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Wyświetlanie 1-15 z 33
Tytuł:
Admittance and Permittivity in Doped Layered $TlGaSe_2$ Single Crystals
Autorzy:
Dawood, S.
Fedotov, A.
Mammadov, T.
Zukowski, P.
Koltunowicz, T.
Saad, A.
Drozdov, N.
Powiązania:
https://bibliotekanauki.pl/articles/1365735.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ey
84.37.+q
64.70.Nd
Opis:
In doped $TlGaSe_2$ crystals the phase transitions at low temperatures (100-170 K) were observed using admittance and dielectric spectroscopy in a temperature range of 80-320 K. The admittance and permittivity measurements in the studied samples indicated that after Fe or Tb doping by impurities with concentrations $N_\text{imp}$ < 0.5 at.% nonequilibrium electronic phase transition is observed. Doping with $N_\text{imp}$ > 0.5 at.% resulted in full suppression of this phase transition presence.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1267-1270
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Annealing of $(CoFeZr)_{x}(CaF_2)_{100-x}$ Nanocomposites Produced by the Ion-Beam Sputtering in the Ar and $O_2$ Ambient
Autorzy:
Kołtunowicz, T.
Zhukowski, P.
Bondariev, V.
Fedotova, J.
Fedotov, A.
Powiązania:
https://bibliotekanauki.pl/articles/1400483.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
62.23.Pq
79.20.Rf
81.40.Ef
72.80.Le
Opis:
This paper presents the investigations of electrical properties and effect of annealing on conductivity of $(CoFeZr)_{x}(CaF_2)_{100-x}$ nanocomposites produced by ion-beam sputtering in the Ar and $O_2$ ambient. Investigations into conductivity of $(CoFeZr)_{x}(CaF_2)_{100-x}$ nanocomposites depending on the measuring temperature and the annealing temperature have been performed. The application of a combined argon-oxygen beam brings about lowering of the potential barrier on the surface of nanoparticles. In the course of annealing the additional oxidation occurs. First it proceeds on the surface and then all through the metallic-phase particles.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 932-934
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Application of HPLC for the Analysis of Secoisolariciresinol Diglucoside in Flaxseeds
Autorzy:
Feskova, A.
Luhin, V.
Leontiev, V.
Sovastei, O.
Koltunowicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1400438.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
82.80.Bg
82.80.Qx
Opis:
High-pressure liquid chromatography - electrospray ionization-mass spectrometry coupled with the PDA detector was used for the analysis of secoisolariciresinol diglucoside in flaxseeds. The research was carried out using the spectrometer "Waters" on the BDS HYPERSIL column $C_{18}$ 250 × 4.6 mm, with the diode-array PDA 996 and the mass-detectors Micromass ZQ 2000 with the electrospray ionization. As a mobile phase acetonitrile and water with 0.1% formic acid were used. The content of secoisolariciresinol diglucoside in the flaxseeds of 12 cultivar was determined.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 834-836
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Composition of Surface Layers Prepared by Ion Beam Assisted Deposition of Catalytic Metals from Pulsed Arc-Discharge Plasma onto Carbon Paper Substrates
Autorzy:
Poplavsky, V.
Luhin, V.
Kołtunowicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1033219.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.37.Hk
81.15.Jj
81.05.U-
82.80.Yc
Opis:
The layers were prepared by ion beam assisted deposition of iridium and platinum onto AVCarb® Carbon Fiber Paper P50 electrocatalyst supports for the production of diffusion layers of the membrane-electrode assemblies of low temperature fuel cells with polymer electrolyte membrane. Formation of the layers in the ion beam assisted deposition mode, by means of the deposition of metal and mixing of precipitating layer with the substrate by the accelerated (U=10 kV) ions of the same metal, was performed. In this process neutral fraction of metal vapour and ionized plasma of vacuum pulsed electric arc discharge were used. The investigations of morphology and composition of layers were carried out by the scanning electron microscopy, energy dispersive X-ray microanalysis, wave dispersive X-ray fluorescence analysis, and the Rutherford backscattering spectrometry methods. It was established that the obtained catalytic layers contain atoms of the deposited metals and substrate material as well as impurity oxygen atoms. The surfaces contain also metal inclusions of several micrometer size which arise from the precipitation of deposited metal droplets from the arc discharge of an ion source. The content of iridium and platinum atoms in the layers is ≈2×10¹⁶ cm¯²; the concentration of the deposited metals equals about several atomic percent.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 295-298
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Current-Voltage Characteristic Features of Diodes Irradiated with 170~MeV Xenon Ions
Autorzy:
Poklonski, N.
Gorbachuk, N.
Nha, Vo
Tarasik, M.
Shpakovski, S.
Filipenia, V.
Skuratov, V.
Wieck, A.
Kołtunowicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1400481.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Jv
61.80.Fe
Opis:
Diodes manufactured on the wafers of single-crystalline silicon uniformly doped with phosphorus are studied. The wafer resistivity was 90 Ω cm. Xenon ions were implanted into the diodes from the side of the $p^{+}$-region (implantation energy 170 MeV, fluence Φp from $5 \times 10^7$ to $10^9 cm^{-2}$). It is shown that the formation of a continuous irradiation damaged layer with the thickness of the order of magnitude of the average projective range creates prerequisites for the negative differential resistance in the current-voltage characteristics of the irradiated diodes.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 926-928
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dielectric Properties of $(CoFeZr)_x(PZT)_{100-x}$ Nanocomposites Produced with a Beam of Argon and Oxygen Ions
Autorzy:
Koltunowicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1382101.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
62.23.Pq
79.20.Rf
81.40.Ef
72.80.Le
Opis:
In this paper it was established that nanocomposite $(FeCoZr)_x(PZT)_{100-x}$, with x=90.0 at.%, produced by ion sputtering with argon and oxygen beam remains under the percolation threshold. It is related to the compound structure of films and creation of coat consisting of metallic oxides on surface of metallic phase nanogranules, which prevents electric contact between nanoparticles. Verification of the Arrhenius dependences for capacity and conductivity demonstrates that dominant part of metallic phase nanogranules has metal oxide coatings. Only a small number of nanogranules (probably around a few percent) does not have oxide coating.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1412-1414
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effects of Fluences of Irradiation with 107 MeV Krypton Ions on the Recovery Charge of Silicon $p^{+}n$-Diodes
Autorzy:
Poklonski, N.
Gorbachuk, N.
Tarasik, M.
Shpakovski, S.
Filipenia, V.
Skuratov, V.
Wieck, A.
Kołtunowicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1503994.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Jv
61.80.Fe
Opis:
The diodes manufactured on the wafers of single-crystalline silicon uniformly doped with phosphorus are studied. The wafer resistivity was 90 Ω cm. Krypton ions are implanted to the side of the $p^{+}$-region of diodes (energy 107 MeV, fluence Φp from 5 × $10^7$ to 4 × $10^9 cm^{-2}$). It is shown that recovery charge $Q_{rr}$ is inversely proportional to the square root of the irradiation fluence value Φp. When the fluence increases, the part of the recovery charge Q_{rrA}, due to the high reverse conductance phase, decreases faster than the value $Q_{rr}$.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 111-114
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrochemically Deposited Cobalt Nanoarrays in $SiO_2//n-Si$ Templates Produced by Swift Heavy Ion-Induced Modification Technology
Autorzy:
Koltunowicz, T.
Zhukowski, P.
Fedotova, J.
Bayev, V.
Streltsov, E.
Baran, L.
Powiązania:
https://bibliotekanauki.pl/articles/1400482.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Pq
78.67.Rb
61.46.Km
75.30.Gw
Opis:
Nanoarrays of Co nanorods were formed by means of electrochemical deposition in the nanoporous $SiO_2//n-Si$ templates. Structure and magnetic properties at room temperatures were studied by means of atomic force and scanning electron microscopies, vibrating sample magnetometry. The presence of perpendicular magnetic anisotropy component at room temperature makes Co nanorods in the nanoporous $SiO_2//n-Si$ templates promising for nanoelectronic devices and biomedical applications.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 929-931
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation of Cone-Shaped Inclusions and Line Defects on the Cz-Si Wafer Surface by the Helium Implantation and DC Nitrogen Plasma Treatment
Autorzy:
Frantskevich, N.
Mazanik, A.
Frantskevich, A.
Kołtunowicz, T.
Żukowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1503982.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uf
73.20.Hb
Opis:
The general goal of this work is to investigate the defects formed on the surface of the Cz-Si wafers subjected to helium implantation, vacuum annealing and nitrogen plasma treatment. The performed scanning electron microscopy study has shown that in the general case two types of surface defects can be formed: cone-shaped inclusions with the base diameter of 0.2-2 μm and the ratio of diameter to height of approximately 1:1, as well as crystallographically oriented line defects with the length equal to 0.2-2 μm. The concentration of these defects depends on the conditions of implantation and plasma treatment.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 105-107
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation of Noncoil-Like Inductance in Nanocomposites $(Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1-x}$ Manufactured by Ion-Beam Sputtering of Complex Targets in $Ar+O_2$ Atmosphere
Autorzy:
Zhukowski, P.
Kołtunowicz, T.
Węgierek, P.
Fedotova, J.
Fedotov, A.
Larkin, A.
Powiązania:
https://bibliotekanauki.pl/articles/1503848.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
73.22.-f
81.40.Ef
84.37.+q
72.20.Ee
Opis:
This paper investigates the inductive contribution to AC conductance in the granular nanocomposites $(Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1-x}$. The initial nanocomposites studied were manufactured in $Ar+O_2$ atmosphere by ion-beam sputtering of the target containing $Fe_{0.45}Co_{0.45}Zr_{0.10}$ and alumina stripes and then subjected to the annealing procedure in air over the temperature range 373 K < $T_{a}$ < 873 K. These samples, before and after annealing, were studied using the temperature 77 K < $T_{p}$ < 300 K and frequency 50 Hz < f < 1 MHz dependences of a real part of the admittance σ(T, f). Analysis of the observed σ (f, $T_{p}$) dependences for x < 0.5 demonstrated that in the studied samples the equivalent circuits with the capacitive and noncoil-like inductive contributions can be accomplished. Just in this case, the capacitive properties of RLC circuit with the phase angle - 90° ≤ $\Theta_{L}$ < 0° are exhibited at low frequencies and the inductive properties with 0° ≤ $\Theta_{H}$ < 90° become apparent at high frequencies. A value of the critical frequency $f_{R}$, where $\Theta_{H}$ changes sign, depends on the metallic phase concentration x, measuring temperature $T_{p}$, and annealing temperature $T_{a}$.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 43-45
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hopping Conductance in Nanocomposites $(Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1 - x}$ Manufactured by Ion-Beam Sputtering of Complex Target in $Ar+O_2$ Ambient Gas
Autorzy:
Kołtunowicz, T.
Zhukowski, P.
Fedotova, V.
Saad, A.
Fedotov, A.
Powiązania:
https://bibliotekanauki.pl/articles/1503812.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.20.Rf
73.22.-f
84.37.+q
72.20.Ee
Opis:
We report the investigation of a real part of the admittance σ of granular nanocomposites $(Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1 - x}$ with 0.30 < x < 0.70 in the dielectric (hopping) regime. An analysis of the σ(T, f, x) dependences in the as-deposited and annealed films over the temperature 77 K < T < 300 K and frequency 50 < f < $10^6$ Hz ranges displayed the predominance of an activation (hopping) conductance mechanism with dσ/ dT > 0 for the samples below the percolation threshold $x_{C}$ ≈ 0.76 ± 0.05. Based on the earlier models for hopping AC conductance, computer simulation of the frequency coefficient $α_{f}$ of hopping conductance depending on the probability of jump p, frequency f, and also on the shape of σ(f) curve was performed. The experimental and simulation results revealed a good agreement.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 39-42
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Annealing on the Electrical Properties οf Cz-Si Wafers Previously Subjected to the Hydrogen Ion-Beam Treatment
Autorzy:
Fedotov, A.
Korolik, O.
Mazanik, A.
Kołtunowicz, T.
Żukowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1503985.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uf
81.40.Ef
Opis:
The main goal of this work is to establish the influence of annealing on the properties of Cz-Si wafers previously subjected to the hydrogen ion-beam treatment at 25 or 300-350°C. It is demonstrated by the conducted study that, despite similarity in the effects of the hydrogen ion-beam treatment at different temperatures on some electrical properties of the wafers (photovoltage spectra, thermoelectromotive force sign), thermal stability of changes in these properties due to the hydrogen ion-beam treatment depends on the hydrogenation temperature.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 108-110
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon Diodes
Autorzy:
Poklonski, N.
Gorbachuk, N.
Nha, Vo
Shpakovski, S.
Filipenya, V.
Skuratov, V.
Kołtunowicz, T.
Kukharchyk, N.
Becker, H.
Wieck, A.
Powiązania:
https://bibliotekanauki.pl/articles/1402222.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Jv
61.80.Fe
Opis:
Silicon diodes irradiated with helium ions with energies of 4.1, 6.8 and 8.9 MeV are studied. It is shown that the mechanism determining the behaviour of frequency dependence of complex electric module and correspondingly the behavior of impedance of diodes irradiated with helium ions in the frequency region 3-200 kHz is a recharging of vacancy complexes localized in the space charge region.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 891-893
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ion Irradiation of Oxidized FeCoZr-CaF₂ Nanocomposite Films for Perpendicular Magnetic Anisotropy Enhancement
Autorzy:
Kasiuk, J.
Fedotova, J.
Przewoźnik, J.
Kapusta, C.
Skuratov, V.
Svito, I.
Bondariev, V.
Kołtunowicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1030130.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Tt
75.30.Gw
81.15.Jj
81.40.Wx
81.40.Rs
61.80.Jh
Opis:
The paper is focused on the results of Xe ions irradiation of nanocomposite FeCoZr-CaF₂ films synthesized in the oxygen-containing atmosphere. Combined influence of nanoparticles partial oxidation and ion irradiation with different fluences on the crystalline structure, phase composition and magnetic anisotropy is analysed by X-ray diffraction, the Mössbauer spectroscopy and vibrating sample magnetometry. The origin of the detected progressive enhancement of perpendicular magnetic anisotropy as the result of films oxidation and irradiation is discussed in the context of formation of nanoparticles oxide shells and ion tracks along the films normal.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 206-209
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ion-Induced Modification of Structure and Magnetic Anisotropy in Granular FeCoZr-CaF₂ Nanocomposite Films
Autorzy:
Kasiuk, J.
Fedotova, J.
Przewoznik, J.
Kapusta, Cz.
Skuratov, V.
Milosavljevic, M.
Bondariev, V.
Koltunowicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1402191.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Tt
75.30.Gw
81.15.Jj
81.40.Wx
81.40.Rs
61.80.Jh
Opis:
The paper reports on the results of structural analysis and magnetometry of granular nanocomposite films FeCoZr-CaF₂ irradiated with Xe and Kr ions at different fluences. The observed effect of enhanced perpendicular magnetic anisotropy characterizing pristine films is discussed with respect to the irradiation regimes and structural changes of the films originating from the impact of ions.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 828-831
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 33

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