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Wyświetlanie 1-15 z 16
Tytuł:
Pressure Dependence of Exciton Binding Energy in GaN/Al$\text{}_{x}$Ga$\text{}_{1 - x}$N Quantum Wells
Autorzy:
Bardyszewski, W.
Łepkowski, S. P.
Teisseyre, H.
Powiązania:
https://bibliotekanauki.pl/articles/2048086.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.40.Fy
78.20.Bh
78.30.Fs
Opis:
We present a theoretical study of excitons in GaN/Al$\text{}_{x}$Ga$\text{}_{1 - x}$N wurtzite (0001) quantum wells subjected to hydrostatic pressure. Our results show that the combined effect of pressure induced changes in band structure and piezoelectric field leads to reduction of the exciton binding energy. This subtle effect is described quite accurately by our multiband model of excitons in quantum wells.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 663-665
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Symmetry of the Top Valence Band States in GaN/AlGaN Quantum Wells and its Influence on the Polarization of Emitted Light
Autorzy:
Bardyszewski, W.
Łepkowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/1492909.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.40.Fy
78.20.Bh
78.30.Fs
Opis:
We show theoretically that for narrow GaN/AlGaN quantum wells, lattice matched to GaN substrate/buffer and grown along the (0001) crystallographic direction the topmost valence subband symmetry depends critically on such parameters as quantum well thickness and barrier composition. This effect determines polarization of the emitted light. It is noted that the symmetry of the topmost valence band level is sensitive to the values of the $D_3$ and $D_4$ deformation potentials and can be employed in verification of existing literature values of these parameters.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 894-896
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Blue Laser on High N$\text{}_{2}$ Pressure-Grown Bulk GaN
Autorzy:
Grzegory, I.
Boćkowski, M.
Krukowski, S.
Łucznik, B.
Wróblewski, M.
Weyher, J.
Leszczyński, M.
Prystawko, P.
Czernecki, R.
Lehnert, J.
Nowak, G.
Perlin, P.
Teisseyre, H.
Purgał, W.
Krupczyński, W.
Suski, T.
Dmowski, L.
Litwin-Staszewska, E.
Skierbiszewski, C.
Łepkowski, S.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/2030423.pdf
Data publikacji:
2001-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Opis:
In this note we report briefly on the details of pulsed-current operated "blue" laser diode, constructed in our laboratories, which utilizes bulk GaN substrate. As described in Ref. [1] the substrate GaN crystal was grown by HNPSG method, and the laser structure was deposited on the conducting substrate by MOCVD techniques (for the details see Sec. 2 and Sec. 4 of Ref.~[1], respectively).
Źródło:
Acta Physica Polonica A; 2001, 100, Supplement; 229-232
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of the Built-In Strain on the In-Plane Optical Anisotropy of m-Plane GaN/AlGaN Quantum Wells
Autorzy:
Łepkowski, S.
Bardyszewski, W.
Teisseyre, H.
Powiązania:
https://bibliotekanauki.pl/articles/1492913.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.40.Fy
78.20.Bh
78.30.Fs
Opis:
We study theoretically the influence of the anisotropic biaxial strain originating from the lattice mismatch between the m-plane GaN/AlGaN quantum wells structure and the substrate on the optical anisotropy of such systems. It is demonstrated that the oscillator strengths for optical transitions with polarization of light parallel and perpendicular to the crystal axis c strongly depend on strain to such an extent that, by increasing the concentration of Al in the substrate from x = 0 to x = 0.5 one can change the polarization of the emitted light with respect to the c-axis by 90 degrees.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 897-898
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Poisson Ratio and Biaxial Relaxation Coefficient in $In_{x}Ga_{1-x}N$ and $In_{x}Al_{1-x}N$ Alloys
Autorzy:
Łepkowski, S.
Gorczyca, I.
Powiązania:
https://bibliotekanauki.pl/articles/1492915.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
62.20.de
61.43.Dq
81.40.Jj
Opis:
We present theoretical results showing dependence of Poisson ratio and biaxial relaxation coefficient on composition and atomic arrangement in wurtzite $In_{x}Ga_{1-x}N$ and $In_{x}Al_{1-x}N$ alloys. Our calculations reveal that the Poisson ratio determined for $In_{x}Ga_{1-x}N$ and $In_{x}Al_{1-x}N$ alloys subjected to a uniaxial stress parallel to the c axis of the wurtzite structure shows significant superlinear dependence on composition. The superlinear bowing in Poisson ratio is enlarged by the effect of In clustering. The biaxial relaxation coefficient determined for $In_{x}Ga_{1-x}N$ and $In_{x}Al_{1-x}N$ alloys subjected to a biaxial stress in the plane perpendicular to the c axis of the wurtzite structure changes superlinearly and linearly with x in $In_{x}Ga_{1-x}N$ and $In_{x}Al_{1-x}N$, respectively. The effect of In atom clustering results in sublinear dependence of the biaxial relaxation coefficient in both $In_{x}Ga_{1-x}N$ and $In_{x}Al_{1-x}N$ alloys.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 902-904
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Polarization-Induced Band Inversion in In-Rich InGaN/GaN Quantum Wells
Autorzy:
Łepkowski, S.
Bardyszewski, W.
Rodak, D.
Powiązania:
https://bibliotekanauki.pl/articles/1195356.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.Fg
73.22.Dj
Opis:
We theoretically study the polarization-induced band inversion phenomenon in c-plane In-rich InGaN/GaN quantum wells. Our calculations performed using the k·p method with the 8×8 Rashba-Sheka-Pikus Hamiltonian for the structures with the indium content between 90% and 100% show that the reordering of the conduction and valence bands occurs for the quantum well widths below the theoretical values of critical thickness for InGaN layers pseudomorphically grown on GaN substrates.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1154-1155
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Pressure Dependence of the Light Emission in Zinc-Blende InGaAs/GaAs and InGaN/GaN Quantum Wells
Autorzy:
Łepkowski, S.
Gorczyca, I.
Powiązania:
https://bibliotekanauki.pl/articles/1791301.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
62.20.D-
62.50.-p
81.40.Jj
78.67.De
Opis:
We present theoretical study of the pressure coefficient of the light emission $(dE_{E}/dP)$ in compressively strained zinc-blende InGaAs/GaAs and InGaN/GaN quantum wells, grown in a (001) direction. We investigate the contributions to $dE_{E}$/dP arising from (i) third-order (nonlinear) elasticity, (ii) nonlinear elasticity, originating from pressure dependence of elastic constants, and (iii) nonlinear dependence of elastic constants on composition in InGaAs and InGaN alloys. The obtained results indicate that the use of nonlinear elasticity is essential for determination of $dE_{E}$/dP in the strained InGaAs/GaAs and InGaN/GaN quantum wells, while the inclusion of the nonlinear dependence of elastic constants on composition of InGaAs and InGaN alloys does not improve agreement between the theoretical end experimental values of $dE_{E}$/dP in the considered structures.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 857-858
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Pressure-Driven Reordering of Valence Band States in AlGaN/AlN Quantum Wells
Autorzy:
Łepkowski, S.
Bardyszewski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1403639.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.67.De
62.50.-p
Opis:
We study theoretically the influence of external hydrostatic pressure on the valence band structure in [0001]-oriented $Al_{x}Ga_{1-x}N$/AlN quantum wells used in deep-ultraviolet light emitting devices. The calculations performed using the multi-band k·p method with excitonic effects show that for $Al_{x}Ga_{1-x}N$/AlN quantum wells with x = 0.7 and quantum well width of 1.5 nm, reordering of the topmost valence subbands having different symmetries occurs with increasing pressure. In these structures, at low pressure values the topmost valence level is of $\Gamma p_9$ symmetry whereas it changes to the $\Gamma p_7$ state for pressures about 2.5 GPa. We also find that the excitonic effects increase the critical value of pressure at which the change in the polarization of the emitted light occurs to 7 GPa. This behavior is opposite to the pressure-dependent reordering of the topmost valence band states in thin GaN/AlGaN quantum wells which occurs from $\Gamma p_7$ to $\Gamma p_9$ states.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1029-1030
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Theoretical Analysis of Optical Gain in Quantum Well Lasers Including Valence-Band Mixing Effect
Autorzy:
Łepkowski, S.
Bugajski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1968351.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Dx
42.55.Px
Opis:
The linear optical gain in the AlGaAs/GaAs quantum well lasers is studied theoretically, taking into account the valence-band mixing effect. Our approach is based on the multiband effective-mass theory (k p method) and the density-matrix formalism. In order to obtain the valence bands' structure we employ the 4×4 Luttinger-Kohn Hamiltonian, neglecting the coupling to the split-off band. The spectral dependence of the linear optical gain is calculated using the density-matrix method with interband relaxation. Finally, we analyse the spatial distribution of the optical gain in the quantum well region for the photon energy corresponding to the peak value of the linear gain.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 903-907
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Nonlinear Elasticity on Interband and Intersubband Transition Energies in GaN/AlN Superlattices
Autorzy:
Łepkowski, S. P.
Powiązania:
https://bibliotekanauki.pl/articles/2047688.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Pt
62.20.Dc
77.65.Ly
77.65.-j
Opis:
We present a theoretical study of the effect of nonlinear elasticity on interband and intersubband transition energies in wurtzite GaN/AlN superlattices. The effect of nonlinear elasticity is considered by taking into account the changes of elastic constants caused by the intrinsic hydrostatic pressure, originating from lattice misfit between constituents of the superlattice. We show that the influence of the effect of the nonlinear elasticity on the interband and intersubband transition energies in the GaN/AlN superlattices depends crucially on the strain state of structures, in particular on the in-plane lattice constant of the buffer or the substrate. For the superlattices strained to AlGaN buffers with small aluminum concentrations, the effect of nonlinear elasticity increases significantly the interband transition energy and decreases the intersubband transition energy. For the superlattices strained to AlGaN buffers with large aluminum concentrations, the effect of nonlinear elasticity leads to a decrease in the interband transition energy and an increase in the intersubband transition energy.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 315-319
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effects of Nonlinear Elasticity and Electromechanical Coupling on Optical Properties of InGaN/GaN and AlGaN/AlN Quantum Wells
Autorzy:
Łepkowski, S. P.
Majewski, J. A.
Powiązania:
https://bibliotekanauki.pl/articles/2046928.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.De
62.20.Dc
77.65.-j
Opis:
We present theoretical studies of effects of the nonlinear elasticity and the electromechanical coupling on the optical properties of InGaN/GaN and AlGaN/AlN quantum wells. In these structures, due to the lattice misfit between constituents, the quantum wells are compressively strained and the intrinsic hydrostatic pressure is present. Therefore, the nonlinear elasticity is investigated by taking into account the pressure dependence of elastic stiffness tensor for the strained quantum wells. We show that this effect leads to (i) decrease in the volumetric strain and (ii) increase in the polarization-induced built-in electric field in the quantum wells. Consequently, the interband transition energies in the quantum wells decrease when the nonlinear elasticity of nitrides is considered. On the other hand, we show that the effect of electromechanical coupling, i.e., co-existence of ordinary and converse piezoelectric effects results in increase in the interband transition energies in the considered quantum wells. It turns out that the influence of the nonlinear elasticity on the optical properties is stronger than the influence of electromechanical coupling for InGaN/GaN quantum wells, while for AlGaN/GaN the opposite situation is observed.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 237-242
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nonlinear Elasticity in Wurtzite GaN/AlN Planar Superlattices and Quantum Dots
Autorzy:
Łepkowski, S. P.
Majewski, J. A.
Jurczak, G.
Powiązania:
https://bibliotekanauki.pl/articles/2044495.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.-n
62.20.Dc
62.50.+p
Opis:
The elastic stiffness tensors for wurtzite GaN and AlN show a significant hydrostatic pressure dependence, which is the evidence of nonlinear elasticity of these compounds. We have examined how pressure dependence of elastic constants for wurtzite nitrides influences elastic and piezoelectric properties of GaN/AlN planar superlattices and quantum dots. Particularly, we show that built-in hydrostatic pressure, present in both quantum wells of the GaN/AlN superlattices and GaN/AlN quantum dots, increases significantly by 0.3-0.7 GPa when nonlinear elasticity is used. Consequently, the compressive volumetric strain in quantum wells and quantum dots decreases in comparison to the case of the linear elastic theory. However, the z-component of the built-in electric field in the quantum wells and quantum dots increases considerably when nonlinear elasticity is taken into account. Both effects, i.e., a decrease in the compressive volumetric strain as well as an increase in the built-in electric field, decrease the band-to-band transition energies in the quantum wells and quantum dots.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 749-754
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Pressure Dependence of Elastic Constants in Zinc-Blende III-N and Their Influence on the Light Emission in Nitride Heterostructures
Autorzy:
Łepkowski, S. P.
Majewski, J. A.
Powiązania:
https://bibliotekanauki.pl/articles/2038098.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
62.20.Dc
62.50.+p
Opis:
We studied the nonlinear elasticity effects for the case of III-N compounds. Particularly, we determined the pressure dependences of elastic constants, in zinc-blende InN, GaN, and AlN by performing ab initio calculations in the framework of plane-wave pseudopotential implementation of the density-functional theory. We found significant and almost linear increase in C$\text{}_{11}$, C$\text{}_{12}$ with pressure for considered nitrides compounds. Much weaker dependence on pressure was observed for C$\text{}_{44}$. We also discussed pressure dependences of two-dimensional Poisson's ratio and elastic anisotropy coefficient. Finally, we showed that the pressure dependence of elastic constants results in significant reduction of the pressure coefficient of the energy emission in cubic InGaN/GaN quantum wells and essentially improves the agreement between experimental and theoretical values.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 559-566
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and Elastic Properties of Wurtzite Al-Rich In$\text{}_{x}$Al$\text{}_{1 - x}$N Alloys
Autorzy:
Łepkowski, S. P.
Gorczyca, I.
Powiązania:
https://bibliotekanauki.pl/articles/2048088.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
62.20.de
Opis:
We present theoretical study of lattice parameters and elastic constants of wurtzite Al-rich In$\text{}_{x}$Al$\text{}_{1 - x}$N (x = 0.125, 0.1875 and 0.25) alloys using self-consistent ab initio calculations with a supercell model. Two different atomic arrangements have been considered for a given x, by either distributing the In atoms as uniformly as possible over the supercell or by clustering the In atoms together in a small part of the supercell. Our calculations reveal that the a and c lattice parameters show almost linear dependence on composition for the alloys with uniform distribution of In atoms, while for the case of alloys with clustered In atoms the c lattice parameter deviates from linearity quite significantly. For the alloys with clustered In atoms, we observe that the values of C$\text{}_{11}$, C$\text{}_{12}$, and C$\text{}_{44}$ elastic constants are significantly smaller than the linear interpolated values between the elastic constants of AlN and InN, and the values of C$\text{}_{33}$ elastic constant are significantly larger than the corresponding interpolated values. For the alloys with uniform distribution of In atoms, only C$\text{}_{11}$ elastic constant deviates significantly from linear dependence on composition.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 666-668
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 16

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