- Tytuł:
- Transmission Electron Microscopy Studies of Kr$\text{}^{+}$-Implanted Silicon
- Autorzy:
- Morawiec, J.
- Powiązania:
- https://bibliotekanauki.pl/articles/1931308.pdf
- Data publikacji:
- 1994-05
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
61.16.Bg
61.72.Ff
61.72.Qq
61.72.Tt
68.35.Fx
81.40.Gh - Opis:
- The structure and the depth distribution of radiation damage caused in ⟨111⟩ Si by high-dose krypton implantations (E$\text{}_{i}$ = 150 keV, T$\text{}_{i}$ = RT, D$\text{}_{1}$ = 5 × 10$\text{}^{15}$, D$\text{}_{2}$ = 1 × 10$\text{}^{16}$ and D$\text{}_{3}$ = 5 × 10$\text{}^{16}$ cm$\text{}^{-2}$) have been investigated using techniques of transmission electron microscopy. Formation of secondary defects (Kr bubbles and microtwins) on subsequent different annealing procedures, i.e. during solid phase epitaxial regrowth of damaged layers by conventional furnace heating and liquid phase epitaxial regrowth by applying laser pulses is compared and discussed.
- Źródło:
-
Acta Physica Polonica A; 1994, 85, 5; 819-824
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł