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Wyszukujesz frazę "Wosiński, S." wg kryterium: Autor

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    Wyświetlanie 1-9 z 9
    Tytuł:
    Effect of low-frequency electric field screening on motility of human sperm
    Autorzy:
    Górski, R.
    Kotwicka, M.
    Skibińska, I.
    Jendraszak, M.
    Wosiński, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2085910.pdf
    Data publikacji:
    2020
    Wydawca:
    Instytut Medycyny Wsi
    Tematy:
    human spermatozoa
    male infertility
    50 Hz EMF – 50 Hz electromagnetic field
    dielectric screen
    ADR Technology®
    Opis:
    Introduction. The human body is constantly exposed to an extremely low electromagnetic field (ELF-EMF), in particular at 50 Hz, emitted by power lines, domestic distribution lines, electrical appliances, etc. It is assumed that the increase in electromagnetic exposure may cause adverse effects upon human health, as well as raising concerns regarding the impact on human fertility. Objective. The aim of this in vitro study was to investigate the influence of ELF-EMF with a frequency of 50 Hz on the motility of human sperm. At the same time, the effectiveness of the dielectric screen constructed by ADR Technology® in absorbing the emitted radiation was examined. Materials and method. Semen samples of 20 patients were exposed to the influence of an extremely low electromagnetic field. After 5, 15 and 30 min., spermatozoa motility was analysed using a computer-assisted spermatozoa motility analysis system. The following sperm motility parameters were examined: 1) velocity straight linear motility; 2) cross-beat frequency; 3) lateral head displacement; 4) homogeneity of progressive motility velocity. Results. It was found that the ELF-EMF presented a negative effect on the motility of human spermatozoa. A significant decrease in spermatozoa motility speed and a significant increase in lateral head deviation values were observed under the influence of the electromagnetic field. ELF-EMF did not show an effect on either lateral head displacement or homogeneity of progressive motility velocity. Conclusions. A positive effect of the dielectric screen ADR Technology® was found. This effect compensated spermatozoa motility changes induced with ELF-EMF.
    Źródło:
    Annals of Agricultural and Environmental Medicine; 2020, 27, 3; 427-434
    1232-1966
    Pojawia się w:
    Annals of Agricultural and Environmental Medicine
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Morphological and cytophysiological changes in selected lines of normal and cancer human cells under the influence of a radio-frequency electromagnetic field
    Autorzy:
    Grski, R.
    Nowak-Terpiłowska, A.
    Śledziński, P.
    Baranowski, M.
    Wosiński, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/28762836.pdf
    Data publikacji:
    2021
    Wydawca:
    Instytut Medycyny Wsi
    Źródło:
    Annals of Agricultural and Environmental Medicine; 2021, 28, 1; 163-171
    1232-1966
    Pojawia się w:
    Annals of Agricultural and Environmental Medicine
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Resonant Tunnelling in Double-Barrier Heterostructures with an Accumulation Layer
    Autorzy:
    Wosiński, T.
    Figielski, T.
    Mąkosa, A.
    Wrotek, S.
    Dobrowolski, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1992612.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Gk
    73.50.Jt
    85.30.Mn
    Opis:
    Two modes of electron gas injection in resonant tunnelling through GaAs/AlGaAs double-barrier heterostructures were revealed while studying their current-voltage characteristics. Examining peculiarities of the characteristics within the temperature range 4-350 K and under a high magnetic field, we were able to distinguish the contribution to resonant tunnelling of ballistic electrons injected from a three-dimensional electron gas in the emitter contact and that of electrons injected from a two-dimensional electron gas in the accumulation layer formed near the emitter barrier.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 617-621
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    High-Resolution X-Ray Diffraction Studies on MBE-Grown p-ZnTe/n-CdTe Heterojunctions for Solar Cell Applications
    Autorzy:
    Wichrowska, K.
    Domagala, J.
    Wosinski, T.
    Chusnutdinow, S.
    Karczewski, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1375736.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cp
    81.05.Dz
    81.15.Hi
    88.40.jm
    Opis:
    High-resolution X-ray diffractometer was used to study structural quality, lattice parameters and misfit strain in p-ZnTe/n-CdTe heterojunctions grown by the molecular-beam epitaxy technique on two different (001)-oriented substrates of GaAs and CdTe. The X-ray diffractometer results indicate that the CdTe layers, grown on lattice mismatched GaAs substrate, are partially relaxed, by the formation of misfit dislocations at the interface, and display residual vertical strain of the order of $10^{-4}$. The presence of threading dislocations in the layers effectively limits the efficiency of solar energy conversion in the investigated heterojunctions. Homoepitaxially grown CdTe layers, of much better structural quality, display unexpected compressive strain in the layers and the relaxed lattice parameter larger than that of the substrate. Possible reasons for the formation of that unusual strain are discussed.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1083-1086
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Planar Hall Effect in Ferromagnetic (Ga,Mn)As/GaAs Superlattices
    Autorzy:
    Wesela, W.
    Wosiński, T.
    Mąkosa, A.
    Figielski, T.
    Sadowski, J.
    Terki, F.
    Charar, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047701.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.Jt
    75.50.Pp
    75.30.Gw
    85.75.-d
    Opis:
    The planar Hall effect was used for investigation of magnetic anisotropy in short period (Ga,Mn)As/GaAs superlattices epitaxially grown on (001) oriented GaAs substrate. The results confirmed the existence of low-temperature magnetocrystalline anisotropy in the superlattices with the easy magnetic axes directed along the two in-plane 〈100〉 directions. Attention is paid to the two-state behaviour of the planar Hall resistance at zero magnetic field that provides its usefulness for applications in non-volatile memory devices.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 369-373
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetically Controlled Interference of Ballistic Electrons Tunnelled throughout the Double-Barrier Resonator
    Autorzy:
    Figielski, T.
    Wosiński, T.
    Mąkosa, A.
    Dobrowolski, W.
    Vitusevich, S. A.
    Belyaev, A. E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1950748.pdf
    Data publikacji:
    1996-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Gk
    85.30.Mn
    Opis:
    An effect of magnetic field normal to the tunnel current on the amplitude and phase of the fine oscillatory structure, discovered in the resonance current-voltage curve in double-barrier AlAs/GaAs heterostructures, has been examined. All the obtained results are consistently explained in terms of the interference of ballistic electrons, escaped from the quantum well, in the collector part of the structure.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 4; 781-784
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fine Structure of Resonant-Tunneling Peak in GaAs/AlAs Double-Barrier Heterostructure
    Autorzy:
    Vitusevich, S. A.
    Figielski, T.
    Mąkosa, A.
    Wosiński, T.
    Belyaev, A. E.
    Konakova, R. V.
    Kravchenko, L. N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1872937.pdf
    Data publikacji:
    1995-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Gk
    85.30.Mn
    Opis:
    For the first time we observed a fine oscillatory structure, with the period of 36 mV, of the resonant tunneling peak in the current-voltage characteristic of a double-barrier heterostructure. We attribute it to a sequential single-phonon emission of ballistic electrons which tunneled out from the quantum well through the collector barrier.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 2; 377-380
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication and Electrical Characterization of PbS-EuS Ferromagnetic Semiconductor Microstructures
    Autorzy:
    Wrotek, S.
    Morawski, A.
    Tkaczyk, Z.
    Mąkosa, A.
    Wosiński, T.
    Dybko, K.
    Łusakowska, E.
    Story, T.
    Sipatov, A. Yu.
    Pécz, B.
    Grasza, K.
    Szczerbakow, A.
    Wróbel, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/2038135.pdf
    Data publikacji:
    2004-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Le
    75.30.Et
    75.70.Cn
    Opis:
    Current-voltage characteristics and temperature dependence of differential conductance were studied in lithographically patterned (lateral dimensions from 10 x 10 μm$\text{}^{2}$ to 100 x 100 μm$\text{}^{2}$) ferromagnetic EuS-PbS-EuS microstructures. Below the ferromagnetic transition temperature a 4% decrease in the structure conductance was observed for mutual antiferromagnetic orientation of magnetization vectors of ferromagnetic EuS layers.
    Źródło:
    Acta Physica Polonica A; 2004, 105, 6; 615-620
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Vertical Electron Transport through PbS-EuS Structures
    Autorzy:
    Wrotek, S.
    Dybko, K.
    Morawski, A.
    Mąkosa, A.
    Wosiński, T.
    Figielski, T.
    Tkaczyk, Z.
    Łusakowska, E.
    Story, T.
    Sipatov, A. Yu.
    Szczerbakow, A.
    Grasza, K.
    Wróbel, J.
    Palosz, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/2036032.pdf
    Data publikacji:
    2003-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.20.Ck
    75.30.Et
    Opis:
    Temperature dependence of current-voltage I-V characteristics and resistivity is studied in ferromagnetic PbS-EuS semiconductor tunnel structures grown on n-PbS (100) substrates. For the structures with a single (2-4 nm thick) ferromagnetic EuS electron barrier we observe strongly non-linear I-V characteristics with an effective tunneling barrier height of 0.3-0.7 eV. The experimentally observed non-monotonic temperature dependence of the (normal to the plane of the structure) electrical resistance of these structures is discussed in terms of the electron tunneling mechanism taking into account the temperature dependent shift of the band offsets at the EuS-PbS heterointerface as well as the exchange splitting of the electronic states at the bottom of the conduction band of EuS.
    Źródło:
    Acta Physica Polonica A; 2003, 103, 6; 629-635
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

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