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Wyświetlanie 1-15 z 28
Tytuł:
Arsenic Antisite Defects Correlations in Low Temperature MBE GaAs
Autorzy:
Korona, K. P.
Powiązania:
https://bibliotekanauki.pl/articles/1933702.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Yg
73.61.Ey
Opis:
GaAs layers grown by molecular beam epitaxy at low temperatures (LT GaAs) have several interesting properties. For example, concentrations up to 2 × 10$\text{}^{20}$ cm$\text{}^{-3}$ of neutral and up to 5 × 10$\text{}^{18}$ cm$\text{}^{-3}$ of positively charged As$\text{}_{Ga}$defects have been determined in as grown layers. It has been observed that electrical transport in LT GaAs is dominated by hopping conductivity. In the as grown and annealed up to 400°C layers, experiments show a high mobility of photo-excited electrons up to 20000cm$\text{}^{2}$/(V s) at about 130 K. Taking into account the very high concentration of ionized defects in LT GaAs, the best possible explanation of the measured value of mobility is an assumption that As$\text{}_{Ga}^{+}$ defects interact with ionized acceptors A¯. This leads to creation of As$\text{}_{Ga}^{+}$-A¯ dipoles, which do not scatter electrons as efficiently as single ions. It has been shown that the donor-acceptor correlation could be destroyed by illumination whichv. Also analysis of hopping conductivity suggests the existence of the donor-acceptor correlations in non-illuminated LT GaAs. Numerical calculation of As$\text{}_{Ga}$-acceptors interaction has been done. It shows that at least below 200 K dipole formation in LT GaAs is possible and could lead to observed increase in mobility.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 643-653
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Model of Hopping between Deep Centers in Low Temperature GaAs
Autorzy:
Korona, K. P.
Kamińska, M.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1872627.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.50.+t
72.80.Ey
Opis:
A model explaining hopping conductivity via EL2 deep centers in low temperature GaAs is presented. It is proposed that the wave function of the EL2 center consists of a localized part and of an external one. The model can describe such features as large wave function radius of hopping centers, changes of the conductivity during transition of EL2 to the metastable state and a high potential fluctuation amplitude.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 337-340
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dynamics of Photoexcited Carriers in GaInAs/GaAs Quantum Dots
Autorzy:
Ilczuk, E.
Korona, K. P.
Babiński, A.
Kuhl, J.
Powiązania:
https://bibliotekanauki.pl/articles/2028722.pdf
Data publikacji:
2001-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.40.+w
78.47.+p
78.67.-n
Opis:
We present photocurrent and time-resolved photoluminescence investigations of AlGaAs/GaInAs/GaAs structures containing GaInAs/GaAs self-assembled quantum dots. The high electrical field in those devices significantly influences carrier dynamics. The photocurrent spectra show a double peak with maxima at 1.40 and 1.47 eV (at 80 K). These maxima are due to the GaInAs wetting layer (higher) and the quantum dots (lower). The photoluminescence spectra comprise weak excitonic luminescence from GaAs at 1.504 eV (at 80 K) and stronger and broad emission from the Ga$\text{}_{0.4}$In$\text{}_{0.6}$As quantum dots. At 300 K, the quantum dots emission has a lifetime of 1.1 ns and has a maximum at an energy of 1.38 eV. By analysis of both experiments, we can separate the influence of different radiative and nonradiative recombination processes. So, the tunneling rate: r$\text{}_{T}$=0.5 ns$\text{}^{-1}$ and the radiative recombination rate in the quantum dots: r$\text{}_{RQD}$=0.4 ns$\text{}^{-1}$ have been determined. The high tunneling probability (due to the influence of the built-in electric field) reveals that the tunneling effect is important for the recombination and transport processes in our structures.
Źródło:
Acta Physica Polonica A; 2001, 100, 3; 379-386
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dielectric Function Theory Calculations of Polaritons in GaN
Autorzy:
Korona, K. P.
Stępniewski, R. Stępniewski
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1968249.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
71.36.+c
Opis:
Properties of polaritons (free excitons coupled with photons of similar energy) in gallium nitride are investigated by performing calculations based on dielectric function theory including all three excitons A, B and C (characteristic for the wurtzite structure). Moreover the excited states of excitons have been taken into account by adding Elliott's components to dielectric function. Energies, polarizabilities and damping constants of excitons are determined. It is shown that due to inter-exciton interactions the B and C excitons are strongly damped. It is estimated that the characteristic time of B to A relaxation is t$\text{}_{BA}$=1 ps. The exciton C lifetime is estimated τ$\text{}_{C}$=0.2 ps.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 867-870
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dynamics of Excitation Transfer Inside InAs/GaAs Quantum Dot System
Autorzy:
Korona, K. P.
Babiński, A.
Raymond, S.
Wasilewski, Z.
Powiązania:
https://bibliotekanauki.pl/articles/2046919.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.47.+p
72.20.Jv
78.67.Hc
78.55.Cr
Opis:
We present time-resolved photoluminescence investigations of InAs/GaAs structures containing quantum dots with the ground state at 1.43 eV. State filling effect and a Pauli blocking effect were clearly observed. These effects significantly influenced dynamics of excitation transfer from upper to lower state inside a dot leading to non-exponential dynamics. Numerical model based on nonlinear rate equations was proposed. The model described well the experimental data providing values of: lifetime of the ground state 0.53±0.03 ns, lifetime of excited state (when the ground state is full) 1.1±0.2 ns, and internal relaxation time (when the ground state is empty) 0.07±0.01 ns.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 219-224
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Electric Field on Recombination Dynamics of Quantum Confined Carriers
Autorzy:
Korona, K. P.
Borysiuk, J.
Skierbiszewski, C.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/2047384.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.47.+p
72.20.Jv
78.55.Cr
Opis:
We present time-resolved photoluminescence measurements of GaN/AlGaN low dimensional structures showing very characteristic changes of dynamics related to strong electric field. Strong piezoelectric and spontaneous polarizations built-in in nitride structures lead to the changes in spatial separation of carriers which leads to changes in recombination energies and radiative lifetimes of the carriers. The observed effect can be well described by a simple exponential relation. The observed dependence can be explained by an approximated model of quantum-confined Stark effect based on the Airy functions.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 243-247
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoreflectance Measurements of InGaAs/GaAs Quantum Wells
Autorzy:
Tomaszewicz, T.
Korona, K. P.
Bożek, R.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1952324.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Bd
73.20.Dx
78.66.Fd
Opis:
Samples with InGaAs/GaAs quantum wells were grown by metallo-organic chemical vapour deposition in order to detect and analyze GaSb islands deposited on the surface. Results of photoreflectance measurements of quantum wells are reported. The correspondence between broadening of quantum well transition lines and GaSb structures has been observed.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 965-968
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Multiband GaN/AlGaN UV Photodetector
Autorzy:
Korona, K. P.
Drabińska, A.
Pakuła, K.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/2046918.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.40.+w
73.61.Ey
73.40.Kp
Opis:
We present optical and electrical measurements made on GaN/AlGaN photodetector structure capable to detect three UV ranges, tuned by external voltage. The highest band at energy of about 3.85 eV is nearly independent of bias applied to the Schottky contact. Photosensitivity of the second band at about 3.65 eV changes strongly with the bias. Signal in this range increases about 20 times when the bias changes from 0 V to -4 V. Photosensitivity of the third band (3.4 eV) appears for strong reverse bias (-3 V). Characteristics of the detector are in qualitative agreement with numerical model, however deep centers present in the AlGaN layers cause quantitative discrepancies. The concentration of defects of the order of 10$\text{}^{16}$ cm$\text{}^{-3}$ was estimated from current transients.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 211-217
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deep Defects in Low-Temperature GaAs
Autorzy:
Korona, K. P.
Muszalski, J.
Kamińska, M.
Weber, E. R.
Powiązania:
https://bibliotekanauki.pl/articles/1923822.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
72.80.Ey
Opis:
Conductivity of GaAs layers grown by molecular beam epitaxy at low substrate temperature (190-200°C) and then annealed at few different temperatures (between 300 and 600°C) were studied. It was confirmed that electron transport is due to hopping between arsenic antisite defects. Parameters describing hopping conductivity and their dependence on temperature of annealing are discussed. Other deep defects with activation energies of 0.105, 0.30, 0.31, 0.47, 0.55 eV were found using photoinduced current transient spectroscopy measurements.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 821-824
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deep Level Transient Spectroscopic Studies of MOCVD GaN Layers Grown on Sapphire
Autorzy:
Śliwiński, A. A.
Korona, K. P.
Pakuła, K.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1952204.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
73.61.Ey
Opis:
The deep level transient spectroscopy of GaN heteroepitaxial layers grown on sapphire was studied. The samples were Mg doped during the growth. The as-grown material is n-type. It becomes p-type after annealing. The samples were measured in the temperature range from 77 K to 420 K. In n-type GaN, one peak (EG1) with activation energy 0.75 eV was detected. In p-type, at least three peaks were observed: AS1 at temperature about 300 K and AS2, AS3 at about 400 K. The dominating one is AS3. It has an activation energy about 1.1 eV.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 955-958
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Badanie procesu transferu ładunku wzbudzanego światłem w organicznych ogniwach słonecznych za pomocą czasowo rozdzielczej fotoluminescencji i pobudzanego światłem elektronowego rezonansu spinowego
Detection of Photo-Induced Charge Transfer in Organic Solar Cells by Time-Resolved Photoluminescence and Light-Induced Electron Spin Reseonance
Autorzy:
Grankowska-Ciechanowicz, S.
Iwan, A.
Wołoś, A.
Korona, K. P.
Kamińska, M.
Powiązania:
https://bibliotekanauki.pl/articles/160166.pdf
Data publikacji:
2014
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Elektrotechniki
Tematy:
transfer ładunku
organiczne ogniwa słoneczne
czasowo rozdzielcza fotoluminescencja
pobudzany światłem elektronowy rezonans spinowy
charge transfer
organic solar cells
TRPL
(L)ESR
Opis:
Organiczne ogniwa słoneczne są jednym z obiecujących sposobów przetwarzania energii słonecznej w elektryczną. Procesem mającym decydujący wpływ na ich działanie, jest transfer ładunku wzbudzany światłem. Techniki pomiarowe, które znalazły zastosowanie do bezpośredniej detekcji tego procesu, to czasowo rozdzielcza fotoluminescencja (TRPL – ang. time-resolved photoluminescence) i pobudzany światłem elektronowy rezonans spinowy (LESR – ang. light-induced electron spin resonance). Efektywny transfer ładunku, przy pomocy TRPL, rejestrowany jest jako wygaszanie luminescencji w wyniku przestrzennego rozseparowania ładunków przeciwnego znaku, a za pomocą LESR jako dwie linie pochodzące od dodatniego polaronu po stronie donora i ujemnego polarnu po stronie akceptora. W niniejszej pracy omówione zostaną wymienione techniki pomiarowe oraz ich zastosowanie do detekcji efektywnego transferu ładunku w organicznych ogniwach słonecznych.
The organic solar cells are considered as promising way to convert solar energy into electricity. A crucial step in their operations is a photo-induced charge transfer (CT). Techniques, which directly detect this phenomenon, are Time-Resolved Photoluminescence (TRPL) and Light-induced Electron Spin Resonance (LESR). Effective photo-induced CT results in electrons and holes separation and creation of positive and negative polarons. First process is registered by TRPL as luminescence quenching, second by LESR as two lines, one from positive, and another from negative polarons. In this article, both techniques will be described as well their application in effective CT detection.
Źródło:
Prace Instytutu Elektrotechniki; 2014, 264; 65-71
0032-6216
Pojawia się w:
Prace Instytutu Elektrotechniki
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Highly Compensated GaAs Crystal Obtained by Molecular CO Doping
Autorzy:
Bożek, R.
Korona, K. P.
Nowak, G.
Wasik, D.
Słupiński, T.
Kaczor, P.
Powiązania:
https://bibliotekanauki.pl/articles/1929707.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
78.55.-m
78.20.Jq
Opis:
GaAs:C crystal was grown by liquid encapsulated Czochralski technique with large partial pressure of CO in ambient atmosphere p$\text{}_{CO}$/p$\text{}_{tot}$ = 0.2 and investigated using near and infrared absorption, photoluminescence, photoconductivity, photo-induced current transient spectroscopy and photo-Hall measurements. High resistivity of the crystal was found in electrical measurements (10$\text{}^{7}$ Ω cm, the Fermi level at 0.67 eV below conduction band at 300 K). Local vibrational mode revealed increased concentration of carbon acceptor and presence of oxygen related complexes. Photoluminescence spectra were dominated by two bands with peak energies at 1.49 eV and 0.8 eV. The near band gap emission shifts with excitation intensity up to 4 meV/decade. In photocurrent spectrum a strong photoionization band with E = 0.55 eV is observed.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 669-672
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Tuning of Spectral Sensitivity of AlGaN/GaN UV Detector
Autorzy:
Korona, K. P.
Drabińska, A.
Trajnerowicz, A.
Bożek, R.
Pakuła, K.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/2036867.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Kp
73.50.Pz
78.40.Fy
Opis:
GaN/AlGaN photodetector that exhibits new interesting property is presented. Its spectral sensitivity depends upon bias voltage. Under positive or low negative bias the detector is sensitive mainly to the ultrafiolet radiation absorbed by AlGaN layer 3.7-3.8 eV. Under negative bias U$\text{}_{B}$ below -4 V, the detector is sensitive mainly to the radiation absorbed by GaN (3.4-3.6 eV). The effect can be explained based on numerical calculations of the electric field and potential profiles of this structure. The damping of GaN signal is attributed to activity of 2D electron gas formed on the GaN/AlGaN interface by spontaneous polarization. The reappearing of the signal is attributed to tunneling of holes through AlGaN, stimulated by a high electric field.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 675-681
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Anharmonic Optical Phonon Effects in ZnO Nanocrystals
Autorzy:
Khusnutdinov, S. V.
Dynowska, E.
Zaleszczyk, W.
Makhniy, V. P.
Wysmołek, A.
Korona, K. P.
Powiązania:
https://bibliotekanauki.pl/articles/2048106.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
74.25.nd
63.20.kg
Opis:
Zinc oxide (ZnO) is a very promising material for optoelectrical devices operating at the short-wavelength end of the visible spectral range and at the near UV. The Raman scattering studies of ZnO heterolayers formed by isothermal annealing show sharp phonon lines. In addition to the A$\text{}_{1}$(TO), E$\text{}_{1}$(TO), E$\text{}_{2}^{H}$, and E$\text{}_{1}$(LO) one-phonon lines, we observed two-phonon lines identified as: E$\text{}_{2}^{H}$ - E$\text{}_{2}^{L}$, E$\text{}_{2}^{H}$ + E$\text{}_{2}^{L}$, and 2LO at 332, 541, and 1160 cm$\text{}^{-1}$, respectively (at room temperature). The identification of the E$\text{}_{2}^{H}$ - E$\text{}_{2}^{L}$ peak was confirmed by its thermal dependence. Temperature dependent measurements in the range 6-300 K show that the phonon frequencies decrease with temperature. The E$\text{}_{2}^{H}$ peak is at energy 54.44 meV (439.1 cm$\text{}^{-1}$), at 4 K and due to phonon-phonon anharmonic interaction, its energy decreases to 54.33 meV (438.2 cm$\text{}^{-1}$) at room temperature. The Grüneisen parameter found for this oscillation mode was γ$\text{}_{E}$ 2H = 1.1 at about 300 K. The intensity of the E$\text{}_{2}^{H}$ - E$\text{}_{2}^{L}$ peak increases strongly with temperature and this dependence can be described by the Bose-Einstein statistics with activation energy of 13.8 meV (nearly equal to the energy of the E$\text{}_{2}^{L}$ phonon).
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 678-680
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical and Electrical Measurements of Low-Temperature InAlAs
Autorzy:
Korona, K. P.
Wysmołek, A.
Bożek, R.
Kamińska, M.
Baranowski, J. M.
Weber, E. R.
Powiązania:
https://bibliotekanauki.pl/articles/1923833.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
73.60.Br
78.55.Cr
Opis:
Photoluminescence, photocurrent, thermally stimulated current and photoinduced current transient spectroscopy measurements done on molecular beam epitaxy In$\text{}_{0.52}$Al$\text{}_{0.48}$As layer, lattice matched to InP are reported. The investigated layers were grown on semi-insulating InP wafers, at temperature range from 215 to 450°C. It was found that the Fermi level was pinned to a dominant midgap center (most likely similar to EL2 center). Moreover, there were at least 7 other defects but with much smaller concentrations. Their activation energies were equal to 0.076, 0.11, 0.185, 0.295, 0.32 and 0.40 eV. The layers exhibited a very low luminescence and a small photocurrent.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 825-828
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 28

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