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Tytuł:
X-Ray Topographic Study of a Homoepitaxial Diamond Layer on an Ultraviolet-Irradiated Precision Polished Substrate
Autorzy:
Kato, Y.
Umezawa, H.
Shikata, S.
Powiązania:
https://bibliotekanauki.pl/articles/1197907.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
81.05.ug
Opis:
Suitable techniques for the growth of high-quality single-crystal diamond are needed in order to use single-crystal diamond in power devices. Because the ion plantation technique cannot be used for diamond doping, a drift layer and a conduction layer for a diamond power device were grown by chemical vapor deposition. An important challenge in this field is to reduce the dislocation density in the epitaxial layer. The dislocation density was found to increase during the chemical vapor deposition process. Because a defective surface is one cause of increased dislocation density, the use of a UV-polished substrate having no scratches due to mechanical polishing was investigated.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 969-971
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Will Czochralski Growth of Sapphire Once Again Prevail?
Autorzy:
Bruni, F.
Liu, C.
Stone-Sundberg, J.
Powiązania:
https://bibliotekanauki.pl/articles/1399423.pdf
Data publikacji:
2013-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Fq
81.10.Aj
61.72.-y
Opis:
In the past decade there has been an explosive growth in the consumption of sapphire driven by the demands of the next generation of energy efficient general lighting based on GaN LEDs. This application requires orienting these rhombohedral corundum crystals such that the substrate surface is the c-plane; a basal plane defined using hexagonal axes. Sapphire crystals form a strong facet on the c-plane, and growth in that direction generally results in crystals with high defect densities, particularly dislocations, and low angle grain boundaries. To overcome this drawback, the usual methodology is to grow the crystal in the a-direction and then core drill rods perpendicularly which are then sliced into c-plane substrates. For all crystal growth techniques commonly employed for sapphire, this approach suffers from poor material utilization. Although this has generally been viewed as an acceptable trade-off in the manufacturing process as long as 2" substrates were the dominant market, as substrate diameters have increased towards 150 mm and larger, this compromise is no longer seen as a viable alternative because of the low material utilization and the high energy consumption of the growth process. This has led to a renewed look at the Czochralski process for more efficient c-axis substrate production.
Źródło:
Acta Physica Polonica A; 2013, 124, 2; 213-218
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
What Types of Stacking Faults and Dislocation Dissociations Can Be Found in Transition-Metal Disilicides
Autorzy:
Paidar, V.
Čák, M.
Šob, M.
Inui, H.
Powiązania:
https://bibliotekanauki.pl/articles/1402088.pdf
Data publikacji:
2015-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
Opis:
Identical atomic planes of transition-metal disilicides can form different stacking when they are ordered in several combinations of four different positions A, B, C, D. The following arrangements can be formed: AB in C11_b structure of e.g. MoSi₂, ABC in C40 structure of e.g. VSi₂ and ABDC in C54 structure of e.g. TiSi₂ disilicides. The ABC atomic plane stacking along the ⟨111⟩ cubic directions is well known in the fcc lattice, where three basic types of stacking faults are known: intrinsic or extrinsic faults and elementary twin, however, other types of stacking faults can be detected in transition-metal disilicides due to the occurrence of the fourth position D. On the other hand, the faults well known in metallic systems as antiphase boundaries need not be metastable in disilicides. Based on the results of ab initio calculations, it can be predicted which types of planar defects are metastable corresponding to the local minima on the energy surface of generalized stacking faults or unstable when they are represented, for example, by saddle points. The character of dissociation of the dislocation cores is directly related to the existence of metastable stacking faults. Moreover, the space distribution of dislocation cores has a direct impact on dislocation mobility and, therefore, also on macroscopic mechanical properties of materials. The behaviour of extended crystal defects in disilicides that is caused by covalent interatomic bonding, is discussed starting from the geometrical analysis, and it is demonstrated that predictions of materials properties can be deduced.
Źródło:
Acta Physica Polonica A; 2015, 128, 4; 589-591
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thermoluminescent Mechanism in Lilac Spodumene
Autorzy:
Souza, S. O.
Watanabe, S.
Lima, A. F.
Lalic, M. V.
Powiązania:
https://bibliotekanauki.pl/articles/2047867.pdf
Data publikacji:
2007-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
91.60.-x
78.60.Kn
61.72.-y
Opis:
In the present work the thermoluminescence of a lilac α-spodumene (LiAlSi$\text{}_{2}$O$\text{}_{6}$), a natural mineral from Brazil, was investigated. Toward this aim the gamma irradiation, as well as several heating processes were carried out. The sample presented a glow curve with various thermoluminescence peaks. Emission spectrum showed only one prominent band at 610 nm, which indicates the existence of only one recombination center despite the several thermoluminescence centers exhibited, due to intrinsic defects. Using correlation between thermoluminescence and optical absorption techniques we discuss the effects of gamma radiation and annealing in the lilac spodumene, and conclude that an annealing at about 230ºC can be applied to natural lilac spodumene gems used in jewelry for increment of its lilac color.
Źródło:
Acta Physica Polonica A; 2007, 112, 5; 1001-1006
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Theoretical Study of the Ferroelastic Domain Structure in $La_{0.95}Sr_{0.05}Ga_{0.9}Mg_{0.1}O_{3-x}$
Autorzy:
Savytskii, D.
Tataryn, T.
Martynyuk, N.
Bismayer, U.
Powiązania:
https://bibliotekanauki.pl/articles/1550058.pdf
Data publikacji:
2010-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Mm
61.72.-y
61.50.Ah
Opis:
Theoretical analysis of the ferro-elastic domain structure of a $La_{0.95}Sr_{0.05}Ga_{0.9}Mg_{0.1}O_{2.925}$ crystal in three different crystallographic phases is presented. Parameters of these configurations are obtained using group theoretical approach, the method of spontaneous deformation as well as theoretical interpretation of twinning resulting from mechanical deformation (mechanical twinning theory). In the three phases of $La_{0.95}Sr_{0.05}Ga_{0.9}Mg_{0.1}O_{2.95}$ - trigonal, orthorhombic and monoclinic - the parameters of ferro-elastic domain structures are determined; namely the quantity of orientation states, symmetry elements of connection between states, orientations and types of domain walls, tensors of spontaneous deformations of the perovskite-type cells for every orientation state, elements of twin shifts, which are needed for the reorientation of some orientation states to others. By using the found parameters of bidomain configurations a mechanism is proposed, which causes chevron-like domain configurations in compounds with martensitic phase transitions.
Źródło:
Acta Physica Polonica A; 2010, 117, 1; 48-61
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Influence of the Defect Structure on the Nitriding of Fe by PIII
Autorzy:
De Baerdemaeker, J.
Jirásková, Y.
Schaaf, P.
Segers, D.
Dauwe, C.
Powiązania:
https://bibliotekanauki.pl/articles/2043328.pdf
Data publikacji:
2005-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
61.80.-x
71.60.+z
78.70.Bj
Opis:
Plasma ion immersion implantation is a promising technique for nitriding. A case study of the characterization of the plasma ion immersion implantation nitriding of iron alloys is the plasma ion immersion implantation nitriding of pure Fe. A set of Fe samples of 99.98% purity and with different defect structure was plasma ion immersion implantation nitrided at different temperatures. Depth profiling of the samples was achieved using positron annihilation spectroscopy with a slow positron beam and nanoindentation. A correspondence was found between the line shape parameter S and the hardness of the plasma ion immersion implantation treated samples.
Źródło:
Acta Physica Polonica A; 2005, 107, 5; 817-820
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The H$\text{}_{2}$ Molecule in Semiconductors: An Angel in GaAs, a Devil in Si
Autorzy:
Estreicher, S. K.
Powiązania:
https://bibliotekanauki.pl/articles/2035568.pdf
Data publikacji:
2002
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
66.30.Lw
72.10.Fk
Opis:
The electrical and optical properties of semiconductors are largely determined by the defects and impurities they contain. Without a doubt, hydrogen is the impurity which exhibits the most varied and exotic properties. In most semiconductors, it is found in three charge states and four configurations. It forms (at least) two types of dimers as well as small and large precipitates such as platelets. H also interacts with impurities and defects. It removes or changes the electrical activity of many shallow and deep centers, and catalyzes the diffusion of interstitial oxygen (in Si). Sometimes, it exhibits quantum tunneling and is associated with unusual effects such as Fermi resonances. But one of the most exotic forms of hydrogen in GaAs and Si is the interstitial H$\text{}_{2}$ molecule, which appears to play a critical role in processes such as the "smart cut". It is the only interstitial molecule observed (so far) in semiconductors. In GaAs, it behaves like a nearly-free rotator, with properties very much as one would expect them to be. But in Si, the early experiments were puzzling. No ortho/para splitting was observed, the symmetry appeared to be C$\text{}_{1}$, the single HD line was at the wrong place and had the wrong amplitude, and other features seemed strange as well. Recent experimental studies have now resolved many issues. However, the behavior of the simplest molecule in the Universe proved to be a tough nut to crack, which goes to show that devils can be a lot more fun than angels after all.
Źródło:
Acta Physica Polonica A; 2002, 102, 4-5; 513-528
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The effect of Sm addition on the microstructure and superconducting properties of YBCO bulk superconductors
Autorzy:
Volochová, D.
Diko, P.
Piovarči, S.
Antal, V.
Kováč, J.
Jirsa, M.
Powiązania:
https://bibliotekanauki.pl/articles/1054772.pdf
Data publikacji:
2017-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.72.-h
74.62.Dh
81.10.Fq
61.72.-y
74.25.Ha
74.25.Sv
Opis:
The effect of Sm addition on the microstructure and superconducting properties of Y-Ba-Cu-O (YBCO) bulk superconductors has been studied. Nominal composition: 1 mol YBa₂Cu₃O_{7-δ} + 0.25 mol Y₂O₃ + 1 wt% CeO₂ was enriched with different amounts of SmBa₂Cu₃O_y powder with the aim to increase critical current density, J_c, especially in higher magnetic fields by introducing additional pinning centers. Single grain YBCO bulk superconductors with SmBa₂Cu₃O_y (Y123-Sm) addition were prepared by the optimized top seeded melt growth process. Microstructure analysis, performed by polarized light microscope, revealed that SmBa₂Cu₃O_y addition leads to a higher amount of slightly coarser Y₂BaCuO₅ particles, which is related to lower critical current densities (J_c ≈ 6×10⁴ A/cm²) of the YBCO samples with SmBa₂Cu₃O_y addition in low magnetic fields. On the other hand, an enhancement of critical current density, J_c, in higher magnetic fields was observed for Y123-Sm samples. Moreover, a maximum trapped magnetic field, B_{tmax}, of 564 mT at 77 K in Y123-Sm, x=0.0025 sample (Ø 17.2 mm) was 43% higher than that for YBCO sample without any addition.
Źródło:
Acta Physica Polonica A; 2017, 131, 4; 1009-1011
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Effect of $P_2O_5$ and Heat Treatment on the Crystallization of $Li_2O \cdot 2SiO_2 - BaO \cdot 2SiO_2 (LS_2 - BS_2)$ Glass
Autorzy:
Ertuğ, B.
Demirkesen, E.
Powiązania:
https://bibliotekanauki.pl/articles/1399675.pdf
Data publikacji:
2013-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Kf
81.10.Jt
61.72.-y
Opis:
In this paper, the effects of $P_2O_5$ and heat treatment on the crystalline phases and microstructure of lithium disilicate-barium disilicate glass were examined. A wider and broad peak in the differential thermal analysis curve indicates a presence of surface crystallization instead of volume crystallization despite the use of nucleating agent, $P_2O_5$. The heat treatment schedules were planned according to differential thermal analysis data. The controlled crystallization of the compositions studied was carried out using two-stage heat treatment procedure. The glass transition temperature, $T_{g}$ of the as-cast sample were used to determine the optimum nucleation temperature. The optimum nucleation temperature was determined to be 520°C. The crystallization was carried out at 720C and 880C for 15 min. Lithium disilicate and sanbornite was the major phases and moganite or coesite were also present depending on the heat treatment duration. Due to coexistence of lithium disilicate and barium disilicate phases, the change in the melting entropy prevented the formation of spherulitic morphology and recrystallization after further heat treatments. The rise in the crystallization temperature enhanced grain coarsening and formed massive microstructures.
Źródło:
Acta Physica Polonica A; 2013, 123, 2; 191-192
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Symmetry Pattern and Domain Wall Structure in $GdFeO_{3}$ Perovskite Type
Autorzy:
Savytskii, D.
Tataryn, T.
Bismayer, U.
Powiązania:
https://bibliotekanauki.pl/articles/1550088.pdf
Data publikacji:
2010-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Mm
61.72.-y
61.50.Ah
Opis:
Symmetry relations between the domain states in $GdFeO_{3}$ type crystals have been obtained using group-theoretical analysis for prototype and ferroelastic space groups. Models for possible domain pairs are developed. The ion locations on the domain boundary were estimated as intermediate positions between the sites in crystal structure of neighboring domain states. It is shown that the crystalline structure of the boundary approaches to the prototype phase structure - the ideal $ABO_{3}$ perovskite-type structure, however certain deformations remain. In addition to the shifts of the all ions the tilts of oxygen octahedra of the some type and related displacements of A ions should take place during the switching of orientation states. The tilts of octahedra and displacements of A ions are sufficient to form translation states (antiphase domains). Antiphase domains can have boundaries between themselves basically along the three faces of the orthorhombic cell.
Źródło:
Acta Physica Polonica A; 2010, 117, 1; 78-85
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Superconductivity Study of GaN Highly Doped by Transition Metals
Autorzy:
Gosk, J.
Boćkowski, M.
Tokarczyk, M.
Kowalski, G.
Twardowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1399142.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.25.Ha
74.70.-b
74.25.Dw
75.50.-y
61.72.Dd
81.10.Dn
Opis:
GaN:Cr and GaN:Fe single crystals as well as GaN:Mn micropowders highly doped by transition metals were grown to investigate low temperature superconductivity. Magnetic measurements revealed type I superconductivity with $T_{C} ≈ 6 K$ and $H_{C} ≈ 600 Oe$, identical for all compounds and also identical to that observed before in GaP:Cr and GaAs:Cr. The presence of amorphous inclusions of gallium may explain existing superconductivity as a result of a phase transition leading to β-Ga during cooling down of the sample. Since the observed parameters are close to those characteristic for superconducting Ga(II) this possibility could not be ruled out.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 877-880
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of SrLaAlO$\text{}_{4}$ and SrLaGaO$\text{}_{4}$ Substrate Crystals by Raman Spectroscopy
Autorzy:
Drozdowski, M.
Kozielski, M.
Pajączkowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/1964243.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
78.30.-j
33.20.Fb
63.20.-e
Opis:
In this paper the study of SrLaAlO$\text{}_{4}$ and SrLaGaO$\text{}_{4}$ single crystals using the Raman scattering method is presented. The obtained results are discussed in terms of nature of the crystallografic imperfections and point defects which might arise during the crystal growth process.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 139-142
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of Oxide-Dispersion-Strengthened Ferritic Steels after Ion Implantation
Autorzy:
Simeg Veternikova, J.
Korhonen, E.
Skarba, M.
Degmova, J.
Sabelova, V.
Sojak, S.
Slugen, V.
Powiązania:
https://bibliotekanauki.pl/articles/1336688.pdf
Data publikacji:
2014-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
68.55.Ln
61.72.J-
Opis:
This paper is focused on four different commercial oxide-dispersion-strengthened ferritic steels (MA 956, ODM 751, MA 957 and ODS Eurofer) with different chromium content and the change of their microstructure after helium ion implantation. The samples were implanted with kinetic energy of ions up to 500 keV and the implantation depth was up to 1.2 μm. The implantation was performed at Institute of Nuclear and Physical Engineering, Slovak University of Technology in Bratislava. The samples were observed prior and after the implantation by positron Doppler broadening spectroscopy with slow positron beam (energy up to 36 keV) which is one of the most suitable techniques due to its sensitivity to surface and subsurface layers up to 1.6 μm. The results showed visible change of defect presence in all samples and defect depth profiles are in a good accordance with SRIM software calculations displaying the Bragg peak. According to measured data, ODS Eurofer (9% Cr) seems to be the most radiation resistant from the group of all investigated steels and MA 956 (20% Cr) as the most radiation affected steel.
Źródło:
Acta Physica Polonica A; 2014, 125, 3; 741-743
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Studies of Magnetoresistance in GaAs:Te Crystals with Structural Disorder at Doping Limit
Autorzy:
Tarkowski, T.
Słupiński, T.
Karpierz, K.
Powiązania:
https://bibliotekanauki.pl/articles/2048144.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
61.72.uj
72.20.My
Opis:
Transverse magnetoresistance was studied in monocrystalline GaAs:Te doped above the equilibrium doping limit and annealed to partially deactivate donor impurities. It is shown that in a sample with partial deactivation of Te impurities, which exhibits structural fluctuations in microscale, both strong positive and some negative magnetoresistances arise, which are difficult to understand within the relaxation time approximation in degenerated homogeneous semiconductor. It is discussed that a consideration of the role of spatial fluctuations (in carrier concentration, conductivity, etc.), e.g. as proposed by Herring, allows for an understanding of positive component of magnetoresistance observed in the sample with a distinct microscopic structural disorder. With the aim to better understand the transport in GaAs:Te, a model material doped above the doping limit, we discuss both positive and negative components of measured magnetoresistance.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 726-728
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structure Changes in Cz-Si Single Crystals Irradiated with Fast Oxygen and Neon Ions
Autorzy:
Datsenko, L.
Żymierska, D.
Auleytner, J.
Klinger, D.
Machulin, V.
Klad'ko, V.
Melnik, V.
Prokopenko, I.
Czosnyka, T.
Choiński, J.
Powiązania:
https://bibliotekanauki.pl/articles/2011007.pdf
Data publikacji:
1999-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
61.10.-i
61.72.-y
Opis:
The research of the surface and the near-surface region of Cz-Si wafers irradiated with fast oxygen and neon ions of energy 4 MeV/u and dose 10$\text{}^{14}$ particles/cm$\text{}^{2}$ is presented. In our study several methods based on the Bragg case of X-ray diffraction using Ag K_{α$\text{}_{1}}$, as well as reflection high-energy electron diffraction and Nomarsky optical microscopy were used. It was shown that implantation with fast neon ions causes larger disturbances of silicon crystal structure than irradiation with oxygen ions.
Źródło:
Acta Physica Polonica A; 1999, 96, 1; 137-142
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 80

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