Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "Bugajski, M" wg kryterium: Wszystkie pola

  Lista filtrów
Wyrównaj
Wyświetlanie 1-15 z 33
Tytuł:
Visible Light Emission from Porous Silicon
Autorzy:
Bugajski, M.
Wesołowski, M.
Lewandowski, W.
Ornoch, J.
Kątcki, J.
Powiązania:
https://bibliotekanauki.pl/articles/1924257.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.65.-s
Opis:
The aim of this paper is the study of porous Si prepared by preferential anodic dissolution in concentrated HF acid solutions. Porous silicon layers exhibited extremely efficient luminescence in the 700-900 nm range at room temperature. Basic characteristics of this luminescence strongly suggest the intrinsic origin of the process, directly related to quantum confinement. The additional transmission-electron-microscopy and electron-diffraction studies - were performed to support hypothesis that luminescence originates from silicon nanostructures.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 914-918
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Identification of Residual Impurities in Si-Doped MBE Grown GaAs
Autorzy:
Kaniewska, M.
Regiński, K.
Kaniewski, J.
Muszalski, J.
Ornoch, L.
Adamczewska, J.
Marczewski, J.
Bugajski, M.
Mizera, E.
Powiązania:
https://bibliotekanauki.pl/articles/1933820.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
73.40.Νs
73.20.Hb
Opis:
The changes of dopant vaporization enthalpy in GaAs:Si grown by molecular beam epitaxy revealed the presence of residual donors related to group VI elements. This has been confirmed by deep level transient spectroscopy studies of AlGaAs:Si layers grown in the same MBE system. It is argued that a commonly observed deep trap labelled E2 is probably related to Te, Se or S. The measurements have been performed on near-ideal Al Schottky barriers grown in situ by MBE.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 775-778
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Growth Conditions on Exciton Properties in Thin Quantum Wells of GaAs/AlGaAs
Autorzy:
Godlewski, M.
Bergman, J. P.
Holtz, P. O.
Monemar, B.
Bugajski, M.
Regiński, K.
Kaniewska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1933743.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
73.20.Fz
71.35.+z
Opis:
Exciton properties in growth interrupted quantum wells of GaAs/AlGaAs are compared with those observed for structures grown without growth interruption during the molecular beam epitaxy process. We report observation of quasi-localized excitons in quantum well structures grown without growth interruptions. Quasi-localized excitons drift towards the states of a lower potential energy in the quantum well. For growth interrupted MBE structures islands with a constant quantum well thickness become large compared to the exciton radius. Free or lightly localized excitons are observed in that case.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 719-722
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of the central histaminergic systems on the pituitary-adrenocortical response to met-enkephalinamide
Autorzy:
Bugajski, J
Turon, M.
Gadek-Michalska, A.
Olowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/70580.pdf
Data publikacji:
1995
Wydawca:
Polskie Towarzystwo Fizjologiczne
Tematy:
hypothalamic histamine
central histaminergic system
brain
endorphin
dopamine
noradrenaline
endogenous enkephalin
histamine receptor
met-enkephalinamide
pituitary-adrenocortical response
opioid receptor
corticosterone
alpha-Fluoromethylhistidine
Źródło:
Journal of Physiology and Pharmacology; 1995, 46, 3
0867-5910
Pojawia się w:
Journal of Physiology and Pharmacology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fermi-Edge Singularity in Excitonic Spectra of Modulation Doped AlGaAs/GaAs Quantum Wells
Autorzy:
Bugajski, M.
Regiński, K.
Godlewski, M.
Wesołowski, M.
Holtz, P. O.
Buyanov, A. V.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1950741.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.+z
85.30.De
Opis:
The dynamic response of an electron Fermi sea to the presence of optically generated holes gives rise to an enhanced interaction of correlated electron-hole pairs near the Fermi level, resulting in an enhanced oscillator strength for optical transitions, referred to as the Fermi-edge singularity. We studied this effect in modulation-doped quantum wells which provide confined dense Fermi sea, spatially separated from dopant atoms, easily accessible for investigations under low excitation conditions. The Fermi-edge singularity was observed in both photoluminescence and photoluminescence excitation experiments, although in the case of photoluminescence the samples had to be either co-doped with acceptors in the wells to provide necessary localization of holes or designed to allow for nearly resonant scattering between the electronic states near the Fermi energy and the next unoccupied subband of the 2D electron gas.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 751-754
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Inter-Island Energy Transfer in AlGaAs/GaAs Quantum Wells Grown by Molecular Beam Epitaxy
Autorzy:
Godlewski, M.
Holz, P. O.
Bergman, J. P.
Monemar, B.
Regiński, K.
Bugajski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1952469.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
78.47.+p
73.20.Jc
Opis:
The results of photoluminescence, time-resolved photoluminescence, photoluminescence excitation and photoluminescence kinetics studies are presented for a Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As/GaAs quantum well system grown without growth interruptions at the interfaces. The time-resolved photoluminescence measurements show drift of excitons towards lower energy states induced in a quantum well by potential fluctuations. We present also a first direct evidence for migration of free excitons from the 24 to 25 ML regions of the quantum well and interpret these results within a linear rate model, deriving the transition rate of 290 ps$\text{}^{-1}$. Such inter-island migration processes have been observed till now only in growth interrupted structures.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1007-1011
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Low Threshold Room Temperature AlGaAs/GaAs GRIN SCH SQW Lasers Grown by MBE
Autorzy:
Kaniewska, M.
Regiński, K.
Muszalski, J.
Kryńska, D.
Litkowiec, A.
Kaniewski, J.
Wesołowski, M.
Bugajski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1951031.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.De
85.60.Jb
73.20.Dx
Opis:
Low threshold room temperature AlGaAs/GaAs graded-index separate-confinement heterostructure single quantum well (GRIN SCH SQW) lasers were prepared by MBE. The influence of the growth temperature on the laser parameters was studied. Due to the high temperature MBE growth and the use of p-contact layer in the form of thin quasi-metallic beryllium layer significant reduction of the threshold current was achieved.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 847-850
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Theoretical Analysis of Optical Gain in Quantum Well Lasers Including Valence-Band Mixing Effect
Autorzy:
Łepkowski, S.
Bugajski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1968351.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Dx
42.55.Px
Opis:
The linear optical gain in the AlGaAs/GaAs quantum well lasers is studied theoretically, taking into account the valence-band mixing effect. Our approach is based on the multiband effective-mass theory (k p method) and the density-matrix formalism. In order to obtain the valence bands' structure we employ the 4×4 Luttinger-Kohn Hamiltonian, neglecting the coupling to the split-off band. The spectral dependence of the linear optical gain is calculated using the density-matrix method with interband relaxation. Finally, we analyse the spatial distribution of the optical gain in the quantum well region for the photon energy corresponding to the peak value of the linear gain.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 903-907
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fermi-Edge Singularity in Luminescence Spectra of P-Type Modulation Doped AlGaAs/GaAs Quantum Wells
Autorzy:
Bugajski, M.
Godlewski, M.
Regiński, K.
Holtz, P. O.
Bergman, J. P.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1969046.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Px
73.20.Dx
Opis:
We have studied an enhancement of the oscillator strength for optical transitions near the Fermi energy in p-type modulation-doped quantum wells, which, so far, deserved much less attention than analogous n-type systems, because of the complicated valence band structure involved. The relatively wide (L=150 Å) quantum wells and high doping levels were used, containing more than one occupied subband. The enhancement in the photoluminescence intensity at the Fermi energy resulted from the strong correlation and multiple scattering of holes near the Fermi edge by the localized electrons.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 265-270
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Resistivity AlGaAs Grown by Low Temperature MBE
Autorzy:
Radomska, D.
Ratajczak, J.
Regiński, K.
Bugajski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1992076.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ey
Opis:
Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As layers were grown by molecular beam epitaxy using substrate temperature 200-300°C, tetrameric As and two values of As/Ga+Al flux ratio i.e. 3 or 8. The post-growth annealing was performed in situ at 600°C for 20 min under As-overpressure. The samples were characterised by reflection high-energy electron diffraction, transmission electron microscope and room-temperature I-V measurements of n$\text{}^{+}$/LT grown layer /n$\text{}^{+}$ resistors. The resistivity and trap-filled limited voltage have been determined. The best layers exhibited ρ of the order of 10$\text{}^{9}$ Ω cm, were monocrystalline, uniformly precipitated and without dislocations.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 492-496
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoreflectance Studies of InGaAs/GaAs/AlGaAs Single Quantum Well Laser Structures
Autorzy:
Ochalski, T. J.
Żuk, J.
Regiński, K.
Bugajski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1992051.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
78.20.-e
Opis:
We report on photoreflectance investigations of strained-layer In$\text{}_{0.2}$Ga$\text{}_{0.8}$As/GaAs/Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As single quantum well laser structures grown by molecular beam epitaxy. All the observed photoreflectance spectral features were assigned to the e-hh transitions with Δn=0. The transition energies were determined and compared to their values calculated within the envelope function approximation. Assuming that one third of the total strain in the central In$\text{}_{0.2}$Ga$\text{}_{0.8}$As layer is relaxed by biaxial deformation of surrounding thin GaAs layers, it is possible to explain reasonably the results of our photoreflectance experiment.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 463-467
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Time-Resolved Microwave Spectroscopy of High Electron Mobility GaAs/AlGaAs Structures
Autorzy:
Khachepuridze, A.
Ivanov, V. Yu.
Godlewski, M.
Regiński, K.
Bugajski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1991552.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Dx
76.40.+b
76.70.Hb
Opis:
Mechanism of the optical detection of cyclotron resonance via emission from 2D electron gas in modulation doped quantum wells and in high electron mobility structures of GaAs/AlGaAs is discussed based on the results of time-resolved optical detection of cyclotron resonance. An important role of impact ionization processes is demonstrated. We also show that microwave radiation destroys emission enhancement at the Fermi level and the relevant mechanism is proposed.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 387-391
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Resonant Cavity Enhanced Photonic Devices
Autorzy:
Bugajski, M.
Muszalski, J.
Ochalski, T.
Kątcki, J.
Mroziewicz, B.
Powiązania:
https://bibliotekanauki.pl/articles/2030303.pdf
Data publikacji:
2002-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Fs
78.66.Fd
78.55.-m
78.67.De
78.45.+h
78.47.+p
Opis:
In the present paper we review our recent works on technology, basic physics, and applications of one-dimensional photonic structures. We demonstrate spontaneous emission control in In$\text{}_{x}$Ga$\text{}_{1-x}$As/GaAs planar microcavities with distributed Bragg reflectors. In general, observed trends are in agreement with theoretical predictions. We also demonstrate the operation of resonant-cavity light emitting diodes and optically pumped vertical cavity light emitting diodes developed recently at the Department of Physics and Technology of Low-Dimensional Structures of the Institute of Electron Technology.
Źródło:
Acta Physica Polonica A; 2002, 101, 1; 105-118
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The influence of MBE growth conditions on optical properties of InGlGaAs/AlGaAs structures
Autorzy:
Kosiel, K.
Regiński, K.
Szerling, A.
Piwoński, T.
Bugajski, M.
Powiązania:
https://bibliotekanauki.pl/articles/378399.pdf
Data publikacji:
2004
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
Opis:
Optical properties of compressively strained In₀.₂₄Al₀.₁₉Ga₀.₅₇As layers were investigated as a function of the MBE growth conditions. The optimum temperature of the crystal surface (Ts) for MBE growth of this quaternary layer as well as the optimal cooling down process necessary for achieving appropriate Ts for InAlGaAs were experimentally found.
Źródło:
Electron Technology : Internet Journal; 2004, 36, 4; 1-3
1897-2381
Pojawia się w:
Electron Technology : Internet Journal
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 33

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies