Temat: 72.70.+m - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: High-Frequency Noise in Modern FET/HEMT Channels Caused by the Excitation of 2D-Plasma Waves
Autorzy:: Shiktorov, P.
Starikov, E.
Gružinskis, V.
Varani, L.
Reggiani, L.
Powiązania:: https://bibliotekanauki.pl/articles/1505464.pdf
Data publikacji:: 2011-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.Ht
72.30.+q
72.70.+m
Opis:: The problems related with the intrinsic noise in FET/HEMT channels induced by continuous branching of the total current between channel and gate are considered in the framework of a simple analytical model and its predictions on the current-noise spectra. Main branching-induced effects such as the appearance of an additional noise related to the excitation of plasma waves, its dependence on FET/HEMT embedding circuits, interference properties, etc. are analysed.
Źródło:: Acta Physica Polonica A; 2011, 119, 2; 117-120
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Theoretical Investigation of Large-Signal Noise in Nanometric Schottky-Barrier Diodes Operating in External Resonant Circuits
Autorzy:: Shiktorov, P.
Starikov, E.
Gružinskis, V.
Varani, L.
Vaissière, J.
Reggiani, L.
Pérez, S.
González, T.
Powiązania:: https://bibliotekanauki.pl/articles/1178800.pdf
Data publikacji:: 2005-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.Ht
72.30.+q
72.70.+m
Opis:: We report Monte Carlo simulations of electronic noise in heavily doped nanometric GaAs Schottky-barrier diodes operating in series with a parallel resonant circuit when a high-frequency large-signal voltage is applied to the whole system. Significant modifications of the noise spectrum with respect to the unloaded diode are found to occur in the THz-region.
Źródło:: Acta Physica Polonica A; 2005, 107, 2; 396-399
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Analysis of Conditions for Free-Carrier Grating Formation in InP n⁺nn⁺ Structures using Monte Carlo Technique
Autorzy:: Gružinskis, V.
Shiktorov, P.
Starikov, E.
Powiązania:: https://bibliotekanauki.pl/articles/1813353.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.Ht
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Opis:: Electron transport in 5μm long InP n⁺nn⁺ structure with the n-region doping of $10^{15} cm^{-3}$ is theoretically investigated by the Monte Carlo particle technique at low lattice temperature (T = 10 K), when dominating scattering mechanism is the optical phonon emission. It is shown that at the constant bias a free-carrier grating can be formed inside the n-region. The free-carrier grating formation conditions are analysed by Monte Carlo particle simulation of electric field profiles and noise in the considered InP structure.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 943-946
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Plasma Instability Noise in InP n⁺nn⁺ Structures: Monte Carlo Simulation
Autorzy:: Gružinskis, V.
Shiktorov, P.
Starikov, E.
Powiązania:: https://bibliotekanauki.pl/articles/1813377.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.Ht
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72.70.+m
Opis:: The current noise in n⁺nn⁺ InP structures at dominating low temperature (T = 10 K) optical phonon emission is simulated by Monte Carlo particle technique. The n-region length of simulated structures is varied from 1 to 100 μm. The peaks related to the near collisionless and optical phonon emission dominated plasma instabilities are recognized in current noise spectral density spectra.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 947-950
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Monte Carlo Calculation of High Frequency Mobility and Diffusion Noise in Nitride-Based Semiconductors
Autorzy:: Starikov, E.
Shiktorov, P.
Gružinskis, V.
Varani, L.
Vaissière, J. C.
Palermo, C.
Reggiani, L.
Powiązania:: https://bibliotekanauki.pl/articles/2041806.pdf
Data publikacji:: 2005-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.Ht
72.30.+q
72.70.+m
Opis:: Monte Carlo simulations of high-field transport in semiconductor nitrides, GaN and InN, is used to calculate the velocity-field characteristics and the high-frequency behavior of the differential mobility, spectral density of velocity fluctuations, and noise temperature. It is found that due to very short relaxation time scales of nitrides, the characteristic frequencies associated with extrema and cutoff decay of the negative differential mobility, etc. are shifted to higher frequency range with respect to the case of standard A$\text{}_{3}$B$\text{}_{5}$ compounds. This property is favorable for applications of nitrides in the THz frequency range.
Źródło:: Acta Physica Polonica A; 2005, 107, 2; 408-411
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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