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    Wyświetlanie 1-5 z 5
    Tytuł:
    Impact of Thin LT-GaN Cap Layers on the Structural and Compositional Quality of MOVPE Grown InGaN Quantum Wells Investigated by TEM
    Autorzy:
    Ivaldi, F.
    Kret, S.
    Szczepańska, A.
    Czernecki, R.
    Kryśko, M.
    Grzanka, S.
    Leszczyński, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048084.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.35.bg
    68.37.Lp
    68.65.Fg
    Opis:
    Two samples containing InGaN quantum wells have been grown by metal-organic vapor phase epitaxy on high pressure grown monocrystalline GaN (0001). Different growth temperatures have been used to grow the wells and the barriers. In one of the samples, a low temperature GaN layer (730°C) has been grown on every quantum well before rising the temperature to standard values (900°C). The samples have been investigated by transmission electron microscopy and X-ray diffraction. Photoluminescence spectra have been measured as well. The influence of the LT-GaN has been investigated in regard to its influence on the structural and compositional quality of the sample.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 660-662
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Near IR Refractive Index for GaInN Heavily Doped with Silicon
    Autorzy:
    Cywiński, G.
    Kudrawiec, R.
    Rzodkiewicz, W.
    Kryśko, M.
    Litwin-Staszewska, E.
    Misiewicz, J.
    Skierbiszewski, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791356.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.uj
    78.66.Fd
    81.15.Hi
    68.55.-a
    78.20.-e
    Opis:
    The authors report on growth and results of infrared measurements of GaInN heavily doped with silicon. The lattice matched to GaN epitaxial layer of $Ga_{0.998}In_{0.002}N:Si$ has been grown in plasma assisted molecular beam epitaxy in the metal rich conditions. The room temperature Hall concentration and mobility of electrons are 2× $10^{20} cm^{-3}$ and 67 $cm^{2}$/(Vs), respectively. The refractive index has been determined by variable angle spectroscopic ellipsometry. The refractive index exhibited a significant reduction of its value (from 2.25 to 2 at 1.55 μm) at near IR range where are the main interests of potential applications for nitride based intersubband devices. Reported here values of refractive indices at 1.55 and 1.3 μm are appropriate for fabrication of cladding layers with the required contrast to GaN for intersubband devices. The observed drop of refractive index is attributed to the carrier-induced plasma edge effect, which has been directly observed in reflectance spectrum.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 936-938
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Enhancement of Intersubband Absorption in GaInN/AlInN Quantum Wells
    Autorzy:
    Cywiński, G.
    Skierbiszewski, C.
    Siekacz, M.
    Kryśko, M.
    Feduniewicz-Żmuda, A.
    Gladysiewicz, M.
    Kudrawiec, R.
    Misiewicz, J.
    Nevou, L.
    Kheirodin, N.
    Julien, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811923.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Fs
    78.67.De
    68.65.Fg
    73.21.Fg
    81.15.Hi
    Opis:
    GaInN/AlInN multiple quantum wells were grown by RF plasma-assisted molecular beam epitaxy on (0001) GaN/sapphire substrates. The strain-engineering concept was applied to eliminate cracking effect and to improve optical parameters of intersubband structures grown on GaN substrates. The high quality intersubband structures were fabricated and investigated as an active region for applications in high-speed devices at telecommunication wavelengths. We observed the significant enhancement of intersubband absorption with an increase in the barrier thickness. We attribute this effect to the better localization of the second electron level in the quantum well. The strong absorption is very important on the way to intersubband devices designed for high-speed operation. The experimental results were compared with theoretical calculations which were performed within the electron effective mass approximation. A good agreement between experimental data and theoretical calculations was observed for the investigated samples.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1093-1099
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Crack Free GaInN/AlInN Multiple Quantum Wells Grown on GaN with Strong Intersubband Absorption at 1.55μm
    Autorzy:
    Cywiński, G.
    Skierbiszewski, C.
    Feduniewicz-Żmuda, A.
    Siekacz, M.
    Nevou, L.
    Doyennette, L.
    Julien, F. H.
    Prystawko, P.
    Kryśko, M.
    Grzanka, S.
    Grzegory, I.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2046911.pdf
    Data publikacji:
    2006-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.65.Fg
    78.66.-w
    78.67.De
    78.40.Fy
    81.15.Hi
    Opis:
    Crack free GaInN/AlInN multiple quantum wells were grown by rf plasma-assisted molecular beam epitaxy on (0001) GaN/sapphire substrates. The strain-engineering concept was applied to eliminate cracking effect for growth of intersubband structures on GaN. Indium contained ternary compounds of barrier and well layers are contrary strained to the substrate material. A series of crack free GaInN/AlInN intersubband structures on (0001) GaN was fabricated and investigated. The assumed composition and layered structure were confirmed by room temperature photoluminescence and X-ray diffraction measurements. The intersubband measurements were done in multipass waveguide geometry by applying direct intersubband absorption and photoinduced intersubband absorption measurements. The optimized structure design contains forty periods of Si-doped GaInN/AlInN quantum wells and exhibits strong intersubband absorption.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 2; 175-181
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optically Pumped Laser Action on Nitride Based Separate Confinement Heterostructures Grown along the (11¯20) Crystallographic Direction
    Autorzy:
    Teisseyre, H.
    Szymański, M.
    Khachapuridze, A.
    Skierbiszewski, C.
    Feduniewicz-Żmuda, A.
    Siekacz, M.
    Łucznik, B.
    Kamler, G.
    Kryśko, M.
    Suski, T.
    Perlin, P.
    Grzegory, I.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047728.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Px
    78.45.+h
    78.66.Fd
    Opis:
    The intention of this work is to discuss and report on our research on nonpolar laser structures grown on bulk GaN crystal substrates along the (11¯20) nonpolar direction. The main advantages of such nonpolar structures are related to the elimination of the built-in electric fields present in commonly used systems grown along the polar (0001) axis of nitride crystals. We demonstrated the optically pumped laser action on separate confinement heterostructures. Laser action is clearly shown by spontaneous emission saturation, abrupt line narrowing, and strong transversal electric polarization of output light. The lasing threshold was reached at an excitation power density of 260 kW/cm$\text{}^{2}$ for a 700μm long cavity (at room temperature).
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 467-472
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

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