Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "Khrupa, V." wg kryterium: Autor

  Lista filtrów
Wyrównaj
    Wyświetlanie 1-10 z 10
    Tytuł:
    Structure Perfection Diagnostics of Single Crystals by Means of Diffractometry Measurements Using X-Ray Continuous Spectrum
    Autorzy:
    Datsenko, L. I.
    Khrupa, V. I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1931659.pdf
    Data publikacji:
    1994-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.66.Bi
    81.40.-z
    61.72.Dd
    Opis:
    Determination of the integral characteristics of structural perfection of a real crystal (i.e. Debye-Waller's static factor e$\text{}^{-L}$ and coefficient of absorption lids due to diffuse scattering) is especially expedient using the suitably selected wavelengths of the X-ray continuous spectrum by investigation of the thickness I(t), coordinate I(x) as well as amplitude I(W) dependencies of intensities at Lane or Bragg diffraction. Here W is an amplitude of weak ultrasound vibrations excited in a sample for suppression of the Bragg component of reflectivity.
    Źródło:
    Acta Physica Polonica A; 1994, 86, 4; 579-584
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structure Perfection Study of Crystals Containing Micro- and Macrodistortions by X-Ray Acoustic Method
    Autorzy:
    Khrupa, V. I.
    Grigoryev, D. O.
    Dzyublik, A. Ya.
    Powiązania:
    https://bibliotekanauki.pl/articles/1931662.pdf
    Data publikacji:
    1994-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.40.-z
    61.72.Dd
    Opis:
    The X-ray acoustic method for determination the structure perfection integral characteristics is suggested for slightly imperfect dislocation-free crystals. The method is suitable for investigation of a crystal disturbed both by localized (microdefects) and by distributed (macrostrains) structure defects. It is based on the analysis of dependence of the distance Δx between two minima, arising in the spatial intensity profile I(x) of the X-ray beam diffracted by acoustically excited crystal, upon ultrasound frequency vs. Using the data Δx(v$\text{}_{s}$) for two selected reflections, we calculated the values of the extinction lengths Λ which enabled us to identify the predominate type of structure disturbances as well as to estimate the static Debye-Waller factors e$\text{}^{-L}$ and the period of the main macrodeformation λ$\text{}_{M}$ for a sample containing simultaneously microdefects and periodic long range deformations. Such approach was used for studying the structure perfection of Czochralski-grown (Cz) and float-zone (FZ) silicon crystals.
    Źródło:
    Acta Physica Polonica A; 1994, 86, 4; 597-603
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    X-Ray Structure Perfection Diagnostics of Slightly Distorted Silicon Crystals in the Bragg Case of Diffraction
    Autorzy:
    Khrupa, V.
    Krasulya, S.
    Machulin, V.
    Datsenko, L.
    Auleytner, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1964151.pdf
    Data publikacji:
    1997-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.66.Bi
    81.40.-z
    Opis:
    A new approach to structure perfection diagnostics of dislocation-free silicon crystals has been developed using the Bragg case of diffraction. The approach is being based on successive measurements of integral reflectivity and the spatial intensity distribution of reflected beam on the same diffraction planes of a real crystal by means of a single crystal diffractometer.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 5; 981-985
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Integral Structure Perfection Diagnostics of Single Crystals Using Two Wavelengths of X-Ray Spectrum
    Autorzy:
    Datsenko, L.
    Krasulya, S.
    Machulin, V.
    Auleytner, J.
    Khrupa, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1964123.pdf
    Data publikacji:
    1997-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.40.-z
    61.10.-i
    Opis:
    A new approach to determination of microdefect structure parameters by means of single crystal diffractometer is proposed. The approach is based on the measurements of the integral reflectivity of a sample for two selected X-ray wavelengths providing with the approximations of thin and thick crystal, respectively.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 5; 935-938
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Dislocation Interactions with Impurities on their Topographical Images in Silicon Crystals
    Autorzy:
    Auleytner, J.
    Skorokhod, M. Ya.
    Datsenko, L. I.
    Khrupa, V. I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1945730.pdf
    Data publikacji:
    1996-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.10.-i
    61.72.Cc
    61.72.Ff
    81.40.Cd
    Opis:
    Silicon crystals contained copper atoms included by diffusion way during high temperature treatment have been investigated by means of X-ray transmission topography (Lang method). The studies allow us to observe the increase or decrease in the dislocation images widths in dependence on the time of diffusin annealing. In one case, during the more prolonged decoration process a build-up of decorating particles on dislocation occurs with widening of the topographic images of this dislocation. In another case (short time of decorating process) some compensation of defect deformation fields has been noticed (shortening of the mentioned images takes part). The obtained effects depend not only on the type of intrinsic impurities which take part in forming the Cottrell atmospheres but also on the duration of diffusion annealing. The observed results of interaction of dislocations with impurities have been confirmed by the studies of the integral reflectivity of decorated samples by means of the double-crystal spectrometer.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 3; 541-546
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Preannealing on Perfection of Czochralski Grown Silicon Crystals Subjected to High Pressure Treatment
    Autorzy:
    Datsenko, L. I.
    Misiuk, A.
    Härtwig, J.
    Briginets, A.
    Khrupa, V. I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1931660.pdf
    Data publikacji:
    1994-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.40.-z
    61.70.-r
    Opis:
    The effect of high temperature (up to 1120°C)-high pressure (up to 1.1 GPa) treatment on the resulting defect structure of preannealed (450-725°C, up to 96 hours) Czochralski grown Si crystals was studied by X-ray diffraction. The values of the Debye-Waller static factor and of the root-mean-square atomic displacement due to defects were determined for various Lane reflections. Well-defined development of the cluster like defect structure after high temperature pressurization depending to a substantial extent on the preannealing conditions was observed.
    Źródło:
    Acta Physica Polonica A; 1994, 86, 4; 585-590
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural Perfection of Czochralski Grown Silicon Crystals Annealed above 1500 K under Hydrostatic Pressure
    Autorzy:
    Datsenko, L.
    Khrupa, V.
    Krasulya, S.
    Misiuk, A.
    Härtwig, J.
    Surma, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1964116.pdf
    Data publikacji:
    1997-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.40.-z
    81.05.Cy
    Opis:
    The structural perfection of Czochralski grown silicon crystals annealed at 1580-1620 K under hydrostatic pressure up to 10$\text{}^{9}$ Pa was investigated by X-ray diffractometry and topography supplemented by the method of absorption of infrared rays. Such treatment suppresses dissolution of oxygen-related defects. From the static Debye-Waller factor dependence on the reflection order it was concluded that large clusters or dislocation loops are the dominant type of defects for most of the samples.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 5; 929-933
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigation of Near Surface Distortions in Si Single Crystals by Means of Spatial Distribution Analysis of Reflected Beams
    Autorzy:
    Khrupa, V. I.
    Krasulya, S. M.
    Machulin, V.
    Datsenko, L. I.
    Auleytner, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1945216.pdf
    Data publikacji:
    1996-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.40.-z
    61.10.-i
    Opis:
    A diffractometrical method for quantitative evaluation of structure perfection level in silicon single crystals containing various types of near surface distortions is described. The method is based on the spatial distribution analysis of the reflected intensity in the Bragg case of diffraction. To implement the proposed approach one has to satisfy the condition of the so-called low X-ray absorption because in this case the penetration depth of diffracted radiation exceeds the corresponding value of extinction length. It permits us to obtain a remarkable value of noncoherent reflectivity due to defects placed in deep (on the extension of absorption length) regions of a crystal and therefore, to increase the sensitivity of scattering for low distortions of crystal lattice. Using the method described here the extension of various disturbed layers as well as the level of the static Debye-Waller factor of a crystal can be determined. The effect of surface distortions caused by mechanical treatment and the influence of the following thermal annealing as well as irradiation by high energy protons on the defective structure of the samples were investigated.
    Źródło:
    Acta Physica Polonica A; 1996, 89, 3; 309-313
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    X-ray Diffraction Investigations of Structure of Silicon Single Crystals after Irradiation by Heavy Ions
    Autorzy:
    Auleytner, J.
    Khrupa, V. I.
    Datsenko, L. I.
    Krasulya, S. M.
    Skorokhod, M. J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1945213.pdf
    Data publikacji:
    1996-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.40.-z
    68.35.Bs
    Opis:
    Structure distortions appearing near the surfaces of crystals irradiated by high energy ions (H, Kr, U) accelerated till energy of several MeV using respectively the accelerator U-120 (Kiev, Ukraine), the heavy ions accelerators (Caen, France and Darmstadt, Germany) were investigated by means of various X-ray diffraction methods (topography and diffractometry). Nonhomogeneous distribution of lattice distortions near the surfaces of irradiated crystals were discovered using these methods in all of the samples. Besides the barrier zones where the accelerated ions stopped, the wide distorted regions situated nearer the surface were found. The fine structure of different zones, their extents as well as the level of static Debye-Waller factor were determined. The depth distribution of this factor was compared with the results obtained by using the edge contrast measurements some years ago. This permitted us to draw conclusions about some relaxation of elastic strains in the interference regions after many years.
    Źródło:
    Acta Physica Polonica A; 1996, 89, 3; 301-307
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Rapid Structure Perfection Diagnostics of GaAs Single Crystal by Diffraction of White X-Ray Radiation
    Autorzy:
    Khrupa, V. I.
    Grigoryev, D. O.
    Skorokhod, M. Ya.
    Datsenko, L. I.
    Bąk-Misiuk, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1931661.pdf
    Data publikacji:
    1994-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.40.-z
    61.70.-r
    Opis:
    Sensitivity of X-ray integral reflectivity of GaAs single crystal to a degree of structure distortions was established to grow considerably in the Bragg diffraction case when the characteristic AgK_{α$\text{}_{1}}$ line is changed for more hard white radiation. In effect, the absorption length essentially exceeds the extinction length what results in enhancement of incoherent scattering. Measurements of X-ray integral reflectivity coordinate dependence by single crystal spectrometer permitted to determine the mean level of crystal lattice distortion as well as the degree of structure homogeneity of a sample with dislocations. The Debye-Waller static factor value was estimated from X-ray integral reflectivity magnitudes for the 800 reflection of white radiation.
    Źródło:
    Acta Physica Polonica A; 1994, 86, 4; 591-596
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-10 z 10

      Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies