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Wyświetlanie 1-15 z 70
Tytuł:
U$\text{}_{P}$, 3U$\text{}_{P}$, 11U$\text{}_{P}$: Above-Threshold Ionization Revisited
Autorzy:
Yang, Baorui
Schafer, K. J.
Walker, B.
Kulander, K. C.
Dimauro, L. F.
Agostini, P.
Powiązania:
https://bibliotekanauki.pl/articles/1931385.pdf
Data publikacji:
1994-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
32.80.Fb
31.90.+s
32.80.Rm
Opis:
Angular distributions of very high energy photoelectrons from Xe and Kr, excited by a 50 ps, 1054 um laser, are presented. In Xe strong, narrow structures 45° off the polarization axis appear on above-threshold ionization peaks within a limited energy range centered around 9U$\text{}_{P}$, where U$\text{}_{P}$ is the intensity-dependent ponderomotive energy. Under the same conditions the effect is much weaker in krypton. These structures are discussed using a very simple classical model as well as sophisticated single active electron calculations and the Keldysh-Faisal-Reiss theory. We conclude these structures are the result of single-electron dynamics involving rescattering of a tunneling component of the continuum wave function.
Źródło:
Acta Physica Polonica A; 1994, 86, 1; 41-50
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Luminescence of Highly Excited Nonpolar a-Plane GaN and AlGaN/GaN Multiple Quantum Wells
Autorzy:
Juršėnas, S.
Kuokštis, E.
Miasojedovas, S.
Kurilčik, G.
Žukauskas, A.
Chen, C. Q.
Yang, J. W.
Adivarahan, V.
Asif Khan, M.
Powiązania:
https://bibliotekanauki.pl/articles/2038100.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
73.21.Fg
72.20.Jv
78.47.+p
Opis:
Carrier recombination dynamics in polar and nonpolar GaN epilayers and GaN/AlGaN multiple quantum wells grown over sapphire substrates with various crystallographic orientation were studied under high photoexcitation by 20 ps laser pulses. The transient of luminescence featured a significant enhancement in nonradiative recombination of free carriers for nonpolar a-plane GaN epilayers compared to conventional c-plane samples. The epitaxial lateral overgrowth technique was demonstrated to significantly improve the quality of nonpolar a-plane films. This was proved by more than 40-fold increase in luminescence decay time (430 ps compared to ≤10 ps in the ordinary a-plane epilayer). Under high-excitation regime, a complete screening of built-in electric field by free carriers in multiple quantum wells grown on c-plane and r-plane sapphire substrates was achieved. Under such high excitation, luminescence efficiency and carrier lifetime of multiple quantum wells was shown to be determined by the substrate quality.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 567-573
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Luminescence of Highly Photoexcited GaN Epilayers and Heterostructures Grown on Different Sapphire Crystal Planes
Autorzy:
Juršėnas, S.
Miasojedovas, S.
Kurilčik, G.
Liuolia, V.
Žukauskas, A.
Chen, C. Q.
Yang, J. W.
Kuokštis, E.
Adivarahan, V.
Asif Khan, M.
Powiązania:
https://bibliotekanauki.pl/articles/2041736.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
73.21.Fg
72.20.Jv
78.47.+p
Opis:
GaN epilayers and AlGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on different crystal planes (c, a, and r) of the sapphire substrate were studied by excitation intensity dependent and time-resolved photoluminescence. In polar multiple quantum wells grown on a- and c-planes, a blueshift of the luminescence band with increasing the excitation energy was observed, indicating that screening of built-in field by free carriers takes place, whereas in nonpolar r-plane grown multiple quantum wells, the luminescence band maintained an almost constant peak position. Full screening of built-in field was achieved at the excitation densities higher than 0.3 mJ/cm$\text{}^{2}$. Under conditions of screened built-in electric field the structures were characterized by carrier lifetime. It was shown that nonpolar multiple quantum wells suffer from high density of nonradiative traps that can be due to substrate related threading dislocations.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 235-239
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Stimulated Emission in InGaN/GaN Multiple Quantum Wells with Different Indium Content
Autorzy:
Miasojedovas, S.
Juršėnas, S.
Kurilčik, G.
Žukauskas, A.
Springis, M.
Tale, I.
Yang, C. C.
Powiązania:
https://bibliotekanauki.pl/articles/2041743.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.45.+h
78.47.+p
78.67.De
Opis:
We report on high-excitation luminescence spectroscopy of In$\text{}_{x}$Ga$\text{}_{1-x}$N/GaN multiple quantum wells with a high indium content (x=0.22÷0.30). High excitation conditions enabled us to achieve screening of built-in field by free carriers. This allowed for the evaluation of the influence of the band potential fluctuations due to variation in In-content on optical properties. Enhanced spontaneous emission was found for x≫0.22 due to carrier localization within the chaotic band potential. Meanwhile the stimulated emission was found to be the highest for structures with x≈ 0.25-0.27. We attribute the In-content dependence of the stimulated emission intensity to a trade-off between an increased carrier density and a decrease in the density of states.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 256-260
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical characterization of ISFETs
Autorzy:
Tomaszewski, D.
Yang, C. M.
Jaroszewicz, B.
Zaborowski, M.
Grabiec, P.
Pijanowska, D.
Powiązania:
https://bibliotekanauki.pl/articles/308663.pdf
Data publikacji:
2007
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
ISFET
CMOS
electrical measurements
I-V characteristics
characterization
parameters extraction
Opis:
Methodology of electrical characterization of ISFETs has been described. It is based on a three-stage approach. First, electrical measurements of ISFET-like MOSFETs and extraction of basic parameters of the MOSFET compact model are performed. Next, mapping of the ISFET channel conductances and a number of other characteristic parameters is carried out using a semi-automatic testing setup. Finally, ISFET sensitivity to solution pH is evaluated. The methodology is applied to characterize ISFETs fabricated in the Institute of Electron Technology (IET).
Źródło:
Journal of Telecommunications and Information Technology; 2007, 3; 55-60
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Planned Route Based Negotiation for Collision Avoidance Between Vessels
Autorzy:
Hu, Q.
Yang, C.
Cheng, H.
Xiao, B.
Powiązania:
https://bibliotekanauki.pl/articles/116234.pdf
Data publikacji:
2008
Wydawca:
Uniwersytet Morski w Gdyni. Wydział Nawigacyjny
Tematy:
anticollision
Collision Situation
COLREGs
Collision Avoidance System
Collision Avoidance Decision Making
route planning
Computer Simulation
Negotiation
Opis:
Automatic vessel collision-avoidance systems have been studied in the fields of artificial intelligence and navigation for decades. And to facilitate automatic collision-avoidance decision-making in two-vessel-encounter situation, several expert and fuzzy expert systems have been developed. However, none of them can negotiate with each other as seafarers usually do when they intend to make a harmonious and more economic overall plan of collision avoidance in the COLREGS-COST-HIGH situations where collision avoidance following the International Regulations for Preventing Collisions at Sea(COLREGS) costs too much. A negotiation framework was put forward in our previous research to enable vessels to negotiate for optimizing collision avoidance in the COLREGS-COST-HIGH situations at open sea. In this paper, the negotiation framework is improved by considering the planned route of both vessels. The simulation results show that more economic overall plan of collision avoidance may be achieved by the improved framework when one or both parties deviate from their planed route or are approaching their next way points.
Źródło:
TransNav : International Journal on Marine Navigation and Safety of Sea Transportation; 2008, 2, 4; 363-368
2083-6473
2083-6481
Pojawia się w:
TransNav : International Journal on Marine Navigation and Safety of Sea Transportation
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Robust H∞ control for a class of uncertain neutral systems with both state and control input time-varying delays via a unified LMI optimization approach
Autorzy:
Chen, J. D.
Yang, C. D.
Lin, K. J.
Lien, C. H.
Powiązania:
https://bibliotekanauki.pl/articles/970609.pdf
Data publikacji:
2008
Wydawca:
Polska Akademia Nauk. Instytut Badań Systemowych PAN
Tematy:
robust H[infinity] control
neutral systems
unified LMI approach
convex optimization approach
delay-dependent criterion
Opis:
The robust H∞ control problem is considered for a class of uncertain neutral system involving both state and control input time-varying delays. The uncertainties under consideration are nonlinear time-varying parameter perturbations. The methodology is based on the Lyapunov functional combined with a unified LMI approach, and a new delay-dependent criterion is proposed to guarantee the stabilization and disturbance attenuation of systems. Moreover, a convex optimization approach is used to solve the robust H∞ control disturbance attenuation problem. Finally, a numerical example is illustrated to show the validity of this paper. The simulation results reveal significant improvement over the recent results.
Źródło:
Control and Cybernetics; 2008, 37, 3; 517-530
0324-8569
Pojawia się w:
Control and Cybernetics
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Pulsed Power and Power Conditioning Capacitors
Autorzy:
Macdougall, F.
Jow, T.
Ennis, J.
Yang, X.
Yen, S.
Cooper, R.
Gilbert, J.
Schneider, M.
Naruo, C.
Bates, J.
Powiązania:
https://bibliotekanauki.pl/articles/1807873.pdf
Data publikacji:
2009-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
84.32.Tt
84.60.Ve
Opis:
A capacitor development effort focused on capacitors used in pulsed power and power conversion applications underwent at General Atomics Electronic Systems Inc. (GA-ESI) for decades. In recent years, funding for these efforts has accelerated the rate of development progress to the point where the time it takes to decrease the size of a capacitor by half has dropped from 10 years to 4 years. This progress made in pulsed power and power conversion capacitors will be described along with the performance characteristics of today's capacitors.
Źródło:
Acta Physica Polonica A; 2009, 115, 6; 989-991
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A CTS pump with a crossed-coupled output for higher conversion efficiency
Autorzy:
Hsieh, Z. H.
Huang, N. X.
Shiau, M. S.
Wu, H. C.
Yang, S.-Y.
Liu, D.-G.
Powiązania:
https://bibliotekanauki.pl/articles/397847.pdf
Data publikacji:
2010
Wydawca:
Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:
DC-DC przetwornice
CTS ładunek pompy
sprzężenie skrośne ładunku pompy
DC-DC converter
CTS charge pump
cross coupled charge pump
Opis:
In this paper, a novel switching-capacitor DC-DC voltage converter with higher efficiency will be presented. This circuit was designed by modifying the output stage of the conventional static charge-transfer-switch (CTS) charge pump in a cross-coupled configuration. In this design, a control scheme to overcome both the reverse charge sharing and the threshold drops in the CTS pump was also employed. In this study, the capacitances for all the pumping capacitors were selected the same as 0.1 μF. With this design, our circuit can operate with a clock rate up to 1 MHz. The performance of this circuit was first evaluated by simulation by HSPICE with the 0.35-μm technology of TSMC. The results showed that this circuit can pump the low input of 1.5V nearly 5 times at the output. The conversion gain can be around 95%. The performance of the real chip manufactured by TSMC was measured and will be compared with the simulation results.
Źródło:
International Journal of Microelectronics and Computer Science; 2010, 1, 1; 9-14
2080-8755
2353-9607
Pojawia się w:
International Journal of Microelectronics and Computer Science
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Defect Structure of Nitrogen Doped Czochralski Silicon Annealed under Enhanced Pressure
Autorzy:
Misiuk, A.
Wierzchowski, W.
Wieteska, K.
Londos, C.
Andrianakis, A.
Bak-Misiuk, J.
Yang, D.
Surma, B.
Powiązania:
https://bibliotekanauki.pl/articles/1539028.pdf
Data publikacji:
2010-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
61.72.-y
61.72.Ff
61.72.uf
62.50.-p
Opis:
Defect structure of Czochralski grown silicon (Cz-Si) with nitrogen admixture, c_{N} ≤ 5 × $10^{14} cm^{-3}$ (Cz-Si:N), annealed for up to 10 h at 1270-1400 K under hydrostatic Ar pressure ≤ 1.1 GPa, was investigated by synchrotron diffraction topography (HASYLAB, Germany), X-ray reciprocal space mapping, and infrared spectroscopy. Extended defects were not detected in Cz-Si:N processed at up to 1270 K. Such defects were created, however, in Cz-Si:N pre-annealed at 923 K and next processed at 1270 K or in as-grown Cz-Si:N processed at 1400 K. Investigation of temperature-pressure effects in nitrogen-doped silicon contributes to the understanding of defect formation in Cz-Si:N.
Źródło:
Acta Physica Polonica A; 2010, 117, 2; 344-347
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Quest for Band Renormalization and Self-Energy in Correlated f-Electron Systems
Autorzy:
Durakiewicz, T.
Riseborough, P.
Batista, C.
Yang, Y.
Oppeneer, P.
Joyce, J.
Bauer, E.
Graham, K.
Powiązania:
https://bibliotekanauki.pl/articles/1538778.pdf
Data publikacji:
2010-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.60.-i
71.28.+d
74.25.Jb
Opis:
Coexisting low-energy scales are observed in f-electron materials. The information about some of low-energy scales is imprinted in the electron self-energy, which can be measured by angle-resolved photoemission (ARPES). Such measurements in d-electron materials over the last decade were based on high energy- and momentum- resolution ARPES techniques used to extract the self-energy information from measured spectra. Simultaneously, many-body theoretical approaches have been developed to find a link between the self-energy and many-body interactions. Here we show the transcription of such methods from d-electrons to f-electrons by presenting the first example of low energy scales in the f-electron material $USb_2$, measured with synchrotron-based ARPES. The proposed approach will help in answering the fundamental questions about the complex nature of the heavy fermion state.
Źródło:
Acta Physica Polonica A; 2010, 117, 2; 264-267
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of Optical and Photoelectrical Properties of ZnO Crystals
Autorzy:
Onufrijevs, P.
Serevičius, T.
Scajev, P.
Manolis, G.
Medvids, A.
Chernyak, L.
Kuokstis, E.
Yang, C.
Jarasiunas, K.
Powiązania:
https://bibliotekanauki.pl/articles/1506285.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.15.+e
78.45.+h
78.30.Fs
Opis:
We characterized optical and photoelectrical properties of undoped and Ga-doped ZnO layers differently grown on sapphire substrates by using complementary optical methods. Different stimulated emission threshold values for ZnO epitaxial layers grown by pulsed laser deposition and MBE methods were attributed to crystalline quality of the layers and the growth method used. Different carrier lifetimes in various ZnO epitaxial layers are explained by defect-related and intrinsic mechanisms of recombination.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 274-276
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoluminescence Studies of Aluminum Nitride Nanowires
Autorzy:
Yang, J.
Na, H.
Kim, H.
Kebede, M.
Choi, R.
Jeong, J.
Lee, C.
Powiązania:
https://bibliotekanauki.pl/articles/1505466.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.-b
78.55.-m
Opis:
We report the production of AlN nanowires by the thermal heating method, for exploring their photoluminescence properties. The room-temperature photoluminescence properties were investigated with different annealing environment. While broad emissions with peaks at around 2.45 and 2.95 eV were obtained from both unannealed and annealed samples, the additional 2.1 eV peak was found from the annealed samples. We have suggested the possible emission mechanisms based on the assumption that both 2.45 eV peak and 2.1 eV peak are ascribed to the nitrogen vacancies. Annealing in N_2 environment exhibited lower intensities of 2.45 eV peak and 2.1 eV peak in comparison to those in Ar environment, presumably due to the suppression of nitrogen vacancies.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 125-127
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synthesis, Structure, Photoluminescence, and Raman Spectrum of Indium Oxide Nanowires
Autorzy:
Kim, H.
Na, H.
Yang, J.
Lee,, C.
Powiązania:
https://bibliotekanauki.pl/articles/1505485.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.-b
78.55.-m
Opis:
Production of indium oxide $(In_2O_3)$ whiskers at a very low temperature of 650°C was reported. The synthetic route was comprised of a thermal heating process of a mixture of In and Mg powders. We have investigated the structural properties of the as-synthesized nanowires by using X-ray diffraction and scanning electron microscopy. The product consisted of one-dimensional nanowires, with a crystalline cubic structure of $In_2O_3$. The photoluminescence measurement with the Gaussian fitting exhibited visible light emission bands centered at 2.1 eV and 2.8 eV. The peaks of the Raman spectrum were indexed to the modes being associated with cubic $In_2O_3$.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 143-145
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Evaluation of the Manufacturing and Functions of Complex Yarn and Fabrics
Wpływ geometrycznych parametrów strukturalnych przędz fantazyjnych na ich właściwości wytrzymałościowe
Autorzy:
Lin, C. M.
Lin, C. W.
Yang, Y. C.
Lou, C. W.
Chen, A. P.
Lin, J. H.
Powiązania:
https://bibliotekanauki.pl/articles/232604.pdf
Data publikacji:
2012
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Biopolimerów i Włókien Chemicznych
Tematy:
siła
ocena
funkcjonalny
elastyczny
właściwości wytrzmałościowe
konstrukcja
rozwój
strength
strain
evaluation
elastic
functional
characterization
design
development
Opis:
In this research, bamboo charcoal/spandex (BC/S) complex yarn was fabricated using spandex as the core yarn, which was then wrapped with bamboo charcoal nylon textured yarn. The core yarn was first expanded and then wrapped with the wrapping yarn on a rotor twister machine at speeds of 4000, 6000, 8000, 10000, and 12000 r.p.m. The wrapping amount of the BC/S complex yarns were 2, 3, and 4 turns/cm. In order to evaluate the physical properties of the BC/S complex yarn, the maximum breaking strength, elongation, and elastic recovery rate were tested. We fabricated BC/S fabrics using circular knitting based on optimal manufacturing parameters. The BC/S complex yarn had an optimum elastic recovery rate of 98.89% when the rotor speed was 10000 r.p.m and the wrap number 4 turns/cm. The optimum tenacity of the yarn containing 44.0 dtex spandex was 4.22 cN/dtex when the rotor speed was 4000 r.p.m. and the wrap number 2 turns/cm. The anion density of the BC/S fabric increased with the wrap number; in particular, the fabric containing 76.9 dtex spandex displayed an optimum anion density of 54 anions/cc.
Badano przędze składające się ze zwęglonych włókien bambusowych oraz wysokoelastycznych włókien typu spandex, których użyto jako włókien rdzeniowych. W pierwszej fazie włókna typu spandex ulegały rozciąganiu, a następnie były owijane włóknami bambusowymi przy wykorzystaniu wirnikowej maszyny skręcającej. Dla określenia właściwości fizycznych wyprodukowanych włókien hybrydowych określono wytrzymałość na zerwanie, wydłużenie i stopień odprężności. Wyprodukowano dzianiny na cylindrycznej maszynie dziewiarskiej przy optymalnych parametrach pracy dla uzyskania określonych właściwości dzianiny. Maksymalna wytrzymałość wyprodukowanych włókien hybrydowych wynosiła około 4 cN/dtex. Gęstość anionowa dzianiny wzrastała ze wzrostem ilości oplotów przędzy.
Źródło:
Fibres & Textiles in Eastern Europe; 2012, 4 (93); 47-50
1230-3666
2300-7354
Pojawia się w:
Fibres & Textiles in Eastern Europe
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 70

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