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Tytuł:
Charge and Spin Transport in a Metal-Semiconductor Heterostructure with Double Schottky Barriers
Autorzy:
Wolski, S.
Jasiukiewicz, C.
Dugaev, V.
Barnaś, J.
Slobodskyy, T.
Hansen, W.
Powiązania:
https://bibliotekanauki.pl/articles/1386690.pdf
Data publikacji:
2015-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.30.+y
73.40.-c
75.76.+j
Opis:
Taking into account the available experimental results, we model the electronic properties and current-voltage characteristics of a ferromagnet-semiconductor junction. The Fe/GaAs interface is considered as a Fe/(i-GaAs)/n⁺-GaAs/n-GaAs multilayer structure with the Schottky barrier. We also calculate numerically the current-voltage characteristics of a double-Schottky-barrier structure Fe/GaAs/Fe, which are in agreement with available experimental data. For this structure, we have estimated the spin current in the GaAs layer, which characterizes spin injection from the ferromagnet to the semiconductor.
Źródło:
Acta Physica Polonica A; 2015, 127, 2; 472-474
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrons in a Semiconductor Quantum Well of the Magnetic Tunneling Structure
Autorzy:
Szczepański, T.
Dugaev, V.
Powiązania:
https://bibliotekanauki.pl/articles/1402583.pdf
Data publikacji:
2015-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.25.Dc
73.21.Fg
85.75.Mm
Opis:
We discuss the properties of resonant tunneling diode with resonant levels in the quantum well. The energy levels are formed inside the well as a consequence of quantization of the states between two potential barriers. We solved the Schrödinger equation for the multilayer structure and found the energy of resonant level as a function of the width of quantum well for different parameters of energy profile in the equilibrium. The results present the dependence of spin splitting in the quantum well of nonmagnetic semiconductor on the spin polarization of electrodes.
Źródło:
Acta Physica Polonica A; 2015, 128, 2; 222-224
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Rashba Spin-Orbit Coupling on the Spin Polarization of Holes in Two-Dimensional GaMnAs Magnetic Semiconductors
Autorzy:
Stagraczyński, S.
Dugaev, V.
Berakdar, J.
Powiązania:
https://bibliotekanauki.pl/articles/1032428.pdf
Data publikacji:
2017-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
Magnetization
Rashba spin-orbit coupling
Opis:
We consider the effect of the Rashba spin-orbital coupling in two-dimensional GaAs semiconductor heavily doped with Mn, on the spin polarization of holes. Due to the strong internal spin-orbit interaction in GaAs, the spin of a hole is not a good quantum number but the hole in some energy state has a certain mean value of spin, which can be strongly affected by the Rashba spin-orbital interaction related to the substrate for 2D material.
Źródło:
Acta Physica Polonica A; 2017, 132, 1; 189-192
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Strain Designed Magnetic Properties of III-V Magnetic Semiconductors
Autorzy:
Stagraczyński, S.
Jasiukiewicz, C.
Dugaev, V.
Berakdar, J.
Powiązania:
https://bibliotekanauki.pl/articles/1402582.pdf
Data publikacji:
2015-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
75.30.Gw
75.80.+q
Opis:
We present the theoretical analysis of a possibility of the magnetic anisotropy control using various components of the strain tensor in III-V magnetic semiconductor. We used the Kane model of the valence bands for the numerical simulations of the influence of strain on the Mn doped GaAs valence band structure. Calculating numerically the energy structure of deformed GaMnAs magnetic semiconductor, we also found the total energy of electron system as a function of orientation of the average magnetization vector. Our calculations show how the direction of the magnetization easy axis can be effectively rotated by using different types of deformation.
Źródło:
Acta Physica Polonica A; 2015, 128, 2; 219-221
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deformation Potentials in IV-VI Quantum Wells
Autorzy:
Litvinov, V.
Dugaev, V.
Oszwałdowski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1872656.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
71.50.+t
Opis:
Theoretical studies of the deformation potentials in quantum wells and superlattices are presented. It is shown that a difference exists between the bulk deformation potentials and deformation potentials in the low dimensional structures made of narrow-gap semiconductors.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 345-348
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A Photoluminescence Study in PbS-EuS Superlattices
Autorzy:
Kowalczyk, L.
Sadowski, J.
Gałązka, R. R.
Stachow-Wójcik, A.
Sipatov, A. Yu.
Volobuev, V. V.
Smirnov, V. A.
Dugaev, V. K.
Powiązania:
https://bibliotekanauki.pl/articles/1991612.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
Opis:
Investigations of the photoluminescence of PbS-EuS superlattices deposited on (111)BaF$\text{}_{2}$ substrates are presented. Quantum-size and deformation effects in photoluminescence spectra are observed. The strain-induced gap shift and valence-band offset is determined from experimental results. A strong stimulated photoluminescence with relatively low threshold was observed. It was found that the photocarriers generated in EuS barrier strongly affect the population of PbS subbands.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 397-400
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Acoustic Phonons on the Magnetic Anisotropy in GaMnAs Magnetic Semiconductors
Autorzy:
Jasiukiewicz, C.
Stagraczyński, S.
Lehmann, D.
Dugaev, V.
Berakdar, J.
Powiązania:
https://bibliotekanauki.pl/articles/1402566.pdf
Data publikacji:
2015-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
75.30.Gw
77.80.Fm
Opis:
We present a theoretical description of the influence of incoherent acoustic phonons on the magnetic anisotropy of magnetic semiconductors. Our theory is based on the six-band Kane model of the electron energy spectrum describing the valence band with k· p Hamiltonian including the hole-phonon interaction term. We include the effect of incoherent phonons through the hole self-energy in the six-band model, and assume a strong laser-pulse-induced flux of non-equilibrium acoustic phonons. The results of numerical calculations of magnetic anisotropy performed for (GaMn)(AsP) magnetic alloy semiconductors demonstrate the essential role of incoherent phonons.
Źródło:
Acta Physica Polonica A; 2015, 128, 2; 179-181
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Absorption of Twisted and Linearly Polarized Light in Graphene with Rashba Spin-Orbit Interaction
Autorzy:
Inglot, M.
Dugaev, V.
Powiązania:
https://bibliotekanauki.pl/articles/1032472.pdf
Data publikacji:
2017-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.25.Bs
78.20.Ci
78.40.Fy
81.05.ue
Opis:
Theoretical analysis of the electron excitations in graphene on substrate by twisted, linear and circular polarization light is presented. We use a model of graphene with constant Rashba spin-orbit interaction. In this case, the band structure of electrons includes four energy bands. The main objective of this work is to compare light absorptions in graphene for different kinds of light, namely, twisted (with nonzero orbital angular momentum) and linear polarized light. The orbital angular momentum light is characterized by some parameters q and l, which can modify the response, while for the linear polarization, the absorption is modified only in the region determined by the Rashba spin-orbit coupling α.
Źródło:
Acta Physica Polonica A; 2017, 132, 1; 193-195
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Graphene Conductance in the Presence of Resonant Impurities
Autorzy:
Inglot, M.
Dugaev, V.
Powiązania:
https://bibliotekanauki.pl/articles/1402560.pdf
Data publikacji:
2015-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Fk
72.80.Vp
73.20.Hb
Opis:
We discuss transport properties of graphene related to the resonant scattering from impurities and defects. Two different models describing defects in the bulk of graphene or at the graphene surface are used for the calculation of self energy of electrons scattered from short-range impurities or defects. The results of numerical calculations demonstrate a resonant character of resistance. In the case of neutral impurities or defects the scattering also leads to a resonant decrease of the spin relaxation time.
Źródło:
Acta Physica Polonica A; 2015, 128, 2; 163-165
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Influence of Electric Field οn the Optical Spin Polarization of Electrons in a Diluted Magnetic Semiconductor
Autorzy:
Gorley, P.
Mysliuk, O.
Dugaev, V.
Horley, P.
Barnaś, J.
Powiązania:
https://bibliotekanauki.pl/articles/1791345.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.25.Fe
72.25.Rb
72.25.-b
Opis:
In this paper we present the results of theoretical calculations for spin polarization η of band electrons in diluted magnetic semiconductor subjected to a polarized light wave and a carrier-warming electric field E. It was shown that the maximum value of $η_{max}$ can be reached at a certain $E_{max}$ corresponding to the peak of the carrier drift velocity v(E). For the higher doping impurity concentration, the values of $η_{max}$ become lower due to the equivalent decrease of electron temperature.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 909-910
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Anomalous Hall Effect in IV-VI Semiconductors
Autorzy:
Dyrdał, A.
Dugaev, V.
Barnaś, J.
Brodowska, B.
Dobrowolski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1810533.pdf
Data publikacji:
2009-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.-i
75.50.Pp
72.25.Dc
Opis:
We consider theoretically the topological contribution to the anomalous Hall effect in narrow-gap IV-VI magnetic semiconductors in which the relativistic terms are relatively large and determine both the non-parabolicity of the energy spectrum and strong spin-orbit interaction. We use the relativistic Dirac model and linear response theory to calculate this contribution. Experimental data on the anomalous Hall effect in these compounds are also presented and discussed.
Źródło:
Acta Physica Polonica A; 2009, 115, 1; 287-289
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spin Hall Effect in a Two-Dimensional Electron Gas with Strong Rashba Spin-Orbit Interaction: Semiclassical Keldysh Approach
Autorzy:
Dyrdał, A.
Barnaś, J.
Ivanov, V.
Dugaev, V.
Powiązania:
https://bibliotekanauki.pl/articles/1403654.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.63.-b
72.25.Dc
75.70.Tj
Opis:
Spin Hall effect in a two-dimensional electron gas with the Rashba spin-orbit interaction is analyzed theoretically. We use the Keldysh technique for nonequilibrium processes, modified in order to take into account well-defined splitting of the Fermi surface due to strong spin-orbit coupling. Using such an approach, we reconsider the two-dimensional electron gas with the Rashba spin-orbit interaction and show that impurity scattering processes suppress the spin Hall effect.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1059-1061
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Energy Spectrum in Quantum Dots of Lead and Tin Chalcogenides Semiconducting Compounds
Autorzy:
Dugaev, V. K.
Litvinov, V. I.
Petrov, P. P.
Mironov, O. A.
Nashchekina, O. N.
Oszwałdowski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1923782.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.50.+t
71.90.+q
Opis:
The energy spectrum of a quantum dot made from IV-VI narrow gap semiconductors is studied. The calculations of the energy levels as functions of the dot radius are performed. When the anisotropy of the bare energy spectrum is strong, the energy levels are calculated using Fal'kovskii's adiabatic approximation for multiband systems. When the quantum dot material has an inverted band gap with respect to the host, the low-energy states within the fundamental gap are shown to arise.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 797-800
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Indirect Exchange in Band-Inverted Heterojunctions of IV-VI Semimagnetic Compounds
Autorzy:
Dugaev, V. K.
Litvinov, V. I.
Oszwałdowski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1929733.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Dx
75.30.Et
75.30.Hx
Opis:
The interaction of spins localized within the band-inverted heterojunction with the Weyl excitations is shown to differ significantly from the usual s-d interaction. The indirect exchange interaction is long-range and anti-ferromagnetic. The magnitude of interaction decreases with the distance as R$\text{}^{-3}$. The effective interaction depends on the parameters of electron energy spectrum and parameters of the heterojunction as well. It consists of anisotropic Heisenberg term and of pseudodipole terms.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 709-712
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interaction Between Magnetic Layers in Structures with Narrow-Gap IV-VI Semiconductors
Autorzy:
Dugaev, V. K.
Litvinov, V. I.
Dobrowolski, W.
Story, T.
Powiązania:
https://bibliotekanauki.pl/articles/2013062.pdf
Data publikacji:
2000-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.70.Cn
75.50.Pp
75.70.Ak
Opis:
The results of calculation of the indirect exchange interaction between magnetic layers are presented for the case of a structure with narrow-gap semiconducting IV-VI quantum well. The main mechanism is a magnetic polarization of the size-quantized electrons and holes inside the well. This type of interaction is suggested for the explanation of recent experiments on EuS/PbS structures.
Źródło:
Acta Physica Polonica A; 2000, 97, 3; 455-458
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 19

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