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Wyświetlanie 1-15 z 23
Tytuł:
Correlation-Driven Metal-Insulator Transitions
Autorzy:
Honig, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/2011236.pdf
Data publikacji:
2000-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.30.+h
71.45.Gm
Opis:
The effect of correlation-driven electronic transitions are described for the V$\text{}_{2}$O$\text{}_{3}$, NiS$\text{}_{2-x}$Se$\text{}_{x}$, and Fe$\text{}_{3}$O$\text{}_{4}$ systems. The various tranformations can all be rationalized in terms of elementary concepts pertaining to the Mott-Hubbard intraatomic electronic interactions or in terms of an order-disorder formalism involving Coulomb interactions among electrons on adjacent sites. Attention is directed to some outstanding issues that require further resolution.
Źródło:
Acta Physica Polonica A; 2000, 97, 1; 141-156
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Metal-Insulator Transition in Doped Semiconductors
Autorzy:
Jaroszyński, J.
Powiązania:
https://bibliotekanauki.pl/articles/1888088.pdf
Data publikacji:
1991-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.30.+h
Opis:
A survey is given of different kinds of metal-insulator transitions (MIT) in doped semiconductors. The role of electron-electron Coulomb interactions and of disorder is discussed vis-a-vis millikelvin experimental results for semimagnetic semiconductors (SMSC) in the vicinity of MIT. Critical behavior of conductivity tensor components and dielectric susceptibility at the magnetic field-induced MIT in p-type Hg$\text{}_{1-x}$Mn$\text{}_{x}$Te is compatible with the model in which the MIT is a result of quantum localization driven by disorder-modified electron-electron interactions. At the same time the critical behavior of the Hall coefficient suggests that, in addition to electrons forming the Fermi liquid (FL) and undergoing localization at the MIT, there is certain a concentration of local electron moments, even on the metallic side of the MIT. The formation of these moments can presumably be described in terms of a disordered Hubbard-Mott model.
Źródło:
Acta Physica Polonica A; 1991, 80, 2; 255-265
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Metal-Insulator Transition in Zinc-Doped LaSrCuO
Autorzy:
Malinowski, A.
Cieplak, M. Z.
Berkowski, M.
Plesiewicz, W.
Skośkiewicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/2046782.pdf
Data publikacji:
2006-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.72.-h
71.30.+h
74.25.Fy
Opis:
The magnetotransport in the vicinity of the metal-insulator transition in La$\text{}_{1.85}$Sr$\text{}_{0.15}$Cu$\text{}_{x}$Zn$\text{}_{1-x}$O$\text{}_{4}$ is studied in the mK temperature range. Both longitudinal and transverse magnetoresistance are negative indicating the importance of spin effects. The magnitude of transverse magnetoresistance is larger than the magnitude of longitudinal magnetoresistance, indicating the absence of positive orbital magnetoresistance, in sharp contrast to strongly underdoped La$\text{}_{2-x}$Sr$\text{}_{x}$CuO$\text{}_{4}$. Both transverse and longitudinal magnetoresistance are proportional to the relative change of zero-field conductivity. This suggests that low-temperature localization of carriers may originate in the spin-disorder scattering on the spin droplets around Zn-impurities.
Źródło:
Acta Physica Polonica A; 2006, 109, 4-5; 617-621
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Critical Exponents for Metal-Insulator Transition in Two-Dimensional Systems
Autorzy:
Wojtkiewicz, J.
Powiązania:
https://bibliotekanauki.pl/articles/1808033.pdf
Data publikacji:
2009-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.30.+h
71.10.Fd
02.40.Xx
Opis:
Three years ago, a new universality class, associated with the metal-insulator transition in quasi-two-dimensional compounds, was discovered. Imada has given explanation of the observed critical behaviour. Considerations in this work are based on the assumption that the one-particle dispersion is quartic one instead of the standard quadratic behaviour. In this paper, it is shown that other possible natural non-standard dispersions lead to other possible critical behaviour and critical exponents.
Źródło:
Acta Physica Polonica A; 2009, 115, 5; 931-934
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ferromagnetism and Metal-Insulator Transitions in Correlated Electron Systems with Alloy Disorder
Autorzy:
Byczuk, K.
Yu, U.
Hofstetter, W.
Vollhardt, D.
Powiązania:
https://bibliotekanauki.pl/articles/1810278.pdf
Data publikacji:
2009-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.23.-k
75.20.Hr
75.30.Mb
Opis:
Alloy disorder can affect ferromagnetism and metal-insulator transitions of correlated lattice fermion systems in subtle and often unexpected ways. Solving the Hubbard model and the periodic Anderson model within dynamical mean-field theory we show that alloy disorder can increase the Curie temperature of a non-disordered system, and also yields novel Mott or Kondo insulators at fractional electronic densities.
Źródło:
Acta Physica Polonica A; 2009, 115, 1; 7-12
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Phase Diagram of Metal-Insulator Transition in System with Anderson-Hubbard Centers
Autorzy:
Skorenkyy, Yu.
Didukh, L.
Kramar, O.
Dovhopyaty, Yu.
Powiązania:
https://bibliotekanauki.pl/articles/1418528.pdf
Data publikacji:
2012-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.10.Lp
71.30.+h
Opis:
The model of a strongly correlated system in which periodically spaced Anderson-Hubbard centers are introduced into narrow-band metal is considered. Besides the interactions between localized magnetic moments and strong on-site Coulomb interaction, the model takes into account the hybridization of localized and band states. To study the effect of the lattice deformation on the electrical properties of the system, the phonon term and elastic energy have been taken into account. Green functions for band and localized electrons have been found. On this base, the energy spectrum has been investigated as a function of model parameters, temperature and external pressure. The criterion of the metal-insulator transition for an integer value of electron concentration has been derived and the phase diagram of the metal-insulator transition has been built.
Źródło:
Acta Physica Polonica A; 2012, 122, 3; 532-534
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Reentrant Metal-Insulator Transition in $Ca_{1-x}Eu_{x}B_{6}$
Autorzy:
Glushkov, V.
Anisimov, M.
Baybakov, R.
Demishev, S.
Filippov, V.
Flachbart, K.
Kuznetsov, A.
Shitsevalova, N.
Sluchanko, N.
Powiązania:
https://bibliotekanauki.pl/articles/1369362.pdf
Data publikacji:
2014-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.30.+h
72.15.Gd
75.47.Gk
Opis:
Resistivity, Hall and Seebeck effects have been studied on single crystals of $Ca_{1-x}Eu_{x}B_{6}$ (0 ≤ x ≤ 1) at temperatures 2-300 K and in magnetic fields up to 8 T. An insulating ground state is found to be limited by narrow range of Eu doping 0.6 ≤ x ≤ 0.8. This region is characterized by an enhanced colossal magnetoresistance (CMR), which reaches values of ρ(0)/ρ(7T) > $10^{6}$ for x = 0.63 at T < 10 K. Decreasing of Eu content in $Ca_{1-x}Eu_{x}B_{6}$ below x* ≈ 0.6 restores the metallic ground state with moderate resistivity (ρ ~ 1 ÷ 5 mΩ·cm) and CMR amplitude (ρ(0)/ρ(7T) < 7). The second metal-insulator transition (MIT) in $Ca_{1-x}Eu_{x}B_{6}$ is observed beyond the whole conductivity region found earlier in the narrow range of Eu doping (0.7 ≤ x ≤ 0.8). The correlation between the enhanced CMR amplitude, the onset of positive diffusive thermopower and the elevation of anomalous Hall effect, determined for Eu content 0.6 ≤ x ≤ 0.85, favors the idea that a smooth change of band structure is the main factor governing the reentrant MIT in $Ca_{1-x}Eu_{x}B_{6}$.
Źródło:
Acta Physica Polonica A; 2014, 126, 1; 294-295
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Quantum Model for Metal-Insulator Transition in Amorphous Gd_{x}Si_{1-x}
Autorzy:
Paja, A.
Ornat, M.
Powiązania:
https://bibliotekanauki.pl/articles/1399304.pdf
Data publikacji:
2013-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.15.Cz
72.15.Lh
72.15.Rn
Opis:
The model for experimentally observed metal-insulator transition induced by magnetic field in amorphous $Gd_{x}Si_{1 - x}$ is presented. The method of calculation is based on the previously created model for amorphous alloys now developed to include magnetic field effects. The model is based on the quantum "2 $k_{F}$" scattering model theory where the pseudopotentials are replaced by the scattering matrix operators and the Fermi energy is properly determined by the accurate values of the phase shifts. The results agree very well with experimental data.
Źródło:
Acta Physica Polonica A; 2013, 124, 4; 717-719
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Matrix onto Oxidation of Metallic Nanoparticles in Metal-Insulator Nanocomposite Films
Autorzy:
Fedotova, J.
Powiązania:
https://bibliotekanauki.pl/articles/1381794.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
73.40.Rw
73.63.Bd
62.23.Pq
68.37.Lp
68.37.Og
Opis:
Paper reports the results of X-ray diffraction, X-ray absorption spectroscopy and the Mössbauer spectroscopy of metal-insulator films sintered in Ar+O atmosphere evidencing the difference in oxidation of FeCoZr nanoparticles embedded into $Al_2O_3$ and $Pb(ZrTi)O_3$ matrixes. It is proved that $Al_2O_3$ matrix with high resistance to oxidation favors the formation of nanoparticles with "metal core-oxide shell" structure, while fully oxidized nanoparticles are observed inside $Pb(ZrTi)O_3$ matrix.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1418-1420
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Tailored Magnetic and Electric States in 3d-Metal-Insulator Films: Characterization and Applications
Autorzy:
Fedotova, J.
Powiązania:
https://bibliotekanauki.pl/articles/1197852.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Gk
73.40.Rw
73.63.Bd
62.23.Pq
68.37.Lp
68.37.Og
Opis:
Progress in designing of new low-cost magnetoelectronic planar devices requires new artificial films combining tuneable magnetic and electric properties. In this context, metal-insulator films are prospective for synthesis of materials with tailored physical properties that could be controlled with films composition and synthesis regimes. Present overview covers the summary of recent experimental results on complimentary and systematic study of macroscopic and local magnetic properties of films using vibrating sample magnetometer and Mössbauer spectroscopy with respect to phase composition and structural analysis at nanoscale by X-ray absorption spectroscopy in the extended X-ray absorption fine structure range, transmission electron microscopy and high-resolution transmission electron microscopy. Specific relationship between films structure and resulting magnetic properties (SP relaxation, core-shell exchange interaction, perpendicular magnetic anisotropy) is considered. Effects of magnetic and electric percolation in films are discussed in correlation with synthesis regimes (atmosphere of deposition, temperature of the substrate) and films composition. Physical mechanisms and models describing magnetic and electric properties of composite films are analyzed. Finally, technological approaches are proposed for tuning films properties towards their desired combination with respect to application in designing of sensors and planar (non-coil) inductive elements.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 944-952
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Two-dimensional modeling of surface photovoltage in metal/insulator/n-GaN structure with cylindrical symmetry
Autorzy:
Matys, M
Powroznik, P
Kupka, D
Adamowicz, B
Powiązania:
https://bibliotekanauki.pl/articles/174326.pdf
Data publikacji:
2013
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
surface photovoltage
gallium nitride
metal-insulator-semiconductor (MIS) structure
interface states
photodetector
Opis:
The rigorous numerical analysis of the surface photovoltage (SPV) versus excitation UV-light intensity (Φ), from 104 to 1020 photon/(cm2s) in a metal/insulator/n-GaN structure with a negative gate voltage (VG = –2 V) was performed using a finite element method. In the simulations we assumed a continuous U-shape density distribution function Dit(E) of the interface states and n-type doping concentration ND = 1016 cm–3. The SPV signal was calculated and compared in three different characteristic regions at the interface, namely i) under the gate centre, ii) near the gate edge and iii) between the gate and ohmic contact. We attributed the differences in SPV(Φ) dependences to the influence of the interface states in terms of the initial band bending and interface recombination controlled by the gate bias. The obtained results are useful for the design of GaN-based UV-radiation photodetectors.
Źródło:
Optica Applicata; 2013, 43, 1; 47-52
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A review of the current state-of-the-art in Fano resonance-based plasmonic metal-insulator-metal waveguides for sensing applications
Autorzy:
Adhikari, R.
Chauhan, D.
Mola, G. T.
Dwivedi, R. P.
Powiązania:
https://bibliotekanauki.pl/articles/2063886.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
coupled resonator
Fano resonance
finite element method
plasmonic nanosensor
sensitivity
waveguide
Opis:
Fano resonance is an optical effect that emerges from the coherent coupling and interference (constructive and destructive) between the continuous state (background process) and the Lorentzian state (resonant process) in the plasmonic waveguide-resonator system. This effect has been used in the applications like optical sensors. These sensors are extensively used in sensing biochemicals and gases by the measurement of refractive index changes as they offer high sensitivity and ultra-high figure of merit. Herein, we surveyed several plasmonic Fano sensors with different geometries composed of metal-insulator-metal waveguide(s). First, the resonators are categorized based on different architectures. The materials and methods adopted for these designs are precisely surveyed and presented. The performances are compared depending upon the characterization parameters like sensitivity and figure of merit. Finally, based on the survey of very recent models, the advances and challenges of refractive index sensing deployed on Fano resonances are discussed.
Źródło:
Opto-Electronics Review; 2021, 29, 4; 148--166
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thermodynamic Analysis of Metal-Insulator Transitions. Effect of Changes in the Density of States Function
Autorzy:
Hoehn, R.
Honig, J.
Powiązania:
https://bibliotekanauki.pl/articles/1808133.pdf
Data publikacji:
2009-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.10.Hf
71.20.-b
71.10.Ay
71.30.+h
71.45.Gm
Opis:
Prior theories of metal-insulator transitions by Spałek et al. were extended to include quartic terms in the temperature and by introducing two different density of state functions. The effects of these extensions on low-temperature metal-insulator transitions and on reentrant metallic behavior in solids have been investigated.
Źródło:
Acta Physica Polonica A; 2009, 115, 3; 745-754
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A DNA Biosensor Based Interface States of a Metal-Insulator-Semiconductor Diode for Biotechnology Applications
Autorzy:
Al-Ghamdi, A.
Al-Hartomy, O.
Gupta, R.
El-Tantawy, F.
Taskan, E.
Hasar, H.
Yakuphanoglu, F.
Powiązania:
https://bibliotekanauki.pl/articles/1489876.pdf
Data publikacji:
2012-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Jn
81.05.Fb
73.30.+y
Opis:
We studied how a DNA sensor based on the interface states of a conventional metal-insulator-semiconductor diode can be prepared for biotechnology applications. For this purpose, the p-type silicon/metal diodes were prepared using $SiO_2$ and DNA layers. The obtained results were analyzed and compared with interfaces of DNA and $SiO_2$. It is seen that the ideality factor (1.82) of the $Al//p-Si//SiO_2//DNA//Ag$ diode is lower than that (3.31) of the $Al//p-Si//SiO_2//Ag$ diode. This indicates that the electronic performance of DNA/Si junction was better than that of $SiO_2//Si$ junction. The interface states of the $Al//p-Si//SiO_2//DNA//Ag$ and $Al//p-Si//SiO_2//Ag$ junctions were analyzed by conductance technique. The obtained D_{it} values indicate that the DNA layer is an effective parameter to control the interface states of the conventional Si based on metal/semiconductor contacts. Results exhibited that DNA based metal-insulator-semiconductor diode could be used as DNA sensor for biotechnology applications.
Źródło:
Acta Physica Polonica A; 2012, 121, 3; 673-677
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of gate leakage current components in metal-insulator-semiconductor structures with high-k gate dielectris
Autorzy:
Janik, T.
Jakubowski, A.
Majkusiak, B.
Korwin-Pawłowski, M.
Powiązania:
https://bibliotekanauki.pl/articles/308423.pdf
Data publikacji:
2001
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
MIS structures
ultrathin dielectrics
high-k dielectrics
Opis:
Numerical simulations of the gate leakage current in metal-insulator-semiconductor (MIS) structures based on the transfer matrix approach were carried out. They show contribution of different components of this current in MIS structures with best known high-k dielectrics such as Ta2O5 and TiO2. The comparison of the gate leakage current in MIS structures with SiO2 layer as well Ta2O5 and TiO2 layers is presented as well. Additionally, the minimum Si electron affinity to a gate dielectric which allows to preserve given level of the gate leakage current is proposed.
Źródło:
Journal of Telecommunications and Information Technology; 2001, 1; 65-69
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 23

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