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    Wyświetlanie 1-13 z 13
    Tytuł:
    Tailoring the Internal Evaporator for Effective Ion Beam Production - Volatile vs. Non-Volatile Substances
    Autorzy:
    Turek, M.
    Droździel, A.
    Pyszniak, K.
    Prucnal, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402239.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.77.Ka
    34.80.Dp
    61.72.uj
    Opis:
    Two different designs of the internal evaporator in an arc discharge ion source are presented, suitable either for volatile, or high-melting point substances. A matter of the evaporator size and placement in order to obtain its appropriate temperature and, therefore, a stable and intense ion beam, is considered. Basic ion source characteristics, i.e. the dependences of ion current and discharge voltage on the discharge and filament currents as well as on the external magnetic field flux density are shown and discussed in order to find optimal working conditions. The results of measurements for both volatile (P, Zn, Se, S) and non-volatile (Pd) are presented, showing the applicability of the design for ion implantation purposes.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 939-942
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Production of Doubly Charged Ions Using a Hollow Cathode Ion Source with an Evaporator
    Autorzy:
    Turek, M.
    Droździel, A.
    Pyszniak, K.
    Mączka, D.
    Słowiński, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400444.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.77.Ka
    34.80.Dp
    61.72.uj
    Opis:
    The paper describes the production of doubly charged ions from solids and gases using a hollow cathode ion source with an internal evaporator heated by a spiral cathode filament and arc discharge. The obtained currents were 15 μA for $Bi^{2+}$, 10 μA for $As^{2+}$ and $Al^{2+}$, 8 μA for $Kr^{2+}$ and $Xe^{2+}$, 5 μA for $In^{2+}$ and $Ge^{2+}$, enabling moderate dose implantations ( ≈ $10^{15} cm^{-3}$) with doubly charged ions. Characteristics of the ion source are presented and discussed in order to choose the optimal working parameters. A brief presentation of numerical model of doubly and singly charged ions in the ion source is given. The calculated results (dependences of ion current on the anode voltage) are in good agreement with the experimental data.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 843-846
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Plasma Ion Source with an Internal Evaporator
    Autorzy:
    Turek, M.
    Droździel, A.
    Pyszniak, K.
    Prucnal, S.
    Mączka, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1504137.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.77.Ka
    34.80.Dp
    61.72.uj
    Opis:
    A new construction of a hollow cathode ion source equipped with an internal evaporator heated by a spiral cathode filament and arc discharge is presented. The source is especially suitable for production of ions from solids. The proximity of arc discharge region and extraction opening enables production of intense ion beams even for very low discharge current ($I_{a}$ = 1.2 A). The currents of 50 μA $(Al^{+})$ and 70 μA $(Bi^{+})$ were obtained using the extraction voltage of 25 kV. The source is able to work for several tens of hours without maintenance breaks, giving possibility of high dose implantations. The paper presents the detailed description of the ion source as well as its experimental characteristics like dependences of extracted currents and anode voltage on anode and cathode currents.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 184-187
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Production of $Mo^{+}$ Beams Using an Arc Discharge Ion Source
    Autorzy:
    Turek, M.
    Droździel, A.
    Pyszniak, K.
    Prucnal, S.
    Mączka, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1383005.pdf
    Data publikacji:
    2014-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.77.Ka
    34.80.Dp
    61.72.uj
    Opis:
    A new method of $Mo^{+}$ ion beam production is presented in the paper. The method bases on the chemical sputtering/etching of the molybdenum parts (e.g. anode) of the arc discharge ion source by the chloride containing plasma. A mixture of $CCl_4$ (or $CHCl_3$) vapor and air was used as the feeding substance. The separated $Mo^{+}$ beam current of approximately 18 μA was achieved. The measurements of the ion current dependences on the discharge and filament currents as well as on the magnetic field flux density from the electromagnet surrounding the discharge chamber were performed in order to find the optimal working parameters of the ion source.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 6; 1388-1391
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Thermal Desorption of Krypton Implanted into Silicon
    Autorzy:
    Turek, M.
    Droździel, A.
    Wójtowicz, A.
    Filiks, J.
    Pyszniak, K.
    Mączka, D.
    Yuschkevich, Y.
    Powiązania:
    https://bibliotekanauki.pl/articles/1030211.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.43.Vx
    61.72.uf
    Opis:
    The thermal desorption spectrometry studies of krypton implanted Si samples are presented. Implantations (with the fluence 2×10¹⁶ cm¯²) were done with the energies 100, 150, and 200 keV. Additionally, a 200 keV and 100 keV Kr⁺G double implantation was performed. A sudden Kr release was observed in the ≈1100-1400 K range, most probably coming from the gas bubbles in cavities. The desorption activation energy varies from 2.5 eV (100 keV) to 0.8 (200 keV). The peak splitting suggests existence of two kinds of cavities trapping the implanted noble gas. Two Kr releases are observed for the 200 and 100 keV double-implanted samples. The peak shift of the release corresponding to 100 keV implantation could be a result of both introduced disorder and higher effective Kr concentration. The desorption activation energy is risen to ≈3.2 eV for both releases.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 249-253
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Hot Implantation on Residual Radiation Damage in Silicon Carbide
    Autorzy:
    Rawski, M.
    Żuk, J.
    Kulik, M.
    Droździel, A.
    Lin, L.
    Prucnal, S.
    Pyszniak, K.
    Turek, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1504145.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.U-
    78.30.-j
    61.05.Np
    63.50.-x
    79.20.Rf
    81.70.Fy
    Opis:
    Remarkable thermomechanical and electrical properties of silicon carbide (SiC) make this material very attractive for high-temperature, high-power, and high-frequency applications. Because of very low values of diffusion coefficient of most impurities in SiC, ion implantation is the best method to selectively introduce dopants over well-defined depths in SiC. Aluminium is commonly used for creating p-type regions in SiC. However, post-implantation radiation damage, which strongly deteriorates required electric properties of the implanted layers, is difficult to anneal even at high temperatures because of remaining residual damage. Therefore implantation at elevated target temperatures (hot implantation) is nowadays an accepted method to decrease the level of the residual radiation damage by avoiding ion beam-induced amorphization. The main objective of this study is to compare the results of the Rutherford backscattering spectroscopy with channeling and micro-Raman spectroscopy investigations of room temperature and 500°C $Al^{+}$ ion implantation-induced damage in 6H-SiC and its removal by high temperature (up to 1600°C) thermal annealing.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 192-195
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Working parameters of the electron - beam-generated ion source for ISOL facilities
    Autorzy:
    Yushkevich, Y. V.
    Turek, M.
    Mączka, D.
    Pyszniak, K.
    Słowiński, B.
    Vaganov, Y. A.
    Zubrzycki, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/146648.pdf
    Data publikacji:
    2012
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    on-line isotope separation
    short-lived nuclides
    nuclear spectroscopy
    ion sources
    Opis:
    An electron-beam generated plasma (EBGP) ion source for nuclear spectroscopy purposes at YASNAPP (YAdernaya Spektroskopya NA Putchkah Protonov - nuclear spectroscopy using proton beams) isotope separation on-line facility is presented. Working conditions both in on- and off-line mode are presented and discussed. Formation of a potential trap inside a discharge chamber is an advantage of the presented construction, enabling relatively high ionization efficiencies (2-5%) even for hard-to-ionize elements like Be, Ti, V, Zr, Nb, Mo, Tc, Ru, Rd, Hf, Ta, W, Re, Os, Ir, Pt. The paper presents estimation of critical values of working parameters that enable formation of the ion trap leading in consequence to high efficiency of ionization. The optimal temperature of the discharge chamber and cathode walls is found to be in the range 2600-2800 K. Calculations of the output rates of ions produced in the on-line mode are also presented as well as the constraints on the half-life time of obtained nuclides imposed by construction details like the target material and its thickness.
    Źródło:
    Nukleonika; 2012, 57, 3; 351-356
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Production of Molybdenum and Tantalum Ion Beams using CCl₂F₂
    Autorzy:
    Turek, M.
    Droździel, A.
    Pyszniak, K.
    Filiks, J.
    Prucnal, S.
    Mączka, D.
    Vaganov, Yu.
    Węgierek, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1033135.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.77.Ka
    34.80.Dp
    61.72.uj
    Opis:
    A new method of refractory metal (like Mo and Ta) ion beam production using the arc discharge ion source and CCl₂F₂ (dichlorodifluoromethane) used as a feeding gas supported into the discharge chamber is presented. It is based on etching of the refractory metal parts (e.g. anode or a dedicated tube) Cl and F containing plasma. The results of measurements of the dependences of ion currents on the working parameters like discharge and filament currents as well as on the magnetic field flux density of an external electromagnet coil are shown and discussed. The separated Mo⁺ and Ta⁺ beam currents of approximately 22 μA and 2 μA, respectively, were obtained.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 283-287
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    III-V Quantum Dots in Dielectrics Made by Ion Implantation and Flash Lamp Annealing
    Autorzy:
    Prucnal, S.
    Turek, M.
    Gao, K.
    Zhou, S.
    Pyszniak, K.
    Droździel, A.
    Żuk, J.
    Skorupa, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400484.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Fs
    78.67.Hc
    81.05.Ea
    81.07.Ta
    81.15.Lm
    Opis:
    Different semiconductor nanocrystals synthesized in dielectrics on silicon are very interesting for applications in non-volatile memories and photovoltaics. In this paper we present an overview of microstructural and opto-electronic properties of different III-V quantum dots embedded in $SiO_2$ and $Si_3N_4$ made by sequential ion implantation and millisecond range flash lamp annealing. It is shown that within 20 ms post-implantation annealing high quality crystalline III-V quantum dots can be formed in different matrices. Formation of crystalline III-V quantum dots was confirmed by cross-section transmission electron microscopy, photoluminescence and μ-Raman spectroscopy. Flash lamp annealing is essentially a single-flash-single-wafer technique whose main attributes are the ease and control of processing over large wafer batches.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 935-938
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Thermal Desorption of Helium from Defected Silicon
    Autorzy:
    Turek, M.
    Droździel, A.
    Pyszniak, K.
    Wójtowicz, A.
    Mączka, D.
    Yuschkevich, Y.
    Vaganov, Y.
    Żuk, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402210.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.43.Vx
    61.72.uf
    Opis:
    The thermal desorption spectroscopy measurements of He implanted silicon samples are reported. The He implantation energy was 90 keV (at 45° tilt) while the fluence was 10¹⁶ cm¯². Additionally, the influence of Si pre-implantation (fluences in the range 10¹⁴-10¹⁶ cm¯², E=260 keV) was under investigation. The He releases from both interstitials/vacancies (β peak) and cavities (α peak or rather band consisting probably of at least two peaks) were observed. The α peak disappears for the pre-implantation fluences larger than 10¹⁵ cm¯², while β peak becomes broader and shifts toward higher temperatures. The thermal desorption spectra were collected using heating ramp rates in the range 0.3-0.7 K/s. Desorption activation energy of the β peak for different pre-implantation fluences was found using the Redhead analysis of the β peak shift. It varies from 0.97 eV for the sample that was not pre-implanted up to 1.3 eV for the sample pre-implanted with the fluence 10¹⁶ cm¯².
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 849-852
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Thermal Desorption Studies of $Ar^{+}$ Implanted Silicon
    Autorzy:
    Drozdziel, A.
    Wojtowicz, A.
    Turek, M.
    Pyszniak, K.
    Maczka, D.
    Slowinski, B.
    Yushkevich, Y.
    Zuk, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1382778.pdf
    Data publikacji:
    2014-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.43.Vx
    61.72.uf
    Opis:
    Thermal desorption spectrometry measurements were performed for Ar implanted Si samples. Implantation energy $E_{i}$ varied in the range 85-175 keV. The release of implanted Ar in two steps was observed in the temperature range 930-1300 K: the relatively narrow peak at lower temperature ( ≈ 930 K for implantation fluence 5 × $10^{16}$ $cm^{-2}$) is due to the release of Ar from the agglomerations (bubbles) while the broader peak observed for higher temperatures ( ≈ 950 K for implantation fluence 5 × $10^{16}$ $cm^{-2}$) comes from Ar atoms diffusing out of the sample. Inverse order of peaks is observed compared to the results for lower energy implantations (< 50 keV). Analyzing the thermal desorption spectra collected for different heating ramp rates enabled estimation of the desorption activation energy (2 eV for $E_{i}$ = 85 keV and 1.7 eV for $E_{i}$ = 115 keV).
    Źródło:
    Acta Physica Polonica A; 2014, 125, 6; 1400-1403
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modification of Optical and Electrical Properties of PET Foils by He⁺, Ne⁺ and Ar⁺ Implantation
    Autorzy:
    Droździel, A.
    Turek, M.
    Pyszniak, K.
    Prucnal, S.
    Luchowski, R.
    Grudziński, W.
    Klimek-Turek, A.
    Partyka, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1033733.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.40.Me
    78.30.Jw
    61.82.Pv
    Opis:
    Thin (3 μm) polyethylene terephthalate (PET) foils were irradiated with 135 keV He⁺, Ne⁺ and Ar⁺ ions with the fluences up to 5×10¹⁵ cm¯². Changes of chemical structure of the polymer were studied with the Fourier transform infrared and Raman spectroscopy - breaking of numerous chemical bonds, polymer chain cross-linking as well as formation of sp² hybridised carbon clusters and cluster networks were demonstrated. The increase of the implanted sample absorbance with the implantation fluence in the UV-VIS spectra as well as the decrease of optical band-gap energy (2.75 and 2.0 eV for He and Ne, respectively, at 5×10¹⁵ cm¯²) are observed. Decrease of bulk resistance of heavily treated samples by ≈5 orders of magnitude is determined. Measurements of the sheet resistance confirm that the sample becomes conducting also on the reverse (unimplanted) side of the foil. Both of these effects depend on the impinging ion mass - they are the strongest for Ar. The increase of both ac conductance and dielectric constant is observed in the frequency range up to 2 MHz and these changes rise with the impinging ion mass.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 264-269
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Flash Lamp Annealing on the Optical Properties of CIGS Layer
    Autorzy:
    Prucnal, S.
    Jiao, F.
    Reichel, D.
    Zhao, K.
    Cornelius, S.
    Turek, M.
    Pyszniak, K.
    Drozdziel, A.
    Skorupa, W.
    Helm, M.
    Zhou, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1199248.pdf
    Data publikacji:
    2014-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    88.40.jn
    61.72.Cc
    78.55.Hx
    Opis:
    Copper indium gallium diselenide (CIGS) becomes more significant for solar cell applications as an alternative to silicon. The quality of the layer has a critical impact on the final efficiency of the solar cell. An influence of the post-deposition millisecond range flash lamp annealing on the optical and microstructural properties of the CIGS films was investigated. Based on the Raman and photoluminescence spectroscopy, it is shown that flash lamp annealing reduces the defect concentration and leads to an increase of the photoluminescence intensity by a factor of six compared to the nonannealed sample. Moreover, after flash lamp annealing the degradation of the photoluminescence is significantly suppressed and the absolute absorption in the wavelength range of 200-1200 nm increases by 25%.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 6; 1404-1407
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-13 z 13

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