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Wyszukujesz frazę "Khomyak, V." wg kryterium: Autor

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    Wyświetlanie 1-7 z 7
    Tytuł:
    XPS and Raman Characterizations of $Zn_{1-x}Cd_{x}O$ Films Grown at the Different Growth Conditions
    Autorzy:
    Shtepliuk, I.
    Khyzhun, O.
    Lashkarev, G.
    Khomyak, V.
    Lazorenko, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1403642.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Et
    78.67.Bf
    Opis:
    X-ray photoelectron spectroscopy was employed to characterize the surface chemistry and electronic properties of the $Zn_{1-x}Cd_{x}O$ semiconductor systems obtained at the different growth conditions. The effect of the growth conditions on the core and valence band spectra as well as room-temperature photoluminescence of the $Zn_{1-x}Cd_{x}O$ films was investigated and discussed. Behavior of the X-ray photoelectron spectroscopy peaks indicated an increase of the cadmium and a depletion of the oxygen concentrations upon changing the Ar/$O_2$ gas ratio and dc power.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 1034-1038
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Se Isoelectronic Impurity on the Luminescence Features of the ZnO
    Autorzy:
    Khomyak, V.
    Slyotov, M.
    Shtepliuk, I.
    Slyotov, O.
    Kosolovskiy, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1403644.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Et
    78.67.Bf
    81.05.Dz
    81.07.Bc
    Opis:
    Se-doped ZnO films have been deposited on the sapphire substrates by the radio-frequency magnetron sputtering technique. An influence of the isoelectronic impurity Se on the room-temperature luminescence of the ZnO films is studied. It is revealed that the Se doping leads to an appearance of the intense near-band edge emission spectrum, which consists of three emission bands. The dominant emission band is related to the recombination of the bound excitons. The radiation caused by the band-to-band transitions of free carriers is observed in the high-energy side of the spectrum (ħω > $E_{g}$).
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 1039-1041
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication and Characterization of Photosensitive n-CdO/p-InSe Heterojunctions
    Autorzy:
    Kudrynskyi, Z.
    Kovalyuk, Z.
    Katerynchuk, V.
    Khomyak, V.
    Orletsky, I.
    Netyaga, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399305.pdf
    Data publikacji:
    2013-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Lq
    73.40.Gk
    68.35.B-
    72.20.Jv
    Opis:
    Photosensitive n-CdO/p-InSe heterojunctions were developed and studied for the first time. The heterojunctions were fabricated by dc reactive magnetron sputtering of CdO thin films onto the freshly cleaved p-InSe single-crystal substrates (0 0 1). Surface morphology of the obtained films was studied by means of atomic force microscopy. From the X-ray diffraction result it is shown that the CdO film is polycrystalline with cubic structure. The mechanisms of current transport through the space-charge region under forward and back biases were established by investigation of temperature dependences of the I-V characteristics. The main photoelectric parameters and the photosensitivity spectra were measured at room temperature.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 4; 720-723
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication and Properties of the Photosensitive Anisotype $n-Cd_{x}Zn_{1-x}O$/p-CdTe Heterojunctions
    Autorzy:
    Khomyak, V.
    Brus, V.
    Ilashchuk, M.
    Orletsky, I.
    Shtepliuk, I.
    Lashkarev, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1376075.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.40.+w
    73.40.Lq
    81.15.Lm
    Opis:
    We have fabricated photosensitive anisotype $n-Cd_{x}Zn_{1-x}O$/p-CdTe heterojunctions by a deposition of $Cd_{0.5}Zn_{0.5}O$ film onto freshly-cleaved CdTe monocrystalline wafers using a radiofrequency magnetron reactive sputtering of a zinc-cadmium alloy target. Fundamental electrical properties of the heterojunctions were studied. Dominant mechanisms of a current transport were found. $n-Cd_{x}Zn_{1-x}O$/p-CdTe heterojunctions were photosensitive and were able to operate both in photovoltaic and photodiode modes.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1163-1166
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Enhancement of the Ultraviolet Luminescence Intensity from Cd-Doped ZnO Films Caused by Exciton Binding
    Autorzy:
    Shtepliuk, I.
    Lashkarev, G.
    Khyzhun, O.
    Kowalski, B.
    Reszka, A.
    Khomyak, V.
    Lazorenko, V.
    Timofeeva, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492932.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Et
    78.67.Bf
    81.05.Dz
    81.07.Bc
    Opis:
    ZnO films doped with the cadmium (0.4-0.6%) were grown on crystalline sapphire $c-Al_2O_3$ substrates applying radiofrequency magnetron sputtering at the temperature of 400°C in $Ar-O_2$ atmosphere. The as-grown films were investigated in detail using X-ray diffraction, X-ray photoelectron spectroscopy, and cathodoluminescence spectra. The X-ray diffraction analysis revealed that the films possess a hexagonal wurtzite-type structure with the dominant crystallite orientation along the c axis. It was found that the small concentration of the cadmium significantly enhances the ultraviolet emission associated with excitonic transitions. We suggest that this enhancement effect mainly results from appearance of the cadmium isoelectronic traps, which may bind an exciton, thereby increasing the probability of radiation recombination. The effect of Cd isoelectronic impurity on structural and luminescent properties of ZnO films is discussed.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 914-917
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effects of $Ar//O_2$ Gas Ratio on the Properties of the $Zn_{0.9}Cd_{0.1}O$ Films Prepared by DC Reactive Magnetron Sputtering
    Autorzy:
    Shtepliuk, I.
    Lashkarev, G.
    Khomyak, V.
    Marianchuk, P.
    Koreniuk, P.
    Myroniuk, D.
    Lazorenko, V.
    Timofeeva, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492665.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Et
    78.67.Bf
    Opis:
    $Zn_{0.9}Cd_{0.1}O$ ternary alloys have been grown on the sapphire substrates by using the direct current (dc) magnetron sputtering. X-ray diffraction measurements showed that all samples were highly oriented films along the c-axis perpendicular to the substrate surface. X-ray diffraction confirmed that the crystal quality of $Zn_{0.9}Cd_{0.1}O$ films can be controlled by changing the gas ratio of $Ar//O_2$. The optical properties of these films have been investigated by means of the optical transmittance and the low-temperature photoluminescence spectra. It was found that the optical band gap of the deposited films can be tuned by growth parameters. The luminescence processes are considered in the terms of alloy fluctuation.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-061-A-065
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of High Energy Electron Irradiation on Structure and Optical Properties of ZnO Films
    Autorzy:
    Myroniuk, D.
    Lashkarev, G.
    Shtepliuk, I.
    Lazorenko, V.
    Maslyuk, V.
    Timofeeva, I.
    Romaniuk, A.
    Strelchuk, V.
    Kolomys, O.
    Khomyak, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399153.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.-x
    78.55.Et
    71.55.Gs
    Opis:
    Zinc oxide films were grown on sapphire substrates by direct current magnetron sputtering and irradiated by electrons with energy 10 MeV and fluences $10^{16}$ and $2 \times 10^{16} cm^{-2}$. As-grown and irradiated samples were investigated by X-ray diffraction and photoluminescence spectroscopy. It was found that radiation causes the appearance of complex defects, reducing the size of coherent scattering regions and the increase of the defect PL band.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 891-894
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-7 z 7

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