Exciton Dynamics in CdTe/CdMnTe Multiquantum Well Structures Grown by Molecular Beam. Epitaxy on GaAs Substrate

The results of picosecond photoluminescence kinetics of four different CdTe/CdMnTe multiquantum well structures grown by MBE on GaAs substrates are presented. The experimental results show that excitons in CdTe quantum wells are strongly localized by potential fluctuations. Photoluminescence decay times of the localized excitons are considerably shorter (about 120 ps) than those reported for free or quasi-free excitons. An influence of Mn in the barriers on exciton properties is demonstrated. For narrow quantum wells as well as for the multiquantum well structure with the highest Mn mole fraction the excitons migrate during their decay to the states with a lower potential energy. Longer decay times are observed for quasi-localized excitons. We show also that for strongly localized excitons the energy transfer between localized and donor bound excitons is less efficient.