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Wyszukujesz frazę "Cywiński, G." wg kryterium: Autor

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    Wyświetlanie 1-13 z 13
    Tytuł:
    Search for T-Shaped Quantum Wires in CdTe/CdMg(Mn)Te System
    Autorzy:
    Cywiński, G.
    Wojtowicz, T.
    Karczewski, G.
    Kossut, J.
    Gębicki, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1969038.pdf
    Data publikacji:
    1998-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.15.Rn
    73.20.Dx
    85.40.Ux
    Opis:
    We attempted to produce and to investigate T-shaped wire structures of II-VI compounds. Our samples were grown on GaAs hybrid substrates in a two-stage growth process. The photoluminescence measurements resulted into two different possible polarization behaviors of recorder signal. We interpret one of these behaviors as due to quantum wire formation.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 2; 277-280
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Epitaxial Growths of II-VI Compounds on (110) Substrates
    Autorzy:
    Cywiński, G.
    Wojtowicz, T.
    Kopalko, K.
    Karczewski, G.
    Kossut, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1969044.pdf
    Data publikacji:
    1998-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.-a
    Opis:
    We studied epitaxial growth conditions of II-VI semiconductors on (110) substrates, which is indispensable for fabrication of T-shaped quantum wire structures. We experimented with different types of (110)-oriented substrates and monitored the surface quality of deposited layers in situ by reflection high energy electron diffraction and ex situ by photoluminescence. The aim of this work is to find optimum growth conditions of II-VI compounds on a cleaved edge of a superlattice as required by the overgrowth method.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 2; 281-284
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Near IR Refractive Index for GaInN Heavily Doped with Silicon
    Autorzy:
    Cywiński, G.
    Kudrawiec, R.
    Rzodkiewicz, W.
    Kryśko, M.
    Litwin-Staszewska, E.
    Misiewicz, J.
    Skierbiszewski, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791356.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.uj
    78.66.Fd
    81.15.Hi
    68.55.-a
    78.20.-e
    Opis:
    The authors report on growth and results of infrared measurements of GaInN heavily doped with silicon. The lattice matched to GaN epitaxial layer of $Ga_{0.998}In_{0.002}N:Si$ has been grown in plasma assisted molecular beam epitaxy in the metal rich conditions. The room temperature Hall concentration and mobility of electrons are 2× $10^{20} cm^{-3}$ and 67 $cm^{2}$/(Vs), respectively. The refractive index has been determined by variable angle spectroscopic ellipsometry. The refractive index exhibited a significant reduction of its value (from 2.25 to 2 at 1.55 μm) at near IR range where are the main interests of potential applications for nitride based intersubband devices. Reported here values of refractive indices at 1.55 and 1.3 μm are appropriate for fabrication of cladding layers with the required contrast to GaN for intersubband devices. The observed drop of refractive index is attributed to the carrier-induced plasma edge effect, which has been directly observed in reflectance spectrum.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 936-938
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    (120)-Oriented CdTe/CdMnTe Quantum Well Structures Grown by Molecular Beam Epitaxy
    Autorzy:
    Kutrowski, M.
    Karczewski, G.
    Cywiński, G.
    Surma, M.
    Grasza, K.
    Łusakowska, E.
    Kossut, J.
    Wojtowicz, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952037.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.20.Dx
    78.55.Et
    Opis:
    We report on the MBE growth and magnetooptical studies of (120)-oriented CdTe/CdMnTe quantum well structures. The quality of structures, as evaluated by the photoluminescence line width, was as good as that of the best structures grown in ⟨100⟩ direction. No spin splitting enhancement, expected theoretically, due to the reduction of the antiferromagnetic interaction between Mn ions in CdTe/CdMnTe digital alloy quantum wells grown along ⟨120⟩ direction was observed.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 879-882
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Waveguide Design for Long Wavelength InGaN Based Laser Diodes
    Autorzy:
    Muzioł, G.
    Turski, H.
    Siekacz, M.
    Sawicka, M.
    Wolny, P.
    Cheze, C.
    Cywiński, G.
    Perlin, P.
    Skierbiszewski, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1403640.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Px
    85.60.-q
    42.82.Et
    81.15.Hi
    Opis:
    One-dimensional optical waveguide calculations were performed to study the dependence of waveguide design on confinement factor (Γp) and optical losses ($\alpha_i$) of nitride laser diodes for emission wavelength ranging from 405 nm to 520 nm. We found that the conventional waveguide design containing GaN waveguide and AlGaN cladding layers known from violet laser diode does not support sufficient confinement of the optical mode for long wavelength devices (λ > 450 nm). We proposed a new design consisting of a thick InGaN waveguide which enhances the confinement. We compared the theoretical predictions with laser diodes grown by plasma assisted molecular beam epitaxy.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 1031-1033
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electrostatic Gates for GaN/AlGaN Quantum Point Contacts
    Autorzy:
    Czapkiewicz, M.
    Cywiński, G.
    Dybko, K.
    Siekacz, M.
    Wolny, P.
    Gierałtowska, S.
    Guziewicz, E.
    Skierbiszewski, C.
    Wróbel, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1403637.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Qv
    73.61.Ng
    73.23.-b
    Opis:
    We report on AlGaN/GaN quantum point contacts fabricated by using e-beam lithography and dry ion etching. The tunable nano-constrictions are defined by the integration of side and top gates in a single device. In this configuration, the planar gates are located on the both sides of a quantum channel and the metallic top gates, which cover the active region, are separated from the substrate by an insulating and passivating layers of $HfO_2$ or $Al_2O_3//HfO_2$ composite. The properties of devices have been tested at T = 4.2 K. For side gates we have obtained a very small surface leakage current $I_g < 10^{-11}$ A at gate voltages $|V_g|$ < 2 V, however, it is not enough to close the quantum channel. With top gates we have been able to reach the pinch-off voltage at $V_g$ = - 3.5 V at a cost of $I_g ≈ 10^{-6} A$, which has been identified as a bulk leakage current.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 1026-1028
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Topographical, Magnetic and Optical Studies of (II,Mn)VI Quantum Structures Grown on (Ga,Mn)As
    Autorzy:
    Butkutė, R.
    Aleszkiewicz, M.
    Janik, E.
    Cywiński, G.
    Wojnar, P.
    Däweritz, L.
    Primus, J.
    De Boeck, J.
    Kossut, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/2036853.pdf
    Data publikacji:
    2003-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Hi
    07.79.Pk
    78.55.-m
    Opis:
    We report on an overgrowth of quantum structures consisting of diluted magnetic semiconductor CdMnTe quantum wells with non-magnetic barriers made of CdMgTe or ZnTe on ferromagnetic MnAs and GaMnAs films by molecular beam epitaxy. Atomic force microscopy images of the quantum structures grown on MnAs demonstrated the existence of two types of regions on the surface: protruded islands with micrometric sizes, surrounded by areas of small-scale roughness. Magnetic force microscopy study of these samples revealed a magnetic domain structure only on the above mentioned islands. The (II,Mn)VI quantum wells grown on GaMnAs films exhibited relatively smooth surface, but no magnetic force microscopy signal was measurable either before or after magnetizing the sample. In the luminescence spectra of all our quantum structures the emission attributed to CdMnTe quantum wells was observed. The influence of magnetization on the luminescence line position was investigated.
    Źródło:
    Acta Physica Polonica A; 2003, 103, 6; 649-657
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te Parabolic Quantum Wells
    Autorzy:
    Wojtowicz, T.
    Kutrowski, M.
    Cywiński, G.
    Dynowska, E.
    Karczewski, G.
    Kossut, J.
    Fiederling, R.
    Mackh, G.
    Zehnder, U.
    Ossau, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952428.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.20.Dx
    78.55.Et
    Opis:
    We report on the growth and optical studies of II-VI semiconductor parabolic quantum wells made of Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te for a broad range of quantum well widths and Mn molar fractions x. Photoluminescence excitation spectra revealed several series of peaks equidistant in energy associated with interband optical transitions between harmonic oscillator levels. From the analysis of the spectra the valence band offset Q$\text{}_{hh}$ = 0.44±0.1 was determined for the CdTe/Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te system.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 977-980
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Novel CdTe/CdMgTe Graded Quantum Well Structures
    Autorzy:
    Wojtowicz, T.
    Kutrowski, M.
    Karczewski, G.
    Cywiński, G.
    Surma, M.
    Kossut, J.
    Yakovlev, D. R.
    Ossau, W.
    Landwehr, G.
    Kochereshko, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968448.pdf
    Data publikacji:
    1997-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.20.Dx
    78.55.Et
    Opis:
    We report on growth and magnetooptical studies of two types of novel CdTe/CdMgTe quantum well structures having a precisely controlled grading of either the quantum well width or the donor concentration in a direction perpendicular to the growth axis. The presence of two-dimensional electron gas of varying concentration produced by the graded modulation doping was evidenced by observation of negatively charged exciton-electron complexes (X¯).
    Źródło:
    Acta Physica Polonica A; 1997, 92, 5; 1063-1066
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Half-Parabolic Quantum Wells of Diluted Magnetic Semiconductor Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te
    Autorzy:
    Kutrowski, M.
    Wojtowicz, T.
    Cywiński, G.
    Karczewski, G.
    Janik, E.
    Dynowska, E.
    Kossut, J.
    Kossacki, P.
    Fiederling, R.
    Pfeuffer-Jeschke, A.
    Ossau, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968307.pdf
    Data publikacji:
    1997-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Pp
    78.66.Hf
    Opis:
    We report on magnetooptical studies of MBE-grown half-parabolic CdTe/Cd$\text{}_{x}$Mn$\text{}_{1-x}$Te quantum well structures. The value of the valence band offset Q$\text{}_{v}$=0.4 ± 0.05 was determined by comparing energies of optical transitions in the absence of a magnetic field with model calculations. This value was verified by fitting the observed spin splitting of the lowest heavy hole (hh) state. We discuss also the temperature dependence of Q$\text{}_{v}$.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 5; 887-890
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    High Power Continuous Wave Blue InAlGaN Laser Diodes Made by Plasma Assisted MBE
    Autorzy:
    Skierbiszewski, C.
    Siekacz, M.
    Wiśniewski, P.
    Perlin, P.
    Feduniewicz-Żmuda, A.
    Cywiński, G.
    Smalc, J.
    Grzanka, S.
    Grzegory, I.
    Leszczyński, M.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047002.pdf
    Data publikacji:
    2006-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Px
    85.35.Be
    42.60.By
    73.21.Cd
    Opis:
    Room temperature, continuous wave operation of InGaN multi-quantum wells laser diodes made by rf plasma assisted molecular beam epitaxy at 411 nm wavelength is demonstrated. The threshold current density and voltage were 4.2 kA/cm$\text{}^{2}$ and 5.3 V, respectively. High optical power output of 60 mW was achieved. The lifetime of these laser diodes exceeds 5 h with 2 mW of optical output power. The laser diodes are fabricated on low dislocation density bulk GaN substrates, at growth conditions which resembles liquid phase epitaxy. We demonstrate that relatively low growth temperatures (600-700°C) pose no intrinsic limitations for fabrication of nitride optoelectronic components by plasma assisted molecular beam epitaxy.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 3; 345-351
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Enhancement of Intersubband Absorption in GaInN/AlInN Quantum Wells
    Autorzy:
    Cywiński, G.
    Skierbiszewski, C.
    Siekacz, M.
    Kryśko, M.
    Feduniewicz-Żmuda, A.
    Gladysiewicz, M.
    Kudrawiec, R.
    Misiewicz, J.
    Nevou, L.
    Kheirodin, N.
    Julien, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811923.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Fs
    78.67.De
    68.65.Fg
    73.21.Fg
    81.15.Hi
    Opis:
    GaInN/AlInN multiple quantum wells were grown by RF plasma-assisted molecular beam epitaxy on (0001) GaN/sapphire substrates. The strain-engineering concept was applied to eliminate cracking effect and to improve optical parameters of intersubband structures grown on GaN substrates. The high quality intersubband structures were fabricated and investigated as an active region for applications in high-speed devices at telecommunication wavelengths. We observed the significant enhancement of intersubband absorption with an increase in the barrier thickness. We attribute this effect to the better localization of the second electron level in the quantum well. The strong absorption is very important on the way to intersubband devices designed for high-speed operation. The experimental results were compared with theoretical calculations which were performed within the electron effective mass approximation. A good agreement between experimental data and theoretical calculations was observed for the investigated samples.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1093-1099
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Crack Free GaInN/AlInN Multiple Quantum Wells Grown on GaN with Strong Intersubband Absorption at 1.55μm
    Autorzy:
    Cywiński, G.
    Skierbiszewski, C.
    Feduniewicz-Żmuda, A.
    Siekacz, M.
    Nevou, L.
    Doyennette, L.
    Julien, F. H.
    Prystawko, P.
    Kryśko, M.
    Grzanka, S.
    Grzegory, I.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2046911.pdf
    Data publikacji:
    2006-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.65.Fg
    78.66.-w
    78.67.De
    78.40.Fy
    81.15.Hi
    Opis:
    Crack free GaInN/AlInN multiple quantum wells were grown by rf plasma-assisted molecular beam epitaxy on (0001) GaN/sapphire substrates. The strain-engineering concept was applied to eliminate cracking effect for growth of intersubband structures on GaN. Indium contained ternary compounds of barrier and well layers are contrary strained to the substrate material. A series of crack free GaInN/AlInN intersubband structures on (0001) GaN was fabricated and investigated. The assumed composition and layered structure were confirmed by room temperature photoluminescence and X-ray diffraction measurements. The intersubband measurements were done in multipass waveguide geometry by applying direct intersubband absorption and photoinduced intersubband absorption measurements. The optimized structure design contains forty periods of Si-doped GaInN/AlInN quantum wells and exhibits strong intersubband absorption.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 2; 175-181
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-13 z 13

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