Autor: Kudła, A. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: KRONIKA. Województwo katowickie
Autorzy:: Kudła, A.
Powiązania:: https://bibliotekanauki.pl/articles/536173.pdf
Data publikacji:: 1959
Wydawca:: Narodowy Instytut Dziedzictwa
Tematy:: prace konserwatorskie w woj. katowickim 1955-58
Źródło:: Ochrona Zabytków; 1959, 3-4; 268-269
0029-8247
Pojawia się w:: Ochrona Zabytków
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Photoelectric measurements of the local values of the effective contact potential difference in the MOS structure
Autorzy:: Kudła, A.
Przewłocki, H.
Brzezińska, D.
Borowicz, L.
Powiązania:: https://bibliotekanauki.pl/articles/308842.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: MIS structure
photoelectrical methods
internal photoemission
contact potential difference
Opis:: We have shown that using focused UV laser beam in photoelectric methods it is possible to measure local phi MS values over the gate area of a single MOS structure. The phi MS distribution is such that its values are highest far away from the gate edges regions, lower in the vicinity of gate edges and still lower in the vicinity of gate corners. Examples of measurement results and description of the measurement system are presented. The dependence of the phi MS value on the exposure time and the power density of UV light is discussed.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 112-114
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Ultra-shallow nitrogen plasma implantation for ultra-thin silicon oxynitride (SiOxNy) layer formation
Autorzy:: Bieniek, T.
Beck, R. B.
Jakubowski, A.
Kudła, A.
Powiązania:: https://bibliotekanauki.pl/articles/308830.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: MOS technology
plasma processing
shallow implantation
radiation damage
Opis:: The radiation damage caused by low energy r.f. plasmas has not been, to our knowledge, studied so far in the case of symmetric planar plasma reactors that are usually used for PECVD processes. The reason is that, unlike nonsymmetrical RIE reactors, such geometry prevents, basically, high-energy ion bombardment of the substrate. In this work, we present the results of experiments in which we have studied the influence of plasma processing on the state of silicon surface. Very low temperature plasma oxidation has been used as a test of silicon surface condition. The obtained layers were then carefully measured by spectroscopic ellipsometry, allowing not only the thickness to be determined accurately, but also the layer composition to be evaluated. Different plasma types, namely N2, NH3 and Ar, were used in the first stage of the experiment, allowing oxidation behaviour caused by the exposure to those plasma types to be compared in terms of relative differences. It has been clearly proved that even though the PECVD system is believed to be relatively safe in terms of radiation damage, in the case of very thin layer processing (e.g., ultra-thin oxynitride layers) the effects of radiation damage may considerably affect the kinetics of the process and the properties of the formed layers.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 70-75
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Effects of stress annealing on the electrical and the optical properties of MOS devices
Autorzy:: Rzodkiewicz, W.
Kudła, A.
Rawicki, Z.
Przewłocki, H. M.
Powiązania:: https://bibliotekanauki.pl/articles/308838.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: stress
MOS
Si-SiO2 system
electrical parameters
refractive index
Opis:: In this paper we show the results of a study of the effects of high-temperature stress annealing in nitrogen on the refraction index of SiO2 layers and electrical properties in metal-oxide-semiconductor (MOS) devices. We have experimentally characterized the dependence of the reduced effective contact potential difference (ECPD), the effective oxide charge density (Neff), and the mid-gap interface trap density (Dit) on the annealing conditions. Subsequently, we have correlated such properties with the dependence of the refraction index and oxide stress on the annealing conditions and silicon dioxide thickness. Also, the dependence of mechanical stress in the Si-SiO2 system on the oxidation and annealing conditions has been experimentally determined. We consider the contributions of the thermal-relaxation and nitrogen incorporation processes in determining changes in the SiO2 layer refractive index and the electrical properties with annealing time. This description is consistent with other annealing studies carried out in argon, where only the thermal relaxation process is present.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 115-119
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Comparison of the barrier height measurements by the Powell method with the phi MS measurement results
Autorzy:: Piskorski, K.
Kudła, A.
Rzodkiewicz, W.
Przewłocki, H. M.
Powiązania:: https://bibliotekanauki.pl/articles/308846.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: barrier height
effective contact potential difference
MOS system
Opis:: In this work, we have compared the barrier height measurements carried out using the Powell method with the photoelectric effective contact potential difference (phi MS) measurement results. The photoelectric measurements were performed on the samples that were previously applied in the investigation of the influence of stress on the duration of annealing in nitrogen. This paper shows that the results of barrier height measurement using the Powell method differ significantly from the phi MS measurement results.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 120-123
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 6.

Tytuł:: Variability of the local phi MS values over the gate area of MOS devices
Autorzy:: Przewłocki, H. M.
Kudła, A.
Brzezińska, D.
Massoud, H. Z.
Powiązania:: https://bibliotekanauki.pl/articles/308803.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: MOS structure
photoelectric measurements
electrical parameters
mechanical stress
Opis:: The local value distributions of the effective contact potential difference (ECPD or the phi MS factor) over the gate area of Al-SiO2-Si structures were investigated for the first time. A modification of the photoelectric phi MS measurement method was developed, which allows determination of local values of this parameter in different parts of metaloxide-semiconductor (MOS) structures. It was found that the phi MS distribution was such, that its values were highest far away from the gate edge regions (e.g., in the middle of a square gate), lower in the vicinity of gate edges and still lower in the vicinity of gate corners. These results were confirmed by several independent photoelectric and electrical measurement methods. A model is proposed of this distribution in which the experimentally determined phi MS (x; y) distributions, found previously, are attributed to mechanical stress distributions in MOS structures. Model equations are derived and used to calculate phi MS (x; y) distributions for various structures. Results of these calculations remain in agreement with experimentally obtained distributions. Comparison of various characteristics calculated using the model with the results of photoelectric and electrical measurements of a wide range of Al-SiO2-Si structures support the validity of the model.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 34-44
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 7.

Tytuł:: Photoelectronic measurement methods and the universal measurement system for precise parameter determination of semiconductor structures
Autorzy:: Machalica, P.
Porębski, S.
Zając, J.
Borowicz, L.
Kudła, A.
Przewłocki, H. M.
Powiązania:: https://bibliotekanauki.pl/articles/378409.pdf
Data publikacji:: 2002
Wydawca:: Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
Opis:: In this article a new Multifunctional System for Photoelectric Measurements of Semiconductor Structures (MSPM) is presented. The system enables very accurate photocurrent measurements at levels as low as 10 fA. Measured structures can be biased by sequences of DC voltages and stimulated by light beams of predefined wavelengths and powers. The software controls all the system actions allowing flexibility in retrieving data stored in the related databases.
Źródło:: Electron Technology : Internet Journal; 2001-2002, 34, 5; 1-7
1897-2381
Pojawia się w:: Electron Technology : Internet Journal
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 8.

Tytuł:: Testing of carbon fibres as tool electrodes in micro electrical discharge machining
Autorzy:: Kudla, L.
Trych, A.
Powiązania:: https://bibliotekanauki.pl/articles/385286.pdf
Data publikacji:: 2009
Wydawca:: Sieć Badawcza Łukasiewicz - Przemysłowy Instytut Automatyki i Pomiarów
Tematy:: electrical discharge machining (EDM)
micromachining
carbon fibres electrodes
Opis:: The aim of this paper is to present the outcomes of the experiments concerning micro electrical discharge machining with the use of carbon fibres as tool electrodes. Key properties of carbon fibres are discussed and the procedure of such electrodes fabrication is also described. Conducted tests indicate promising perspectives for machining with such electrodes by means of shaping microcavities, but at the same time they reveal problems. A longitudinal machining as well as experiments with different electric parameters were presented. Finally, the influence of discharge energy is being considered.
Źródło:: Journal of Automation Mobile Robotics and Intelligent Systems; 2009, 3, 4; 153-156
1897-8649
2080-2145
Pojawia się w:: Journal of Automation Mobile Robotics and Intelligent Systems
Dostawca treści:: Biblioteka Nauki

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