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Tytuł:
Micro-Raman Investigation of Hydrogen Localized in Cone-Shaped Defects Formed on the Silicon Wafer Surface
Autorzy:
Frantskevich, N.
Fedotov, A.
Frantskevich, A.
Mazanik, N.
Powiązania:
https://bibliotekanauki.pl/articles/1366278.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Am
61.72.uf
Opis:
The goal of this work is the micro-Raman study of molecular hydrogen localized in cone-shaped defects, which are formed on the surface of previously helium implanted and annealed Czochralski Si wafers as a result of hydrogen plasma treatment. The line at ≈ 4158 $cm^{-1}$ corresponding to molecular hydrogen is observed in the Raman spectra when the laser beam is focused both on cone-shaped defects or defect-free regions of the surface. The laser irradiation of cone-shaped defects during micro-Raman experiments leads to intensity increase of this line when the irradiation time is increasing, with subsequent appearance of lines at ≈ 3621 and ≈ 3698 $cm^{-1}$ and simultaneous disappearance of 4158 $cm^{-1}$ line. No such effect was observed when the laser beam was focused on defect-free regions. The experiments have shown that heat treatment of the samples studied causes the appearance in the Raman spectra of lines at ≈ 3468, ≈ 3621, and ≈ 3812 $cm^{-1}$, which can be associated with molecular hydrogen.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1332-1334
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Mechanisms of effective management in electric power companies
Mechanizmy efektywnego zarządzania w przedsiębiorstwach energetycznych
Autorzy:
Vagapova, N.
Fedotov, A.
Sidorov, A.
Vagapov, G.
Powiązania:
https://bibliotekanauki.pl/articles/405611.pdf
Data publikacji:
2016
Wydawca:
Politechnika Częstochowska
Tematy:
efficiency
electric power company
manager
soft skills
self-management skill
wydajność
przedsiębiorstwo energetyczne
menedżer
umiejętności miękkie
umiejętność samozarządzania
Opis:
The problem of efficiency of electric power companies is quite relevance. The conducted researches in this area are directed on different aspects of activity of the companies. However, the problem of effective management from the point of the competency approach is researched in a less degree. Competency approach is one of the important factors of the success of business projects. The reason is in its effects of the development of organizations, and consequently the business success and profit. The paper gives analysis of significance value of soft skills and self-management skill for effective activity of managers of electric power companies. The authors indicate the high importance of the group of soft skills and self-management skill as one of the base of soft skills for effective manager of electric power companies. Performed research has shown that soft skill and self-management skill are the important property of managers. Soft skills and self-government skill are able to influence the overall performance of managers. The processes of managing of soft skills and self-management skill are becoming important.
Problem efektywności przedsiębiorstw energetycznych jest dość istotny. Przeprowadzone badania w tej dziedzinie są kierowane na różne aspekty działalności firm. Jednakże problem skutecznego zarządzania z punktu podejścia kompetencyjnego bada się w mniejszym stopniu. Podejście kompetencyjne jest jednym z najważniejszych czynników powodzenia projektów biznesowych. Powodem jest jego wpływ na rozwój organizacji, a w konsekwencji biznesowego powodzenia i zysku. Niniejszy artykuł analizuje znaczenie wartości umiejętności miękkich i umiejętności samozarządzania dla efektywnej działalności menedżerów przedsiębiorstw energetycznych. Autorzy wskazują na duże znaczenie grupy miękkich umiejętności i umiejętności samozarządzania jako jednej z podstaw miękkich umiejętności skutecznego menedżera przedsiębiorstw energetycznych. Przeprowadzone badania wykazały, że miękkie umiejętności i umiejętność samozarządzania są ważnymi cechami menedżerów. Miękkie umiejętności i umiejętność samozarządzania są w stanie wpływać na ogólną wydajność menedżerów. Procesy zarządzania umiejętnościami miękkimi i umiejętnością samodzielnego zarządzania stają się ważne.
Źródło:
Polish Journal of Management Studies; 2016, 13, 2; 183-191
2081-7452
Pojawia się w:
Polish Journal of Management Studies
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Annealing on the Electrical Properties οf Cz-Si Wafers Previously Subjected to the Hydrogen Ion-Beam Treatment
Autorzy:
Fedotov, A.
Korolik, O.
Mazanik, A.
Kołtunowicz, T.
Żukowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1503985.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uf
81.40.Ef
Opis:
The main goal of this work is to establish the influence of annealing on the properties of Cz-Si wafers previously subjected to the hydrogen ion-beam treatment at 25 or 300-350°C. It is demonstrated by the conducted study that, despite similarity in the effects of the hydrogen ion-beam treatment at different temperatures on some electrical properties of the wafers (photovoltage spectra, thermoelectromotive force sign), thermal stability of changes in these properties due to the hydrogen ion-beam treatment depends on the hydrogenation temperature.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 108-110
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Annealing of $(CoFeZr)_{x}(CaF_2)_{100-x}$ Nanocomposites Produced by the Ion-Beam Sputtering in the Ar and $O_2$ Ambient
Autorzy:
Kołtunowicz, T.
Zhukowski, P.
Bondariev, V.
Fedotova, J.
Fedotov, A.
Powiązania:
https://bibliotekanauki.pl/articles/1400483.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
62.23.Pq
79.20.Rf
81.40.Ef
72.80.Le
Opis:
This paper presents the investigations of electrical properties and effect of annealing on conductivity of $(CoFeZr)_{x}(CaF_2)_{100-x}$ nanocomposites produced by ion-beam sputtering in the Ar and $O_2$ ambient. Investigations into conductivity of $(CoFeZr)_{x}(CaF_2)_{100-x}$ nanocomposites depending on the measuring temperature and the annealing temperature have been performed. The application of a combined argon-oxygen beam brings about lowering of the potential barrier on the surface of nanoparticles. In the course of annealing the additional oxidation occurs. First it proceeds on the surface and then all through the metallic-phase particles.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 932-934
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Percolation Phenomena in $Cu_{x}(SiO_{y})_{100-x}$ Nanocomposite Films Produced by Ion Beam-Sputtering
Autorzy:
Koltunowicz, T.
Zukowski, P.
Czarnacka, K.
Svito, I.
Fedotov, A.
Powiązania:
https://bibliotekanauki.pl/articles/1402230.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
84.37.+q
72.80.Ga
73.22.-f
61.46.Df
64.60.ah
Opis:
In this paper the results of examinations of nanocomposites $Cu_{x}(SiO_{y})_{100-x}$ produced by ion beam sputtering using argon ions were presented. The examinations were performed by the use of ac devices for measuring frequency in the range 50 Hz-1 MHz and temperatures from 81 K to 273 K. The measurements were performed for the samples directly after production. Based on temperature dependences of conductivity σ , which were determined at the frequency 100 Hz, the Arrhenius graphs were prepared. From these graphs conductivity activation energies ΔE were calculated. Dependences of conductivity and activation energy of electrons on the metallic phase content x at the frequency 100 Hz were determined. Analysis of the obtained dependences shows that conductivity is a parabolic function of the metallic phase content x in nanocomposites. Changes of activation energies of nanocomposites, in which metallic phase contents are in the ranges x < 12 at.% and x > 68 at.%, demonstrate negative values - metallic type of conductivity. In the range 12 at.% < x < 68 at.% activation energies have positive values - the dielectric type of conductivity. It was established that for the metallic phase content of about 68 at.% the real percolation threshold occurs, and the conduction changes from dielectric to metallic type.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 908-911
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
DC conductivity mechanisms in granular nanocomposite films Cux(SiO2)1-x, deposited in Ar gas atmosphere
Autorzy:
Fedotov, A.
Swito, I.
Patryn, A.
Kalinin, Y.
Sitnikov, A.
Powiązania:
https://bibliotekanauki.pl/articles/118468.pdf
Data publikacji:
2012
Wydawca:
Politechnika Koszalińska. Wydawnictwo Uczelniane
Tematy:
DC conductivity
metal-insulator transition
nanocomposites
percolation
przewodnictwo DC
metal przejściowy-izolator
nanokompozyty
przesączanie
Opis:
In the article are presented the results of the study of structure of Cux(SiO2)1-x nanocomposites with a wide range of metallic fraction content and their DC conductivity measured in the temperature range between 3 and 300 K. The Cux(SiO2)1-x thin film samples with 0.36 < x < 0 and thicknesses 3 to 5 μm were fabricated by ion-beam sputtering of the compound Cu/SiO2 target with argon onto the glass ceramic substrate. The as-deposited films displayed their evolution from practically homogeneous (at x < 0.50) to granular (in the range of 0.50 < x < 0.58) structure with x increase where the granules dimensions approached approximately 100 - 200 nm. The study of conductivity have shown that the studied nanocomposite films with x < 0.68 are on dielectric side of metal-insulator transition and possess thermally activated tunneling of electrons between Cu nanoparticles whereas the samples with x > 0.68 indicate the metallic-like character of conductance along the percolating net of Cu nanoparticles inside of silica matrix. In dielectric regime (for nanocomposites with x < 0.68) DC carrier transport is realized by VRH mechanism described by Shklowski-Efros law, by jumps of electrons between Cu nanoparticles.
W artykule przedstawiono rezultaty badań struktury nanokompozytów Cux(SiO2)1-x w szerokim zakresie zawarcia fazy metalicznej and ich DC przewodnictwo zmierzone w zakresie temperatur od 3 do 300K. Cienkie warstwy Cux(SiO2)1-x z 0.36 < x < 0 i grubością 3 I 5 μm były przygotowane poprzez rozpylanie wiązką argonową jonową kompaunda Cu/SiO2 tarczy na podłoże ze szklanej ceramiki. Wszystkie warstwy po napylaniu wykazywały transformację struktury od praktycznie jednorodnej (dla x < 0.50) do granulowanej (0.50 < x < 0.58) gdzie, ze wzrostem x liniowe rozmiary granul osiągają 100-200 nm. Badania przewodnictwa wykazało że nanokompozytowe filmy z x < 0.68 są po dielektrynej stronie przejścia metal-izolator i wykazują termiczne aktywowane tunelowanie elektronów pomiędzy Cu nanocząstkami, w tym czasie jak przy x > 0.68 zauważono przewodność podobną do metalicznej wzdłuż perkolacyjnej sieci nanocząstek Cu wewnątrz matrycy silicydu. W trybie dielektrycznym (dla nanocząstek z x<0.68) transport nośników jest realizowany wg VRH mechanizmu zgodnie z prawem Shklowskiego-Efrosa, poprzez skoki elektronów pomiędzy Cu nanocząstkami.
Źródło:
Zeszyty Naukowe Wydziału Elektroniki i Informatyki Politechniki Koszalińskiej; 2012, 4; 29-42
1897-7421
Pojawia się w:
Zeszyty Naukowe Wydziału Elektroniki i Informatyki Politechniki Koszalińskiej
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hopping Conductance in Nanocomposites $(Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1 - x}$ Manufactured by Ion-Beam Sputtering of Complex Target in $Ar+O_2$ Ambient Gas
Autorzy:
Kołtunowicz, T.
Zhukowski, P.
Fedotova, V.
Saad, A.
Fedotov, A.
Powiązania:
https://bibliotekanauki.pl/articles/1503812.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.20.Rf
73.22.-f
84.37.+q
72.20.Ee
Opis:
We report the investigation of a real part of the admittance σ of granular nanocomposites $(Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1 - x}$ with 0.30 < x < 0.70 in the dielectric (hopping) regime. An analysis of the σ(T, f, x) dependences in the as-deposited and annealed films over the temperature 77 K < T < 300 K and frequency 50 < f < $10^6$ Hz ranges displayed the predominance of an activation (hopping) conductance mechanism with dσ/ dT > 0 for the samples below the percolation threshold $x_{C}$ ≈ 0.76 ± 0.05. Based on the earlier models for hopping AC conductance, computer simulation of the frequency coefficient $α_{f}$ of hopping conductance depending on the probability of jump p, frequency f, and also on the shape of σ(f) curve was performed. The experimental and simulation results revealed a good agreement.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 39-42
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Presence of Inductivity in $(CoFeZr)_x(PZT)_{1-x}$ Nanocomposite Produced by Ion Beam Sputtering
Autorzy:
Kołtunowicz, T.
Żukowski, P.
Boiko, O.
Fedotov, A.
Larkin, A.
Powiązania:
https://bibliotekanauki.pl/articles/1402211.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
62.23.Pq
79.20.Rf
81.40.Ef
72.80.Le
Opis:
This paper presents the investigations of the electrical properties of the $(CoFeZr)_{x}(PZT)_{1-x}$ nanocomposite with the metallic phase content x=43.8 at.%, which was produced by ion beam sputtering. Such preparation took place under an argon atmosphere with low oxygen content with its partial pressure $P_{O_2} = 2 \times 10^{-3} Pa$. The measurements were performed using alternating current within the frequency range of 50 Hz-10⁵ Hz for measuring temperatures ranging from 238 K to 328 K. The $(CoFeZr)_{43.8}(PZT)_{56.2}$ nanocomposite sample subjected to a 15 min annealing process in air at the temperature Tₐ=423 K demonstrates a phase angle of -90° ≤ θ ≤ 0° in the frequency range 50 Hz-10⁵ Hz. It corresponds to the capacitive type of conduction. In the frequency range 10⁴-10⁵ Hz sharp minima in selected conductivity vs. frequency characteristics occur, which corresponds to a current resonance phenomenon in RLC circuits. In case of a sample annealed at Tₐ=498 K the inductive type of conduction with 0° ≤ θ ≤ +90° occurs in a high frequency area. At the frequency $f_{r}$ characterized by the phase angle θ = 0°, the capacity value reaches its local minimum. It indicates a voltage resonance phenomenon in conventional RLC circuits. The θ = +90° crossing in the frequency dependence of phase angle corresponds to the current resonance phenomenon, which is represented by a strong local minimum in the conductivity vs. frequency characteristics.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 853-856
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spin-Polarized and Normal Hopping Magnetoresistance in Heavily Doped Silicon
Autorzy:
Fedotov, A.
Prischepa, S.
Danilyuk, A.
Svito, I.
Zukowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1365745.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uf
72.20.My
75.76.+j
Opis:
Investigation of electrical resistivity ρ and magnetoresistance in single crystalline n-type silicon heavily doped with antimony in the temperature range ΔT=5-300 K and at the magnetic inductance B up to 8 T was performed. It was established that, for the temperature range ΔT=25-300 K the conductivity is of activation type, while for ΔT=5-25 K it is of variable range hopping and is described by the Mott law. Parameters of the Mott hopping were calculated. It was shown that, to explain the experimental data, the spin polarized hopping via the occupied states has to be taken into account. The obtained parameters revealed that for the low temperature range ΔT=5-11 K the spin polarized hopping dominates, while for ΔT=11-20 K the spin polarized transport is accompanied by the wave function contraction.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1271-1274
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Features of Real Part of Admittance in the Nanocomposites $(Fe_{45}Co_{45}Zr_{10})_{x}(Al_2O_3)_{100 - x}$ Manufactured by the Ion-Beam Sputtering Technique with Ar Ions
Autorzy:
Kołtunowicz, T.
Zhukowski, P.
Fedotova, V.
Saad, A.
Larkin, A.
Fedotov, A.
Powiązania:
https://bibliotekanauki.pl/articles/1503798.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.20.Rf
73.22.-f
84.37.+q
72.20.Ee
Opis:
The temperature and frequency dependences of the admittance real part σ (T, f) in granular $(Fe_{45}Co_{45}Zr_{10})_{x}(Al_2O_3)_{100 - x}$ nanocomposite films around the percolation threshold $x_{C}$ were investigated. The behaviour of σ (T, f) vs. the temperature and frequency over the ranges 77-300 K and 50 Hz-1 MHz, respectively, displays the predominance of an activation (hopping) conductance mechanism for the samples below the percolation threshold $x_{C}$ and of a metallic one beyond the $x_{C}$ determined as 54 ± 2 at.%. The mean hopping range d for the nanoparticles diameter D was estimated at different metallic phase content x.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 35-38
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation of Noncoil-Like Inductance in Nanocomposites $(Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1-x}$ Manufactured by Ion-Beam Sputtering of Complex Targets in $Ar+O_2$ Atmosphere
Autorzy:
Zhukowski, P.
Kołtunowicz, T.
Węgierek, P.
Fedotova, J.
Fedotov, A.
Larkin, A.
Powiązania:
https://bibliotekanauki.pl/articles/1503848.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
73.22.-f
81.40.Ef
84.37.+q
72.20.Ee
Opis:
This paper investigates the inductive contribution to AC conductance in the granular nanocomposites $(Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1-x}$. The initial nanocomposites studied were manufactured in $Ar+O_2$ atmosphere by ion-beam sputtering of the target containing $Fe_{0.45}Co_{0.45}Zr_{0.10}$ and alumina stripes and then subjected to the annealing procedure in air over the temperature range 373 K < $T_{a}$ < 873 K. These samples, before and after annealing, were studied using the temperature 77 K < $T_{p}$ < 300 K and frequency 50 Hz < f < 1 MHz dependences of a real part of the admittance σ(T, f). Analysis of the observed σ (f, $T_{p}$) dependences for x < 0.5 demonstrated that in the studied samples the equivalent circuits with the capacitive and noncoil-like inductive contributions can be accomplished. Just in this case, the capacitive properties of RLC circuit with the phase angle - 90° ≤ $\Theta_{L}$ < 0° are exhibited at low frequencies and the inductive properties with 0° ≤ $\Theta_{H}$ < 90° become apparent at high frequencies. A value of the critical frequency $f_{R}$, where $\Theta_{H}$ changes sign, depends on the metallic phase concentration x, measuring temperature $T_{p}$, and annealing temperature $T_{a}$.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 43-45
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Low-Temperature DC Carrier Transport in $(Co_{0.45}Fe_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1-x}$ Nanocomposites Sputtered in Mixed Argon-Oxygen Atmosphere
Autorzy:
Svito, I.
Fedotov, A.
Saad, A.
Koltunowicz, T.
Zukowski, P.
Bury, P.
Powiązania:
https://bibliotekanauki.pl/articles/1366313.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.22.-f
72.20.Ee
64.60.ah
Opis:
This paper studies the temperature dependences (2 < T < 300 K) of the DC conductivity σ(T) for the $(Co_{0.45}Fe_{0.45}Zr_{0.10})_x(Al_2O_3)_{1-x}$ nanocomposites (30 < x < 65 at.%) sputtered in Ar + $O_2$ atmosphere. It is shown that at temperatures lower than 100-150 K dependences of DC conductance on temperature for all the studied samples are due to the Shklovski-Efros variable range hopping mechanism. It was also observed that σ(x,T) dependences can be attributed to the formation of FeCo-based oxide "shells" around metallic alloy nanoparticles due to incorporation of oxygen in the vacuum chamber during the deposition procedure.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1351-1354
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Mechanisms of Carrier Transport in $Cu_x(SiO_2)_{1-x}$ Nanocomposites Manufactured by Ion-Beam Sputtering with Ar Ions
Autorzy:
Fedotov, A.
Mazanik, A.
Svito, I.
Saad, A.
Fedotova, V.
Czarnacka, K.
Koltunowicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1402220.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
84.37.+q
72.80.Ga
73.22.-f
61.46.Df
64.60.ah
Opis:
The present paper investigates the temperature/frequency dependences of admittance Z in the granular $Cu_x(SiO_2)_{1-x}$ nanocomposite films around the percolation threshold $x_{C}$ in the temperature range of 4-300 K and frequencies of 20-10⁶ Hz. The behavior of low-frequency ReZ(T) dependences displayed the predominance of electrons hopping between the closest Cu-based nanoparticles for the samples below the percolation threshold $x_{C}$ ≈ 0.59 and nearly metallic behaviour beyond the $x_{C}$. The high-frequency curves ReZ(f) at temperatures T > 10 K for the samples with x < $x_{C}$ exhibited behavior close to ReZ(f) ≈ $f^{-s}$ with s ≈ 1.0 which is very similar to the known Mott law for electron hopping mechanism. For the samples beyond the percolation threshold (x > $x_{C}$), the frequency dependences of ReZ(f) displayed inductive-like (not capacitive) behaviour with positive values of the phase shift angles.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 883-886
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Admittance and Permittivity in Doped Layered $TlGaSe_2$ Single Crystals
Autorzy:
Dawood, S.
Fedotov, A.
Mammadov, T.
Zukowski, P.
Koltunowicz, T.
Saad, A.
Drozdov, N.
Powiązania:
https://bibliotekanauki.pl/articles/1365735.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ey
84.37.+q
64.70.Nd
Opis:
In doped $TlGaSe_2$ crystals the phase transitions at low temperatures (100-170 K) were observed using admittance and dielectric spectroscopy in a temperature range of 80-320 K. The admittance and permittivity measurements in the studied samples indicated that after Fe or Tb doping by impurities with concentrations $N_\text{imp}$ < 0.5 at.% nonequilibrium electronic phase transition is observed. Doping with $N_\text{imp}$ > 0.5 at.% resulted in full suppression of this phase transition presence.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1267-1270
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Voltage and Current Resonance in Nanocomposite $(FeCoZr)_x(CaF_2)_{100-x}$ Produced by Ion-Beam Sputtering in Pure Argon Atmosphere
Autorzy:
Koltunowicz, T.
Zukowski, P.
Bondariev, V.
Fedotov, A.
Svito, I.
Fedotova, J.
Saad, A.
Powiązania:
https://bibliotekanauki.pl/articles/1402224.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
62.23.Pq
79.20.Rf
81.40.Ef
72.80.Le
Opis:
In this paper the results of investigations of electrical properties of metal-dielectric nanocomposites $(FeCoZr)_x(CaF_2)_{100-x}$ are presented. The samples with the metallic phase content x=45.7 at.% were produced by ion-beam sputtering method in pure argon atmosphere, and subsequently annealed at 398 K for 15 min. The measurements of electrical properties were performed in the frequency range from 50 Hz to 1 MHz. The frequency dependences of phase angle θ, capacity $C_{p}$, conductivity σ and dielectric loss factor tanδ were measured at seven different temperatures ranging from 148 K to 263 K. It was found that the nanocomposite exhibits the phenomena of voltage resonance and current resonance, characteristic of the conventional RLC circuits with series and parallel connections of elements.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 897-900
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 22

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