- Tytuł:
- X-ray Diffraction Topography - Investigation of Single Crystals Grown by the Czochralski Method
- Autorzy:
-
Lefeld-Sosnowska, M.
Malinowska, A. - Powiązania:
- https://bibliotekanauki.pl/articles/1399485.pdf
- Data publikacji:
- 2013-08
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
- 61.72.Ff
- Opis:
- X-ray diffraction topography is one of basic diagnostics tools serving for visualisation of single crystal lattice defects. Defects of various kinds can be observed. The present study is a review of topographic results obtained in the X-ray laboratory of the Institute of Experimental Physics, University of Warsaw, for three families of single crystals grown by the Czochralski method: (i) silicon (Si) and $Si_{1-x}Ge_{x}$, (ii) selected binary REVO_4 oxides and (iii) selected ternary $ABCO_4$ oxides. The effect of chemical composition, growth conditions and post growth thermal annealing on the defect appearing in crystals is discussed. Various defects are revealed: the growth dislocations (some early Si crystals), the composition-gradient-induced lattice deformation $(Si_{1-x}Ge_{x}$, solid solutions $Ca_{x}Sr_{1-x}NdAlO_4)$, defects generated in Si after the post growth thermal processes, oriented elongated rod-like macro-defects tending to form networks within the crystal core, cellular structure in the outer shell $(SrLaGaO_4)$, and variously developed block structure (in selected binary $\text{REVO}_4$ crystals).
- Źródło:
-
Acta Physica Polonica A; 2013, 124, 2; 360-371
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł