Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "72.20.Fr" wg kryterium: Wszystkie pola

  Lista filtrów
Wyrównaj
Wyświetlanie 1-15 z 21
Tytuł:
Transport Properties of Disordered Graphene Layers
Autorzy:
Gryglas-Borysiewicz, M.
Jouault, B.
Tworzydło, J.
Lewińska, S.
Strupiński, W.
Baranowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1791293.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.Ac
72.20.Fr
73.43.Qt
73.63.Bd
Opis:
Samples consisting of a few layers of graphene obtained by thermal decomposition of SiC were studied by means of transport experiments at 4 K and in a magnetic field up to 7 T. Transport data show that the samples have a two-dimensional character. Magnetoresistance has an approximately linear character at high magnetic fields, which has been previously observed in graphite samples, and a negative magnetoresistance, at low magnetic fields. The transverse resistivity $ρ_{xy}$ is nonlinear as a function of B, which can be described using a many-carrier model.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 838-840
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transmission Through Graphene Junctions with Rashba Spin-Orbit Coupling
Autorzy:
Rataj, M.
Barnaś, J.
Powiązania:
https://bibliotekanauki.pl/articles/1386718.pdf
Data publikacji:
2015-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
72.80.Vp
73.23.Ad
73.40.Lq
75.70.Tj
Opis:
Electronic transport in a graphene junction is considered theoretically. Graphene is assumed to be deposited on a substrate which generates Rashba spin-orbit coupling. However, the Rashba parameters in the two parts of the junction are assumed to be generally different. Additionally, different gate voltages are applied to the two parts, which allow tuning the Fermi level and potential step. We analyze the probabilities of electron transmission through the junction and electrical conductance in the linear response regime.
Źródło:
Acta Physica Polonica A; 2015, 127, 2; 481-483
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Self-Compensation Mechanism in Semi-Insulating CdMnTe Crystals Intended for X/γ-Ray Detectors
Autorzy:
Yurtsenyuk, N.
Kosyachenko, L.
Sklyarchuk, V.
Maslyanchuk, O.
Sklyarchuk, O.
Grushko, E.
Powiązania:
https://bibliotekanauki.pl/articles/1492970.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
72.80.Ey
78.20.Ci
Opis:
The electrical properties of single $Cd_{1 - x}Mn_{x}Te$ (x= 0.07 - 0.39) crystals with a resistivity of ≈ $10^8$ Ω cm at 300 K have been studied. The electrical conductivity is explained in the terms of statistics of electrons and holes in a semiconductor taking into account the compensation process in impurity-defect complexes. The energy of ionization and the degree of compensation levels have been found.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 957-959
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Pressure Study of Charged Donor Ordering in HgSe Doped with Iron and Gallium
Autorzy:
Skierbiszewski, C.
Suski, T.
Kossut, J.
Wilamowski, Z.
Dobrowolski, W.
Witkowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1891020.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Fk
72.20.Fr
72.80.Jc
Opis:
Transport experiments (Hall effect and conductivity) under hydrostatic pressure up to 1 GPa at liquid helium temperatures on HgSe: Fe, Ga (N$\text{}_{Fe}$ = 2 x 10$\text{}^{19}$ cm$\text{}^{-3}$; 0 ≤ N$\text{}_{Ga}$ ≤ 10$\text{}^{19}$ cm$\text{}^{-3}$) were performed. The results show that the gallium co-doping of HgSe:Fe decreases the degree of spatial correlations between charged impurities. Under the hydrostatic pressure, used as a tool for changing the ratio of the charged to neutral impurities, this effect is even more pronounced. A qualitative agreement between the calculation within the short-range correlation model and our experimental data is achieved.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 401-404
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Peculiarities of Electron Transport in PbTe:Cr due to Presence of Resonant Impurity State
Autorzy:
Grodzicka, E.
Dobrowolski, W.
Kossut, J.
Story, T.
Witkowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1929686.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
72.10.Fk
72.80.Jc
Opis:
The results of transport investigation of Pb$\text{}_{1-x}$Cr$\text{}_{x}$Te (x ≤ 0.009) in temperature range 3.5-300 K are presented. The obtained electron concentration and electron mobility vs. temperature and Cr concentration data are interpreted and discussed within the model assuming that Cr in PbTe forms a donor state resonant with the conduction band.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 599-603
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Orientation of Metastable EL2 under Uniaxial Stress
Autorzy:
Babiński, A.
Wysmołek, A.
Powiązania:
https://bibliotekanauki.pl/articles/1931913.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
72.20.Fr
72.80.Ey
Opis:
Results of electrical resistivity and Hall measurements of n-type GaAs under uniaxial stress along [111] direction performed at low temperature are presented. Alter the transformation of the EL2 defect into its metastable configuration, a stress-induced increase in electrical resistivity related to the capture of electrons by the acceptor state of the metastable EL2([EL2*]$\text{}_{-}\text{}_{/}\text{}_{0}$) was observed. It was found that the stress-induced increase in resistivity depended on the method of EL2-photoquenching. The observed effects are explained as the reorientation of EL2* centers in the crystal. The stress coefficients of the triple degenerate and the single degenerate sublevels of the [EL2*]$\text{}_{-}\text{}_{/}\text{}_{0}$ are found to be equal to -17 meV/GPa and -41 meV/GPa.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 137-140
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Metastability of Localized Neutral Donor State In GaAs
Autorzy:
Skierbiszewski, C.
Jantsch, W.
Lübke, K.
Wilamowski, Z.
Suski, T.
Powiązania:
https://bibliotekanauki.pl/articles/1933994.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
71.55.-i
Opis:
Investigations of the photoconductivity of GaAs:Ge under hydrostatic pressure show, in addition to the well known persistent photoconductivity due to the DX state, another giant photoconductivity caused by a neutral localised "A₁" state of the donor. We find that the top of the barrier for the electron recapture to the Α₁ state is pinned to the conduction band edge and the capture cross-section σ(T → ∞) is surprisingly small.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 905-908
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Carrier Transport in GaN Single Crystals and Radiation Detectors by Thermally Stimulated Methods
Autorzy:
Kažukauskas, V.
Kalendra, V.
Vaitkus, J.-V.
Powiązania:
https://bibliotekanauki.pl/articles/2041765.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Jv
72.20.Fr
72.80.Ey
78.70.-g
85.30.De
Opis:
We investigated single crystals of GaN and thin film GaN radiation detectors by thermally stimulated currents and thermally stimulated depolarization methods in order to characterize carrier transport properties as influenced by material defect structure. In thick GaN no expressed structure of the thermally stimulated current spectra was observed in the temperature range from 100 K up to 350 K, which could be characteristic of the thermal carrier generation from trap levels. The experimental facts imply that the thermally stimulated current spectra might be caused not by carrier generation, but it could be due to thermal mobility changes. Therefore we had applied the numerical analysis by taking into account carrier scattering by ionized impurities and phonons. It was found that mobility limited by ionized impurities varies as T$\text{}^{2.8}$ and lattice scattering causes the dependence T$\text{}^{-3.5}$. The highest mobility values were up to 1550 cm$\text{}^{2}$/(V s) at 148-153 K. Such high values indicate relatively good quality of the single GaN thick crystals. In high resistivity GaN detectors irradiated by high doses of high-energy neutrons and X-rays current instabilities were observed which could be caused by the change of carrier drift paths in a highly disordered matter. A model of carrier percolation transport is presented.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 340-345
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Irradiation by High-Energy Protons on GaN Detectors
Autorzy:
Kažukauskas, V.
Kalendra, V.
Vaitkus, J.
Jasiulionis, R.
Powiązania:
https://bibliotekanauki.pl/articles/1813395.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Jv
72.20.Fr
72.80.Ey
78.70.-g
85.30.De
Opis:
We had investigated effects of the irradiation by 24 GeV protons with doses ranging from $1×10^{14}$ up to $1×10^{16} p//cm^2$ on the properties of GaN ionising radiation detectors. In theγ-spectra of the samples radiation of $\text{}^7Be,$ $\text{}^{22}Na,$ and other long-lived radionuclides with A <70 was identified. Their activities were proportional to the irradiation dozes. Device contact properties were analysed by current-voltage I-V dependences. Created defects were revealed by the thermally stimulated defect spectroscopy. In the less irradiated samples the following values of the effective thermal activation energies were found: 0.12-0.16 eV, 0.18-0.22 eV, 0.35-0.42 eV, and 0.84-0.94 eV. Meanwhile, in the detectors irradiated with the highest doses only current growth with the activation energy of about 0.8-1.0 eV could be identified. Effects of percolation transport in disordered media were proved in the irradiated material.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 1013-1016
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Improvement of Electrical Properties of Hg$\text{}_{1-x}$Zn$\text{}_{x}$Se upon Doping with Fe
Autorzy:
Dobrowolski, W.
Grodzicka, E.
Kossut, J.
Witkowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1921589.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
72.20.Fr
71.55.Fr
Opis:
Results of measurements of electron concentration and mobility in mixed crystals of Hg$\text{}_{1-x}$Zn$\text{}_{x}$Se (0 ≤ x ≤ 0.07) doped with resonant Fe donors (0 ≤ n$\text{}_{Fe}$ ≤ 5 × 10$\text{}^{19}$ cm$\text{}^{-3}$) at liquid helium temperatures are presented. The data show that there is a considerable improvement of the electrical properties of the material when Fe impurities are present. The analysis of the mobility in terms of the scattering from ionized centers (accounting for possible spatial correlation of impurity charges) and the alloy scattering is in agreement with the measured data.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 681-684
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hole Scattering in GaSb: Scattering on Space Charge Regions Versus Dipole Scattering
Autorzy:
Pődör, B.
Powiązania:
https://bibliotekanauki.pl/articles/2044528.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
72.20.Dp
72.80.Ey
Opis:
Hole concentration and mobility were investigated by Hall measurements in nominally undoped p-type GaSb in the temperature range from 77 to 300 K. The dependence of the thermal ionization energy of native acceptors on the acceptor centre concentration and on the compensation degree was determined. The temperature dependence of the hole mobility was analyzed using a heuristic semi-empirical model as well as using a phenomenological two-hole band model. Space charge scattering and/or dipole scattering described with a mobility contribution with a~ T$\text{}^{-1}\text{}^{/}\text{}^{2}$ like temperature dependence dominated the hole mobility in the investigated temperature range.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 837-844
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
HgSe Based Mixed Crystals Doped with Fe Resonant Donors
Autorzy:
Dobrowolski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1943963.pdf
Data publikacji:
1996-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
72.10.Fk
71.55.Gs
Opis:
The article reviews the physical properties of semimagnetic semiconductors of the type Hg$\text{}_{1-x-y}$Fe$\text{}_{x}$A$\text{}_{y}^{II}$Se$\text{}_{1-z}$B$\text{}_{z}^{VI}$ and Hg$\text{}_{1-x-y}$Fe$\text{}_{x}$Mn$\text{}_{y}$Se. Optical, magnetooptical, transport and magnetotransport experiments showed that in Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se substitutional iron forms a resonant donor state whose energy is superimposed on the conduction band continuum. Resulting anomalous properties of electron scattering rate, i.e. strong enhancement of electron mobility (or drop of Dingle temperature), which occur in Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se at low temperatures in a certain Fe concentration range, are described. Next, theoretical models describing this anomalous reduction of the scattering rate are discussed. The description of thermomagnetic, optical, magnetooptical and magnetic properties of Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se, with emphasis on features originating from the peculiar iron level position in the band structure of Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se, conclude the first part of the present paper. In the second part the physical properties of the semiconducting alloys Hg$\text{}_{1-x}$Mn$\text{}_{x}$Se:Fe, Hg$\text{}_{1-v}$Cd$\text{}_{v}$Se:Fe, Hg$\text{}_{1-x}$Zn$\text{}_{x}$Se:Fe, HgSe$\text{}_{1-x}$Te$\text{}_{x}$:Fe and HgSe$\text{}_{1-x}$S$\text{}_{x}$:Fe are described. In particular, the dependence of the position of the Fe resonant donor state in the band structure on the crystal composition is discussed. The values of predicted Γ$\text{}_{6}$ and Γ$\text{}_{8}$ band offsets between HgSe and CdSe, HgTe, MnSe and ZnSe are given. The considerable attention is paid to the discussion of the mechanism limiting the electron mobility in the mixed alloys. Finally, topics which have not been explicitly covered in this review are mentioned and open problems are discussed.
Źródło:
Acta Physica Polonica A; 1996, 89, 1; 3-36
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Experimental and Theoretical Analysis οf PbTe-CdTe Solid Solution Grown by Physical Vapour Transport Method
Autorzy:
Szot, M.
Szczerbakow, A.
Dybko, K.
Kowalczyk, L.
Smajek, E.
Domukhovski, V.
Łusakowska, E.
Dziawa, P.
Mycielski, A.
Story, T.
Bukała, M.
Galicka, M.
Sankowski, P.
Buczko, R.
Kacman, P.
Powiązania:
https://bibliotekanauki.pl/articles/1791366.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Bk
61.50.Ah
71.20.Nr
78.60.Lc
72.20.Fr
Opis:
Bulk monocrystals of $Pb_{1-x}Cd_{x}Te$, with the Cd content x up to 0.11, were grown by physical vapour transport method. The structural, electrical and optical properties of these ternary crystals were studied experimentally and theoretically. All investigated samples exhibit rock-salt structure and high crystal quality, which was confirmed by X-ray rocking curve width parameter of about 100 arcsec. The decrease of the lattice parameter with increasing Cd content x was found experimentally, in agreement with ab initio calculations. The band structures of $Pb_{1-x}Cd_{x}Te$ mixed crystals for x values up to 0.2 were calculated using tight binding approach. The calculated band gap in the L-point increases with the Cd content in qualitative agreement with photoluminescence measurements in the infrared. For all studied $Pb_{1-x}Cd_{x}Te$ samples, the Hall effect and electrical conductivity measurements, performed in the temperature range from 4 to 300 K, revealed p-type conductivity.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 959-961
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Evidence for Alloy Splitting of Ge Related DX State in Al$\text{}_{x}$Ga$\text{}_{1-x}$As
Autorzy:
Skierbiszewski, C.
Piotrzkowski, R.
Lubke, K.
Powiązania:
https://bibliotekanauki.pl/articles/1992190.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
72.20.Fr
Opis:
Thermal emission from resonant DX levels in Ge-doped GaAlAs was studied by measuring the temperature transients of free electron concentration. Pressure was used to fill the levels with electrons. Two emission peaks are observed in AlGaAs:Ge. This enables us to confirm that Ge, similarly to Si dopant, is stabilized upon dangling bond C$\text{}_{3v}$ configuration in AlGaAs. Analysis of experimental data allows us to determine parameters of two components of the DX multilevel system. Evaluated alloy splitting of ground and top of the barrier states: 45 meV is comparable with determined for Si donor.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 531-533
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Scattering and the Band Structure of Mixed Crystals Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se
Autorzy:
Skierbiszewski, C.
Wilamowski, Z.
Suski, T.
Kossut, J.
Witkowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1923803.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Fk
72.20.Fr
72.80.Jc
Opis:
In this paper the dependence of the band structure and the electron scattering mechanisms on the molar fraction x are studied in Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se. The crossover from the zero-gap band to the open band-gap configuration at x ≈ 0.08 is predicted. We explain the drop of the electron mobility for x > 0.002 by the alloy scattering mechanism.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 809-812
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 21

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies