Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "Sallese, J.-M." wg kryterium: Autor

  Lista filtrów
Wyrównaj
    Wyświetlanie 1-7 z 7
    Tytuł:
    Downscaling and short channel effects in twin gate junctionless vertical slit FETs
    Autorzy:
    Barbut, L
    Jazaeri, F
    Bouvet, D
    Sallese, J.-M.
    Powiązania:
    https://bibliotekanauki.pl/articles/397813.pdf
    Data publikacji:
    2013
    Wydawca:
    Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
    Tematy:
    junctionless
    VeSFET
    DIBL
    SCE
    design space
    przestrzeń projektowa
    Opis:
    In this work, we present the performance constraints in the design of ultra-thin body Junctionless Vertical Slit Field Effect Transistor (JL VeSFET). A design space that take into account the intrinsic off-current, the sub-threshold swing and the drain induced barrier lowering is investigated with respect to key technological parameters, namely, the doping level in the channel, the minimum slit width, and the effective radius of the slit. This work could serve as a guideline for technology optimization, design and scaling of JL VeSFETs.
    Źródło:
    International Journal of Microelectronics and Computer Science; 2013, 4, 3; 103-109
    2080-8755
    2353-9607
    Pojawia się w:
    International Journal of Microelectronics and Computer Science
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    SPICE simulation of passive N-type guard rings in smart power ICs
    Autorzy:
    Buccella, P.
    Stefanucci, C.
    Sallese, J.-M.
    Kayal, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/397726.pdf
    Data publikacji:
    2015
    Wydawca:
    Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
    Tematy:
    substrate modeling
    noise coupling
    power parasitic modelling
    modelowanie substratów
    sprzężenie zakłóceń
    zasilanie pasożytnicze
    Opis:
    When designing in Smart Power technologies, TCAD simulations are mandatory to design effective passive protections against parasitic couplings due to minority carriers. The objective of this paper is to propose a SPICE-based approach to characterize electrical key parameters of a passive protection directly within standard IC design flow avoiding time consuming TCAD simulations. Our approach consists in integrating a new substrate model in SPICE to enable designers to derive themselves process specific design rules and reduce substrate couplings. This methodology enables designers to access valuable results in the early stage of IC design, where before such results could be obtained only in the final verification step.
    Źródło:
    International Journal of Microelectronics and Computer Science; 2015, 6, 2; 64-68
    2080-8755
    2353-9607
    Pojawia się w:
    International Journal of Microelectronics and Computer Science
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Advanced compact modeling of the deep submicron technologies
    Autorzy:
    Grabiński, W.
    Bucher, M.
    Sallese, J.-M.
    Krummenacher, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/309312.pdf
    Data publikacji:
    2000
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    ultra deep submicron (UDSM) technology
    compact modeling
    EKV MOS transistor model
    MOSFET
    matching
    low power
    RF applications
    Opis:
    The technology of CMOS large-scale integrated circuits (LSI's) achieved remarkable advances over last 25 year and the progress is expected to continue well into the next century. The progress has been driven by the downsizing of the active devices such as MOSFETs. Approaching these dimensions, MOSFET characteristics cannot be accurately predicted using classical modeling methods currently used in the most common MOSFET models such as BSIM, MM9 etc, without introducing large number of empirical parameters. Various physical effects that needed to be considered while modeling UDSM devices: quantization of the inversion layer, mobility degradation, carrier velocity saturation and overshoot, polydepletion effects, bias dependent source/drain resistances and capacitances, vertical and lateral doping profiles, etc. In this paper, we will discuss the progress in the CMOS technology and the anticipated difficulties of the sub-0.25 žm LSI downsizing. Subsequently, basic MOSFET modeling methodologies that are more appropriate for UDSM MOSFETs will be presented as well. The advances in compact MOSFET devices will be illustrated using application examples of the EPFL EKV model
    Źródło:
    Journal of Telecommunications and Information Technology; 2000, 3-4; 31-42
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Measurement and performance evaluation of a silicon on insulator pixel matrix
    Autorzy:
    Ntavelis, D.
    Harik, L.
    Sallese, J.-M.
    Kayal, M.
    Hatzopoulos, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/397821.pdf
    Data publikacji:
    2010
    Wydawca:
    Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
    Tematy:
    technika SOI tranzystora polowego MOS
    czujnik obrazu
    pompować ładunek
    pierwsza kolejność delta-sigma
    SOI MOSFET
    image sensors
    charge pumping
    first order delta-sigma
    Opis:
    A new technique for driving silicon-on-insulator pixel matrixes has been proposed in |1|, which was based on transient charge pumping for evacuating the extra photo-generated charges from the body of the transistor. An 8x8 pixel matrix was designed and fabricated using the above technique. In this paper, the measurement set-up is described and the performance evaluation procedure is given, together with results of its implementation on the fabricated pixel matrix. The results show the applicability of the charge pumping technique and the effective operation of the image sensor.
    Źródło:
    International Journal of Microelectronics and Computer Science; 2010, 1, 3; 299-304
    2080-8755
    2353-9607
    Pojawia się w:
    International Journal of Microelectronics and Computer Science
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Offset Drift Dependence of Hall Cells with their Designed Geometry
    Autorzy:
    Paun, M. A.
    Sallese, J. M.
    Kayal, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/226531.pdf
    Data publikacji:
    2013
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    hall effect sensor
    individual and residual offset drift
    temperature coefficient
    Opis:
    In this paper, the performance of CMOS Hall Effect Sensors with four different geometries has been experimentally studied. Using a characteristic measurement system, the cells residual offset and its temperature behavior were determined. The offset, offset drift and sensitivity are quantities that were computed to determine the sensors performance. The temperature coefficient of specific parameters such as individual, residua offset and resistance has been also investigated. Therefore the optimum cell to fit the best in the performance specifications was identified. The variety of tested shapes ensures a good analysis on how the sensors performance changes with geometry.
    Źródło:
    International Journal of Electronics and Telecommunications; 2013, 59, 2; 169-175
    2300-1933
    Pojawia się w:
    International Journal of Electronics and Telecommunications
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Hall effect sensors performance investigation using three-dimensional simulations
    Autorzy:
    Paun, M.-A.
    Sallese, J.-M.
    Kayal, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/398136.pdf
    Data publikacji:
    2011
    Wydawca:
    Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
    Tematy:
    hallotron
    wygładzanie numeryczne
    symulacja fizyczna
    symulacja 3D
    hall effect sensor
    numerical offset
    numerical drift
    3D physical simulations
    Opis:
    Several Hall effect sensors were modeled and evaluated regarding the Hall voltage and sensitivity using 3D physical simulations. For accurate results the numerical offset and its temperature drift were analyzed. The versatility of the simulation allows various Hall sensor implementations. The simulation procedure could guide the designer in choosing the Hall cell optimum fabrication process, shape and dimensions in terms of the performances envisaged to be achieved.
    Źródło:
    International Journal of Microelectronics and Computer Science; 2011, 2, 4; 140-145
    2080-8755
    2353-9607
    Pojawia się w:
    International Journal of Microelectronics and Computer Science
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Spice simulation of substrate potential shift in HVCMOS technologies
    Autorzy:
    Stefanucci, C.
    Buccella, P.
    Kayal, M.
    Sallese, J.-M.
    Powiązania:
    https://bibliotekanauki.pl/articles/397879.pdf
    Data publikacji:
    2015
    Wydawca:
    Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
    Tematy:
    Smart Power ICs
    HVCMOS modeling
    vertical bipolar transistor
    substrate potential shift
    Smart Power
    modelowanie HVCMOS
    pionowy tranzystor bipolarny
    Opis:
    High voltage CMOS active devices inherently include a parasitic vertical PNP bipolar transistor. When activated it injects holes into the substrate causing a dangerous potential shift. In this work a spice-modeling approach based on transistor layout is presented to simulate substrate de-biasing in Smart Power ICs. The proposed model relies on a parasitic substrate network without the need of a parasitic BJT in HVCMOS compact models. The results are compared with TCAD simulations at different temperatures showing good agreement. Potential shift of the substrate is analysed for different geometrical configurations to estimate the effect of P+ grounding schemes and backside contact.
    Źródło:
    International Journal of Microelectronics and Computer Science; 2015, 6, 4; 142-147
    2080-8755
    2353-9607
    Pojawia się w:
    International Journal of Microelectronics and Computer Science
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-7 z 7

      Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies