Lattice Parameter Relaxation during MBE of ZnTe/Cd$\text{}_{1-x}$Zn$\text{}_{x}$Te/Cd$\text{}_{0.5}$Zn$\text{}_{0.5}$Te Buffer Layers by RHLED and HRTEM

The dynamics of the lattice relaxation processes were investigated using a reflection of a high energy electron diffraction analysis system during growth by molecular beam epitaxy of ZnTe/Cd$\text{}_{1-x}$Ζn$\text{}_{x}$Te/Cd$\text{}_{0.5}$Mn$\text{}_{0.5}$Te buffers on GaAs substrates. The variation of the lattice parameter recorded by the high energy electron diffraction during the growth was later confirmed by an analysis of high resolution transmission electron microscopy images. We report also on an observation of oscillations of the lattice parameter during the deposition of several first layers of ZnTe on CdTe.