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Wyświetlanie 1-15 z 32
Tytuł:
Jump Mechanism of Electric Charge Transfer in Gallium Arsenide Exposed to Polyenergy Implantation with $H^{+}$ Ions
Autorzy:
Żukowski, P.
Węgierek, P.
Billewicz, P.
Kołtunowicz, T.
Komarov, F.
Powiązania:
https://bibliotekanauki.pl/articles/1504001.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
61.72.Cc
72.80.Ey
Opis:
The article presents the experimental results on electric conductivity investigations of gallium arsenide, exposed to polyenergy implantations with $H^{+}$ ions, depending on alternating current frequency (50 Hz ÷ 5 MHz), testing temperature (liquid nitrogen temperature ÷ 373 K) and the temperature of 15 min isochronous annealing (293 ÷ 663 K). It has been found that the obtained dependences σ ($T_{p},$ f) result from a jump mechanism of electric charge transfer between the radiation defects that form in the process of ion implantation. Correlations between annealing of various types of radiation defects and conductivity characteristics σ ($T_{p}$, f) have also been discussed.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 125-128
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of Non-Polar ZnO Layers with Positron Annihilation Spectroscopy
Autorzy:
Zubiaga, A.
Tuomisto, F.
Zúñiga-Pérez, J.
Muñoz-San José, V.
Powiązania:
https://bibliotekanauki.pl/articles/1811964.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
68.55.Ln
68.37.-d
78.70.Bj
Opis:
We applied positron annihilation spectroscopy to study the effect of growth polarity on the vacancy defects in ZnO grown by metal-organic vapor phase deposition on sapphire. Both c-plane and a-plane ZnO layers were measured, and Zn vacancies were identified as the dominant defects detected by positrons. The results are qualitatively similar to those of earlier experiments in GaN. The Zn vacancy concentration decreases in c-plane ZnO by almost one order of magnitude (from high $10^{17} cm^{-3}$ to low $10^{17} cm^{-3}$) when the layer thickness is increased from 0.5 to 2 μm. Interestingly, in a-plane ZnO the Zn vacancy concentration is constant at a level of about $2×10^{17} cm^{-3}$ in all the samples with thicknesses varying from 0.6 to 2.4 μm. The anisotropy of the Doppler broadening of the annihilation radiation parallel and perpendicular to the hexagonal c-axis was also measured.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1257-1264
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Analysis of Interaction of Surfactant Molecules with Si(hkl) Planes on the Basis of Anisotropic Etching in Alkaline Solutions
Autorzy:
Zubel, I.
Kramkowska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1807532.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.30.Hn
61.72.uj
64.70.kg
Opis:
In the paper, measurements of surface tension of solutions used for silicon etching and results of etching in the solutions are presented. Based on the obtained results, the analysis of interactions of surfactants with differently oriented silicon planes has been carried out.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-105-S-107
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and Optical Properties of ZnO Nanowires Doped with Magnesium
Autorzy:
Zhuang, H.
Wang, J.
Liu, H.
Li, J.
Xu, P.
Powiązania:
https://bibliotekanauki.pl/articles/1505046.pdf
Data publikacji:
2011-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.46.Km
61.72.uj
81.15.Gh
78.67.-n
Opis:
ZnO nanowires doped with Mg have been successfully prepared on Au-coated Si (111) substrates using chemical vapor deposition method with a mixture of ZnO, Mg, and activated carbon powders as reactants at 850°C. The structural, compositional, morphological and optical properties of the samples were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, high-resolution transmission electron microscopy, and photoluminescence spectroscopy. The nanowires are single crystalline in nature and preferentially grow up along [0001] direction with the average diameter and length of about 60 nm and several hundred micrometers, respectively, thinner and longer than the results of literature using the similar method. Room temperature photoluminescence spectroscopy shows a blueshift from the bulk band gap emission, which can be attributed to Mg doping that were detected by energy dispersive X-ray analysis EDX in the nanowires. Finally, the possible growth mechanism of crystalline ZnO nanowires is discussed briefly.
Źródło:
Acta Physica Polonica A; 2011, 119, 6; 819-823
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Changes in the Activation Energy of Radiation Defects in Strongly Defected Silicon Depending on the Type and Concentration of Dopant
Autorzy:
Węgierek, P.
Billewicz, P.
Powiązania:
https://bibliotekanauki.pl/articles/1382904.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
61.72.Cc
72.80.Ey
Opis:
The article presents the outcome of the research on alternating-current electric conduction in silicon doped with boron, phosphorus, and antimony of resistivities ρ=0.01 Ω cm and ρ=10 Ω cm, strongly defected by the implantation of $Ne^{+}$ ions (D=1.5 × $10^{14}$ $cm^{-2}$, E=100 keV). On the basis of results obtained for samples annealed at the temperature $T_{a}$=598 K and measured at the testing temperature $T_{p}$=298 K and frequency f=1 MHz it was possible to carry out an analysis of mechanisms of electric conduction depending on the type and concentration of dopant. Obtained results confirmed the occurrence of hopping conductivity mechanism in strongly defected semiconductors, which is typical for high frequency values.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1392-1395
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Temperature on Electrical Parameters of GaAs in the Aspect of Applications in Photovoltaics
Autorzy:
Węgierek, P.
Billewicz, P.
Powiązania:
https://bibliotekanauki.pl/articles/1402217.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
61.72.Cc
72.80.Ey
Opis:
The article describes the results of the research on thermal stability of electrical parameters of n-type gallium arsenide doped with tellurium, defected by ion implantation, measured at the operating temperature ranging from 77 K to 373 K. The aim of the work is to investigate the character of changes in the values of such electrical parameters as resistivity, capacity and loss tangent of the tested GaAs samples, exposed to different thermal conditions. Temperature dependences analyzed in the paper could be taken as a basis to formulate general speculations concerning potential applications of the tested material as a substrate in the process of photovoltaic cells production. The phenomenon of conversion of solar energy into electricity is strongly connected with electrical properties of photovoltaic cell substrate material and its internal structure. Moreover, the efficiency of photoconversion is affected by such factors as charge carrier lifetime distribution and diffusion length in the base material. Therefore, it is necessary to confirm what is the character of the influence of operating temperature on the electrical parameters of GaAs and what modification could be introduced in the material in order to increase the efficiency of photoconversion.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 875-878
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Jump Mechanism of Electric Conduction in n-Type Silicon Implanted with $Ne^{++}$ Neon Ions
Autorzy:
Węgierek, P.
Billewicz, P.
Powiązania:
https://bibliotekanauki.pl/articles/1504000.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
61.72.Cc
72.80.Ey
Opis:
The article presents the results of research on alternating-current electrical conduction in phosphorus-doped silicon, strongly defected by the implantation of $Ne^{++}$ neon ions. An analysis of electrical properties recorded at the annealing temperature of $T_{a}$ = 373 K and affected by the changes of testing temperature ranging from 253 K to 368 K as well as frequency from 50 Hz to 5 MHz has been discussed. The obtained results have confirmed the occurrence of two conduction mechanisms in strongly defected semiconductors: the band conduction mechanism that is characteristic of low frequency values and the jump conduction one that corresponds to higher frequencies.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 122-124
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Research on Mechanisms of Electric Conduction in the p-Type Silicon Implanted with $Ne^{+}$ Ions
Autorzy:
Węgierek, P.
Billewicz, P.
Powiązania:
https://bibliotekanauki.pl/articles/1400487.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
61.72.Cc
72.80.Ey
Opis:
The article presents the results of research on alternating-current electric conduction in boron-doped silicon (ρ = 10 Ω cm), strongly defected by the implantation of $Ne^{+}$ ions (D = $1.5 \times 10^{14} cm^{-2}$, E = 100 keV). The analysis of changes in electrical characteristics recorded at the sample annealing temperature of $T_{a}$ = 373 K has been presented, concerning the influence of the testing temperature ranging from 253 K to 368 K as well as the frequency from 50 Hz to 5 MHz. The obtained results have confirmed the occurrence of two electric conduction mechanisms in strongly defected semiconductors, such as the band conduction mechanism that is characteristic of low frequency values and the jump conduction one that corresponds to higher frequencies.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 948-951
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Research on Thermal Stability of Electrical Parameters of Silicon Used in PV Cells Production Process
Autorzy:
Węgierek, P.
Billewicz, P.
Powiązania:
https://bibliotekanauki.pl/articles/1402240.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
61.72.Cc
72.80.Ey
Opis:
Considering the results of recent research, it is possible to state that the problem of thermal stability of electrical parameters of silicon is very important in the context of efficiency of commonly used photovoltaic cells. Subsequent investigations confirmed that the efficiency of photovoltaic cells is strongly influenced by active defects of silicon crystal lattice. Those defects, arising in the process of photovoltaic cells base material preparation, are responsible for changes in the values of conductivity and activation energy of the tested material. Taking this into consideration, it is reasonable to carry out research oriented at experimental verification of the influence of both operating temperature on the electrical parameters of silicon and annealing temperature on the distribution of radiation defects in the silicon substrate used in the production of photovoltaic cells. The main purpose of this work is a comparative analysis of dependences of electrical parameters of silicon on temperature. The article presents the results of the research on resistivity and capacity of silicon samples (doped with boron and phosphorus) whose structure was modified by the ion implantation process.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 943-945
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Plasma Ion Source with an Internal Evaporator
Autorzy:
Turek, M.
Droździel, A.
Pyszniak, K.
Prucnal, S.
Mączka, D.
Powiązania:
https://bibliotekanauki.pl/articles/1504137.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.77.Ka
34.80.Dp
61.72.uj
Opis:
A new construction of a hollow cathode ion source equipped with an internal evaporator heated by a spiral cathode filament and arc discharge is presented. The source is especially suitable for production of ions from solids. The proximity of arc discharge region and extraction opening enables production of intense ion beams even for very low discharge current ($I_{a}$ = 1.2 A). The currents of 50 μA $(Al^{+})$ and 70 μA $(Bi^{+})$ were obtained using the extraction voltage of 25 kV. The source is able to work for several tens of hours without maintenance breaks, giving possibility of high dose implantations. The paper presents the detailed description of the ion source as well as its experimental characteristics like dependences of extracted currents and anode voltage on anode and cathode currents.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 184-187
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Production of $Mo^{+}$ Beams Using an Arc Discharge Ion Source
Autorzy:
Turek, M.
Droździel, A.
Pyszniak, K.
Prucnal, S.
Mączka, D.
Powiązania:
https://bibliotekanauki.pl/articles/1383005.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.77.Ka
34.80.Dp
61.72.uj
Opis:
A new method of $Mo^{+}$ ion beam production is presented in the paper. The method bases on the chemical sputtering/etching of the molybdenum parts (e.g. anode) of the arc discharge ion source by the chloride containing plasma. A mixture of $CCl_4$ (or $CHCl_3$) vapor and air was used as the feeding substance. The separated $Mo^{+}$ beam current of approximately 18 μA was achieved. The measurements of the ion current dependences on the discharge and filament currents as well as on the magnetic field flux density from the electromagnet surrounding the discharge chamber were performed in order to find the optimal working parameters of the ion source.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1388-1391
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Production of Doubly Charged Ions Using a Hollow Cathode Ion Source with an Evaporator
Autorzy:
Turek, M.
Droździel, A.
Pyszniak, K.
Mączka, D.
Słowiński, B.
Powiązania:
https://bibliotekanauki.pl/articles/1400444.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.77.Ka
34.80.Dp
61.72.uj
Opis:
The paper describes the production of doubly charged ions from solids and gases using a hollow cathode ion source with an internal evaporator heated by a spiral cathode filament and arc discharge. The obtained currents were 15 μA for $Bi^{2+}$, 10 μA for $As^{2+}$ and $Al^{2+}$, 8 μA for $Kr^{2+}$ and $Xe^{2+}$, 5 μA for $In^{2+}$ and $Ge^{2+}$, enabling moderate dose implantations ( ≈ $10^{15} cm^{-3}$) with doubly charged ions. Characteristics of the ion source are presented and discussed in order to choose the optimal working parameters. A brief presentation of numerical model of doubly and singly charged ions in the ion source is given. The calculated results (dependences of ion current on the anode voltage) are in good agreement with the experimental data.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 843-846
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Production of Molybdenum and Tantalum Ion Beams using CCl₂F₂
Autorzy:
Turek, M.
Droździel, A.
Pyszniak, K.
Filiks, J.
Prucnal, S.
Mączka, D.
Vaganov, Yu.
Węgierek, P.
Powiązania:
https://bibliotekanauki.pl/articles/1033135.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.77.Ka
34.80.Dp
61.72.uj
Opis:
A new method of refractory metal (like Mo and Ta) ion beam production using the arc discharge ion source and CCl₂F₂ (dichlorodifluoromethane) used as a feeding gas supported into the discharge chamber is presented. It is based on etching of the refractory metal parts (e.g. anode or a dedicated tube) Cl and F containing plasma. The results of measurements of the dependences of ion currents on the working parameters like discharge and filament currents as well as on the magnetic field flux density of an external electromagnet coil are shown and discussed. The separated Mo⁺ and Ta⁺ beam currents of approximately 22 μA and 2 μA, respectively, were obtained.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 283-287
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Tailoring the Internal Evaporator for Effective Ion Beam Production - Volatile vs. Non-Volatile Substances
Autorzy:
Turek, M.
Droździel, A.
Pyszniak, K.
Prucnal, S.
Powiązania:
https://bibliotekanauki.pl/articles/1402239.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.77.Ka
34.80.Dp
61.72.uj
Opis:
Two different designs of the internal evaporator in an arc discharge ion source are presented, suitable either for volatile, or high-melting point substances. A matter of the evaporator size and placement in order to obtain its appropriate temperature and, therefore, a stable and intense ion beam, is considered. Basic ion source characteristics, i.e. the dependences of ion current and discharge voltage on the discharge and filament currents as well as on the external magnetic field flux density are shown and discussed in order to find optimal working conditions. The results of measurements for both volatile (P, Zn, Se, S) and non-volatile (Pd) are presented, showing the applicability of the design for ion implantation purposes.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 939-942
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Studies of Magnetoresistance in GaAs:Te Crystals with Structural Disorder at Doping Limit
Autorzy:
Tarkowski, T.
Słupiński, T.
Karpierz, K.
Powiązania:
https://bibliotekanauki.pl/articles/2048144.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
61.72.uj
72.20.My
Opis:
Transverse magnetoresistance was studied in monocrystalline GaAs:Te doped above the equilibrium doping limit and annealed to partially deactivate donor impurities. It is shown that in a sample with partial deactivation of Te impurities, which exhibits structural fluctuations in microscale, both strong positive and some negative magnetoresistances arise, which are difficult to understand within the relaxation time approximation in degenerated homogeneous semiconductor. It is discussed that a consideration of the role of spatial fluctuations (in carrier concentration, conductivity, etc.), e.g. as proposed by Herring, allows for an understanding of positive component of magnetoresistance observed in the sample with a distinct microscopic structural disorder. With the aim to better understand the transport in GaAs:Te, a model material doped above the doping limit, we discuss both positive and negative components of measured magnetoresistance.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 726-728
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 32

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