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Wyszukujesz frazę "Bożek, K." wg kryterium: Autor


Tytuł:
Patriotyzm to miłość Ojczyzny : Wizja Polskiego Patriotyzmu -- konferencja w Sejmie RP
Autorzy:
"Janka""Urszula""Teresa" Kulesza-Kurowska, Janina.
Szatanik, Dominika.
Bożek, Diana.
Szycht, Aleksander M.
Markowski, Damian K.
Powiązania:
Biuletyn Informacyjny Światowy Związek Żołnierzy Armii Krajowej. Zarząd Główny, 2007, nr 2, s. 1-3
Data publikacji:
2007
Tematy:
Konferencja naukowa nt.: Wizja polskiego patriotyzmu (29.11.2006; Warszawa)
Patriotyzm materiały konferencyjne
Opis:
Głosy w dyskusji.
Fot.
Dostawca treści:
Bibliografia CBW
Artykuł
Tytuł:
FIR Magnetooptical Measurements on MOCVD Grown InAs
Autorzy:
Andrearczyk, T.
Karpierz, K.
Bożek, R.
Stępniewski, R.
Grynberg, M.
Powiązania:
https://bibliotekanauki.pl/articles/1968009.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.-m
71.55.-i
72.40.+w
Opis:
In this paper we report results of magnetooptical measurements done on standard InAs MOCVD layers grown on GaAs. Extremely narrow lines (half-widths of the order of 20 mT) - narrower than found by other authors in high quality MBE InAs epilayers on GaAs - as well as the lines of typical half-widths have been found both in the photoconductivity spectra and in the transmission spectra. A detailed comparison with the theoretical dependence of shallow donor and Landau level energies on magnetic field leads to the conclusion that they originate from cyclotron resonance and impurity-shifted cyclotron resonance transitions in that material.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 699-703
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Some aspects of Intelligent Transport System auditing
Autorzy:
Bazan, M.
Bożek, M.
Ciskowski, P.
Halawa, K.
Janiczek, T.
Kozaczewski, P.
Rusiecki, A.
Powiązania:
https://bibliotekanauki.pl/articles/393760.pdf
Data publikacji:
2015
Wydawca:
Polskie Stowarzyszenie Telematyki Transportu
Tematy:
intelligent transportation
system audit
travel time prediction
fundamental diagram
inteligentny transport
audit systemu
przewidywanie czasu podróży
diagram fundamentalny
Opis:
Nowadays, in urbanized areas one of the most important matters is to determine a priori the time of driving from one zone of the city to another at various times of the day. The problem of travel time prediction is crucial in Intelligent Transportation Systems. The solution to this problem is a foundation of any route guidance system that will redirect drivers to their target destination via routes that have a lighter traffic load and thus higher travel velocity. In this paper is present a concept of a statistical methodology, developed by the ArsNumerica Group, that enables a quantity audit a travel time prediction algorithm. The methodology assumes that we are given database records of vehicles recognized by their unique identifier as well as duration times for which the messages with the predicted travel time are displayed VMS. the second aspect of ITS auditing considered in this paper is a placement of video cameras to measure vehicle stream velocity. Inappropriate camera location results in the fact that the stream velocity measured by them has a low usefulness for travel time prediction.
Źródło:
Archives of Transport System Telematics; 2015, 8, 3; 3-8
1899-8208
Pojawia się w:
Archives of Transport System Telematics
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of a real radio channel parameters on the quality of the OFDM signal in mobile applications. Estimation of parameters of the channel as an element of improvement of the transmission quality
Autorzy:
Bożek, K.
Powiązania:
https://bibliotekanauki.pl/articles/385028.pdf
Data publikacji:
2007
Wydawca:
Sieć Badawcza Łukasiewicz - Przemysłowy Instytut Automatyki i Pomiarów
Tematy:
OFDM
radio transmission
multi-path
radio channel estimation
Opis:
The article deals with issues related to transmission of a signal with the OFDM multitude modulation in a real radio channel. Following short characteristics of the OFDM modulation, the article includes an analysis of typical radio channels from the angle of amplitude and phase on the basis of delay profiles referred to in the literature. The study contains results of simulated receipt of the OFDM signal in the multi-path conditions. On the basis of diagrams of constellation of the modulation symbols, the author presented differences in the quality of the signal before and after the phase correction and improvement in the quality due to application of cyclic prefix. Influence of noise as well as the fact that the terminals are non-stationary on operation of the frequency characteristics estimation algorithm was analyzed. At the end, an example was presented of application of a linear model of estimation of phase characteristics of a channel with the shift in frequency occurring in mobile systems as a consequence of the Doppler effect being compensated.
Źródło:
Journal of Automation Mobile Robotics and Intelligent Systems; 2007, 1, 3; 64-68
1897-8649
2080-2145
Pojawia się w:
Journal of Automation Mobile Robotics and Intelligent Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
GaSb Dots Grown on GaAs Surface by Metalorganic Chemical Vapour Deposition
Autorzy:
Bożek, R.
Babiński, A.
Baranowski, J. M.
Stępniewski, R.
Klusek, Z.
Olejniczak, W.
Starowieyski, K.
Wróbel, J.
Powiązania:
https://bibliotekanauki.pl/articles/1934054.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
68.55.-a
Opis:
We report metaloorganic chemical vapour deposition growth of an anisotropic GaSb islands on GaAs (001) surface with a typical dimensions around 200 nm. Results of investigations employing scanning electron microscope, scanning tunnelling microscope and ph9tocapacitance are presented.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 974-976
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Highly Compensated GaAs Crystal Obtained by Molecular CO Doping
Autorzy:
Bożek, R.
Korona, K. P.
Nowak, G.
Wasik, D.
Słupiński, T.
Kaczor, P.
Powiązania:
https://bibliotekanauki.pl/articles/1929707.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
78.55.-m
78.20.Jq
Opis:
GaAs:C crystal was grown by liquid encapsulated Czochralski technique with large partial pressure of CO in ambient atmosphere p$\text{}_{CO}$/p$\text{}_{tot}$ = 0.2 and investigated using near and infrared absorption, photoluminescence, photoconductivity, photo-induced current transient spectroscopy and photo-Hall measurements. High resistivity of the crystal was found in electrical measurements (10$\text{}^{7}$ Ω cm, the Fermi level at 0.67 eV below conduction band at 300 K). Local vibrational mode revealed increased concentration of carbon acceptor and presence of oxygen related complexes. Photoluminescence spectra were dominated by two bands with peak energies at 1.49 eV and 0.8 eV. The near band gap emission shifts with excitation intensity up to 4 meV/decade. In photocurrent spectrum a strong photoionization band with E = 0.55 eV is observed.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 669-672
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Viral hepatitis C in Poland in the Silesian Province between 2005–2014
Autorzy:
Braczkowska, B.
Kowalska, M.
Barański, K.
Mendera-Bożek, U.
Powiązania:
https://bibliotekanauki.pl/articles/2081675.pdf
Data publikacji:
2018
Wydawca:
Instytut Medycyny Wsi
Tematy:
Silesia
hepatitis C
epidemiology
Polska
Opis:
Introduction and objective. Viral hepatitis C remains one of the major health and social problems related to infectious diseases in Poland. The aim of the study was assessment of the registered changes in the incidence of HCV in the Silesian Province of western Poland during the last 10 years, including age, gender and place of residence. Materials and method. A retrospective analysis was performed of the HCV incidence between 2005–2014 in the Silesian Province. The crude and standardized incidence rates were calculated for males and females in each year. Subsequently, the territorial diversity of the epidemiological situation in the districts was assessed by calculating the average incidence rate over the entire study period. Results. Incidence rates calculated according to the case definition of 2005 ranged between 5.95/100000 in 2005 to 10.36/100000 in 2014. Analysis of the structure of the incidence showed that during the analyzed period, the majority of hepatitis C cases were related to males (52.5%) rather than females (47.5%), and hepatitis C was more prevalent in younger males (aged 20–49) and older females (aged over 50). After excluding the effect of age, the standardized rates were twice as low, compared to the crude incidence rates. Conclusions. An increase in the HCV incidence rate was observed in males and females. It is obvious that the detection of additional cases will entail the need to provide funding for the treatment of more patients, which should be included in the map of regional health needs in the coming years. Our study demonstrates the temporal and spatial variability of HCV incidence in the Silesian Province of Poland. The observed increase in the crude and standardized rates suggests that the current registry system of HCV in Poland is more effective now. The current situation is comparable with the data in other EU countries.
Źródło:
Annals of Agricultural and Environmental Medicine; 2018, 25, 2; 224-228
1232-1966
Pojawia się w:
Annals of Agricultural and Environmental Medicine
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Localization Effects in GaN/AlGaN Quantum Well - Photoluminescence Studies
Autorzy:
Chwalisz, B.
Wysmołek, A.
Bożek, R.
Korona, K. P.
Stępniewski, R.
Knap, W.
Pakuła, K.
Baranowski, J. M.
Grandjean, N.
Massies, J.
Prystawko, P.
Grzegory, I.
Powiązania:
https://bibliotekanauki.pl/articles/2036024.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
73.20.-r
73.21.-b
74.40.+k
Opis:
Exciton localization in GaN/AlGaN quantum well structures is studied by photoluminescence. An anomalous temperature behavior of the photoluminescence from the quantum well is observed. With increasing temperature the energy position of the excitonic emission line first decreases up to 20 K, then increases, reaching a maximum around 90 K, and then decreases again in the higher temperature range. The observed behavior is discussed in terms of localization at the interface potential fluctuations. It is argued that the temperature activated migration and subsequent release of the excitons from traps that occurs between 20 K and 90 K are responsible for the observed S-like shape of the energy dependence. The obtained results allow a direct characterization of the energy fluctuations present in GaN/AlGaN quantum wells grown by different techniques.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 573-578
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spatially Resolved Micro-Luminescence from GaN/AlGaN Quantum Dots
Autorzy:
Chwalisz, B.
Wysmołek, A.
Bożek, R.
Stępniewski, R.
Pakuła, K.
Kossacki, P.
Golnik, A.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/2038084.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.66.Fd
78.67.Hc
75.75.+a
68.65.Hb
Opis:
We report on the optical experiments performed on low density GaN/AlGaN quantum dots grown on sapphire substrate using SiN during the growth process. The existence of quantum dots in the investigated structures was confirmed by atomic force microscopy. Although macro-luminescence of the investigated structures consist of broad emission lines the micro-photoluminescence experiments performed with the spatial resolution of 0.25 μm revealed sharp emission lines from the individual quantum dot in the energy range of 3.20-3.55 eV. It is shown that the magnetic fields up to 7 T do not influence significantly the electronic states of the dots.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 517-521
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and optical properties of boron nitride grown by MOVPE
Autorzy:
Dąbrowska, A.
Pakuła, K.
Bożek, R.
Rousset, J.
Ziółkowska, D.
Gołasa, K.
Korona, K.
Wysmołek, A.
Stępniewski, R.
Powiązania:
https://bibliotekanauki.pl/articles/1160531.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
78.30.Fs
78.20.-e
Opis:
Boron nitride layers were grown on sapphire substrate by metal organic vapor phase epitaxy system that was originally designed for growth of GaN. Structures were characterized by scanning electron microscopy, atomic force microscopy, the Raman spectroscopy, absorption and time resolved photoluminescence. Presented results confirm successful deposition of BN layers and gives information about basic properties of the material. The Raman line at 1370 cm^{-1} and absorption edges at 5.6-5.9 eV were observed which is related to hexagonal phase.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-129-A-131
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical and Electrical Studies of FR1 and FR2 Defects in GaAs
Autorzy:
Dwiliński, R.
Palczewska, M.
Kaczor, P.
Korona, K.
Wysmołek, A.
Bożek, R.
Kamińska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1920972.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
78.50.Ge
76.30.Mi
Opis:
The systematic EPR, optical absorption, photoluminescence and thermally stimulated current studies of acceptor defects in bulk GaAs were performed. For the first time, parallel EPR and optical absorption experiments allowed to find the absorption spectrum due to the photoionization of FR1 defect with the threshold at 0.19 eV. Photoluminescence studies showed two families of bands in the energy range of about 1.25 to 1.35 eV. We tentatively ascribed them to FR1 and FR2 complexes with shallow donors. Thermally stimulated current measurements showed two peaks at 90 K and 110 K assigned to FR1 and FR2 respectively.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 613-616
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Properties of Molybdenum Disulfide $(MoS_2)$
Autorzy:
Gołasa, K.
Grzeszczyk, M.
Korona, K.
Bożek, R.
Binder, J.
Szczytko, J.
Wysmołek, A.
Babiński, A.
Powiązania:
https://bibliotekanauki.pl/articles/1399110.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
63.22.-m
71.35.-y
78.20.-e
78.30.-j
Opis:
Research of a monolayer and a bulk $MoS_2$ is reported. The room temperature Raman spectra of the natural $MoS_2$ crystals for the both resonant (632.8 nm) and the non-resonant (532 nm) excitation are presented. The apparent differences observed in the spectra from the bulk and the one monolayer $MoS_2$ are discussed. In particular, the feature due to a first order scattering involving the LA(M) phonon in the resonance Raman spectrum of the one monolayer $MoS_2$ was observed and explained in terms of the disorder in the natural crystal. The disorder is also documented by the line-shape of the room-temperature photoluminescence spectra observed from both the bulk and the one monolayer $MoS_2$.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 849-851
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Absorption and Raman Scattering Studies of Few-Layer Epitaxial Graphene Grown on 4H-SiC Substrates
Autorzy:
Grodecki, K.
Drabińska, A.
Bożek, R.
Wysmołek, A.
Korona, K.
Strupiński, W.
Borysiuk, J.
Stępniewski, R.
Baranowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1791292.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Tr
78.40.Ri
78.30.Na
63.20.dd
63.20.kd
Opis:
Optical absorption and Raman scattering studies of few-layer epitaxial graphene obtained by high temperature annealing of carbon terminated face of 4H-SiC(000-1) on-axis substrates are presented. Changing the pressure and annealing time, different stages of the graphene formation were achieved. Optical absorption measurements enabled us to establish average number of graphene layers covering the SiC substrate. Raman scattering experiments showed that integrated intensity of the characteristic 2D peak positively correlated with the number of graphene layers deposited on the SiC substrate. The spectral width of the 2D peak was found to decrease with the number of the deposited graphene layers.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 835-837
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Raman Studies of Defects in Graphene Grown on SiC
Autorzy:
Grodecki, K.
Bożek, R.
Borysiuk, J.
Strupinski, W.
Wysmolek, A.
Stępniewski, R.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/2047919.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.48.Gh
78.30.Fs
Opis:
The Raman scattering studies of multi-layer graphene obtained by high temperature annealing of carbon terminated face of 4H-SiC(000-1) substrates are presented. Intensity ratio of the D and G bands was used to estimate the average size of the graphene flakes constituting carbon structures. The obtained estimates were compared with flake sizes from atomic force microscopy data. We found that even the smallest structures observed by atomic force microscopy images are much bigger than the estimates obtained from the Raman scattering data. The obtained results are discussed in terms of different average flake sizes inside and on the surface of the multi-layer graphene structure, as well as different type of defects which would be present in the investigated structures apart from edge defects.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 595-596
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical and Electrical Measurements of Low-Temperature InAlAs
Autorzy:
Korona, K. P.
Wysmołek, A.
Bożek, R.
Kamińska, M.
Baranowski, J. M.
Weber, E. R.
Powiązania:
https://bibliotekanauki.pl/articles/1923833.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
73.60.Br
78.55.Cr
Opis:
Photoluminescence, photocurrent, thermally stimulated current and photoinduced current transient spectroscopy measurements done on molecular beam epitaxy In$\text{}_{0.52}$Al$\text{}_{0.48}$As layer, lattice matched to InP are reported. The investigated layers were grown on semi-insulating InP wafers, at temperature range from 215 to 450°C. It was found that the Fermi level was pinned to a dominant midgap center (most likely similar to EL2 center). Moreover, there were at least 7 other defects but with much smaller concentrations. Their activation energies were equal to 0.076, 0.11, 0.185, 0.295, 0.32 and 0.40 eV. The layers exhibited a very low luminescence and a small photocurrent.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 825-828
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

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