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    Wyświetlanie 1-5 z 5
    Tytuł:
    Superconductivity in U-T Alloys (T = Mo, Pt, Nb, Zr) Stabilized in the Cubic γ-U Structure
    Autorzy:
    Sowa, S.
    Kim-Ngan, N.
    Krupska, M.
    Paukov, M.
    Tkach, I.
    Havela, L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398594.pdf
    Data publikacji:
    2016-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Bx
    74.70.Ad
    72.15.Cz
    Opis:
    Using ultrafast cooling (with the cooling rate up to 10⁶ K/s) helps to minimize the T-alloying concentration (T = Mo, Pt, Pd, Nb, Zr) necessary to retain the γ-U phase down to low temperatures. All investigated splat-cooled U-T alloys become superconducting with $T_{c}$ in the range of 0.61-2.11 K. The bulk character of superconductivity can be concluded for some of the splats when comparing the specific-heat anomaly at $T_{c}$ with the BCS theory prediction.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 2; 521-526
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Amorphous 5f Ferromagnetic Hydrides $UH_{3}Mo_{x}$
    Autorzy:
    Tkach, I.
    Kim-Ngan, N.
    Maškova, S.
    Andreev, A.
    Matěj, Z.
    Havela, L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1369135.pdf
    Data publikacji:
    2014-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Kj
    75.50.Vv
    72.15.Cz
    Opis:
    γ-U metal, stabilized down to room temperature in the bcc structure by Mo doping, can absorb hydrogen at high $H_{2}$ pressures only. The product is amorphous hydride $UH_{3}Mo_{x}$ analogous to $β-UH_{3}$. Such hydrides are ferromagnetic with high Curie temperatures (up to 200 K), enhanced with respect to $β-UH_{3}$. Magnetic moment of U also increases. Large disorder together with high anisotropy lead to a very high coercivity, reaching 4 T at low temperatures. As amorphization normally tends to suppress magnetic ordering of U compounds, such hydrides represent a new class of materials, amorphous U-based ferromagnets with relatively high Curie temperature.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 1; 292-293
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    ZnO films: propeties determined by electronic microscopy and ellipsometry
    Autorzy:
    Rakov, M.
    Poperenko, L.
    Tkach, V.
    Yurgelevich, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/385183.pdf
    Data publikacji:
    2009
    Wydawca:
    Sieć Badawcza Łukasiewicz - Przemysłowy Instytut Automatyki i Pomiarów
    Tematy:
    reactive magnetron sputtering
    Beattie’s method
    semi-infinite medium
    AFM
    SEM
    nanostructures
    Opis:
    Zinc oxide is a good material for application in nanoand optoelectronics due to its notable features, for example, large band gap. In this work ZnO films deposited by reactive magnetron sputtering at various pressure of residual gases and different temperatures of the substrate are investigated. The spectral dependences of ellipsometric parameters and of the films are determined by ellipsometry. The effective values of optical constants and are calculated. The roughness and the texture of the surfaces are obtained by Atomic-Force Microscopy (AFM) and Scanning Electronic Microscopy (SEM). One indicates that the refractive index decreases when reducing the pressure of residual gases, and the roughness decreases when elevating the temperature of the substrate. Thus, the behavior of some properties of the films at various conditions of deposition is determined.
    Źródło:
    Journal of Automation Mobile Robotics and Intelligent Systems; 2009, 3, 4; 112-114
    1897-8649
    2080-2145
    Pojawia się w:
    Journal of Automation Mobile Robotics and Intelligent Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    X-Ray Photoelectron Spectroscopy Study of Nitrogen and Aluminum-Nitrogen Doped ZnO Films
    Autorzy:
    Ievtushenko, A.
    Khyzhun, O.
    Shtepliuk, I.
    Tkach, V.
    Lazorenko, V.
    Lashkarev, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399119.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.-i
    77.55.hf
    68.55.Ln
    Opis:
    Undoped, nitrogen-doped and aluminum-nitrogen co-doped ZnO films were deposited on Si substrates by magnetron sputtering using layer-by-layer method of growth. X-ray photoelectron spectroscopy was employed to characterize electronic properties of undoped and nitrogen doped ZnO films. The effects of N and N-Al incorporation into the ZnO matrix on the X-ray photoelectron spectroscopy core-level and valence-band spectra of the films were studied and discussed.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 858-861
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Laser synthes and optimization of parameters of thin films and epitaxial layers of In4Se3, In4Te3
    Autorzy:
    Vorobets, G. I.
    Strebezhev, V. V.
    Tkach, V. M.
    Vorobets, O. I.
    Strebezhev, V. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/134893.pdf
    Data publikacji:
    2015
    Wydawca:
    Tomasz Mariusz Majka
    Tematy:
    semiconductor thin film
    epitaxial layer
    laser treatment
    indium selenide
    indium telluride
    Opis:
    The influence of the modes of laser treatment on the structural-phase state and electrical properties of thin films and epitaxial layers In4Se3, In4Te3, as well as on the thin-film structures with Schottky barrier of type Au - In4Te3 (In4Se3) are investigated. Thin films In4Se3, In4Te3 received by pulsed laser deposition of stoichiometric homogeneous crystalline materials on a dielectric substrate. The epitaxial layers of In4Se3, In4Te3 were obtained by liquid phase epitaxy. Metal contacts are created by thermal spraying of the respective metals in a vacuum p 10-6 ÷ 10-7 Torr. For the correction of electrophysical characteristics of the studied structures the pulse laser irradiation (PLI) with 1,06 m, 1 ÷ 4 ms was used. The surface morphology of the films on various stages of formation of the structures was investigated by SEM and electron diffraction, and the phase composition was monitored by method X - ray spectral electron probe microanalysis. Study of IV characteristics of film contacts Me - In4Te3 (In4Se3) allowed further identify the phase transformation and the basic mechanisms of charge transport in barrier structures after PLI. Investigation of the spectral photosensitivity of film structures showed that under optimum conditions the laser correction can be obtained the shift of the spectral characteristics from 1,7÷1,8 microns to longer wavelengths. The investigated barrier structures may be promising for use as a photodetector for fiber optic communication lines.
    Źródło:
    Journal of Education and Technical Sciences; 2015, 2, 1; 5-8
    2300-7419
    2392-036X
    Pojawia się w:
    Journal of Education and Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

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