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Tytuł:
Fine Diffraction Effects in Si Single Crystals Implanted with Fast Ar Ions and Annealed
Autorzy:
Żymierska, D.
Godwod, K.
Adamczewska, J.
Auleytner, J.
Choiński, J.
Regiński, K.
Powiązania:
https://bibliotekanauki.pl/articles/2030690.pdf
Data publikacji:
2002-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
61.80.-x
61.10.-i
85.40.Ry
Opis:
The paper presents high-resolution X-ray diffraction studies performed for Si single crystal: as-grown, implanted with a 5×10$\text{}^{14}$ ions· cm$\text{}^{-2}$ dose of 3 MeV/n Ar ions, as well as implanted and annealed in a very high vacuum. The results are discussed on the basis of rocking curves and the mathematical analysis of the reciprocal space maps. It is shown that the lattice parameter is increased in an implanted part of the crystal, but long distance lattice curvature is not present. After annealing full relaxation of the crystal is stated.
Źródło:
Acta Physica Polonica A; 2002, 101, 5; 743-750
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
How to Distinguish Perfect Quasi-Crystals from Twins and Other Structures Using Diffraction Experiments?
Autorzy:
Wolny, J.
Powiązania:
https://bibliotekanauki.pl/articles/1920856.pdf
Data publikacji:
1992-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
Opis:
Performing diffraction experiments for various lengths of coherent scattering and using the scaling of peak intensities on a number of atoms one can experimentally distinguish quasi-crystals from the other structures (e.g. twins or random). For perfect quasi-crystals peak intensities scale as N$\text{}^{2}$, for other structures this scaling depends on concentration of atoms, behaving critical for Penrose concentration.
Źródło:
Acta Physica Polonica A; 1992, 82, 1; 173-177
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interference Fringes in Synchrotron Section Topography of Implanted Silicon with a Very Large Ion Range
Autorzy:
Wieteska, K.
Wierzchowski, W.
Graeff, W.
Dłużewska, K.
Powiązania:
https://bibliotekanauki.pl/articles/1964180.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.80.-x
Opis:
Silicon crystals implanted with 9 MeV protons to the dose of 5×10$\text{}^{17}$ cm$\text{}^{-2}$ were studied with X-ray topographic methods using both conventional and synchrotron radiation sources. After the implantation the crystals were thermally and electron annealed. The implantation produced large 600 μm thick shot-through layer while the total thickness of the samples was 1.6 mm. It was confirmed by means of double crystal topography that the whole crystal was elastically bent. The transmission section patterns revealed both parts of the implanted crystal separated by strong contrasts coming from the most damaged layer and distinct interference fringes which appeared on one side of the topograph only. The location of the fringes changed when the beam entered the other side of the sample. The mechanism of fringe formation was studied with numerical integration of the Takagi-Taupin equations, especially studying the intensity distribution in the diffraction plane. The simulations reproduced the location of the fringes in different geometries and indicate that they can be caused both by variable crystal curvature and variable ion dose.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 1021-1024
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Lattice Deformation in Al$\text{}_{x}$Ga$\text{}_{1-x}$As Epitaxial Layers Caused by Implantation with High Doses of 1 Mev Si Ions
Autorzy:
Wieteska, K.
Wierzchowski, W.
Graeff, W.
Turos, A.
Grötzschel, R.
Powiązania:
https://bibliotekanauki.pl/articles/2011027.pdf
Data publikacji:
1999-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.80.-x
Opis:
A series of highly perfect Al$\text{}_{0.45}$Ga$\text{}_{0.55}$ As epitaxial layers implanted with 1 MeV Si ions to the doses in a range 7×10$\text{}^{13}$-2×10$\text{}^{15}$ ions/cm$\text{}^{2}$ were studied with various conventional and synchrotron X-ray diffraction methods. The presently used methods allowed both the measurement of lattice parameter changes and strain induced deformation. The evaluation of complete strain profiles was also performed by numerical simulation of diffraction curves. It was found that the implantation induced considerable change of lattice parameter reached the maximum at the dose 3×10$\text{}^{14}$ ions/cm$\text{}^{2}$. The recorded curves proved also that the lattice parameter is almost constant in the near surface region of the implanted layers. The applied doses did not cause lattice amorphisation at room temperature.
Źródło:
Acta Physica Polonica A; 1999, 96, 2; 289-293
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Lattice Deformation Studies in Silicon Implanted with High-Energy Protons
Autorzy:
Wieteska, K.
Dłużewska, K.
Wierzchowski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1945258.pdf
Data publikacji:
1996-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.80.-x
Opis:
The deformation of crystal lattice in silicon implanted with protons of energy 1.6-9 MeV was studied by means of X-ray topography and double-crystal rocking curve measurements. The samples were investigated as-implanted and after thermal and electron annealing. The surface relief of the implanted part of the crystal was also revealed with optical methods. As-implanted wafers exhibited spherical bending being convex at the implanted side. Thermal and electron annealing caused a dramatic increase in bending of the implanted part while the bending of the remaining part of the sample was reduced. A characteristic behaviour of a double-crystal topographic contrast in the annealed crystals was explained due to bending of the shot-through layer along the Gaussian profile.
Źródło:
Acta Physica Polonica A; 1996, 89, 3; 395-400
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Misfit Dislocation Sources in GaAs Epitaxial Layers
Autorzy:
Wierzchowski, W.
Mazur, K.
Strupiński, Wł.
Wieteska, K.
Graeff, W.
Powiązania:
https://bibliotekanauki.pl/articles/1945232.pdf
Data publikacji:
1996-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
Opis:
The formation of misfit dislocation was studied in GaAs homoepitaxial layers on the substrates containing considerable amount of isoelectronic indium. The layers were grown with metal-oxide chemical vapour deposition and chemical vapour deposition methods including low temperature process with tertiarbutylarsine arsenic source. The critical conditions of misfit dislocation formation were exceeded up to 5×. The samples were examined before and after epitaxial process with a number of different X-ray topographic and diffractometric methods, including high resolution synchrotron white beam topography. The crystallographic identification of the defects was supported by the numerical simulation of topographic images. It was found that a number of threading dislocations, continuing in the epitaxial layer from those existing in the substrate, did not take part in the formation of misfit dislocations despite a suitable slip system. On the other hand, the formation of misfit dislocations from small imperfections of epitaxial deposit was proved in many cases. A reasonable good quality of the layers was confirmed by the resolution of individual defects and only small broadening of rocking curves.
Źródło:
Acta Physica Polonica A; 1996, 89, 3; 341-346
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Observation of Interference Fringes in Bragg-Case Synchrotron Double-Crystal Images of Stacking Faults in Diamond
Autorzy:
Wierzchowski, W.
Moore, M.
Powiązania:
https://bibliotekanauki.pl/articles/1920862.pdf
Data publikacji:
1992-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.70.-r
Opis:
Bragg-case synchrotron double-crystal images of stacking faults were studied in a slab prepared from a synthetic diamond of a good quality. The images of stacking faults in topographs taken on the tails of the rocking curve exhibited well pronounced interference fringes. The fringes were strongly dependent on the angular setting and they were less spaced further from the maximum. The experimental images were compared with those theoretically predicted from an application of plane-wave dynamical theory. A reasonably good correspondence between theoretical and experimental images was obtained. The theoretical images of stacking faults were dependent on the type of stacking fault, producing some difference in the first fringe.
Źródło:
Acta Physica Polonica A; 1992, 82, 2; 185-191
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synchrotron White Beam Topographic Studies of Gallium Arsenide Crystals
Autorzy:
Wierzchowski, W.
Wieteska, K.
Graeff, W.
Powiązania:
https://bibliotekanauki.pl/articles/1964178.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
Opis:
A series of samples cut out from different types of gallium arsenide crystals with low dislocation density were studied by means of white beam synchrotron topography. The investigation was performed with transmission and back-reflection projection methods and transmission section method. Some of the topographs in transmission geometry provided a very high sensitivity suitable for revealing small precipitates. The transmission section images significantly differed depending on the wavelength and absorption. In some cases a distinct Pendellösung fringes and fine details of dislocation and precipitates images were observed. It was possible to reproduce the character of these images by means of numerical simulation based on integration of Takagi-Taupin equations. Due to more convenient choice of radiation, synchrotron back-reflection projection topography provided much better visibility of dislocations than analogous methods realized with conventional X-ray sources.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 1015-1019
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Images of Dislocations in Synchrotron Bragg-Case Section Topography of Diamond
Autorzy:
Wierzchowski, W.
Moore, M.
Powiązania:
https://bibliotekanauki.pl/articles/1920864.pdf
Data publikacji:
1992-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.70.-r
Opis:
Bragg-case synchrotron section topographs were studied in parallel slabs cut from a synthetic diamond of a good quality. The topographs revealed the Pendellösung fringes and images of dislocations and other defects containing several fringe systems. The experiment provided the opportunity for studying of the theoretical dislocation images obtained by numerical integration of the Takagi-Taupin equations. A program employing a variable step of integration in the Bragg-case has been presented. The influence of the finite slit width and of the limited beam divergence on the theoretical images is also discussed.
Źródło:
Acta Physica Polonica A; 1992, 82, 2; 193-200
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-Ray Topographic Investigation of Cellular Structure and its Relation to another Defects in Various Types of GaAs Single-Crystals
Autorzy:
Wierzchowski, W.
Mazur, K.
Powiązania:
https://bibliotekanauki.pl/articles/1929756.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
Opis:
The defect patterns in GaAs crystal grown using liquid encapsulated Czochralski and gradient freeze methods with various types of doping were characterized using complementary X-ray topographic methods. It was found that the cellular structure occurring in the low doped crystal is developed independently from the actual growth surface. The occurrence of the cellular structure is connected with significant lattice deformation, and some results point that significant stress can influence its formation. The high doping prevents formation of the cellular structure, but at higher doping the phenomenon of "cellular growth" can occur due to instabilities of the growth surface. The present results point that defect pattern in GaAs crystals is more affected by the type of doping than by the choice of the growth method.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 789-794
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-ray Standing Waves and Rutherford backscattering Studies of the Structure of Si Single Crystals Implanted with Fe Ions
Autorzy:
Vartanyantz, I. A.
Auleytner, J.
Nowicki, L.
Kwiatkowski, S.
Turos, A.
Powiązania:
https://bibliotekanauki.pl/articles/1945411.pdf
Data publikacji:
1996-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
Opis:
The X-ray standing wave and Rutherford backscattering spectroscopy in channelling geometry were applied for the investigation of the structure of silicon single crystals implanted with 80 keV Fe ions. Both methods were used for the determination of crystal damage and lattice location of implanted metal atoms before and after thermal annealing. Both methods gave consistent results regarding the amorphization of Si due to the Fe-ion implantation. Moreover, using both methods some Fe substitution fraction was determined. The depth profiles of implanted atoms were compared to the results of computer simulations. Complementary use of X-ray standing wave and Rutherford backscattering spectroscopy channelling techniques for studies of radiation damage and lattice location of implanted atoms is discussed.
Źródło:
Acta Physica Polonica A; 1996, 89, 5-6; 625-633
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-ray Standing Wave Studies of Si (111) Crystal Implanted by Fe and Ni Ions
Autorzy:
Vartanjantz, I.A.
Kovalchuk, M.V.
Sosphenov, A.N.
Auleytner, J.
Majewski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1891973.pdf
Data publikacji:
1991-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.70.Sk
Opis:
The X-Ray Standing Wave Method (XRSW) was applied for the investigation of the silicon samples implanted with 80 keV Fe and Ni ions. The samples were measured by the XRSW method before and after annealing process. For theoretical calculations the two layer model was used. The analysis revealed that after annealing only a slight amount (~20÷30%) of the implanted atoms occupy the position of the Si crystal planes. The Rutherford backscattering (RBS) experiment that confirms the results obtained by the XRSW method was performed.
Źródło:
Acta Physica Polonica A; 1991, 80, 6; 811-817
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural Chemistry and Magnetic Properties of $R_2Ni_{2-x}In$ (R=Gd-Er, x=0.22 or 0.3) Compounds
Autorzy:
Tyvanchuk, Yu.
Baran, S.
Jaworska-Gołąb, T.
Duraj, R.
Kalychak, Ya.
Szytuła, A.
Powiązania:
https://bibliotekanauki.pl/articles/1489895.pdf
Data publikacji:
2012-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.30.Cr
75.30.Kz
61.10.-i
61.66.Dk
75.40.Gb
75.50.Ee
Opis:
X-ray diffraction and magnetic measurements of $R_2Ni_{2 - x}In$ (R = Ho, Dy, x = 0.3 and R = Gd, Tb, Er, x = 0.22) compounds are reported. The compounds crystallize in the tetragonal $Mo_2FeB_2$-type crystal structure (space group P4/mbm). Magnetic measurements reveal antiferromagnetic order with the Néel temperatures $T_{N}$ equal to 26.4 K (Gd), 20.2 K (Tb), 8.3 K (Dy), 7.1 K (Ho), and 6.3 K (Er). For R = Gd, Tb and Er an additional phase transition below $T_{N}$ is observed at 13.5, 13.1, and 5.0 K, respectively.
Źródło:
Acta Physica Polonica A; 2012, 121, 3; 678-681
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Radial Distribution Function Analysis of Carbon Nanotubes
Autorzy:
Szczygielska, A.
Jabłońska, A.
Burian, A.
Dore, J. C.
Honkimaki, V.
Nagy, J. B.
Powiązania:
https://bibliotekanauki.pl/articles/2014446.pdf
Data publikacji:
2000-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
81.05.Tp
Opis:
Wide-angle X-ray scattering studies of carbon nanotubes produced by catalytic decomposition of acetylene on a supported Co catalyst are reported. The X-ray intensities were recorded up to maximum scattering vector K$\text{}_{max}$=24Å and then Fourier transformed to real space. Yielding the radial distribution functions of good spatial resolution were analysed by the model based on fitting procedures method. Detailed analysis of the experimental data by a least-squares fitting procedure shows that the local atomic structure exhibits the expected hexagonal network with the nearest-neighbour C-C distance of 1.41Å. Investigation of stacking nature of subsequent layers suggests the structure in which adjacent layers are arranged without spatial correlations with inter-tubule spacing of about 3.4Å.
Źródło:
Acta Physica Polonica A; 2000, 98, 5; 611-617
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
First X-Ray Evidence of Heterogeneous Impurity Correlations in Very Highly Doped n-GaAs
Autorzy:
Słupiński, T.
Zielińska-Rohozińska, E.
Powiązania:
https://bibliotekanauki.pl/articles/1968417.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
71.55.-i
61.10.-i
Opis:
Measurements of X-ray scattering from very highly doped GaAs:Te single crystals as a function of doping level and thermal treatment (annealing temperature) are reported. Reversible diffuse X-ray scattering occurs after sample annealing below a certain temperature. Presented results indicate an inhomogeneous arising of impurity-impurity correlations in GaAs:Te solid solution. Observed features of diffuse X-ray scattering in reciprocal space can be well understood within Krivoglaz theory of scattering due to spatial fluctuations of solute atoms pair correlation function and related lattice deformations. Good coincidence of diffuse X-ray scattering with the free electron concentration changes caused by an annealing is reported. Free electron concentration drop accompanying impurity correlation strongly suggests a certain form of impurity bonding.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 971-975
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 60

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