Correlation-Driven Metal-Insulator Transitions

The effect of correlation-driven electronic transitions are described for the V$\text{}_{2}$O$\text{}_{3}$, NiS$\text{}_{2-x}$Se$\text{}_{x}$, and Fe$\text{}_{3}$O$\text{}_{4}$ systems. The various tranformations can all be rationalized in terms of elementary concepts pertaining to the Mott-Hubbard intraatomic electronic interactions or in terms of an order-disorder formalism involving Coulomb interactions among electrons on adjacent sites. Attention is directed to some outstanding issues that require further resolution.