Autor: Zakrzewski, J - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: On the Symmetry of the Sulfur Pair-Related Defect in Silicon
Autorzy:: Bennebroek, M. T.
Zakrzewski, A.
Frens, A. M.
Schmidt, J.
Powiązania:: https://bibliotekanauki.pl/articles/1929739.pdf
Data publikacji:: 1993-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 76.30.Lh
71.55.Ht
Opis:: A sulfur-related-pair defect in silicon has been studied with optically detected magnetic resonance spectroscopy. Measurement of the angular dependence of the optically detected magnetic resonance signals supplemented by the analysis of the spectrum "quality" yield to the conclusion that the point group symmetry of the defect studied is C$\text{}_{1h}$.
Źródło:: Acta Physica Polonica A; 1993, 84, 4; 725-728
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Cubic MnTe - Growth by Molecular Beam Epitaxy and Basic Structural Characterization
Autorzy:: Zakrzewski, A.
Janik, E.
Dynowska, E.
Leszczyński, M.
Kutrowski, M.
Wojtowicz, T.
Karczewski, G.
Bąk-Misiuk, J.
Domagała, J.
Kossut, J.
Powiązania:: https://bibliotekanauki.pl/articles/1873112.pdf
Data publikacji:: 1995-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.50.Pp
68.55.Bd
68.55.Jk
Opis:: We report on growth by molecular beam epitaxy of thick layers of MnTe with zinc blende structure. Films as thick as 5.6 µm were obtained. Characterization by X-ray diffraction proved their good structural quality. We determined the lattice constant and its temperature dependence. Broad luminescence due to internal Mn$\text{}^{2+}$- transitions was observed. It showed an unexpected temperature dependence.
Źródło:: Acta Physica Polonica A; 1995, 87, 2; 433-436
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Lattice Parameter Relaxation during MBE of ZnTe/Cd$\text{}_{1-x}$Zn$\text{}_{x}$Te/Cd$\text{}_{0.5}$Zn$\text{}_{0.5}$Te Buffer Layers by RHLED and HRTEM
Autorzy:: Kret, S.
Karczewski, G.
Zakrzewski, A.
Dłużewski, P.
Dubon, A.
Wojtowicz, T.
Kossut, J.
Delamarre, C.
Laval, J. Y.
Powiązania:: https://bibliotekanauki.pl/articles/1933838.pdf
Data publikacji:: 1995-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.16.Bg
61.14.Hg
68.35.-p
Opis:: The dynamics of the lattice relaxation processes were investigated using a reflection of a high energy electron diffraction analysis system during growth by molecular beam epitaxy of ZnTe/Cd$\text{}_{1-x}$Ζn$\text{}_{x}$Te/Cd$\text{}_{0.5}$Mn$\text{}_{0.5}$Te buffers on GaAs substrates. The variation of the lattice parameter recorded by the high energy electron diffraction during the growth was later confirmed by an analysis of high resolution transmission electron microscopy images. We report also on an observation of oscillations of the lattice parameter during the deposition of several first layers of ZnTe on CdTe.
Źródło:: Acta Physica Polonica A; 1995, 88, 4; 795-798
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Luminescence Decay in Deep Quantum Wells CdTe/Cd_{0.5}Mn_{0.5}Te at Room Temperature
Autorzy:: Kowalczyk, L.
Fancey, S.
Buller, G.
Massa, J.
Kutrowski, M.
Janik, E.
Karczewski, G.
Wojtowicz, T.
Zakrzewski, A.
Kossut, J.
Powiązania:: https://bibliotekanauki.pl/articles/1876908.pdf
Data publikacji:: 1995-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.66.Hf
78.47.+p
78.55.Et
Opis:: Time-resolved photoluminescence was used to study exciton recombination in deep CdTe/Cd_{0.5}Mn_{0.5}Te single quantum well. The width of the investigated well was 100 A. The study was performed at room temperature. The lifetime of the exciton determined in this work has a value comparable to that observed in shallow CdTe/Cd_{0.85}Mn_{0.15}Te quantum wells. A strong enhancement of the photoluminescence decay time with increasing intensity of the exciting laser beam is observed which is indicative of saturation of the non-radiative recombination centers.
Źródło:: Acta Physica Polonica A; 1995, 87, 2; 508-513
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Indium Doping of CdTe Grown by Molecular Beam Epitaxy
Autorzy:: Karczewski, G.
Zakrzewski, A.
Kutrowski, M.
Jaroszyński, J.
Dobrowolski, W.
Grodzicka, E.
Janik, E.
Wojtowicz, T.
Kossut, J.
Barcz, A.
Powiązania:: https://bibliotekanauki.pl/articles/1932089.pdf
Data publikacji:: 1995-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.55.Ln
73.61.Ga
Opis:: We report on n-type indium doping of CdTe films grown by molecular beam epitaxy on (001) GaAs substrates. By adjusting the flux of In atoms we can precisely control the carrier concentration over three orders of magnitude - from 8 × 10$\text{}^{14}$ up to 1.3 × 10$\text{}^{18}$ cm$\text{}^{-3}$. In agreement with earlier reports we confirmed that Cd overpressure plays an important role in the doping process. The doping appears to be most effective for Cd/Te pressure ratio of 1.5. For this value of Cd/Te pressure ratio essentially 100% efficiency of doping is achieved at low In concentrations (< 10$\text{}^{18}$ cm$\text{}^{-3}$). At higher In concentrations acceptor impurities compensate shallow donors limiting the concentration of free carriers.
Źródło:: Acta Physica Polonica A; 1995, 87, 1; 241-244
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 6.

Tytuł:: Spatial Correlations of Donor Charges in MBE CdTe
Autorzy:: Suski, T.
Wiśniewski, P.
Litwin-Staszewska, E.
Wasik, D.
Przybytek, J.
Baj, M.
Karczewski, G.
Wojtowicz, T.
Zakrzewski, A.
Kossut, J.
Powiązania:: https://bibliotekanauki.pl/articles/1934021.pdf
Data publikacji:: 1995-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.80.Ey
71.55.Gs
Opis:: We present experimental evidence that at high pressures indium donors in CdTe localize electrons in spatially correlated manner. We have studied Hall mobility, μ$\text{}_{H}$, as a function of electron concentration, n$\text{}_{H}$, at T=77 K. Changes of n$\text{}_{H}$ have been achieved by two methods. High pressure freeze-out of electrons onto localized states of In-donors leads to the mobility enhancement with respect to the situation when n$\text{}_{H}$ has been modified by means of a subsequent annealing of the sample. As a result, depending on the degree of spatial correlations in the impurity charges arrangement, different values of μ$\text{}_{H}$ correspond to the same value of n$\text{}_{H}$. The variation of mobility with electron concentration suggests that the localized state of In-donor represents likely negatively charged DX state.
Źródło:: Acta Physica Polonica A; 1995, 88, 5; 929-932
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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