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Wyszukujesz frazę "Szindler, Magdalena" wg kryterium: Autor


Wyświetlanie 1-5 z 5
Tytuł:
The optical parameters of TiO2 antireflection coating prepared by atomic layer deposition method for photovoltaic application
Autorzy:
Szindler, Marek
Szindler, Magdalena M.
Powiązania:
https://bibliotekanauki.pl/articles/1835965.pdf
Data publikacji:
2020
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
thin film
atomic layer deposition
titanium dioxide
Opis:
Titanium dioxide thin films have been deposited on silicon wafers substrates by an atomic layer deposition (ALD) method. There optical parameters were investigated by spectroscopic ellipsometry and UV/VIS spectroscopy. A material with a refractive index of 2.41 was obtained. Additionally, in a wide spectral range it was possible to reduce the reflection from the silicon surface below 5%. The Raman spectroscopy method was used for structural characterization of anatase TiO2 thin films. Their uniformity and chemical composition are confirmed by a scanning electron microscope (SEM) energy dispersive spectrometer (EDS).
Źródło:
Optica Applicata; 2020, 50, 4; 663-670
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Al₂O₃/TiO₂ double antireflection coating deposited by ALD method
Autorzy:
Szindler, Marek
Szindler, Magdalena M.
Orwat, Justyna
Kulesza-Matlak, Grażyna
Powiązania:
https://bibliotekanauki.pl/articles/2174838.pdf
Data publikacji:
2022
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
antireflection coating
atomic layer deposition method
solar cells
Opis:
Al₂O₃/TiO₂ thin films were deposited onto monocrystalline silicon surfaces using an atomic layer deposition. Their surface morphology and optical properties were examined for their possible use in solar cells. The surface condition and chemical composition were characterized using a scanning electron microscope and the thickness was measured using a spectroscopic reflectometer. The refractive index and the reflection characteristics were determined. First, the optical properties of the Al₂O₃ thin filmand its influence on recombination in the semiconductor were examined. In this way, it can fulfil a double role in a solar cell. Since reflection reduction was only achieved in a narrow range, it was decided to use the Al₂O₃/TiO₂ system. Thanks to this solution, the light reflection was reduced in a wide range (even below 0.2%).
Źródło:
Opto-Electronics Review; 2022, 30, 3; art. no. e141952
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Morphology of an ITO recombination layer deposited on a silicon wire texture for potential silicon/perovskite tandem solar cell applications
Autorzy:
Kulesza-Matlak, Grazyna
Szindler, Marek
Szindler, Magdalena M.
Sypien, Anna
Major, Lukasz
Drabczyk, Kazimierz
Powiązania:
https://bibliotekanauki.pl/articles/27315696.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
tandem solar cell
silicon nanowires
MAE etching
ITO
recombination layer
Opis:
This paper presents research on the deposition of an indium tin oxide (ITO) layer which may act as a recombination layer in a silicon/perovskite tandem solar cell. ITO was deposited by magnetron sputtering on a highly porous surface of silicon etched by the metal-assisted etching method (MAE) for texturing as nano and microwires. The homogeneity of the ITO layer and the degree of coverage of the silicon wires were assessed using electron microscopy imaging techniques. The quality of the deposited layer was specified, and problems related to both the presence of a porous substrate and the deposition method were determined. The presence of a characteristic structure of the deposited ITO layer resembling a "match" in shape was demonstrated. Due to the specificity of the porous layer of silicon wires, the ITO layer should not exceed 80 nm. Additionally, to avoid differences in ITO thickness at the top and base of the silicon wire, the layer should be no thicker than 40 nm for the given deposition parameters.
Źródło:
Opto-Electronics Review; 2023, 31, 4; art. no. e148222
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of heat treatment on the surface morphology and optical properties of the Al2O3 thin film for use in solar cells
Autorzy:
Szindler, Marek
Szindler, Magdalena M.
Powiązania:
https://bibliotekanauki.pl/articles/2063888.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
antireflection coating
atomic layer deposition method
solar cells
Opis:
The technology of manufacturing silicon solar cells is complex and consists of several stages. The final steps in succession are the deposition of antireflection layer and discharge contacts. Metallic contacts are usually deposited by the screen printing method and then, fired at high temperature. Therefore, this article presents the results of a research on the effect of heat treatment on the properties of the Al2O3 thin film previously deposited by the atomic layer deposition method. It works well as both passivating and antireflection coating. Moreover, heat treatment affects the value of the cell short-circuit current and, thus, its efficiency. The surface morphology, optical and electrical properties were investigated, describing the influence of heat treatment on the properties of the deposited layers and the manufactured solar cells.
Źródło:
Opto-Electronics Review; 2021, 29, 4; 181--186
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Application of Al2O3, ZnO, and TiO2 ALD thin films as antireflection coating in the silicon solar cells
Autorzy:
Szindler, Marek
Szindler, Magdalena
Powiązania:
https://bibliotekanauki.pl/articles/27315697.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
optical thin film
antireflection coating
atomic layer deposition
solar cells
Opis:
The article describes the results of a research on the surface morphology and optical properties of Al₂O₃, ZnO, and TiO₂ thin films deposited by atomic layer deposition (ALD) for applications in silicon solar cells. The surface topography and elemental composition were characterised using a scanning electron microscope, and thickness was determined using an optical reflectometer. The samples were structurally examined using a Raman spectrometer. The structural variant was identified: for Al₂O₃ it is sapphire, for TiO₂ it is anatase, and for ZnO it is wurtzite. Possibilities of minimising light reflection using single and double thin film systems below 5% were presented. For the first time, the effectiveness of these thin films on the current-voltage characteristics and electrical parameters of manufactured silicon solar cells was examined and compared. The solar cell with the highest efficiency of converting solar radiation into electricity was obtained for Al₂O₃/TiO₂ and the efficiency of such a photovoltaic device was 18.74%.
Źródło:
Opto-Electronics Review; 2023, 31, 4; art. no. e148223
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-5 z 5

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