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    Tytuł:
    Optical Spectroscopy of Quantum Dots in High Magnetic Fields
    Autorzy:
    Babiński, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2046951.pdf
    Data publikacji:
    2006-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.Hc
    78.55.Cr
    75.75.+a
    Opis:
    Optical spectroscopy measurements of single InAs/GaAs self-assembled quantum dots have been performed. The multiexcitonic emission from the s-, p-, and d-shells of a single dot is observed and investigated in magnetic field up to 28 T. The Zeeman splitting of the s-shell excitons has been found to depend on the dot morphology. While the energy-splitting in flat (2 nm height) dots linearly increases with magnetic field, its significant non-linearity is observed for larger in size, tall (4 nm height) dots. The effect of magnetic field on the orbital motion of carriers in dots has also been investigated. It has been found that the modified Fock-Darwin pattern explains the observed evolution of the emission from highly-excited single tall quantum dot.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 3; 275-286
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Orientation of Metastable EL2 under Uniaxial Stress
    Autorzy:
    Babiński, A.
    Wysmołek, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1931913.pdf
    Data publikacji:
    1995-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    72.20.Fr
    72.80.Ey
    Opis:
    Results of electrical resistivity and Hall measurements of n-type GaAs under uniaxial stress along [111] direction performed at low temperature are presented. Alter the transformation of the EL2 defect into its metastable configuration, a stress-induced increase in electrical resistivity related to the capture of electrons by the acceptor state of the metastable EL2([EL2*]$\text{}_{-}\text{}_{/}\text{}_{0}$) was observed. It was found that the stress-induced increase in resistivity depended on the method of EL2-photoquenching. The observed effects are explained as the reorientation of EL2* centers in the crystal. The stress coefficients of the triple degenerate and the single degenerate sublevels of the [EL2*]$\text{}_{-}\text{}_{/}\text{}_{0}$ are found to be equal to -17 meV/GPa and -41 meV/GPa.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 1; 137-140
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electrical Properties of an Acceptor-like State of Metastable EL2 in n-type GaAs under Uniaxial Stress
    Autorzy:
    Babiński, A.
    Wysmołek, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1924252.pdf
    Data publikacji:
    1992-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    72.20.Fr
    72.80.Ey
    Opis:
    The electrical resistivity and deep level transient spectroscopy measurements of n-type GaAs under uniaxial stress for [100] and [111] directions at low temperatures are presented. After the transformation of EL2 to its metastable state the stress induced strong anisotropy in the increase in resistivity was observed. The observed splitting of the acceptor-like state of metastable EL2 implies the trigonal symmetry of that defect.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 5; 908-910
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Passivation of a Bulk Defect E$\text{}_{c}$-0.22 eV in GaAs by Contact with Phosphoric Acid
    Autorzy:
    Babiński, A.
    Gołdys, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1886500.pdf
    Data publikacji:
    1991-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.70.At
    81.60.Cp
    71.55.Eq
    Opis:
    The E$\text{}_{c}$-0.22 eV trap in Horizontal Bridgman undoped n-type GaAs may be passivated by contact with phosphoric acid for 8 hours at room temperature. Isochronal annealing, at around 250°C for 1 hour resulted in the partial recovery of this defect. The possible mechanisms of E$\text{}_{c}$-0.22 eV trap passivation are proposed.
    Źródło:
    Acta Physica Polonica A; 1991, 79, 2-3; 277-280
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Deep Level Transient Spectroscopy Measurements of an Acceptor-like State of Metastable EL2 in GaAs and GaAsP
    Autorzy:
    Babiński, A.
    Wysmołek, A.
    Słupiński, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1929708.pdf
    Data publikacji:
    1993-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    Opis:
    The results of deep level transient spectroscopy measurements of an acceptor-like state of metastable EL2 in GaAs and GaAs$\text{}_{0.97}$P$\text{}_{0.03}$ are presented. The uniaxial stress in GaAs was applied in order to find the deep leve1 transient spectroscopy signal. It was found that the deep level transient spectroscopy signal depended on the stress direction. In GaAs$\text{}_{0.97}$P$\text{}_{0.03}$ the deep level transient spectroscopy peak related to an acceptor-like state of metastable EL2 was observed without external stress.
    Źródło:
    Acta Physica Polonica A; 1993, 84, 4; 673-676
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Pressure Dependence of Transition Metal-Related Levels in GaAs
    Autorzy:
    Babiński, A.
    Baj, M.
    Hennel, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1886748.pdf
    Data publikacji:
    1991-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    62.50.+p
    Opis:
    The hydrostatic pressure coefficients of V$\text{}^{3+}$ $\text{}^{/}$ $\text{}^{2+}$ acceptor level in bulk GaAs and of the 0.48 eV trap (related to Ni$\text{}^{2+}$ $\text{}^{/}$ $\text{}^{1+}$ double acceptor level) in VPE GaAs were measured by means of the DLTS technique. The obtained values are 94 meV/GPa and 196 meV/GPa relative to the bottom of the conduction band. For Ni$\text{}^{2+}$ $\text{}^{/}$ $\text{}^{1+}$ level the strong pressure dependence of the capture cross-section activation energy (60 meV/GPa) was also observed.
    Źródło:
    Acta Physica Polonica A; 1991, 79, 2-3; 323-327
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Acceptor-Like Level of the EL2 Defect in its Metastable Configuration
    Autorzy:
    Dreszer, P.
    Baj, M.
    Babiński, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1879457.pdf
    Data publikacji:
    1991-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    78.50.Ge
    Opis:
    This paper presents for the first time the evident experimental confirmation that EL2 defect, while being in its metastable configuration, traps under hydrostatic pressure an additional electron, i.e. the acceptor-like (EL2*)$\text{}^{0}$ $\text{}^{/}$ $\text{}^{-}$ level enters the energy gap under pressure. We propose that in n-GaAs the EL2 thermal recovery takes always place via the (EL2*)$\text{}^{-}$ state.
    Źródło:
    Acta Physica Polonica A; 1991, 79, 1; 129-132
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Intershell Exchange Interaction in Charged GaAlAs Quantum Dots
    Autorzy:
    Molas, M.
    Nicolet, A.
    Potemski, M.
    Babiński, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399082.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.Hc
    71.35.-y
    78.55.Cr
    71.70.Gm
    Opis:
    Optical anisotropy of charged excitons and biexcitons related to the single-particle s- and p-shell emission in GaAlAs/AlAs quantum dots is investigated. The polarization-dependence and time-resolved micro-photoluminescence measurements were performed. Cross-correlation measurements were used to identify the ladder of excitonic states and allowed us to show two cascade pathways, including the spin singlet and triplet states of charged excitons and biexcitons. The fine structure of the studied states is described and analysed in terms of electron-electron, hole-hole, and electron-hole exchange interactions.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 785-787
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Hydrostatic Pressure Spectroscopy of the Vanadium Luminescence in GaAs
    Autorzy:
    Wysmołek, A.
    Bożek, R.
    Babiński, A.
    Hennel, A. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1923845.pdf
    Data publikacji:
    1992-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    78.55.Cr
    Opis:
    We report luminescence measurements of the intracenter transition $\text{}^{3}$T$\text{}_{2}$ → $\text{}^{3}$A$\text{}_{2}$ of the V$\text{}^{3+}$(3d$\text{}^{2}$) charge state in semi-insulating GaAs under hydrostatic pressure up to 0.8 GPa at liquid helium temperature. The hydrostatic pressure coefficient of the zero-phonon line is found to be equal to 6.9 ± 0.2 meV/GPa. This result enables us to determine the Huang-Rhys parameter, which characterizes the coupling to the symmetric mode of vibration, as S$\text{}_{A}$ = 1.4 ± 0.1. Using this parameter, computer simulation leading to a reconstruction of the shape of both luminescence and corresponding absorption spectra were performed.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 5; 837-840
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Dynamics of Photoexcited Carriers in GaInAs/GaAs Quantum Dots
    Autorzy:
    Ilczuk, E.
    Korona, K. P.
    Babiński, A.
    Kuhl, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/2028722.pdf
    Data publikacji:
    2001-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.40.+w
    78.47.+p
    78.67.-n
    Opis:
    We present photocurrent and time-resolved photoluminescence investigations of AlGaAs/GaInAs/GaAs structures containing GaInAs/GaAs self-assembled quantum dots. The high electrical field in those devices significantly influences carrier dynamics. The photocurrent spectra show a double peak with maxima at 1.40 and 1.47 eV (at 80 K). These maxima are due to the GaInAs wetting layer (higher) and the quantum dots (lower). The photoluminescence spectra comprise weak excitonic luminescence from GaAs at 1.504 eV (at 80 K) and stronger and broad emission from the Ga$\text{}_{0.4}$In$\text{}_{0.6}$As quantum dots. At 300 K, the quantum dots emission has a lifetime of 1.1 ns and has a maximum at an energy of 1.38 eV. By analysis of both experiments, we can separate the influence of different radiative and nonradiative recombination processes. So, the tunneling rate: r$\text{}_{T}$=0.5 ns$\text{}^{-1}$ and the radiative recombination rate in the quantum dots: r$\text{}_{RQD}$=0.4 ns$\text{}^{-1}$ have been determined. The high tunneling probability (due to the influence of the built-in electric field) reveals that the tunneling effect is important for the recombination and transport processes in our structures.
    Źródło:
    Acta Physica Polonica A; 2001, 100, 3; 379-386
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Dynamics of Excitation Transfer Inside InAs/GaAs Quantum Dot System
    Autorzy:
    Korona, K. P.
    Babiński, A.
    Raymond, S.
    Wasilewski, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/2046919.pdf
    Data publikacji:
    2006-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.47.+p
    72.20.Jv
    78.67.Hc
    78.55.Cr
    Opis:
    We present time-resolved photoluminescence investigations of InAs/GaAs structures containing quantum dots with the ground state at 1.43 eV. State filling effect and a Pauli blocking effect were clearly observed. These effects significantly influenced dynamics of excitation transfer from upper to lower state inside a dot leading to non-exponential dynamics. Numerical model based on nonlinear rate equations was proposed. The model described well the experimental data providing values of: lifetime of the ground state 0.53±0.03 ns, lifetime of excited state (when the ground state is full) 1.1±0.2 ns, and internal relaxation time (when the ground state is empty) 0.07±0.01 ns.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 2; 219-224
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Intersubband Scattering on the Magnetic Field Dependence of the Conductivity Tensor
    Autorzy:
    Siwiec-Matuszyk, J.
    Baj, M.
    Babiński, A.
    Kasprzak, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/2046999.pdf
    Data publikacji:
    2006-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.My
    73.50.Jt
    73.21.Fg
    73.61.Ey
    Opis:
    In this paper we show that intersubband scattering can lead to apparent inconsistency of the experimental results obtained by means of classical and quantum transport measurements and this discrepancy is entirely connected with the usage of classical formulae to describe magnetic field dependence of a conductivity tensor. We prove that there is no contradiction in our observations and that the models describing quantum oscillations and magnetic-field dependence of the conductivity tensor, which are present in the literature, complement each other.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 3; 337-344
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetic Field Effect on the Excitation Spectrum of a Neutral Exciton in a Single Quantum Dot
    Autorzy:
    Molas, M.
    Nicolet, A.
    Piętka, B.
    Babiński, A.
    Potemski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1375688.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.Hc
    71.35.-y
    78.55.Cr
    Opis:
    Excitation-energy-dependent magnetospectroscopic measurements of a single GaAlAs/AlAs quantum dot were performed. A significant effect of the excitation energy on the photoluminescence spectra is reported. The photoluminescence excitation spectroscopy has been used to investigate the excitation spectrum of a single electron-hole pair - a neutral exciton in magnetic field up to 14 T. The observed resonances exhibit diamagnetic shift characteristic of an s-shell related emission. In our opinion, the creation of excited complexes involving an excited hole and a ground electron is responsible for the process.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1066-1068
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fine Structure of Neutral Excitons in Single GaAlAs Quantum Dots
    Autorzy:
    Molas, M.
    Gołasa, K.
    Piętka, B.
    Potemski, M.
    Babiński, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1403612.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.67.Hc
    Opis:
    Optical anisotropy of neutral excitons in GaAlAs/AlAs quantum dots is investigated. Low-temperature polarization-sensitive photoluminescence measurements of single quantum dots are performed. It is found that neutral excitons (X) in the quantum dots exhibit a fine structure splitting. The fine structure splitting ranges from 10 μeV to 100 μeV and correlates with the X energy. The polarization axis of the fine structure splitting is well oriented along [110] crystallographic direction of a substrate. The orientation is attributed to the elongation of GaAlAs/AlAs quantum dots in the [110] direction of the substrate.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 988-990
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Confocal Microscope Studies of $MoS_{2}$ Layer Thickness
    Autorzy:
    Grzeszczyk, M.
    Gołasa, K.
    Piętka, B.
    Babiński, A.
    Szczytko, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1377207.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.20.Ci
    63.20.dd
    78.30.-j
    78.66.Li
    Opis:
    We have been studying micro-luminescence of various exfoliated $MoS_{2}$ flakes using a confocal microscope. A crucial issue is to determine thickness of the investigated layer. The common way - using atomic force microscopy, electron microscopy or the Raman spectroscopy - requires moving the sample out from the confocal microscope experimental setup and looking for a particular exfoliated flake hidden among thousands of others. In order to preliminarily determine thickness of investigated layers we have performed a study on optical reflectivity and compared the results with the Raman spectroscopy investigations. In this way we were able to calibrate our experimental setup. Optical measurements are much faster than the Raman spectroscopy and can give a good estimation of $MoS_{2}$ thickness.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1207-1208
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Localization of Excitons in the Wetting Layer Accompanying Self-Assembled InAs/GaAs Quantum Dots
    Autorzy:
    Babinski, A.
    Raymond, S.
    Wasilewski, Z.
    Lapointe, J.
    Potemski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2038091.pdf
    Data publikacji:
    2004-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.35.Pq
    71.35.Ji
    71.70.Ej
    Opis:
    A wetting layer is a narrow, highly strained quantum well, which accompanies quantum dots grown in Stranski-Krastanow mode. Its importance for a full description of the quantum dots properties has recently been pointed out. It has been shown for example that excitons can be localized by potential fluctuations in the wetting layer. This is equivalent to the formation of "natural" quantum dots in the WL. Excitonic emission from the single dots formed in the wetting layer accompanying the InAs/GaAs self-assembled quantum dots has been investigated in a high magnetic field (up to 23 T). Quadruplet splitting of the investigated emission line has been observed. The attribution of the emission line to the recombination of negatively charged exciton is discussed.
    Źródło:
    Acta Physica Polonica A; 2004, 105, 6; 547-552
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Quantum Confinement in InAs/GaAs Systems with Self-Assembled Quantum Dots Grown Using In-Flush Technique
    Autorzy:
    Molas, M.
    Kuldová, K.
    Borysiuk, J.
    Wasilewski, Z.
    Babiński, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048050.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.67.Hc
    Opis:
    The effect of In-flush technique application to the MBE-grown structure with self-assembled quantum dots is investigated in this work. The microphotoluminescence from structures with the InAs/GaAs dots grown with and without the In-flush has been investigated. We focus our attention on "not fully developed" dots, which can be clearly distinguished in the spectrum. The dots have also been identified in the transmission electron microscopy analysis of the structures. The In-flush does not influence a broad energy range of those features. Instead we have found that the anisotropic exchange energy splitting of neutral excitons confined in those in the structure grown with In-flush is substantially lower that the splitting in the structure with no In-flush. This observation confirms that the In-flush leads not only to better uniformity of self-assembled quantum dots but also to reduction of lateral potential, anisotropy, which is believed to result in the neutral exciton splitting.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 624-626
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Hydrostatic-Pressure Deep Level Transient Spectroscopy Study of the Heteroantisite Antimony Level in GaAs
    Autorzy:
    Babiński, A.
    Przybytek, J.
    Baj, M.
    Omling, P.
    Samuelson, L.
    Słupiński, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1923855.pdf
    Data publikacji:
    1992-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    62.50.-p
    Opis:
    We present some preliminary results of the first hydrostatic-pressure study of the electronic level related to the Sb-heteroantisite defect in GaAs. We studied two kinds of n-type GaAs samples doped with antimony: bulk samples grown by liquid encapsulated Czochralski method and thin layers grown by metalorganic chemical vapour deposition technique. We found strongly nonlinear pressure dependence of the activation energy of the emission rate for the level. Moreover, the results obtained for the bulk material were fairly different from those obtained for thin metalorganic chemical vapour deposition layers. The possible explanation of this difference is presented.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 5; 841-844
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Raman spectroscopy of shear modes in a few-layer MoS₂
    Autorzy:
    Gołasa, K.
    Grzeszczyk, M.
    Zinkiewicz, M.
    Nogajewski, K.
    Potemski, M.
    Wysmołek, A.
    Babiński, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1160654.pdf
    Data publikacji:
    2016-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.20.-e
    87.64.Je
    63.20.Kr
    Opis:
    We study low frequency vibrational modes in atomically thin molybdenum disulfide (MoS₂) by means of the Raman scattering spectroscopy. A shear mode related to rigid interlayer vibrations is identified. Its energy evolution with the increasing number of layers is well described using a linear chain model with only nearest neighbor interactions. The resulting force constant (Kₓ = 2.7 × 10¹⁹ N/m³) corresponds well to the previously published data.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 1a; A-132-A-134
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Fine Structure of a Triexciton in Single InAs/GaAs Quantum Dots
    Autorzy:
    Molas, M.
    Gołasa, K.
    Furman, M.
    Lapointe, J.
    Wasilewski, Z.
    Potemski, M.
    Babiński, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1403615.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.67.Hc
    Opis:
    Results of experimental study of multiexcitonic emission related to the p-shell of single self-assembled InAs/GaAs quantum dots are presented. Optical properties of a first emission line to appear from the p-shell of a strongly excited quantum dots are investigated using low-temperature polarization-sensitive micro-photoluminescence measurements. The emission line is attributed to the recombination of a complex of three electrons and holes confined in a dot (neutral triexciton), 3X. It is found that the emission consists of two linearly polarized components and the fine structure splitting is larger than the respective splitting of a neutral exciton. The optical anisotropy of the 3X emission is related to the anisotropy of the quantum dot localizing potential. The axis of the 3X optical anisotropy changes from dot to dot covering broad range within ± 50 degrees with respect to the axis defined by the optical anisotropy of a neutral exciton (X). Possible origin of the deviation is discussed.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 991-993
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Effect of Substrate on Vibrational Properties of Single-Layer MoS₂
    Autorzy:
    Gołasa, K.
    Molas, M.
    Nogajewski, K.
    Grzeszczyk, M.
    Zinkiewicz, M.
    Potemski, M.
    Babiński, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398570.pdf
    Data publikacji:
    2016-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    63.22.-m
    71.35.-y
    78.20.-e
    78.30.-j
    Opis:
    We report on the Raman scattering from single-layer molybdenum disulfide (MoS₂) deposited on various substrates: Si/SiO₂, hexagonal boron nitride (h-BN), sapphire, as well as suspended. Room temperature Raman scattering spectra are investigated under both resonant (632.8 nm) and non-resonant (514.5 nm) excitations. A rather weak influence of the substrate on the Raman scattering signal is observed. The most pronounced, although still small, is the effect of h-BN, which manifests itself in the change of energy positions of the E' and A'₁ Raman modes of single-layer MoS₂. We interpret this modification as originating from van der Waals interaction between the MoS₂ and h-BN layers.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 5; 1172-1175
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Emission from Mesoscopic-Size Islands Formed in a GaAs/AlAs Double Layer Structure
    Autorzy:
    Wysmołek, A.
    Chwalisz, B.
    Potemski, M.
    Stępniewski, R.
    Babiński, A.
    Raymond, S.
    Thierry-Mieg, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/2038338.pdf
    Data publikacji:
    2004-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.De
    78.20.Ls
    71.35.Lk
    73.20.-r
    78.47.+p
    Opis:
    The nature of sharp emission lines which are present in macro-luminescence experiments on a type-II GaAs/AlAs double quantum well structure is discussed. The experiments, which also include micro-lumines- cence measurements, allowed us to conclude that the sharp emission lines observed originate from lateral GaAlAs islands of a fewμm in diameter. They serve as efficient type-I recombination centers for indirect excitons and/or carriers which diffuse in the GaAs/AlAs QW structure and strongly affect the emission processes observed in macro-luminescence experiments. These traps can easily be filled with electron-hole pairs, giving rise to the formation of neutral excitons as well as more complex excitonic molecules. Magneto-luminescence spectra from single islands resemble those observed for natural quantum dots formed in narrow GaAs quantum wells.
    Źródło:
    Acta Physica Polonica A; 2004, 106, 3; 367-381
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical Properties of Molybdenum Disulfide $(MoS_2)$
    Autorzy:
    Gołasa, K.
    Grzeszczyk, M.
    Korona, K.
    Bożek, R.
    Binder, J.
    Szczytko, J.
    Wysmołek, A.
    Babiński, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399110.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    63.22.-m
    71.35.-y
    78.20.-e
    78.30.-j
    Opis:
    Research of a monolayer and a bulk $MoS_2$ is reported. The room temperature Raman spectra of the natural $MoS_2$ crystals for the both resonant (632.8 nm) and the non-resonant (532 nm) excitation are presented. The apparent differences observed in the spectra from the bulk and the one monolayer $MoS_2$ are discussed. In particular, the feature due to a first order scattering involving the LA(M) phonon in the resonance Raman spectrum of the one monolayer $MoS_2$ was observed and explained in terms of the disorder in the natural crystal. The disorder is also documented by the line-shape of the room-temperature photoluminescence spectra observed from both the bulk and the one monolayer $MoS_2$.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 849-851
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    FFirst TSC and DLTS Measurements of Low Temperature GaAs
    Autorzy:
    Muszalski, J.
    Babiński, A.
    Korona, K. P.
    Kamińska, E.
    Piotrowska, A.
    Kamińska, M.
    Weber, E. R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1891236.pdf
    Data publikacji:
    1991-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    72.80.Ey
    Opis:
    The first thermally stimulated current (TSC) and deep level transient spectroscopy (DLTS) studies performed on GaAs grown by molecular beam epitaxy (MBE) at low substrate temperatures (LT GaAs) are reported. TSC experiments, conducted on as grown and 400-580°C annealed layers showed domination of arsenic antisite (EL2-like) defect and supported its key role in hopping conductivity. DLTS studies, performed on Si doped and annealed at 800°C layers revealed substantially lower concentration of EL2-like defect and an electron trap of activation energy ΔE = 0.38 eV was found.
    Źródło:
    Acta Physica Polonica A; 1991, 80, 3; 413-416
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Neutral and Charged Excitons Localized in the InAs/GaAs Wetting Layer
    Autorzy:
    Babiński, A.
    Czyż, M.
    Golnik, A.
    Borysiuk, J.
    Kret, S.
    Raymond, S.
    Lapointe, J.
    Wasilewski, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811914.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.21.La
    78.55.Cr
    78.67.Hc
    Opis:
    It has recently been shown that potential fluctuations in a wetting layer, which accompanies InAs/GaAs quantum dots can localize excitons. Neutral excitons and biexcitons and charged excitons were identified. In this communication we report on studies of properties of the excitons over wide temperature range (T < 70 K). The micro-photoluminescence measurements enable investigation of excitons localized in a single potential fluctuation. Temperature-induced broadening of the neutral exciton as well as a quenching of the charged exciton at temperatures higher than 50 K are observed and discussed.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1055-1060
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Relative Reflection Difference as a Method for Measuring the Thickness of the Exfoliated MoSe₂ Layers
    Autorzy:
    Łempicka, K.
    Norowski, K.
    Grzeszczyk, M.
    Król, M.
    Lekenta, K.
    Babiński, A.
    Piętka, B.
    Szczytko, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1033778.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    63.20.dd
    78.20.Ci
    78.30.-j
    78.66.Li
    Opis:
    We propose a method for measuring the thickness of the exfoliated MoSe₂ layers deposited on Si/SiO₂ substrate, based on the reflectance measurements performed with laser light illumination at two different wavelengths: red and green from confocal microscope at room temperature. We demonstrate the correlation between the number of layers in a flake and the value of its relative reflection difference. We applied the transfer matrix method to calculate the reflectivity and verify our experimental results. The approach proposed by us allows for fast and automatic verification of the exfoliated MoSe₂ layers thickness on large areas of the substrate.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 316-318
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    GaSb Dots Grown on GaAs Surface by Metalorganic Chemical Vapour Deposition
    Autorzy:
    Bożek, R.
    Babiński, A.
    Baranowski, J. M.
    Stępniewski, R.
    Klusek, Z.
    Olejniczak, W.
    Starowieyski, K.
    Wróbel, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1934054.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Gh
    68.55.-a
    Opis:
    We report metaloorganic chemical vapour deposition growth of an anisotropic GaSb islands on GaAs (001) surface with a typical dimensions around 200 nm. Results of investigations employing scanning electron microscope, scanning tunnelling microscope and ph9tocapacitance are presented.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 974-976
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    MBE Growth and Characterization of a III-V Distributed Bragg Reflectors and InAs Quantum Dots
    Autorzy:
    Rousset, J.
    Słupinski, T.
    Jakubczyk, T.
    Kobak, J.
    Stawicki, P.
    Gołasa, K.
    Babinski, A.
    Nawrocki, M.
    Pacuski, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1403611.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.20.Ci
    78.67.Pt
    68.37.Hk
    Opis:
    We describe the realization and characterization of a distributed Bragg reflectors and InAs quantum dots grown by molecular beam epitaxy. The distributed Bragg reflectors are based on a stack of eight or twenty pairs of GaAs and AlAs layers with a stopband centered at about E_0=1.24 eV (λ_0=1000 nm). The whole structures exhibit a reflectivity coefficient above 90%. The growth rate was monitored in situ by measurement of the oscillations of the thermal emission intensity. The investigations conducted on the InAs quantum dots grown on GaAs show photoluminescence around E=1.25 eV (λ=990 nm). The combination of these two elements results in the realization of a microcavity containing InAs quantum dots and surrounded by 20 pairs of distributed Bragg reflectors.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 984-987
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Properties of Excitons in Quantum Dots with a Weak Confinement
    Autorzy:
    Gołasa, K.
    Molas, M.
    Goryca, M.
    Kazimierczuk, T.
    Smoleński, T.
    Koperski, M.
    Golnik, A.
    Kossacki, P.
    Potemski, M.
    Wasilewski, Z.
    Babiński, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399080.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.67.Hc
    Opis:
    Statistical properties of neutral excitons, biexcitons and trions confined to natural quantum dots formed in the InAs/GaAs wetting layer are reported. The correlation of the trion binding energy and the biexciton binding energy was found. Magnetospectroscopic measurements of the excitons revealed also the correlation of excitonic effective $g^\ast $ factor of an exciton with the biexciton binding energy. The qualitative picture of the effect of quantum confinement on the observed correlations is presented.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 781-784
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Reducing of Water Turbidity by Hydrotechnical Structures on the Example of the Wloclawek Reservoir
    Autorzy:
    Szatten, D. A.
    Babinski, Z.
    Habel, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/124854.pdf
    Data publikacji:
    2018
    Wydawca:
    Polskie Towarzystwo Inżynierii Ekologicznej
    Tematy:
    suspended sediment transport
    turbidity of water
    hydrotechnical structures
    Wloclawek Reservoir
    Opis:
    The dynamics of river sediment transport reflects morphogenetic processes taking place in the catchment, being at the same time an anthropogenic indicator. The aim of the research is to determine the impact of hydrotechnical structures on the continuity of suspended sediments transport. The research area is the Lower Vistula River with a single dam – Wloclawek, operating since the 1970s. The research included direct measurements of water turbidity in 2013–2016 in characteristic cross-sections of the Vistula River, using commonly used methods. The LISST-25X laser grain composition measurement sensor was also used to collect data, enabling determination of grain size of the suspended sediments. However, on the selected section of the river, modelling of momentary transport of suspended sediments using GIS tools was carried out. There was a significant dynamics of sediments transport in the longitudinal profile of the river, in relation to the diversity of hydrological and morphological conditions of the Vistula River. The impact of Wloclawek Reservoir on water turbidity reduction was determined. The balance of transport of suspended material was related to the processes of erosion and sediment accumulation below the dam. The functioning of the Wloclawek Reservoir in the current system (as a single dam) has a significant impact on sediment transport, which directly determines the course of fluvial processes across the entire Lower Vistula (from km 675 to the estuary) and indirectly in the coastal zone of the Baltic Sea.
    Źródło:
    Journal of Ecological Engineering; 2018, 19, 3; 197-205
    2299-8993
    Pojawia się w:
    Journal of Ecological Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
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