Autor: Shpakovski, S. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Current-Voltage Characteristic Features of Diodes Irradiated with 170~MeV Xenon Ions
Autorzy:: Poklonski, N.
Gorbachuk, N.
Nha, Vo
Tarasik, M.
Shpakovski, S.
Filipenia, V.
Skuratov, V.
Wieck, A.
Kołtunowicz, T.
Powiązania:: https://bibliotekanauki.pl/articles/1400481.pdf
Data publikacji:: 2013-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.Jv
61.80.Fe
Opis:: Diodes manufactured on the wafers of single-crystalline silicon uniformly doped with phosphorus are studied. The wafer resistivity was 90 Ω cm. Xenon ions were implanted into the diodes from the side of the $p^{+}$-region (implantation energy 170 MeV, fluence Φp from $5 \times 10^7$ to $10^9 cm^{-2}$). It is shown that the formation of a continuous irradiation damaged layer with the thickness of the order of magnitude of the average projective range creates prerequisites for the negative differential resistance in the current-voltage characteristics of the irradiated diodes.
Źródło:: Acta Physica Polonica A; 2013, 123, 5; 926-928
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Effects of Fluences of Irradiation with 107 MeV Krypton Ions on the Recovery Charge of Silicon $p^{+}n$-Diodes
Autorzy:: Poklonski, N.
Gorbachuk, N.
Tarasik, M.
Shpakovski, S.
Filipenia, V.
Skuratov, V.
Wieck, A.
Kołtunowicz, T.
Powiązania:: https://bibliotekanauki.pl/articles/1503994.pdf
Data publikacji:: 2011-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.Jv
61.80.Fe
Opis:: The diodes manufactured on the wafers of single-crystalline silicon uniformly doped with phosphorus are studied. The wafer resistivity was 90 Ω cm. Krypton ions are implanted to the side of the $p^{+}$-region of diodes (energy 107 MeV, fluence Φp from 5 × $10^7$ to 4 × $10^9 cm^{-2}$). It is shown that recovery charge $Q_{rr}$ is inversely proportional to the square root of the irradiation fluence value Φp. When the fluence increases, the part of the recovery charge Q_{rrA}, due to the high reverse conductance phase, decreases faster than the value $Q_{rr}$.
Źródło:: Acta Physica Polonica A; 2011, 120, 1; 111-114
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon Diodes
Autorzy:: Poklonski, N.
Gorbachuk, N.
Nha, Vo
Shpakovski, S.
Filipenya, V.
Skuratov, V.
Kołtunowicz, T.
Kukharchyk, N.
Becker, H.
Wieck, A.
Powiązania:: https://bibliotekanauki.pl/articles/1402222.pdf
Data publikacji:: 2015-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.Jv
61.80.Fe
Opis:: Silicon diodes irradiated with helium ions with energies of 4.1, 6.8 and 8.9 MeV are studied. It is shown that the mechanism determining the behaviour of frequency dependence of complex electric module and correspondingly the behavior of impedance of diodes irradiated with helium ions in the frequency region 3-200 kHz is a recharging of vacancy complexes localized in the space charge region.
Źródło:: Acta Physica Polonica A; 2015, 128, 5; 891-893
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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