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Wyświetlanie 1-15 z 48
Tytuł:
Surface Stability of Ordered Ga$\text{}_{0.5}$In$\text{}_{0.5}$P and GaAs$\text{}_{0.5}$Sb$\text{}_{0.5}$ Alloys
Autorzy:
Bogusławski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1877570.pdf
Data publikacji:
1991-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.55.Hg
68.65.+g
68.60.Dv
Opis:
Formation enthalpies of (001) surfaces terminating ordered Ga$\text{}_{0.5}$In$\text{}_{0.5}$P and GaAs$\text{}_{0.5}$Sb$\text{}_{0.5}$ alloys were calculated using the VFF model. For several ordered phases, chemically ordered surfaces were found to be stable against surface segregation. In particular, even phases unstable against bulk segregation may be terminated by a stable surface.
Źródło:
Acta Physica Polonica A; 1991, 79, 1; 125-128
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thermodynamic Stability of Two Rhombohedral Phases of Si$\text{}_{0.5}$Ge$\text{}_{0.5}$ Alloy
Autorzy:
Bogusławski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1890689.pdf
Data publikacji:
1991-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.55.Hg
68.35.Md
68.60.Dv
Opis:
Thermodynamic stability of two ordered phases, RS1 and RS2, of Si$\text{}_{0.5}$Ge$\text{}_{0.5}$ alloy is considered. Bulk and surface formation enthalpies are calculated using the model Tersoff's potential. RS2 structure is unstable, but its (001) ordered surface is stable against segregation. Properties of RS1 are just the opposite.
Źródło:
Acta Physica Polonica A; 1991, 80, 2; 299-302
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On the Temperature-Dependent Surface Structure of Metals
Autorzy:
Bonzel, H. P.
Breuer, U.
Powiązania:
https://bibliotekanauki.pl/articles/1892524.pdf
Data publikacji:
1992-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Rh
68.35.Md
79.60.Cn
82.65.Dp
Opis:
Recent experimental results based on X-ray photoelectron diffraction from a Pb(110) crystal are discussed in terms of surface roughening and surface melting. In comparison to other reports on Pb(110) surface roughening it is recognized that the correct determination of the roughening transition on (110) surfaces of fcc metals may be intrinsically difficult because of anisotropy. A novel technique for investigating the temperature-dependent surface free energy is described. The method involves the quasi-steady-state shape of periodic surface profiles on Au(111) and Au(100) single crystals. First results are reported for two crystallographic zones (111)⟨112⟩ and (100)⟨110⟩ of Au. These results illustrate the strong anisotropy of Δγ/γ of ~23% and ~ 4% at T = 0 K for the (111)⟨112⟩ and (100)⟨110⟩ zones, respectively. The data suggest that the low-index surfaces of Au(111) and (100) are not likely to roughen at T ≤ T_{M}.
Źródło:
Acta Physica Polonica A; 1992, 81, 2; 265-272
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Oxidation of Polycrystalline Chromium between 30°C and 400°C
Autorzy:
Thurner, G.
Holloway, P. H.
Powiązania:
https://bibliotekanauki.pl/articles/1892527.pdf
Data publikacji:
1992-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.60.Bn
68.55.Nq
07.80.+x
Opis:
The formation of coalesced oxide films on atomically clean polycrystalline chromium has been studied with Auger electron spectroscopy and secondary ion mass spectrometry at temperatures between 30°C and 400°C. The data are consistent with an initialed chemisorption of oxygen on the clean Cr followed by nucleation of chromium oxide after 2 L of exposure followed by lateral growth to form a thin, coalesced, saturated oxide film about 0.8 nm thick at 30°C. The saturated oxide was thicker at higher temperatures, being about 80 nm thick at 400°C. Detection of a CrO$\text{}^{+}$ secondary ion was associated with chemisorbed oxygen, while O¯ ion originated from chromium oxides based upon correlation with chemical changes in the low-energy Auger spectra. Keating of the coalesced oxide caused considerable changes in both the low-energy Auger spectrum as well as the secondary ion emission. Both these as well as time-dependent, reversible changes in secondary ion emission were interpreted as structural rearrangements of the chromium oxide resulting in relative changes of oxygen either adsorbed on the surface or incorporated into chromium oxide.
Źródło:
Acta Physica Polonica A; 1992, 81, 2; 273-283
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Progress into Understanding of Alkali Metal Interaction with a Silicon Surface
Autorzy:
Soukiassian, P.
Powiązania:
https://bibliotekanauki.pl/articles/1892155.pdf
Data publikacji:
1992-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.-p
73.20.At
79.60.Eq
82.65.My
Opis:
The atomic and electronic structure and interface formation of alkali metal (Na, K, Rb, Cs) and Si(100)2 × 1 surfaces is investigated by photoemission - XPS, UPS - using synchrotron radiation, scanning tunneling microscopy (STM) and by photoemission extended X-ray absorption fine structure (PEXAFS) experiments. The XPS-UPS results indicate that the alkali metal-silicon bond is a weak and polarized covalent bonding even at low coverages with adsorbate metallization at the monolayer. In contrast to III-V semiconductor surfaces, alkali metals do not induce significant structural changes of the surface: STM images performed with atomic resolution for the representative K/Si(100)2×1 systems demonstrate that, at one mono-layer coverage, the K atoms form one-dimensional linear metallic chains parallel to the Si dimers rows ⟨110⟩ direction and distant by 7.68 Å with a single site of adsorption. Below half a monolayer, the K atoms occupy various coexisting sites with no long range order. An ordering transition occurs around half a monolayer in which the adsorbate-adsorbate interaction, which was so far neglected in theoretical calculations, appears to be the leading driving force. The proposed models and concepts are discussed and compared to the latest state-of-art theoretical calculations.
Źródło:
Acta Physica Polonica A; 1992, 81, 1; 19-32
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Resonant Phonons in Adsorbed Slabs
Autorzy:
Dobrzynski, L.
Akjouj, A.
Syla, B.
Djafari-Rouhani, B.
Powiązania:
https://bibliotekanauki.pl/articles/1892256.pdf
Data publikacji:
1992-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.60.-p
Opis:
Resonant phonons, sometimes also called leaky waves, are phonons associated with a crystal defect, a surface, an adsorbed layer and whose frequencies fall inside the bulk crystal band. Such resonant phonons were studied experimentally and theoretically before for clean surfaces and for adsorbed monolayers. We present here a study of resonant phonons associated with the adsorption of a slab of L monolayers on a substrate. With the help of a simple atomic model, we obtained a closed form expression giving the variation of the transverse phonon density of states associated with the adsorption of the slab. An application which qualitatively simulates the adsorption of L monolayers of Ge on Si shows the existence of well-defined resonant phonons within the bulk acoustic band of the substrate.
Źródło:
Acta Physica Polonica A; 1992, 81, 1; 85-90
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Exciton Dynamics in CdTe/CdMnTe Multiquantum Well Structures Grown by Molecular Beam. Epitaxy on GaAs Substrate
Autorzy:
Godlewski, M.
Koziarska, B.
Suchocki, A.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Bergman, J.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1934057.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.60.-p
78.47.+p
73.20.Fz
71.35.+z
Opis:
The results of picosecond photoluminescence kinetics of four different CdTe/CdMnTe multiquantum well structures grown by MBE on GaAs substrates are presented. The experimental results show that excitons in CdTe quantum wells are strongly localized by potential fluctuations. Photoluminescence decay times of the localized excitons are considerably shorter (about 120 ps) than those reported for free or quasi-free excitons. An influence of Mn in the barriers on exciton properties is demonstrated. For narrow quantum wells as well as for the multiquantum well structure with the highest Mn mole fraction the excitons migrate during their decay to the states with a lower potential energy. Longer decay times are observed for quasi-localized excitons. We show also that for strongly localized excitons the energy transfer between localized and donor bound excitons is less efficient.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 985-989
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Characterization of CdZnSe/ZnSe Multiquantum Well System
Autorzy:
Godlewski, M.
Karpińska, K.
Bergman, J. P.
Monemar, B.
Kurtz, E.
Hommel, D.
Powiązania:
https://bibliotekanauki.pl/articles/1932081.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.60.-p
71.35.+z
76.70.Hb
Opis:
Optical properties of Cd$\text{}_{x}$Zn$\text{}_{1-x}$Se/ZnSe (x = 0.12) multiquantum well system are discussed. The transient photoluminescence and optically detected cyclotron resonance experiments demonstrate a strong contribution of bound exciton emission to the low temperature photoluminescence spectra.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 209-212
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Unusual Time Dependence of Magnetization Relaxation in MBE Grown Epilayer of CdMnTe
Autorzy:
Witowski, A. M.
Moll, H. P.
Wyder, P.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1934049.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.60.Wm
76.30.Fc
Opis:
The temporal behavior of the magnetization due to the spin-lattice relaxation for bulk and MBE grown epilayer of CdMnTe is compared. The time dependence of the epilayer magnetization changes (dM/dt) is nonmonotonic. After the main part, a second structure appears. It can be explained only by the assumption of energy storage and a delayed additional rise of specimen temperature. The nature of the storage is unknown.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 953-956
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Growth Conditions on Optical Properties of ZnCdSe/ZnSe Quantum Wells Grown by Molecular Beam Epitaxy
Autorzy:
Godlewski, M.
Bergman, J. P.
Monemar, B.
Kurtz, E.
Hommel, D.
Powiązania:
https://bibliotekanauki.pl/articles/1950749.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.60.-p
71.35.+z
76.70.Hb
Opis:
The results of investigations of photoluminescence, time-resolved photoluminescence, photoluminescence kinetics and their temperature dependencies are discussed for two types of ZnCdSe/ZnSe multi quantum well structures - for pseudomorphic and for strain relaxed structure. Densities of 2D localized states and averaged localization energies, as seen by excitons, are determined from the photoluminescence kinetics measurements. We show distinct differences between exciton properties in two multi quantum well structures studied.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 785-788
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Enhanced Exciton-Phonon Interaction in Strained ZnCdSe/ZnSe Quantum Well Structures
Autorzy:
Godlewski, M.
Leonardi, K.
Hommel, D.
Powiązania:
https://bibliotekanauki.pl/articles/1968093.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.60.-p
76.70.Hb
Opis:
Radiative recombination processes in pseudomorphic ZnCdSe/ZnSe structures are compared to those observed in strain-relaxed structures grown on GaAs substrates with thick ZnSe buffer layers. From the temperature dependence of the photoluminescence line width we evaluate the strength of exciton-phonon interaction with acoustic (dominant at lower temperatures) and optical phonons. Stronger exciton-phonon interaction is observed for pseudomorphic structures. Such enhanced exciton-phonon interaction is likely responsible for a faster photoluminescence deactivation at increased temperatures. We also report different exciton properties (photoluminescence intensity, width, strength of exciton-phonon interaction) in quantum well of a given width but in structures grown with different order of quantum wells. More stable photoluminescence (with increasing temperature) is observed for a given quantum well if it is closer to the buffer layer and not to the cap layer.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 769-773
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Garnet Single Crystal as Substrate Material for HTSC Films
Autorzy:
Mukhopadhyay, P.
Powiązania:
https://bibliotekanauki.pl/articles/1964306.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
68.60.-p
74.76.Bz
81.15.-z
Opis:
The use of high temperature superconductor for device application has made the compatibility of the film and substrate an important issue. Garnets having reasonably low dielectric constant and low dielectric losses can be viable low cost substrate materials for the microwave devices. Garnet single crystals like Gd$\text{}_{3}$Ga$\text{}_{5}$O$\text{}_{12}$ (GGG), Y$\text{}_{3}$Ga$\text{}_{5}$O$\text{}_{12}$ (YGG), Y$\text{}_{3}$Al$\text{}_{5}$O$\text{}_{12}$ (YAG) etc. can be potential HTSC substrate materials for microwave devices. Properties of HTSC films on some of these garnet crystals are compared here.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 147-151
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nonradiative Recombination Processes in (CdTe,CdCrTe)/CdMgTe Quantum Well Structures
Autorzy:
Godlewski, M.
Ivanov, V.
Zakrzewski, A. J.
Wojtowicz, T.
Karczewski, G.
Kossut, J.
Bergman, J. P.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1968108.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.60.-p
76.70.Hb
Opis:
Photoluminescence transitions in (CdTe,CdCrTe)/CdMgTe structure grown by molecular beam epitaxy are studied. Photoluminescence investigations show a very strong reduction of the photoluminescence intensity from chromium doped quantum wells. We explain this fact by a very efficient nonradiative recombination in the chromium-doped quantum wells. The present results indicate that the Auger-type energy transfer from excitons to chromium ions is responsible for the photoluminescence deactivation. The efficiency of this process is evaluated.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 781-784
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport Properties of Silicon δ-Doped Gaas in High Electron Density Regime
Autorzy:
Buyanov, A. V.
Holtz, P. O.
Pozina, G.
Monemar, B.
Thordson, J.
Andersson, T. G.
Powiązania:
https://bibliotekanauki.pl/articles/1968047.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.60.+g
61.72.Vv
68.55.Ln
Opis:
We report results for Si layers embedded in GaAs, extending from the delta-doped (δ-doped) range up to 6 monolayers derived by means of variable temperature resistivity and Hall effect measurements, secondary ion mass spectrometry and high resolution X-ray diffractometry techniques. The conductivity transition from free carrier transport in ordered δ-layers (<1 ML) to strongly-localized two-dimensional variable range hopping transport under potential fluctuation disordered conditions (>4 ML) is clearly observed. This observation is in good agreement with the secondary ion mass spectrometry and high resolution X-ray diffractometry data. Results from the intermediate case with 2-3 MLs are also discussed.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 727-732
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Near Field Optical Microscopy and Spectroscopy with STM and AFM Probes
Autorzy:
Bergossi, O.
Bachelot, R.
Wioland, H.
Wurtz, G.
Laddada, R.
Adam, P. M.
Bijeon, J. L.
Royer, P.
Powiązania:
https://bibliotekanauki.pl/articles/1968764.pdf
Data publikacji:
1998-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.60.Pb
42.62.Fi
61.16.Ch
68.35.Bs
Opis:
This article deals with a new generation of scanning near field optical microscopes (SNOM), called apertureless SNOM, based on metallic, semi-conductive or dielectric probes. The classification of the apertureless probe among the usual SNOM probes is discussed in the first part. Then, we present the different apertureless SNOM configurations that we develop, with various commercial AFM and home-made tungsten tips, and several illumination and collection modes. Finally, after a preliminary result in near field imaging, we propose a promising application of such microscopes dedicated to the near field fluorescence spectroscopy.
Źródło:
Acta Physica Polonica A; 1998, 93, 2; 393-398
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 48

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