Autor: Jakubowski, L. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: An impact of frequency on capacitances of partially-depleted SOI MOSFETs
Autorzy:: Tomaszewski, D.
Łukasik, L.
Zaręba, A.
Jakubowski, A.
Powiązania:: https://bibliotekanauki.pl/articles/309325.pdf
Data publikacji:: 2000
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: SOI MOSFET
small-signal models
non-quasi-static analysis
admittances
Opis:: A non-quasi-static model of partially-depleted SOI MOSFETs is presented. Phenomena, which are particularly responsible for dependence of device admittances on frequency are briefly described. Several C-V characteristics of the SOI MOSFET calculated for a wide range of frequencies, preliminary results of numerical analysis and of measurements and brief analysis of the results are presented. Methods of model improvement are proposed.
Źródło:: Journal of Telecommunications and Information Technology; 2000, 3-4; 67-71
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Characterization of SOI fabrication process using gated-diode measurements and TEM studies
Autorzy:: Gibki, J.
Kątcki, J.
Ratajczak, J.
Łukasik, L.
Jakubowski, A.
Tomaszewski, D.
Powiązania:: https://bibliotekanauki.pl/articles/309219.pdf
Data publikacji:: 2000
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: microelectronics
SOI technology
characterization
Opis:: SOI fabrication process was characterized using electrical and TEM methods. The investigated SOI structures included partially and fully depleted capacitors, gated diodes and transistors fabricated on SIMOX substrates. From C-V and I-V measurements of gated diodes, the following parameters of partially depleted structures were determined: doping concentration in both n- and p-type regions, average carrier generation lifetimes in the region under the gate and generation velocity at top and bottom surfaces of the active layer. Structures with short lifetime were studied using a transmission electron microscope. TEM studies indicate that the quality of the active layer in the investigated structures is good. Moreover, these studies were used to verify the thicknesses determined by means of electrical characterization methods.
Źródło:: Journal of Telecommunications and Information Technology; 2000, 3-4; 81-83
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: A model of partially-depleted SOI MOSFETs in the subthreshold range
Autorzy:: Tomaszewski, D.
Łukasiak, L.
Jakubowski, A.
Domański, K.
Powiązania:: https://bibliotekanauki.pl/articles/308425.pdf
Data publikacji:: 2001
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: SOI MOSFET
subthreshold range
floating body
transconductance
Opis:: A steady-state model of partially-depleted (PD) SOI MOSFETs I-V characteristics in subthreshold range is presented. Phenomena, which must be accounted for in current continuity equation, which is a key equation of the PD SOI MOSFETs model are summarized. A model of diffusion-based conduction in a weakly-inverted channel is described. This model takes into account channel length modulation, drift of carriers in the "pinch-off" region and avalanche multiplication triggered by these carriers. Characteristics of the presented model are shown and briefly discussed.
Źródło:: Journal of Telecommunications and Information Technology; 2001, 1; 61-64
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: An impact of physical phenomena on admittances of partially-depleted SOI MOSFETs
Autorzy:: Tomaszewski, D.
Łukasiak, L.
Gibki, J.
Jakubowski, A.
Powiązania:: https://bibliotekanauki.pl/articles/308410.pdf
Data publikacji:: 2001
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: SOI MOSFET
floating body
avalanche ionization
recombination
displacement current
admittance
Opis:: An influence of the selected physical phenomena: impact ionization in silicon and time variation of internal electric field distribution in partially-depleted (PD) SOI MOSFETs on several C-V characteristics of these devices is presented. The role of avalanche multiplication in the so-called "pinch-off" region is discussed in a more detailed way. The analysis is done using a numerical solver of drift-diffusion equations in silicon devices and using an analytical model of the PD SOI MOSFETs. The calculations results exhibit the significance of proper modelling of the phenomena in the floating body area of these devices.
Źródło:: Journal of Telecommunications and Information Technology; 2001, 1; 57-60
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Challenges in ultrathin oxide layers formation
Autorzy:: Beck, R.B.
Jakubowski, A.
Łukasiak, L.
Korwin-Pawłowski, M.
Powiązania:: https://bibliotekanauki.pl/articles/307646.pdf
Data publikacji:: 2001
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: silicon technology
oxidation
PECVD
RTO
gate oxide
ultrathin
layers
Opis:: In near future silicon technology cannot do without ultrathin oxides, as it becomes clear from the "Roadmap'2000". Formation, however, of such layers, creates a lot of technical and technological problems. The aim of this paper is to present the technological methods, that potentially can be used for formation of ultrathin oxide layers for next generations ICs. The methods are briefly described and their pros and cons are discussed.
Źródło:: Journal of Telecommunications and Information Technology; 2001, 1; 27-34
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 6.

Tytuł:: Studies of Plasma-Focus discharges within the PF-360 facility equipped with a planar D2O-ice target
Autorzy:: Zebrowski, J.
Baranowski, J.
Jakubowski, L.
Sadowski, M.
Powiązania:: https://bibliotekanauki.pl/articles/147057.pdf
Data publikacji:: 2001
Wydawca:: Instytut Chemii i Techniki Jądrowej
Tematy:: cryogenic target
ion beams
neutron yield
plasma focus
X-rays
Opis:: The paper reports on investigations of dense magnetized plasmas produced within a modernized PF-360 facility, which was operated with an additional planar cryogenic target placed in the front of the electrode outlet and covered with D2O-ice layers. The main aim of these studies was to overcome the neutron saturation effect and to increase the maximum neutron yield from PF discharges by using fast deuteron beams. Such beams are usually emitted from a pinch region and can produce fast neutrons from D-D reactions during their interactions with the additional target.
Źródło:: Nukleonika; 2001, 46, suppl. 1; 65-68
0029-5922
1508-5791
Pojawia się w:: Nukleonika
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 7.

Tytuł:: Studies of Plasma-Focus discharges within the PF-360 facility equipped with needle D2O-ice target
Autorzy:: Baranowski, J.
Jakubowski, L.
Sadowski, M.
Zebrowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/147583.pdf
Data publikacji:: 2001
Wydawca:: Instytut Chemii i Techniki Jądrowej
Tematy:: cryogenic target
current sheath
neutrons yield
plasma focus
X-ray
Opis:: The paper describes a new technique which has been investigated in order to overcome the neutron saturation effect and to increase the neutron yield from the plasma-focus (PF) discharges [1]. The PF-360 experimental facility was constructed at the Andrzej Soltan Institute for Nuclear Studies (IPJ) in Swierk, Poland in the late 70s [4, 5]. Recently in order to improve the neutron yield from the PF-360 machine, it was proposed to use a cryogenic deuterium target, which might be placed within the plasma-focus region. For this purpose, we have been made a needle-like cryogenic target covered with a thin „heavy-ice“ layer. A considerable increase in the average neutron yield (from 1.7×1010 to about 2.2×1010 neutrons/shot) has been achieved for 122 kJ PF discharges when the needle target top was placed at a distance of about 100 mm from the electrode ends.
Źródło:: Nukleonika; 2001, 46, suppl. 1; 69-71
0029-5922
1508-5791
Pojawia się w:: Nukleonika
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 8.

Tytuł:: Modeling SiGe-base HBT using APSYS 2000 - a 2D simulator
Autorzy:: Linkowski, A.
Łukasiak, L.
Jakubowski, A.
Powiązania:: https://bibliotekanauki.pl/articles/308023.pdf
Data publikacji:: 2004
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: base transit time
cut-off frequency
HBT
SiGe-base
Opis:: The paper is devoted to optimization of SiGe-base HBT with respect to operation speed by means of numerical simulation. The influence of design parameters on f(T) is studied.
Źródło:: Journal of Telecommunications and Information Technology; 2004, 1; 36-38
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 9.

Tytuł:: Silicon microelectronics: where we have come from and where we are heading
Autorzy:: Łukasiak, L.
Jakubowski, A.
Pióro, Z.
Powiązania:: https://bibliotekanauki.pl/articles/308029.pdf
Data publikacji:: 2004
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: MOSFET
scaling
SiGe
SOI
Opis:: The paper briefly presents the history of microelectronics and the limitations of its further progress, as well as possible solutions. The discussion includes the consequences of the reduction of gate-stack capacitance and difficulties associated with supply-voltage scaling, minimization of parasitic resistance, increased channel doping and small size. Novel device architectures (e.g. SON, double-gate transistor) and the advantages of silicon-germanium are considered, too.
Źródło:: Journal of Telecommunications and Information Technology; 2004, 1; 7-14
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 10.

Tytuł:: Standardization of the compact model coding: non-fully depleted SOI MOSFET example
Autorzy:: Grabiński, W.
Tomaszewski, D.
Lemaitre, L.
Jakubowski, A.
Powiązania:: https://bibliotekanauki.pl/articles/308862.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: Verilog-AMS
compact model coding
SOI MOSFET
Opis:: The initiative to standardize compact (SPICE-like) modelling has recently gained momentum in the semiconductor industry. Some of the important issues of the compact modelling must be addressed, such as accuracy, testing, availability, version control, verification and validation. Most compact models developed in the past did not account for these key issues which are of highest importance when introducing a new compact model to the semiconductor industry in particular going beyond the ITRS roadmap technological 100 nm node. An important application for non-fully depleted SOI technology is high performance microprocessors, other high speed logic chips, as well as analogue RF circuits. The IC design process requires a compact model that describes in detail the electrical characteristics of SOI MOSFET transistors. In this paper a non-fully depleted SOI MOSFET model and its Verilog-AMS description will be presented.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 135-141
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 11.

Tytuł:: Miejsce przewozów intermodalnych w systemie transportowym
Significance of intermodal services in transport system
Autorzy:: Jakubowski, L.
Powiązania:: https://bibliotekanauki.pl/articles/215516.pdf
Data publikacji:: 2006
Wydawca:: Instytut Kolejnictwa
Opis:: W artykule przedstawiono krótką charakterystykę poszczególnych systemów transportowych, ich oddziaływanie na środowisko i otoczenie, z podkreśleniem zalet transportu intermodalnego w stosunku do transportu drogowego. Uzasadniono potrzebę intensywniejszego wdrażania przewozów kombinowanych oraz podano zestaw wybranych terminów i ich definicje, zalecane do powszechnego stosowania.
A brief characteristic of different transport systems and their impact on emdronment arę pre-sented. Advantages of intermodal transport in comparison to road transport arę pointed out. Justification for intense implementation of combined transport services and set of selected terms and their definitions recommended for common use are given.
Źródło:: Problemy Kolejnictwa; 2006, 142; 28-36
0552-2145
2544-9451
Pojawia się w:: Problemy Kolejnictwa
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 12.

Tytuł:: Arbitrary waveform generator for charge-pumping
Autorzy:: Iwanowicz, M.
Pióro, Z.
Łukasiak, L.
Jakubowski, A.
Powiązania:: https://bibliotekanauki.pl/articles/308629.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: arbitrary waveform generator,
calibration
charge-pumping
digital synthesis
noise
Opis:: The paper presents a new signal generator for charge-pumping. Modular structure of the generator is discussed with special emphasis on signal-generation module consisting of five independent signal channels. Digital signal synthesis is chosen to minimize inaccuracies. Noise analysis is performed to demonstrate the validity of the design of signal channel. Calibration procedure is also discussed.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 3; 78-83
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 13.

Tytuł:: Comparison of 4H-SiC and 6H-SiC MOSFET I-V characteristics simulated with Silvaco Atlas and Crosslight Apsys
Autorzy:: Stęszewski, J.
Jakubowski, A.
Korwin-Pawlowski, M. L.
Powiązania:: https://bibliotekanauki.pl/articles/308627.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: silicon carbide
SiC MOSFET
4H-SiC
6H-SiC
Crosslight Apsys
Silvaco Atlas
Opis:: A set of physical models describing silicon carbide with fitting parameters is proposed. The theoretical I-V output and transfer characteristics and parameters of MOS transistors were calculated using Silvaco Atlas and Crosslight Apsys semiconductor device simulation environments.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 3; 93-95
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 14.

Tytuł:: Modeling of the inverse base width modulation effect in HBT transistor with graded SiGe base
Autorzy:: Zaręba, A.
Łukasiak, L.
Jakubowski, A.
Powiązania:: https://bibliotekanauki.pl/articles/308625.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: heterojunction bipolar transistor
SiGe
base width modulation
Opis:: A model of the position of the edge of emitter-base junction in the base and collector current pre-exponential ideality factor in HBT transistor with a SiGe base is presented. The model is valid for transistors with nonuniform profiles of doping and Ge content. The importance of taking into account the dependence of the effective density of states in SiGe on local Ge content and that of electron diffusion coefficient in SiGe on drift field for modeling accuracy is studied.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 3; 88-92
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 15.

Tytuł:: Influence of cathodic-protection-induced hydrogenation on mechanical properties of two ship hull plate steels
Autorzy:: Jakubowski, M.
Modelski, Ł.
Podbereski, M.
Powiązania:: https://bibliotekanauki.pl/articles/258556.pdf
Data publikacji:: 2008
Wydawca:: Politechnika Gdańska. Wydział Inżynierii Mechanicznej i Okrętownictwa
Tematy:: ship steels
hydrogenation
Charpy-V impact test
tensile testing
Opis:: Tensile testing and Charpy V impact testing results for two ship hull steels: an ordinary strength steel grade A and a higher strength steel grade AH32 each in both as-received conditions and in hydrogenated by zinc protector in salt water conditions. For both steels the hydrogenation has slightly increased yield stress (Re) and elongation (A) and has not influenced ultimate tensile strength (Rm), while reduction of area has been unchanged (A steel) or even decreased (AH32 steel) due to the hydrogenation. The effect of the hydrogenation on Charpy tests results has evidently been beneficial: the increase of Charpy energy and of percent fibrosity (ductility) of fracture appearance as well as a shift down of ductile-brittle transition temperatures have been observed. It seems that the present practice to evaluate the mechanical properties of ship steels by testing the specimens without hydrogenation leads to conservative results. The Authors have hypothesized that the beneficial effect of hydrogenation can occur if the deformation rate is fast enough, the notch is sharp enough (although only for specimens hydrogenated in unstressed conditions) and hydrogen concentration is moderate.
Źródło:: Polish Maritime Research; 2008, 1; 65-71
1233-2585
Pojawia się w:: Polish Maritime Research
Dostawca treści:: Biblioteka Nauki

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