Current-Voltage Characteristic Features of Diodes Irradiated with 170~MeV Xenon Ions

Diodes manufactured on the wafers of single-crystalline silicon uniformly doped with phosphorus are studied. The wafer resistivity was 90 Ω cm. Xenon ions were implanted into the diodes from the side of the $p^{+}$-region (implantation energy 170 MeV, fluence Φp from $5 \times 10^7$ to $10^9 cm^{-2}$). It is shown that the formation of a continuous irradiation damaged layer with the thickness of the order of magnitude of the average projective range creates prerequisites for the negative differential resistance in the current-voltage characteristics of the irradiated diodes.