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Tytuł:
Optical Spectroscopy of Quantum Dots in High Magnetic Fields
Autorzy:
Babiński, A.
Powiązania:
https://bibliotekanauki.pl/articles/2046951.pdf
Data publikacji:
2006-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
78.55.Cr
75.75.+a
Opis:
Optical spectroscopy measurements of single InAs/GaAs self-assembled quantum dots have been performed. The multiexcitonic emission from the s-, p-, and d-shells of a single dot is observed and investigated in magnetic field up to 28 T. The Zeeman splitting of the s-shell excitons has been found to depend on the dot morphology. While the energy-splitting in flat (2 nm height) dots linearly increases with magnetic field, its significant non-linearity is observed for larger in size, tall (4 nm height) dots. The effect of magnetic field on the orbital motion of carriers in dots has also been investigated. It has been found that the modified Fock-Darwin pattern explains the observed evolution of the emission from highly-excited single tall quantum dot.
Źródło:
Acta Physica Polonica A; 2006, 110, 3; 275-286
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Orientation of Metastable EL2 under Uniaxial Stress
Autorzy:
Babiński, A.
Wysmołek, A.
Powiązania:
https://bibliotekanauki.pl/articles/1931913.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
72.20.Fr
72.80.Ey
Opis:
Results of electrical resistivity and Hall measurements of n-type GaAs under uniaxial stress along [111] direction performed at low temperature are presented. Alter the transformation of the EL2 defect into its metastable configuration, a stress-induced increase in electrical resistivity related to the capture of electrons by the acceptor state of the metastable EL2([EL2*]$\text{}_{-}\text{}_{/}\text{}_{0}$) was observed. It was found that the stress-induced increase in resistivity depended on the method of EL2-photoquenching. The observed effects are explained as the reorientation of EL2* centers in the crystal. The stress coefficients of the triple degenerate and the single degenerate sublevels of the [EL2*]$\text{}_{-}\text{}_{/}\text{}_{0}$ are found to be equal to -17 meV/GPa and -41 meV/GPa.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 137-140
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Properties of an Acceptor-like State of Metastable EL2 in n-type GaAs under Uniaxial Stress
Autorzy:
Babiński, A.
Wysmołek, A.
Powiązania:
https://bibliotekanauki.pl/articles/1924252.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
72.20.Fr
72.80.Ey
Opis:
The electrical resistivity and deep level transient spectroscopy measurements of n-type GaAs under uniaxial stress for [100] and [111] directions at low temperatures are presented. After the transformation of EL2 to its metastable state the stress induced strong anisotropy in the increase in resistivity was observed. The observed splitting of the acceptor-like state of metastable EL2 implies the trigonal symmetry of that defect.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 908-910
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Passivation of a Bulk Defect E$\text{}_{c}$-0.22 eV in GaAs by Contact with Phosphoric Acid
Autorzy:
Babiński, A.
Gołdys, E.
Powiązania:
https://bibliotekanauki.pl/articles/1886500.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.70.At
81.60.Cp
71.55.Eq
Opis:
The E$\text{}_{c}$-0.22 eV trap in Horizontal Bridgman undoped n-type GaAs may be passivated by contact with phosphoric acid for 8 hours at room temperature. Isochronal annealing, at around 250°C for 1 hour resulted in the partial recovery of this defect. The possible mechanisms of E$\text{}_{c}$-0.22 eV trap passivation are proposed.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 277-280
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deep Level Transient Spectroscopy Measurements of an Acceptor-like State of Metastable EL2 in GaAs and GaAsP
Autorzy:
Babiński, A.
Wysmołek, A.
Słupiński, T.
Powiązania:
https://bibliotekanauki.pl/articles/1929708.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
Opis:
The results of deep level transient spectroscopy measurements of an acceptor-like state of metastable EL2 in GaAs and GaAs$\text{}_{0.97}$P$\text{}_{0.03}$ are presented. The uniaxial stress in GaAs was applied in order to find the deep leve1 transient spectroscopy signal. It was found that the deep level transient spectroscopy signal depended on the stress direction. In GaAs$\text{}_{0.97}$P$\text{}_{0.03}$ the deep level transient spectroscopy peak related to an acceptor-like state of metastable EL2 was observed without external stress.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 673-676
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Pressure Dependence of Transition Metal-Related Levels in GaAs
Autorzy:
Babiński, A.
Baj, M.
Hennel, A.
Powiązania:
https://bibliotekanauki.pl/articles/1886748.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
62.50.+p
Opis:
The hydrostatic pressure coefficients of V$\text{}^{3+}$ $\text{}^{/}$ $\text{}^{2+}$ acceptor level in bulk GaAs and of the 0.48 eV trap (related to Ni$\text{}^{2+}$ $\text{}^{/}$ $\text{}^{1+}$ double acceptor level) in VPE GaAs were measured by means of the DLTS technique. The obtained values are 94 meV/GPa and 196 meV/GPa relative to the bottom of the conduction band. For Ni$\text{}^{2+}$ $\text{}^{/}$ $\text{}^{1+}$ level the strong pressure dependence of the capture cross-section activation energy (60 meV/GPa) was also observed.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 323-327
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Acceptor-Like Level of the EL2 Defect in its Metastable Configuration
Autorzy:
Dreszer, P.
Baj, M.
Babiński, A.
Powiązania:
https://bibliotekanauki.pl/articles/1879457.pdf
Data publikacji:
1991-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
78.50.Ge
Opis:
This paper presents for the first time the evident experimental confirmation that EL2 defect, while being in its metastable configuration, traps under hydrostatic pressure an additional electron, i.e. the acceptor-like (EL2*)$\text{}^{0}$ $\text{}^{/}$ $\text{}^{-}$ level enters the energy gap under pressure. We propose that in n-GaAs the EL2 thermal recovery takes always place via the (EL2*)$\text{}^{-}$ state.
Źródło:
Acta Physica Polonica A; 1991, 79, 1; 129-132
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Intershell Exchange Interaction in Charged GaAlAs Quantum Dots
Autorzy:
Molas, M.
Nicolet, A.
Potemski, M.
Babiński, A.
Powiązania:
https://bibliotekanauki.pl/articles/1399082.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
71.35.-y
78.55.Cr
71.70.Gm
Opis:
Optical anisotropy of charged excitons and biexcitons related to the single-particle s- and p-shell emission in GaAlAs/AlAs quantum dots is investigated. The polarization-dependence and time-resolved micro-photoluminescence measurements were performed. Cross-correlation measurements were used to identify the ladder of excitonic states and allowed us to show two cascade pathways, including the spin singlet and triplet states of charged excitons and biexcitons. The fine structure of the studied states is described and analysed in terms of electron-electron, hole-hole, and electron-hole exchange interactions.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 785-787
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hydrostatic Pressure Spectroscopy of the Vanadium Luminescence in GaAs
Autorzy:
Wysmołek, A.
Bożek, R.
Babiński, A.
Hennel, A. M.
Powiązania:
https://bibliotekanauki.pl/articles/1923845.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
78.55.Cr
Opis:
We report luminescence measurements of the intracenter transition $\text{}^{3}$T$\text{}_{2}$ → $\text{}^{3}$A$\text{}_{2}$ of the V$\text{}^{3+}$(3d$\text{}^{2}$) charge state in semi-insulating GaAs under hydrostatic pressure up to 0.8 GPa at liquid helium temperature. The hydrostatic pressure coefficient of the zero-phonon line is found to be equal to 6.9 ± 0.2 meV/GPa. This result enables us to determine the Huang-Rhys parameter, which characterizes the coupling to the symmetric mode of vibration, as S$\text{}_{A}$ = 1.4 ± 0.1. Using this parameter, computer simulation leading to a reconstruction of the shape of both luminescence and corresponding absorption spectra were performed.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 837-840
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dynamics of Photoexcited Carriers in GaInAs/GaAs Quantum Dots
Autorzy:
Ilczuk, E.
Korona, K. P.
Babiński, A.
Kuhl, J.
Powiązania:
https://bibliotekanauki.pl/articles/2028722.pdf
Data publikacji:
2001-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.40.+w
78.47.+p
78.67.-n
Opis:
We present photocurrent and time-resolved photoluminescence investigations of AlGaAs/GaInAs/GaAs structures containing GaInAs/GaAs self-assembled quantum dots. The high electrical field in those devices significantly influences carrier dynamics. The photocurrent spectra show a double peak with maxima at 1.40 and 1.47 eV (at 80 K). These maxima are due to the GaInAs wetting layer (higher) and the quantum dots (lower). The photoluminescence spectra comprise weak excitonic luminescence from GaAs at 1.504 eV (at 80 K) and stronger and broad emission from the Ga$\text{}_{0.4}$In$\text{}_{0.6}$As quantum dots. At 300 K, the quantum dots emission has a lifetime of 1.1 ns and has a maximum at an energy of 1.38 eV. By analysis of both experiments, we can separate the influence of different radiative and nonradiative recombination processes. So, the tunneling rate: r$\text{}_{T}$=0.5 ns$\text{}^{-1}$ and the radiative recombination rate in the quantum dots: r$\text{}_{RQD}$=0.4 ns$\text{}^{-1}$ have been determined. The high tunneling probability (due to the influence of the built-in electric field) reveals that the tunneling effect is important for the recombination and transport processes in our structures.
Źródło:
Acta Physica Polonica A; 2001, 100, 3; 379-386
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dynamics of Excitation Transfer Inside InAs/GaAs Quantum Dot System
Autorzy:
Korona, K. P.
Babiński, A.
Raymond, S.
Wasilewski, Z.
Powiązania:
https://bibliotekanauki.pl/articles/2046919.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.47.+p
72.20.Jv
78.67.Hc
78.55.Cr
Opis:
We present time-resolved photoluminescence investigations of InAs/GaAs structures containing quantum dots with the ground state at 1.43 eV. State filling effect and a Pauli blocking effect were clearly observed. These effects significantly influenced dynamics of excitation transfer from upper to lower state inside a dot leading to non-exponential dynamics. Numerical model based on nonlinear rate equations was proposed. The model described well the experimental data providing values of: lifetime of the ground state 0.53±0.03 ns, lifetime of excited state (when the ground state is full) 1.1±0.2 ns, and internal relaxation time (when the ground state is empty) 0.07±0.01 ns.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 219-224
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Intersubband Scattering on the Magnetic Field Dependence of the Conductivity Tensor
Autorzy:
Siwiec-Matuszyk, J.
Baj, M.
Babiński, A.
Kasprzak, J.
Powiązania:
https://bibliotekanauki.pl/articles/2046999.pdf
Data publikacji:
2006-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.My
73.50.Jt
73.21.Fg
73.61.Ey
Opis:
In this paper we show that intersubband scattering can lead to apparent inconsistency of the experimental results obtained by means of classical and quantum transport measurements and this discrepancy is entirely connected with the usage of classical formulae to describe magnetic field dependence of a conductivity tensor. We prove that there is no contradiction in our observations and that the models describing quantum oscillations and magnetic-field dependence of the conductivity tensor, which are present in the literature, complement each other.
Źródło:
Acta Physica Polonica A; 2006, 110, 3; 337-344
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Field Effect on the Excitation Spectrum of a Neutral Exciton in a Single Quantum Dot
Autorzy:
Molas, M.
Nicolet, A.
Piętka, B.
Babiński, A.
Potemski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1375688.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
71.35.-y
78.55.Cr
Opis:
Excitation-energy-dependent magnetospectroscopic measurements of a single GaAlAs/AlAs quantum dot were performed. A significant effect of the excitation energy on the photoluminescence spectra is reported. The photoluminescence excitation spectroscopy has been used to investigate the excitation spectrum of a single electron-hole pair - a neutral exciton in magnetic field up to 14 T. The observed resonances exhibit diamagnetic shift characteristic of an s-shell related emission. In our opinion, the creation of excited complexes involving an excited hole and a ground electron is responsible for the process.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1066-1068
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fine Structure of Neutral Excitons in Single GaAlAs Quantum Dots
Autorzy:
Molas, M.
Gołasa, K.
Piętka, B.
Potemski, M.
Babiński, A.
Powiązania:
https://bibliotekanauki.pl/articles/1403612.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.67.Hc
Opis:
Optical anisotropy of neutral excitons in GaAlAs/AlAs quantum dots is investigated. Low-temperature polarization-sensitive photoluminescence measurements of single quantum dots are performed. It is found that neutral excitons (X) in the quantum dots exhibit a fine structure splitting. The fine structure splitting ranges from 10 μeV to 100 μeV and correlates with the X energy. The polarization axis of the fine structure splitting is well oriented along [110] crystallographic direction of a substrate. The orientation is attributed to the elongation of GaAlAs/AlAs quantum dots in the [110] direction of the substrate.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 988-990
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Confocal Microscope Studies of $MoS_{2}$ Layer Thickness
Autorzy:
Grzeszczyk, M.
Gołasa, K.
Piętka, B.
Babiński, A.
Szczytko, J.
Powiązania:
https://bibliotekanauki.pl/articles/1377207.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Ci
63.20.dd
78.30.-j
78.66.Li
Opis:
We have been studying micro-luminescence of various exfoliated $MoS_{2}$ flakes using a confocal microscope. A crucial issue is to determine thickness of the investigated layer. The common way - using atomic force microscopy, electron microscopy or the Raman spectroscopy - requires moving the sample out from the confocal microscope experimental setup and looking for a particular exfoliated flake hidden among thousands of others. In order to preliminarily determine thickness of investigated layers we have performed a study on optical reflectivity and compared the results with the Raman spectroscopy investigations. In this way we were able to calibrate our experimental setup. Optical measurements are much faster than the Raman spectroscopy and can give a good estimation of $MoS_{2}$ thickness.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1207-1208
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 30

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