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Tytuł:
Transmission Through Graphene Junctions with Rashba Spin-Orbit Coupling
Autorzy:
Rataj, M.
Barnaś, J.
Powiązania:
https://bibliotekanauki.pl/articles/1386718.pdf
Data publikacji:
2015-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
72.80.Vp
73.23.Ad
73.40.Lq
75.70.Tj
Opis:
Electronic transport in a graphene junction is considered theoretically. Graphene is assumed to be deposited on a substrate which generates Rashba spin-orbit coupling. However, the Rashba parameters in the two parts of the junction are assumed to be generally different. Additionally, different gate voltages are applied to the two parts, which allow tuning the Fermi level and potential step. We analyze the probabilities of electron transmission through the junction and electrical conductance in the linear response regime.
Źródło:
Acta Physica Polonica A; 2015, 127, 2; 481-483
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transmission Coefficient for a Double-Barrier Quantum Well Structure
Autorzy:
Kaczmarek, E.
Szkiełko, W.
Powiązania:
https://bibliotekanauki.pl/articles/1891331.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
73.40.Gk
Opis:
In this paper the transmission coefficient for a double-barrier quantum well (DBQW) structure as a function of applied voltage is calculated, for the first time, using WKB approximation: This approach allows to discuss a dependence of several quantities characteristic of the system (e.g. the value of the coefficient, resonance voltage, charge stored in the well) on the barrier and the well parameters.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 441-444
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transition Metal-Related Centres in Silicon Studied by High-Resolution Deep Level Transient Spectroscopy
Autorzy:
Dobaczewski, L.
Kamiński, P.
Kozłowski, R.
Surma, M.
Powiązania:
https://bibliotekanauki.pl/articles/1933733.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
71.55.Cn
68.55.Ln
Opis:
High-resolution Laplace-transform deep level transient spectroscopy technique has been used to study a fine structure in the carrier emission process for transition metal- and thermal donors-related defects in silicon. For the case of the transition metal centres the method revealed the fine structure when the defect has a similar emission characteristics to other defects in the crystal. The method also demonstrated the complex emission process for the thermal donors.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 703-706
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thin Film ZnO as Sublayer for Electric Contact for Bulk GaN with Low Electron Concentration
Autorzy:
Grzanka, S.
Łuka, G.
Krajewski, T. A.
Guziewicz, E.
Jachymek, R.
Purgal, W.
Wiśniewska, R.
Sarzyńska, A.
Bering-Staniszewska, A.
Godlewski, M.
Perlin, P.
Powiązania:
https://bibliotekanauki.pl/articles/2048094.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
73.40.Kp
73.40.Lq
Opis:
Fabrication of low resistivity ohmic contacts to N polarity gallium nitride crystal is an important issue for the construction of the vertical current flow devices like laser diodes and high brightness light emitting diodes. Gallium nitride is a challenging material because of the high metal work function required to form a barrier-free metal-semiconductor interface. In practice, all useful ohmic contacts to GaN are based on the tunneling effect. Efficient tunneling requires high doping of the material. The most challenging task is to fabricate high quality metal ohmic contacts on the substrate because the doping control is here much more difficult that in the case of epitaxial layers. In the present work we propose a method for fabricating low resistivity ohmic contacts on N-side of GaN wafers grown by hydride vapor phase epitaxy. These crystals were characterized by a n-type conductivity and the electron concentration of the order of 10$\text{}^{17}$ cm$\text{}^{-3}$. The standard Ti/Au contact turned out to be unsatisfactory with respect to its linearity and resistance. Instead we decided to deposit high-n type ZnO layers (thickness 50 nm and 100 nm) prepared by atomic layer deposition at temperature of 200°C. The layers were highly n-type conductive with the electron concentration in the order of 10$\text{}^{20}$ cm$\text{}^{-3}$. Afterwards, the metal contact to ZnO was formed by depositing Ti and Au. The electrical characterization of such a contact showed very good linearity and as low resistance as 1.6 × 10$\text{}^{-3}$ Ω cm$\text{}^{2}$. The results indicate advantageous properties of contacts formed by the combination of the atomic layer deposition and hydride vapor phase epitaxy technology.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 672-674
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Influence of Metastabilities on the Luminescence in the Cu(In,Ga)Se$\text{}_{2}$ Solar Cells
Autorzy:
Prządo, D.
Igalson, M.
Bacewicz, R.
Edoff, M.
Powiązania:
https://bibliotekanauki.pl/articles/2047374.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
78.60.Fi
73.40.Lq
73.61.Le
72.40.+w
Opis:
Photoluminescence and electroluminescence spectra of the absorber layer in ZnO/CdS/Cu(In,Ga)Se$\text{}_{2}$ solar cells were measured. Their dependence on temperature, excitation intensity and applied voltage were studied. Electroluminescence measurements were used to investigate light- and bias-induced metastabilities in the absorber of the cells. We showed that metastable changes of defect distributions, which produce an effect on the electrical characteristics of ZnO/CdS/Cu(In,Ga)Se$\text{}_{2}$ material, affect also the luminescence yield. The dependence of the intensity and shape of the electroluminescence spectra on the state of the sample is observed. These results fit well into the theoretical calculations of Lany and Zunger model showing that divacancy complex (V$\text{}_{Se}$-V$\text{}_{Cu}$) is responsible for metastable changes observed in ZnO/CdS/Cu(In,Ga)Se$\text{}_{2}$-based solar cells. We conclude that during light soaking or/and forward bias the probability of nonradiative recombination is decreased.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 183-189
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Temperature Dependence of Properties of Heterojunctions of Some TCNQ Salts in Polymer Matrices with p- or n-Doped Silicon
Autorzy:
Jeszka, J. K.
Tracz, A.
Boiteux, G.
Seytre, G.
Kryszewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1933656.pdf
Data publikacji:
1995-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
72.80.Le
Opis:
The temperature dependence of the electrical properties of heterojunctions with silicon formed by conductive organic polymer composites with networks of two complex tetracyanoquinodimethane salts (of N-n-butyl-isoquinolinium and of diethyl methyl sulphonium cations) were studied. We show that it is possible to prepare junctions with quite good rectifying properties, comparable to those obtained using other organic semiconductors. The observed forward-bias current-voltage characteristics can be satisfactorily fitted using the modified Schottky equation. Reverse bias and C-V characteristics show that the transport mechanism, especially in the case of p-Si junctions is more complicated and probably tunnelling between localized levels plays an important role.
Źródło:
Acta Physica Polonica A; 1995, 88, 3; 533-541
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Single Temperature Scan Determination of Defect Parameters in DLTS Experiment
Autorzy:
Dobaczewski, L.
Kancleris, Z.
Bonde Nielsen, K.
Peaker, A. R.
Powiązania:
https://bibliotekanauki.pl/articles/1968023.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
71.55.Cn
68.55.Ln
Opis:
Many point and extended defects in silicon, and other semiconducting materials, have been relatively well characterised by the standard DLTS technique. In this method the activation energy of carrier emission from the defect is calculated after multiple temperature scans. In this paper we demonstrate a new approach to the technique, in which after a single temperature scan the complete Arrhenius plot can be constructed for defects present in the sample with considerable concentrations. This method is much faster, accurate, and offers a much higher resolution in comparison with the standard DLTS method.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 724-726
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Quasi Fermi Levels in Semiconductor Photovoltaic Heterojunction
Autorzy:
Orlowski, B.
Pieniazek, A.
Goscinski, K.
Kopalko, K.
Powiązania:
https://bibliotekanauki.pl/articles/1185195.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
Opis:
The photovoltaic heterojunction elements are build of two different semiconductors of n and p type. Under cell illumination the same density of n and p carriers are created in each generation point but it leads to the remarkably higher increase of relative concentration for minority than for majority carriers. It is causing bigger energy change of the quasi Fermi level of minority than of majority carriers. The minority carriers decide of the value of generated photovoltage while the majority carriers contribution to it, in most cases can be neglected. Measured change of the generated open circuit photovoltage versus illumination light intensity allows to estimate corresponding to it increase of the minority carrier concentration. These allows as well to scan the part of the forbidden gap region by the minority carriers quasi Fermi level and in a case of impurity or defect levels located in forbidden gap it can influence on the continuous dependence of generated photovoltage versus light intensity e.g. for pinning of the Fermi level. To create efficient photovoltaic heterojunction it will need to study electronic properties of the used impurities and their proper distribution in the region of junction.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-100-A-102
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Precision of the Hall Quantization in Naturally Occurring Two-Dimensional System - HgCdMnTe Bicrystals
Autorzy:
Grabecki, G.
Wittlin, A.
Dietl, T.
Teunissen, P. A. A.
Wiegers, S. A. J.
Perenboom, J. A. A. J
Powiązania:
https://bibliotekanauki.pl/articles/1921658.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.My
72.80.Ey
73.40.Lq
Opis:
New magnetoresistance measurements on naturally occurring inversion layers adjacent to grain boundaries in narrow gap diluted magnetic semiconductor HgCdMnTe (Eg ≤ 200 meV) have been performed. The magnetic fields up to 20 T simultaneously with millikelvine temperatures have been applied. Possible experimental factors affecting the quantum Hall effect in our system are discussed in detail.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 733-736
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoresponse of Porous Silicon Structures to Infrared Radiation
Autorzy:
Samuolienė, N.
Širmulis, E.
Stupakova, J.
Gradauskas, J.
Zagadskij, V.
Šatkovskis, E.
Powiązania:
https://bibliotekanauki.pl/articles/1505483.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Rb
78.56.-a
73.40.Lq
Opis:
Photoresponse of silicon samples containing porous structures have been studied under the action of $CO_2$ laser radiation. The signal shape and its behavior under the applied bias voltage revealed the existence of two heterojunctions on the border of porous-crystalline silicon and on the border between the porous layers of different porosity. The photosignal is recognized to be composed of hot hole photoemfs induced across the heterojunctions.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 137-139
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Studies of HgCdMnTe Bicrystals
Autorzy:
Grabecki, G.
Wróbel, J.
Karczewski, G.
Powiązania:
https://bibliotekanauki.pl/articles/1879930.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.40.+w
73.40.Lq
Opis:
We report preliminary results of optical measurements performed on Hg$\text{}_{1-x-k}$Cd$\text{}_{x}$Mn$\text{}_{k}$Te grain boundaries. Photovoltaic spectra and I-V characteristics under illumination exhibit metastable behavior, confirming our previous conclusions based on transport measurements under high hydrostatic pressure.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 221-223
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Mott-Schottky Analysis of the $P3HT:ZnS_\text{cubic}$ and $P3HT:ZnS_\text{hexa}$ Bulk Heterojunction Solar Cells
Autorzy:
Abdul Kareem, T.
Powiązania:
https://bibliotekanauki.pl/articles/1398356.pdf
Data publikacji:
2016-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
87.85.Rs
73.40.Lq
73.40.Sx
73.50.Pz
73.61.Ga
73.61.Ph
73.63.Bd
81.05.Dz
88.40.jp
88.40.jr
Opis:
Bulk heterojunction solar cells of sphalerite and wurtzite ZnS incorporated P3HT were fabricated and their Mott-Schottky analysis was performed to find the conduction mechanism of the devices. The analysis shows the formation of a Schottky junction and band unpinning at the P3HT:ZnS-Al contact and it confirms the hole conductivity in the active material.
Źródło:
Acta Physica Polonica A; 2016, 129, 3; 409-413
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Megagauss Cyclotron Resonance and Quantum Hall Effect of 2D Electron Gas in HgCdMnTe
Autorzy:
Grabecki, G.
Takeyama, S.
Dietl, T.
Takamasu, T.
Shimamotο, Y.
Miura, N.
Powiązania:
https://bibliotekanauki.pl/articles/1933749.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Hc
73.50.Fq
73.20.Dx
73.40.Lq
Opis:
Two-dimensional electron gas adjacent to a grain boundary in bicrystal of narrow-gap semiconductor p- Hg$\text{}_{0.79}$Cd$\text{}_{0.19}$Mn$\text{}_{0.02}$Te has been studied under ultra strong impulse magnetic fields (up to 140 T). Both cyclotron resonance and quantum Hall effect are measured for the same samples. The values of the resonance fields point to strong nonparabolicity. A broadening of the line is interpreted in terms of an intersubband mixing that occurs for the upper Landau level. A steep increase in the linewidth in the field range 20-30 T, which coincides with a strong decrease in the Hall resistance is assigned to the field-induced metal-insulator transition in our system.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 731-734
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Lattice Sitting of Platinum Atoms in Diluted SiGe Alloys
Autorzy:
Dobaczewski, L.
Bonde Nielsen, K.
Nylandsted Larsen, A.
Lundsgaard Hansen, J.
Gościński, K.
Peaker, A. R.
Powiązania:
https://bibliotekanauki.pl/articles/1969056.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
71.55.Cn
73.40.Lq
Opis:
In this report we present high-resolution spectra obtained with a use of the Laplace transform deep level transient spectroscopy for platinum diffused into dilute (0-5% of Ge) SiGe alloys. Very significant changes are observed in the spectra associated with the transition metals as the germanium content is altered. We interpret these spectra in terms of the configurations of silicon and germanium atoms surrounding the transition metal. In order to explain the observed behaviour both the first and second nearest neighbour shells are considered.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 297-299
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Iron-Boron Pair in Silicon: Old Problem Anew
Autorzy:
Dobaczewski, L.
Surma, M.
Powiązania:
https://bibliotekanauki.pl/articles/1946552.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
71.55.Cn
73.40.Lq
Opis:
For the iron-boron pair in the p-type silicon two different configurations of the defect are observed: stable and metastable. The reported metastable configuration is the first step in a dissociation process of the stable, i.e. of trigonal symmetry, configuration of the pair. Rate equations for the two-step iron-boron pair dissociation allowed us to evaluate the dissociation rates for both configurations of the pair. The driving force for the creation and, then, dissociation of the metastable pair is the minority carrier injection followed by the electron-hole recombination process in the space charge region. A use of the high-resolution Laplace-transform deep level transient spectroscopy allowed us to demonstrate for both of the configurations the influence of the magnetic field on the hole emission.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 613-622
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 30

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