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Wyświetlanie 1-15 z 31
Tytuł:
Magnetic and structural studies of GeMnSnTe epitaxial layers
Autorzy:
Grochot, A.
Knoff, W.
Taliashvili, B.
Wołkanowicz, W.
Minikayev, R.
Pieniążek, A.
Łusakowska, E.
Sawicki, M.
Jantsch, W.
Story, T.
Przybylińska, H.
Powiązania:
https://bibliotekanauki.pl/articles/1055147.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.30.Gw
75.50.Pp
76.50.+g
Opis:
MBE grown Ge_{1-x-y}Mn_xSn_yTe layers with Mn content ranging from 10 to 30% and Sn content ranging from 2 to 5% have been characterized with X-ray diffraction, energy-dispersive X-Ray spectroscopy, atomic force microscopy, SQUID magnetometry, and ferromagnetic resonance. All layers (except the one with the highest Mn and Sn content) were found to be single phase rhombohedral, with the distortion axis perpendicular to the layer surface, and ferromagnetic. Ferromagnetic resonance studies have shown that co-doping with a few percent of tin makes the lattice more rigid and changes considerably the magnetocrystalline anisotropy, from purely uniaxial in GeMnTe to distorted cubic in Ge_{1-x-y}Mn_xSn_yTe at the same Mn content.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 340-342
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Limitations in the Tunability of the Spin Resonance of 2D Electrons in Si by an Electric Current
Autorzy:
Wilamowski, Z.
Malissa, H.
Glazov, M.
Jantsch, W.
Powiązania:
https://bibliotekanauki.pl/articles/2047703.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.75.-d
73.63.Hs
75.75.+a
76.30.-v
Opis:
We analyse the recently observed effect of an in-plane electric current through a Si quantum well on the conduction electron spin resonance. We find that the ratio of resonance shift and current density is independent of temperature and dissipation processes, but the channel current is reduced due to a parallel electric channel in heavily modulation doped samples. The inhomogeneous current distribution results in some broadening of the ESR line width. In high mobility Si/SiGe layers the current induced increase in the electron temperature is considerably larger than the increase in the lattice temperature. The signal amplitude scales with the square of electron mobility.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 375-379
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spin Resonance Absorption in a 2D Electron Gas
Autorzy:
Ungier, W.
Jantsch, W.
Wilamowski, Z.
Powiązania:
https://bibliotekanauki.pl/articles/2047694.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.75.-d
73.63.Hs
75.75.+a
76.30.-v
Opis:
We analyze the power absorption at electron spin resonance excited by the Bychkov-Rashba spin-orbit field in a 2D electron gas. We show that, as long as the absorbed power is dissipated by the usual spin lattice relaxation mechanisms, the resonance line shape is expected to be of pure absorption type, i.e., it can be described by the imaginary part of the dynamic magnetic susceptibility. Therefore, the Dysonian line shape observed in ESR of 2D electron gas cannot result from this type of the resonance signal.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 345-350
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Bychkov-Rashba Effect and g-Factor Tuning in Modulation Doped SiGe Quantum Wells
Autorzy:
Malissa, H.
Jantsch, W.
Mühlberger, M.
Schäffler, F.
Wilamowski, Z.
Draxler, M.
Bauer, P.
Powiązania:
https://bibliotekanauki.pl/articles/2038126.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.Fg
85.75.-d
Opis:
We investigate the spin resonance of electrons in one-sided modulation doped Si$\text{}_{1-x}$Ge$\text{}_{x}$ (x=0-10%)) quantum wells defined by Si$\text{}_{0.75}$Ge$\text{}_{0.25}$ barriers. In such structures, the Bychkov-Rashba effect induces an effective magnetic field in the quantum well layer which causes anisotropy of both the g-factor and the spin coherence time. Evaluation of the Rashba coefficient as a function of x yields a monotonic increase. For x=5% the shift in the resonance field exceeds the ESR linewidth already, demonstrating the possibility to use this effect for g-factor tuning to select individual spins in an ensemble.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 585-590
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrically Detected Magnetic Resonance
Autorzy:
Fedorych, O. M.
Wilamowski, Z.
Jantsch, W.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/2038127.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
76.30.Pk
72.25.Rb
73.21.Fg
Opis:
We compare the results of electrically detected magnetic resonance in a 2D electron gas in Si/SiGe quantum wells with transport and magnetic resonance measurements on ferromagnetic Ga$\text{}_{1-x}$Mn$\text{}_{x}$As. The results lead us to the conclusion that observation of electrically detected magnetic resonance is possible only in the case of a slow spin relaxation, where the microwave resonant absorption leads to a noticeable change of spin magnetization.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 591-598
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dyakonov--Perel Spin Relaxation Suppressed by an Applied Magnetic Field
Autorzy:
Wilamowski, Z.
Jantsch, W.
Powiązania:
https://bibliotekanauki.pl/articles/2036865.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.25.Rb
73.21.Fg
85.75.-d
Opis:
We observe a strong anisotropy of spin relaxation and a decrease in the spin relaxation rate with increasing electron mobility in contrast to predictions of the classical D'yakonov-Perel spin relaxation model. We show that for high electron mobility the cyclotron motion causes an additional modulation of spin-orbit coupling, leading to an effective suppression of the spin relaxation rate.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 671-674
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnesium Acceptor Energy Levels in Cubic GaN
Autorzy:
Przybylińska, H.
Buczko, R.
Kocher, G.
Jantsch, W.
Powiązania:
https://bibliotekanauki.pl/articles/2036869.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.-j
71.55.-i
71.55.Eq
Opis:
Intra-impurity transitions of the Mg acceptor in cubic phase GaN were measured with the use of photothermal ionization spectroscopy. Apart from the photoionization band several sharp features were detected, related to internal Mg-acceptor transitions. The transitions were identified with the help of effective-mass model calculations involving light- and heavy-hole as well as spin--orbit split-off bands. Transitions to resonant states, associated with the spin-orbit split-off valence band, were also identified. The determined hole binding energy of the Mg acceptor in zinc-blende GaN is 236±1 meV.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 683-688
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoluminescence of Er$\text{}^{3+}$ near 1.54μm in Silicon-Rich Silicon Oxide Films
Autorzy:
Kuritsyn, D.
Glukchanyuk, V.
Przybylińska, H.
Kozanecki, A.
Jantsch, W.
Powiązania:
https://bibliotekanauki.pl/articles/2028779.pdf
Data publikacji:
2001-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Ww
78.55.Hx
Opis:
Excitation of the intra-4f-shell luminescence near 1.5μm in silicon-rich silicon oxide is studied. Silicon-rich silicon oxide was produced by high dose implantation of Si$\text{}^{+}$ ions into SiO$\text{}_{2}$ layers grown on silicon. Erbium doping was also performed using implantation of Er^+ ions at an energy of 800 keV. An evidence is presented that transfer of energy from defects related to excess silicon in silica is the dominant mechanism of excitation of Er$\text{}^{3+}$ for optical pumping in the UV-blue wavelength range. Si-nanocrystals created by annealing at 1100ºC rather compete for excitation with erbium than transfer energy to Er$\text{}^{3+}$.
Źródło:
Acta Physica Polonica A; 2001, 100, 3; 437-442
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optically Active Si:Er Layers Grown by the Sublimation MBE Method
Autorzy:
Stepikhova, M.
Andreev, A.
Andreev, B.
Krasil'nik, Z.
Shmagin, V.
Kuznetsov, V.
Rubtsova, R.
Jantsch, W.
Ellmer, H.
Palmetshofer, L.
Preier, H.
Karpov, Yu.
Piplits, K.
Hutter, H.
Powiązania:
https://bibliotekanauki.pl/articles/1992203.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Hi
Opis:
We report the first application of sublimation molecular beam epitaxy to grow uniformly and selectively doped Si:Er layers with Er concentration up to 5×10$\text{}^{18}$ cm$\text{}^{-3}$. The Hall concentration of electrons is about 10% of total Er contents. The mobility is 300-400 cm$\text{}^{2}$ V$\text{}^{-1}$ s$\text{}^{-1}$ at 300 K. All samples exhibit photoluminescence at 1.537 μm up to 100-140 K.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 549-554
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Reflectivity Studies of Lattice Vibrations and Free Electrons in MBE Grown GaN Epitaxial Layers
Autorzy:
Iller, A.
Jantsch, W.
Marks, J.
Pastuszka, B.
Diduszko, R.
Powiązania:
https://bibliotekanauki.pl/articles/1969092.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
63.20.-e
78.66.Fd
Opis:
We have observed a sharp structure with a peak at the frequency of the E$\text{}_{1}$-TO phonon in the reflectivity of GaN epitaxial layers grown by molecular beam epitaxy on Si substrates. The simulations of the reflection performed show that the observed shape can be explained by assuming both collective lattice vibrations and free carriers contributions to the dielectric function. We assumed the Lorentz oscillator to describe the contribution of the collective lattice vibrations and the Drude-Lorentz model for that of free carriers. Fitting the calculated reflectivity to the spectrum obtained experimentally allowed us to evaluate lattice and free carrier parameters.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 336-340
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Infrared Luminescence in Er and Er+O Implanted 6H SiC
Autorzy:
Kozanecki, A.
Jantsch, W.
Heis, W.
Prechtl, G.
Sealy, B. J.
Jeynes, C.
Powiązania:
https://bibliotekanauki.pl/articles/1968292.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Ww
71.55.-i
78.55.-m
Opis:
Photoluminescence in the neighbourhood of 1.54 μm due to the $\text{}^{4}$I$\text{}_{13}\text{}_{/}\text{}_{2}$ -$\text{}^{4}$I$\text{}_{15}\text{}_{/}\text{}_{2}$ intra-4f-shell transitions of Er$\text{}^{3+}$ ions in 6H SiC is studied. Effects of oxygen coimplantation is also investigated. No difference in the photoluminescence spectra of Er only and Er+O implanted SiC was found. It is concluded that the emission around 1.54 μm in SiC:Er originates from erbium-oxygen complexes, which are formed as a result of thermal annealing.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 879-882
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Localized Spin Relaxation Due To Coupling To Effective Mass States
Autorzy:
Wilamowski, Z.
Dmochowski, J. E.
Jantsch, W.
Powiązania:
https://bibliotekanauki.pl/articles/1968446.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.10.Jm
75.50.-y
Opis:
The EPR of residual Mn in CdF$\text{}_{2}$ doped with Y, In and Ga is investigated. Although these donors are barely seen in EPR, they manifest themselves by a new effect: a drastic resonant reduction in the longitudinal relaxation rate of Mn which occurs only if the Zeeman splitting of the two subsystems coincide. In this situation, the saturation of those of the six Mn hyperfine lines is weakened which coincide with the shallow donor resonance.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 1055-1058
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Oscillating Antiferromagnetism of Ultrathin EuTe Layers
Autorzy:
Wilamowski, Z.
Springholz, G.
Svrcek, V.
Jantsch, W.
Powiązania:
https://bibliotekanauki.pl/articles/1968444.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
75.50.Ee
76.50.+g
Opis:
We study magnetic resonance on EuTe/PbTe superlattices. Analysis of the magnetic dipole anisotropy in the superlattices and of the EPR amplitude of isolated Eu ions in the PbTe wells shows that the diffusion at interfaces is very small. The real thickness of EuTe can be evaluated with an accuracy better than one monolayer. Since for EuTe layers thicker than 2 monolayers there is no difference in the character of the antiferromagnetic resonance observed for even and odd numbers of monolayers, we conclude that there is no static magnetization of the antiferromagnetic sublattices. Nevertheless, long range antiferromagnetic order is clearly evident.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 1051-1054
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Quantum Phenomena in Small Antiferromagnets
Autorzy:
Wilamowski, Z.
Buczko, R.
Jantsch, W.
Powiązania:
https://bibliotekanauki.pl/articles/1964697.pdf
Data publikacji:
1997-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.10.Jm
75.50.-y
Opis:
We show that the most characteristic properties of mesoscopic antiferromagnets can be explained in terms of the response on a spatially inhomogeneous perturbation. This concept allows to explain the dynamic properties (quantum resonance, coherence and tunnelling rates) as well as static perturbations which, for increasing size of an antiferromagnet, leads to a transition from the quantum mechanical oscillating system to a classical antiferromagnet with well defined Néel vectors.
Źródło:
Acta Physica Polonica A; 1997, 92, 2; 379-382
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Erbium in Silicon: Possible Light Source for 1.5 μm and Challenge for Defect Physics
Autorzy:
Jantsch, W.
Przybylińska, H.
Powiązania:
https://bibliotekanauki.pl/articles/1946605.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Hx
Opis:
The trivalent erbium ion emits at 1.54 μm, independent of the host crystal and temperature. This fact makes Si:Er an interesting candidate for integrated optics in the optimum wavelength regime for fiber optic communication systems. Recent progress in improving the luminescence yield is reviewed and the limiting factors are discussed, namely: the low solubility of different Er centers, thermal quenching of the luminescence above 100 K, the mechanisms for energy transfer from the host crystal to the Er 4f shell and the process induced parasitic recombination channels.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 623-633
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 31

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