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    Wyświetlanie 1-15 z 15
    Tytuł:
    Numerical modelling of thermal phenomena in Yb:YAG laser welding process
    Autorzy:
    Piekarska, W.
    Kubiak, M.
    Saternus, Z.
    Domański, T.
    Stano, S.
    Radcenko, M. V.
    Ivanov, S. G.
    Powiązania:
    https://bibliotekanauki.pl/articles/122518.pdf
    Data publikacji:
    2014
    Wydawca:
    Politechnika Częstochowska. Wydawnictwo Politechniki Częstochowskiej
    Tematy:
    numerical modelling
    laser welding
    heat source
    finite volume method
    kriging
    modelowanie numeryczne
    spawanie laserowe
    źródło ciepła
    metoda objętości skończonych
    Opis:
    This paper concerns numerical modelling of the Yb:YAG laser beam welding process. Numerical algorithms are developed for the analysis of thermal phenomena in a laser welded joint taking into account the motion of the liquid material in the welding pool. The model describing the laser beam heat source power distribution is developed on the basis of the kriging method. The heat source model uses the real laser beam profile obtained from experimental measurements of the beam emitted from a Trumpf D70 laser head performed on UFF100 analyzer. On the basis of developed numerical algorithms computer simulations of a Yb:YAG laser beam welding are carried out used to analyze the influence of the thermal load model on the shape and size of the weld.
    Źródło:
    Journal of Applied Mathematics and Computational Mechanics; 2014, 13, 3; 175-186
    2299-9965
    Pojawia się w:
    Journal of Applied Mathematics and Computational Mechanics
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    CdSe/ZnCdSe Quantum Dot Heterostructures for Yellow Spectral Range Grown on GaAs Substrates by Molecular Beam Epitaxy
    Autorzy:
    Gronin, S.
    Sorokin, S.
    Kazanov, D.
    Sedova, I.
    Klimko, G.
    Evropeytsev, E.
    Ivanov, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1376051.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Hi
    78.55.Et
    78.67.Hc
    68.65.Fg
    Opis:
    This paper reports on theoretical calculations and fabrication by molecular beam epitaxy of wide-gap II-VI heterostructures emitting in the "true" yellow range (560-600 nm) at room temperature. The active region of the structures comprises CdSe quantum dot active layer embedded into a strained $Zn_{1-x}Cd_{x}Se$ (x=0.2-0.5) quantum well surrounded by a Zn(S,Se)/ZnSe superlattice. Calculations of the CdSe/(Zn,Cd)Se/Zn(S,Se) quantum dot-quantum well luminescence wavelength performed using the envelope-function approximation predict rather narrow range of the total $Zn_{1-x}Cd_{x}Se$ quantum well thicknesses (d ≈ 2-4 nm) reducing efficiently the emission wavelength, while the variation of x (0.2-0.5) has much stronger effect. The calculations are in a reasonable agreement with the experimental data obtained on a series of test heterostructures. The maximum experimentally achieved emission wavelength at 300 K is as high as 600 nm, while the intense room temperature photoluminescence has been observed up to λ =590 nm only. To keep the structure pseudomorphic to GaAs as a whole the tensile-strained surrounding $ZnS_{0.17}Se_{0.83}$/ZnSe superlattice were introduced to compensate the compressive stress induced by the $Zn_{1-x}Cd_{x}Se$ quantum well. The graded-index waveguide laser heterostructure with a CdSe/$Zn_{0.65}Cd_{0.35}Se$/Zn(S,Se) quantum dot-quantum well active region emitting at λ =576 nm (T=300 K) with the 77 to 300 K intensity ratio of 2.5 has been demonstrated.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1096-1099
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical and Structural Properties of GaAs/AlGaAs Quantum Wells Grown by MBE in the Vicinity of As-Rich-GaAs/ZnSe Heterovalent Interface
    Autorzy:
    Klimko, G.
    Evropeytsev, E.
    Sitnikova, A.
    Gronin, S.
    Sedova, I.
    Sorokin, S.
    Ivanov, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1376199.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.-w
    68.65.-k
    81.15.Hi
    Opis:
    The studies of structural and optical properties of molecular beam epitaxy grown pseudomorphic hybrid structures with AlGaAs/GaAs quantum well placed closely to the GaAs/ZnSe heterointerface are presented. The interfaces were formed in different ways (Zn or Se initial GaAs surface exposure, different growth temperature and ZnSe growth mode) on As-rich c(4×4) and (2×4) GaAs surfaces. It has been demonstrated that the photoluminescence intensity from the near-heterointerface GaAs QW is influenced most significantly by the procedure of ZnSe growth initiation. The bright photoluminescence (77 K) from the near-interface GaAs quantum well is observed if the Se-decoration procedure is used during the GaAs/ZnSe heterointerface formation on (2×4)As GaAs surface. It reduces noticeably if the GaAs reconstruction changes to c(4×4)As and disappears completely when Zn pre-exposure of GaAs surface is used. These effects are discussed in terms of different ratio of Ga-Se and As-Zn bonds at the GaAs/ZnSe heterointerface resulting in different band offsets and/or uncompensated built-in electric fields.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1184-1186
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Cobalt Additives Influence on Phase Composition and Defect Structure of Manganese Dioxide Prepared from Fluorine Containing Electrolytes
    Autorzy:
    Sokolsky, G.
    Ivanov, S.
    Ivanova, N.
    Boldurev, Ye.
    Kobulinskaya, O.
    Demchenko, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1550089.pdf
    Data publikacji:
    2010-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.66.Fn
    61.72.-y
    85.40.Ry
    Opis:
    Manganese dioxide samples were prepared from fluorine containing electrolytes with additives of $Co^{2+}$ ions. Atomic absorption spectroscopy, thermogravimetric analysis, X-ray diffraction, scanning electron microscopy with energy dispersive X-ray analysis were the methods of the samples characterisation. Manganese dioxide at the presence of cobalt forms nanosized ramsdellite structure crystallites of mostly needle-like morphology with significant content of hydroxide groups. The main phase state in manganese dioxide samples obtained at the presence of cobalt is $γ-MnO_{2}$ with ramsdellite structure and low content of intergrowth defects. The sample doped both with lithium and cobalt can be indexed to a hollandite-type structure (tetragonal; space group I4/m) of $α-MnO_{2}$.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 1; 86-90
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Systematics and distribution of spruce species in the North-West of Russia
    Autorzy:
    Orlova, L.
    Gussarova, G.
    Glazkova, E.
    Egorov, A.
    Potokin, A.
    Ivanov, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2078206.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Instytut Dendrologii PAN
    Tematy:
    Picea
    diagnostic characters
    morphology
    plant variation
    geographic distribution
    Opis:
    Norway spruce (Picea abies) and Siberian spruce (P. obovata) are among the most important forest-forming coniferous species in the boreal part of Eurasia. Despite numerous publications on the taxonomy of Norway spruce and closely related taxa (P. obovata Ledeb. and P. fennica (Regel) Kom.), the problem of their identification, as well as clarification of their taxonomic status, has not been solved so far. Species delimitation is particularly challenging when P. abies, P. obovata and P. fennica occur in sympatry. Our study aims to assess taxonomic value of proposed earlier and search for stable diagnostic characters of cones and their scales to distinguish Picea abies and its sympatric in the North-West of Russia P. fennica and P. obovata. In addition, we analyzed and updated information on geographical distribution and phytocenotic characteristics of the above-mentioned species in the North-West of the European part of Russia. We examined herbarium specimens and cones sampled from 88 trees from 22 Picea stands located throughout the study region. Each tree was represented on average by 5 cones, in total 415 cones were analyzed. Morphometric analyses included 16 morphological characters of cones and their scales selected based on our own observations and published data. Multivariate comparison had shown a large overlap between P. obovata and P. fennica, while individuals of P. abies formed a separate and less overlapping cluster. Among the six qualitative (discrete) characters, shape of seed scale and shape of its upper margin have non-overlapping frequency distributions and can separate P. abies and P. obovata. Several new diagnostic characters are proposed: morphology and size of bract scales and ratio of the size of seed scales and bract scales. Phytocenotic analysis showed that different spruce taxa occupy specific habitats, which in their turn connected with the latitudinal gradient: in normally drained habitats, Picea obovata is found mainly in poor shrubby-green-mossy forests, which are typical of the northern and middle parts of the Northern taiga; Picea abies – in richer green-mossy habitats (Vaccinioso-hylocomiosum, Oxalidoso-hylocomiosum, Hylocomiosum), which begin to occur already from the middle part of the Northern taiga. Picea fennica occupies both habitats.
    Źródło:
    Dendrobiology; 2020, 84; 12-29
    1641-1307
    Pojawia się w:
    Dendrobiology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural and Optical Properties of Alternately-Strained $ZnS_{x}Se_{1-x}$/CdSe Superlattices with Effective Band-Gap 2.5-2.6 eV
    Autorzy:
    Evropeytsev, E.
    Sorokin, S.
    Gronin, S.
    Sedova, I.
    Klimko, G.
    Sitnikova, A.
    Baidakova, M.
    Ivanov, S.
    Toropov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1376074.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.Pt
    81.07.-b
    78.55.-m
    Opis:
    We report on design and fabrication of alternately-strained $ZnS_xSe_{1-x}$/CdSe short period superlattices with the effective band-gap 2.52, 2.58, and 2.61 eV and the total thickness ≈300 nm. Transmission electron microscopy, X-ray diffraction, and photoluminescence measurements reveal negligibly small density of misfit dislocations in the superlattices. The investigation of carrier transport along the superlattice growth axis, performed by the photoluminescence measurements of a superlattice with one enlarged quantum well, confirms efficient Bloch-type transport at temperatures above ≈ 100 K. Such superlattices look promising for the applications as a material for the wide band-gap photoactive region of a multi-junction solar cell comprising both III-V and II-VI materials.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1156-1158
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Luminescence in Highly Excited InGaN/GaN Multiple Quantum Wells Grown on GaN and Sapphire Substrates
    Autorzy:
    Miasojedovas, S.
    Juršėnas, S.
    Kurilčik, G.
    Žukauskas, A.
    Ivanov, V. Yu.
    Godlewski, M.
    Leszczyński, M.
    Perlin, P.
    Suski, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2038288.pdf
    Data publikacji:
    2004-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.45.+h
    78.47.+p
    78.67.De
    Opis:
    We report on high-excitation luminescence spectroscopy in In$\text{}_{x}$Ga$\text{}_{1-x}$N/GaN multiple quantum wells grown by MOCVD over sapphire and bulk GaN substrates. High excitation conditions enabled us to achieve a screening of the built-in field by free carriers. This allowed for the evaluation of the influence of band potential fluctuations due to the variation in In-content on efficiency of spontaneous and stimulated emission. InGaN/GaN multiple quantum wells grown on bulk GaN substrate exhibit a significantly lower stimulated emission threshold and thus enhanced lateral emission. Transient and dynamic properties of luminescence indicate a significant reduction in compositional disorder in homoepitaxially grown structures
    Źródło:
    Acta Physica Polonica A; 2004, 106, 2; 273-279
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electric Polarization of Onsager Fluids. II. Birefringence. 3. Role of Universal Pairwise Interactions
    Autorzy:
    Prezhdo, V. V.
    Tarasova, G. V.
    Prezhdo, O. V.
    Tyurin, S. A.
    Akulova, O. N.
    Ivanov, N. I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1943971.pdf
    Data publikacji:
    1996-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    31.70.Dk
    78.20.Fm
    72.80.Jc
    Opis:
    A comparative analysis of several methods of interpretation of solvent influence on molar Kerr constants of solutes was done. The analysis was based on experimentally determined electro-optical and dielectric properties of binary solutions of organic substances with various polarities, polarizabilities and optical anisotropies. It was found that the role of universal van-der-Waals interactions treated via London-Debye-Keesom potentials was best accounted for by a modified orientational theory of Kerr effect that developed the ansatz of reactive field and local dielectric permittivity. An extrapolation method of determination of gas phase molar Kerr constants of solutes was deduced from the theory.
    Źródło:
    Acta Physica Polonica A; 1996, 89, 1; 47-59
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical Studies of Thermally Activated Vertical Hole Transport in ZnCdSe/ZnSSe Superlattice
    Autorzy:
    Lebedev, A.
    Sorokin, S.
    Toropov, A.
    Shubina, T.
    Il'inskaya, N.
    Nekrutkina, O.
    Ivanov, S.
    Pozina, G.
    Bergman, P.
    Monemar, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1991641.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.Hf
    78.45.+h
    71.35.-y
    78.47.+p
    72.80.Ey
    Opis:
    Miniband transport in alternatively-strained ZnCdSe/ZnSSe short period superlattices is investigated using a structure with an enlarged quantum well. Temperature dependences of time-resolved and continuous wave photoluminescence have been measured, demonstrating an efficient temperature-induced vertical hole transport. A quantitative description is given for the carrier kinetics in these structures.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 421-426
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electric Polarization of Onsager Fluids. I. Dipole Polarization. 3. The Role of Universal Pairwise Interactions
    Autorzy:
    Prezhdo, V. V.
    Tarasova, G. V.
    Prezhdo, O. V.
    Τyurin, S. A.
    Ivanov, N. I.
    Kurskaya, T. N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933603.pdf
    Data publikacji:
    1995-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    35.20.My
    31.70.Dk
    Opis:
    A comparative study of the methods of interpretation of solvent influences on electric properties of molecules was conducted based on experimental dielectric properties of dilute solutions of organic substances of various polarity. It was shown that the solvent effect estimated via London-Debye-Keesom pairwise interaction potentials is best accounted for by theories of polarization of condense media which develop the anzatzes of reactive field and local dielectric permittivity.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 3; 419-434
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    AlGaN Quantum Well Heterostructures for Mid-Ultraviolet Emitters with Improved Room Temperature Quantum Efficiency
    Autorzy:
    Shevchenko, E.
    Toropov, A.
    Nechaev, D.
    Jmerik, V.
    Shubina, T.
    Ivanov, S.
    Yagovkina, M.
    Pozina, G.
    Bergman, J.
    Monemar, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1376069.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.De
    78.55.Cr
    71.35.-y
    78.66.-w
    Opis:
    We report on optical studies of exciton localization and recombination kinetics in two single 2.2 nm thick $Al_{x}Ga_{1-x}N$/$Al_{x+0.1}Ga_{0.9-x}N$ quantum well structures (x=0.55 and 0.6) grown by plasma assisted molecular beam epitaxy on a c-sapphire substrate. Strong localization potential inherent for both the quantum well and barrier regions results in merging of the quantum well and barrier emission spectra into a single broad line centered at 285 nm (x=0.55) and 275 nm (x=0.6). Time-resolved photoluminescence measurements revealed surprising temperature stability of the photoluminescence decay time constant ( ≈ 400 ps) relevant to the recombination of the quantum well localized excitons. This observation implies nearly constant quantum efficiency of the quantum well emission in the whole range from 4.6 to 300 K.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1140-1142
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    InSb Quantum Dots in an InAsSb Matrix Grown by Molecular Beam Epitaxy
    Autorzy:
    Semenov, A. N.
    Solov'ev, V. A.
    Meltser, B. Ya.
    Lyublinskaya, O. G.
    Terent'ev, Ya. V.
    Sitnikova, A. A.
    Ivanov, S. V.
    Powiązania:
    https://bibliotekanauki.pl/articles/2044535.pdf
    Data publikacji:
    2005-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.67.Hc
    81.07.Ta
    81.15.Hi
    81.16.Dn
    Opis:
    We report on molecular beam epitaxy of InSb insertions in InAs and InAsSb matrices, emitting at wavelengths beyond 4μm. Different growth techniques for deposition of InSb quantum dots in the 1-2 monolayer range of the InSb nominal thickness, namely conventional molecular beam epitaxy and migration enhanced epitaxy, as well as different matrices (InAs and InAsSb) have been employed for increasing the emission wavelength of the InSb/InAs nanostructures. The formation of InSb quantum dots has been studied in situ using reflection high energy electron diffraction and ex situ by using transmission electron microscopy. The peculiarities of In(Ga)AsSb alloys growth and compositional control are also discussed. Bright photoluminescence up to 4.5μm has been observed at 80 K.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 5; 859-865
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    On the nature of changes in the optical characterization produced in sapphire on its irradiation with a pulsed powerful stream of hydrogen ions
    Autorzy:
    Gribkov, V.
    Ivanov, L.
    Maslyaev, S.
    Pimenov, V.
    Sadowski, M.
    Skladnik-Sadowska, E.
    Banaszak, A.
    Kopeć, G.
    Cheblukov, Y.
    Kozodaev, M. A.
    Suvorov, A. L.
    Smirnov, I. S.
    Powiązania:
    https://bibliotekanauki.pl/articles/147991.pdf
    Data publikacji:
    2004
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    optical characteristics
    irradiation
    fast ion stream
    morphology
    Opis:
    Changes in the optical characteristics in synthetic sapphire specimens produced by microsecond pulse irradiation with a stream of hydrogen ions of energies ranging up to tens keV have been observed. Data on decrease in the optical reflection, measured within the wavelength range of 200 900 nm, are presented. This characterization is compared with the data received by optical and atomic force microscopy as well as by lattice structure analysis performed with X-rays. The measurements indicate that the changes of optical parameters are not a consequence of absorption increase and/or sapphire decomposition. They result from modifications of the morphology and structure of surface layer of the sapphire samples, induced by irradiation.
    Źródło:
    Nukleonika; 2004, 49, 2; 43-49
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Microwave-Induced Delocalization of Excitons in Ternary Compounds of II-VI and III-V Semiconductors
    Autorzy:
    Ivanov, V. Yu.
    Godlewski, M.
    Khachapuridze, A.
    Yatsunenko, S.
    Wojtowicz, T.
    Karczewski, G.
    Bergman, J. P.
    Monemar, B.
    Shamirzaev, T.
    Zhuravlev, K.
    Leonardi, K.
    Hommel, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035757.pdf
    Data publikacji:
    2003-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.35.Ji
    72.25.Rb
    76.70.Hb
    78.55.Et
    Opis:
    In this work we employ technique of optically detected cyclotron resonance for evaluation of the role of localization processes in CdTe/CdMnTe and CdMnTe/CdMgTe quantum well structures. From microwave-induced changes of excitonic emissions we evaluate magnitude of potential fluctuations (Stokes shift), correlate optically detected cyclotron resonance results with the results of time-resolved experiments and discuss nature of recombination processes in the limit of a strong localization.
    Źródło:
    Acta Physica Polonica A; 2003, 103, 6; 559-566
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Spin Dependent Interactions of Free Carriers and Manganese Ions in Nanostructures of Wide Band Gap II-Mn-VI Semiconductors - Mechanism of Lifetime Reduction
    Autorzy:
    Yatsunenko, S.
    Khachapuridze, A.
    Ivanov, V. Yu.
    Godlewski, M.
    Khoi, Le Van
    Gołacki, Z.
    Karczewski, G.
    Goldys, E. M.
    Phillips, M.
    Klar, P. J.
    Heimbrodt, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/2036034.pdf
    Data publikacji:
    2003-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Gs
    76.30.Fc
    76.70.Hb
    78.55.Et
    Opis:
    Based on the results of optically detected magnetic resonance and time-resolved investigations we relate the observed lifetime shortening of intra-shell Mn$\text{}^{2+}$ emission to spin dependent magnetic interactions between localized spins of Mn$\text{}^{2+}$ ions and spins/magnetic moments of free carriers. We show that this mechanism is active in both bulk and in low dimensional structures, such as quantum wells, quantum dots, and nanostructures.
    Źródło:
    Acta Physica Polonica A; 2003, 103, 6; 643-648
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
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