Źródło:
Acta Physica Polonica A; 1999, 96, 2; 239-244
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Materials Modifications with Cluster Beams: Bulk and Surface Modification
Autorzy:
Dunlop, A.
Powiązania:
https://bibliotekanauki.pl/articles/2011014.pdf
Data publikacji:
1999-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.16.-d
61.80.-x
Opis:
It is now well accepted that electronic excitation and ionization arising from the slowing down of swift heavy ions can lead to structural modifications in some metallic targets as it has been known for a long time in insulators. A rapid overview of some results obtained after GeV monoatomic heavy ion irradiations will be given. It will then be shown that new specific effects take place during irradiations with cluster ions. The projectiles used are energetic cluster beams: 10 to 40 MeV Au$\text{}_{4}$ or C$\text{}_{60}$ ions. The rates of linear energy deposition in electronic excitation are close for GeV monoatomic and for 10 MeV cluster ions, but the cluster ions have characteristic velocities which are one order of magnitude smaller than those of monoatomic ions. This leads to a strong spatial localization of the deposited energy during the slowing down process. The density of deposited energy can then reach values as high as a few 100 eV/atom. This very high density of energy deposited in the electronic system of the targets can lead to spectacular structural modifications: generation in the vicinity of the ion trajectories of isolated or agglomerated point defects, new crystalline phases, amorphized regions... After an overview of such damage induced in bulk metals, semiconductors, and insulators, we will discuss surface damage, consisting in the formation of bumps, craters, "lava-flows" on the target surface.
Źródło:
Acta Physica Polonica A; 1999, 96, 2; 181-195
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Lattice Deformation in Al$\text{}_{x}$Ga$\text{}_{1-x}$As Epitaxial Layers Caused by Implantation with High Doses of 1 Mev Si Ions
Autorzy:
Wieteska, K.
Wierzchowski, W.
Graeff, W.
Turos, A.
Grötzschel, R.
Powiązania:
https://bibliotekanauki.pl/articles/2011027.pdf
Data publikacji:
1999-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.80.-x
Opis:
A series of highly perfect Al$\text{}_{0.45}$Ga$\text{}_{0.55}$ As epitaxial layers implanted with 1 MeV Si ions to the doses in a range 7×10$\text{}^{13}$-2×10$\text{}^{15}$ ions/cm$\text{}^{2}$ were studied with various conventional and synchrotron X-ray diffraction methods. The presently used methods allowed both the measurement of lattice parameter changes and strain induced deformation. The evaluation of complete strain profiles was also performed by numerical simulation of diffraction curves. It was found that the implantation induced considerable change of lattice parameter reached the maximum at the dose 3×10$\text{}^{14}$ ions/cm$\text{}^{2}$. The recorded curves proved also that the lattice parameter is almost constant in the near surface region of the implanted layers. The applied doses did not cause lattice amorphisation at room temperature.
Źródło:
Acta Physica Polonica A; 1999, 96, 2; 289-293
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interference Fringes in Synchrotron Section Topography of Implanted Silicon with a Very Large Ion Range
Autorzy:
Wieteska, K.
Wierzchowski, W.
Graeff, W.
Dłużewska, K.
Powiązania:
https://bibliotekanauki.pl/articles/1964180.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.80.-x
Opis:
Silicon crystals implanted with 9 MeV protons to the dose of 5×10$\text{}^{17}$ cm$\text{}^{-2}$ were studied with X-ray topographic methods using both conventional and synchrotron radiation sources. After the implantation the crystals were thermally and electron annealed. The implantation produced large 600 μm thick shot-through layer while the total thickness of the samples was 1.6 mm. It was confirmed by means of double crystal topography that the whole crystal was elastically bent. The transmission section patterns revealed both parts of the implanted crystal separated by strong contrasts coming from the most damaged layer and distinct interference fringes which appeared on one side of the topograph only. The location of the fringes changed when the beam entered the other side of the sample. The mechanism of fringe formation was studied with numerical integration of the Takagi-Taupin equations, especially studying the intensity distribution in the diffraction plane. The simulations reproduced the location of the fringes in different geometries and indicate that they can be caused both by variable crystal curvature and variable ion dose.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 1021-1024
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Lattice Deformation Studies in Silicon Implanted with High-Energy Protons
Autorzy:
Wieteska, K.
Dłużewska, K.
Wierzchowski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1945258.pdf
Data publikacji:
1996-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.80.-x
Opis:
The deformation of crystal lattice in silicon implanted with protons of energy 1.6-9 MeV was studied by means of X-ray topography and double-crystal rocking curve measurements. The samples were investigated as-implanted and after thermal and electron annealing. The surface relief of the implanted part of the crystal was also revealed with optical methods. As-implanted wafers exhibited spherical bending being convex at the implanted side. Thermal and electron annealing caused a dramatic increase in bending of the implanted part while the bending of the remaining part of the sample was reduced. A characteristic behaviour of a double-crystal topographic contrast in the annealed crystals was explained due to bending of the shot-through layer along the Gaussian profile.
Źródło:
Acta Physica Polonica A; 1996, 89, 3; 395-400
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Spin-Lattice Relaxation in Polymers and Crystals Related to Disorder and Structure Defects
Autorzy:
Hoffmann, S. K.
Hilczer, W.
Radczyk, T.
Polus, I.
Powiązania:
https://bibliotekanauki.pl/articles/2035737.pdf
Data publikacji:
2003-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.41.+e
61.80.-x
76.30.-v
Opis:
Temperature dependences (4-300 K) of the electron spin-lattice relaxation have been determined by electron spin echo technique for free radicals in two polymeric systems: phenol-formaldehyde resin and polyhydrazodisulphide. The dependences are described in terms of dynamics specific for amorphous systems involving two-level tunnelling states at low temperatures, exchange-coupled clusters of paramagnetic centres and local oscillators. Some universal temperature behaviour of the spin-lattice relaxation of amorphous systems is suggested, with a strong increase in relaxation rate with temperature at low temperatures and much weaker increase above 50 K with characteristic linear temperature dependence in a broad temperature range and cosech(Δ/kT) -type behaviour. It is also shown that the amorphous-type behaviour appears in low temperatures relaxation studies of single crystals but it is due to a non-uniform distribution of doped paramagnetic ions. Such behaviour we have found in Tutton salt crystals doped with Cu$\text{}^{2+}$, as well as for free radical centres produced by ionising irradiation in (NH$\text{}_{4}$)$\text{}_{3}$H(SeO$\text{}_{4}$)$\text{}_{2}$ and Li(N$\text{}_{2}$H$\text{}_{5}$)SO$\text{}_{4}$ single crystals, where extended phonons are suppressed around radiation damage centres suggesting a local amorphisation of the crystal structure.zapisz i p
Źródło:
Acta Physica Polonica A; 2003, 103, 4; 373-385
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Doping and Irradiation Dependence of Electrical Conductivity of $Fe^{3+}$ and $Ni^{2+}$ Doped Polyvinyl Alcohol Films
Autorzy:
Vijaya Kumar, G.
Chandramani, R.
Powiązania:
https://bibliotekanauki.pl/articles/1537708.pdf
Data publikacji:
2010-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
72.80.Le
61.80.x
Opis:
PVA and doped PVA films were prepared by solution casting. The Change in electrical conductivity of pure PVA and transition elements $FeCl_3$ and $NiCl_2 \cdot 6H_2O$ doped PVA films with and without γ-irradiation in the temperature range 50-130°C has been investigated using four point probe technique. The dc electrical conductivity increases with increase in dopant concentration, with temperature and γ-irradiation. The results revealed that γ-irradiation enhances the electrical conductivity. The variation of electrical conductivity σ with temperature, before and after irradiation is due to the intermolecular hydrogen bonding between $Fe^{3+}$ with OH group of PVA and $Ni^{2+}$ with OH group of PVA. We found that $Fe^{3+}$ doped PVA films show higher conductivity than $Ni^{2+}$ doped PVA films.
Źródło:
Acta Physica Polonica A; 2010, 117, 6; 917-920
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Time Decay of Stable Absorption of Gamma Irradiated LNO, LNO:Cu and YAP:Ce Crystals
Autorzy:
Potera, P.
Powiązania:
https://bibliotekanauki.pl/articles/1205403.pdf
Data publikacji:
2014-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
78.40.-q
61.72.jn
Opis:
The present work is devoted to investigation of stability of stable color centers that are induced by gamma radiation in pure $LiNbO_{3}$, Cu-doped $LiNbO_{3}$ and Ce-doped $YAlO_{3}$ single crystals
Źródło:
Acta Physica Polonica A; 2014, 126, 3; 774-776
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies