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Wyszukujesz frazę "61.72.Qq" wg kryterium: Temat

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    Wyświetlanie 1-5 z 5
    Tytuł:
    Octagonal Defects as the Source of Gap States in Graphene Semiconducting Structures
    Autorzy:
    Pelc, M.
    Jaskólski, W.
    Ayuela, A.
    Chico, L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399079.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.22.Pr
    61.72.Qq
    Opis:
    We study graphene nanoribbons and carbon nanotubes with divacancies, i.e., local defects composed of one octagon and a pair of pentagons. We show that the presence of divacancies leads to the appearance of gap states, which may act as acceptor or donor states. We explain the origin of those defect-localized states and prove that they are directly related to the zero-energy states of carbon ring forming the octagonal topological defect.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 777-780
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Conventional and Synchrotron X-Ray Topography of Defects in the Core Region of $SrLaGaO_4$
    Autorzy:
    Malinowska, A.
    Lefeld-Sosnowska, M.
    Wieteska, K.
    Wierzchowski, W.
    Pajączkowska, A.
    Graeff, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812255.pdf
    Data publikacji:
    2008-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Ff
    61.72.Nn
    61.72.Lk
    61.72.Qq
    Opis:
    $SrLaGaO_4$ single crystals are perspective substrate materials for high temperature superconductors thin films, elements of thermal radiation receivers and other electronic devices. The defect structure of the Czochralski grown $SrLaGaO_4$ crystal was investigated by means of X-ray topography exploring both conventional and synchrotron sources. The crystal lattice defects in the core region of the crystal were investigated. The regular network of defects arranged in rows only in ⟨100⟩ direction was observed. Owing to high resolution of synchrotron radiation white beam back reflection topographs one can distinguish individual spots forming the lines of the rows. It can be supposed that these elongated rod-like volume defects are located in 100 lattice planes forming a kind of walls. They are built approximately of the same phase as crystal but crystallize at a different moment than a rest of the crystal due to the constitutional supercooling.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 2; 433-438
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Correlation between Copper Precipitation and Grown-In Oxygen Precipitates in 300 mm Czochralski Silicon Wafer
    Autorzy:
    Dong, P.
    Ma, X.
    Yang, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1361181.pdf
    Data publikacji:
    2014-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Ff
    61.72.Ji
    61.72.Qq
    61.72.Yx
    61.72.Cc
    Opis:
    The behaviors of copper (Cu) precipitation along the radial direction of the 300 mm Czochralski grown silicon wafer have been investigated. It is found that the density of Cu precipitates decreases from the center to edge of the silicon wafer. Moreover, it is revealed that the density of grown-in oxygen precipitates also decreases along the radial direction as mentioned above. Therefore, it is apparent that the Cu precipitate density is positively correlative to the grown-in oxygen precipitate density. This is due to that the grown-in oxygen precipitates can serve as the heterogeneous nucleation centers for Cu precipitation. It is suggested that the Cu decoration in combination with preferential etching can be used to indirectly evaluate the radial distribution of grown-in oxygen precipitates in the silicon wafers.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 4; 972-975
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoluminescence Analysis of Oxygen Precipitation around Small-Angle Grain Boundaries in Multicrystalline Silicon Wafers
    Autorzy:
    Kato, G.
    Tajima, M.
    Okayama, F.
    Tokumaru, S.
    Sato, R.
    Toyota, H.
    Ogura, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1382111.pdf
    Data publikacji:
    2014-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Ap
    61.72.Qq
    82.80.Rt
    88.40.jj
    Opis:
    We have investigated the correlation between deep-level photoluminescence and the density of small-angle grain boundaries in multicrystalline Si. A deep-level photoluminescence component around 0.87 eV, which we previously ascribed to oxygen precipitates, became lower and higher in the region with high and low density of small-angle grain boundaries, respectively. This can be explained by the differences in the availability of oxygen atoms around respective small-angle grain boundaries. We performed focused ion beam time-of-flight secondary ion mass spectroscopy on special points emitting extremely strong 0.87 eV emission, and detected a clustered area of $\text{}^16O¯$. This is strong evidence for the idea that the 0.87 eV band is due to oxygen precipitates.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 4; 1010-1012
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Transmission Electron Microscopy Studies of Kr$\text{}^{+}$-Implanted Silicon
    Autorzy:
    Morawiec, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1931308.pdf
    Data publikacji:
    1994-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.16.Bg
    61.72.Ff
    61.72.Qq
    61.72.Tt
    68.35.Fx
    81.40.Gh
    Opis:
    The structure and the depth distribution of radiation damage caused in ⟨111⟩ Si by high-dose krypton implantations (E$\text{}_{i}$ = 150 keV, T$\text{}_{i}$ = RT, D$\text{}_{1}$ = 5 × 10$\text{}^{15}$, D$\text{}_{2}$ = 1 × 10$\text{}^{16}$ and D$\text{}_{3}$ = 5 × 10$\text{}^{16}$ cm$\text{}^{-2}$) have been investigated using techniques of transmission electron microscopy. Formation of secondary defects (Kr bubbles and microtwins) on subsequent different annealing procedures, i.e. during solid phase epitaxial regrowth of damaged layers by conventional furnace heating and liquid phase epitaxial regrowth by applying laser pulses is compared and discussed.
    Źródło:
    Acta Physica Polonica A; 1994, 85, 5; 819-824
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

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