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    Wyświetlanie 1-12 z 12
    Tytuł:
    First-Principles Calculation of He-H Interaction in c-Si
    Autorzy:
    Gnidenko, A. A.
    Zavodinsky, V. G.
    Misiuk, A.
    Bak-Misiuk, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/2044684.pdf
    Data publikacji:
    2006-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.15.Mb
    71.55.Cn
    Opis:
    We used the density functional theory and ab initio pseudopotentials to investigate He-H interaction in crystalline silicon. It was shown that both hydrogen and helium stimulate the formation of vacancy complexes. The presence of hydrogen decreases the vacancy and divacancy formation energies by about 2 eV. The presence of one or two helium atoms reduces the divacancy formation energy by 0.3 and 0.4 eV, respectively. The influence of helium presence on hydrogen diffusion from silicon vacancies under high pressure depends on a helium concentration. Thus, according to our calculation, low concentrations of He increase the hydrogen out-diffusion.
    Źródło:
    Acta Physica Polonica A; 2006, 109, 3; 353-357
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Composition and Structure of Czochralski Silicon Implanted with $H_{2}^{+}$ and Annealed under Enhanced Hydrostatic Pressure
    Autorzy:
    Kulik, M.
    Kobzev, A.
    Misiuk, A.
    Wierzchowski, W.
    Wieteska, K.
    Bak-Misiuk, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1538976.pdf
    Data publikacji:
    2010-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.U-
    61.72.uf
    66.10.C-
    61.80.Jh
    81.20.-n
    82.80.Yc
    85.40.-e
    Opis:
    Depth distribution of implanted species and microstructure of oxygen-containing Czochralski grown silicon (Cz-Si) implanted with light ions (such as $H^{+}$) are strongly influenced by hydrostatic pressure applied during the post-implantation treatment. Composition and structure of Si:H prepared by implantation of Cz-Si with $H_{2}^{+}$; fluence D = 1.7 × $10^{17} cm^{-2}$, energy E = 50 keV (projected range of $H_{2}^{+}$, $R_{p}(H)$ = 275 nm), processed at up to 923 K under Ar pressure up to 1.2 GPa for up to 10 h, were investigated by elastic recoil detection Rutherford backscattering methods and the depths distributions of implanted hydrogen and also carbon, oxygen and silicon in the near surface were determined for all samples. The defect structure of Si:H was also investigated by synchrotron diffraction topography at HASYLAB (Germany). High sensitivity to strain associated with small inclusions and dislocation loops was provided by monochromatic (λ = 0.1115 nm) beam topography. High resolution X-ray diffraction was also used.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 2; 332-335
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Hydrostatic Pressure Effect on Oxygen Precipitates in Silicon Single Crystal
    Autorzy:
    Misiuk, A.
    Adamczewska, J.
    Bąk-Misiuk, J.
    Härtwig, J.
    Morawski, A.
    Witczak, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1890764.pdf
    Data publikacji:
    1991-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.70.At
    61.70.-r
    81.40.-z
    Opis:
    The effect of hydrostatic pressure on some properties of Cz-Si with oxygen precipitates is investigated. The observed phenomena are discussed in terms of misfit between the precipitates and Si matrix.
    Źródło:
    Acta Physica Polonica A; 1991, 80, 3; 317-320
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Pressure Variation of the Strain State of MnAs Nanoclusters Embedded in GaAs
    Autorzy:
    Bak-Misiuk, J.
    Dynowska, E.
    Romanowski, P.
    Misiuk, A.
    Sadowski, J.
    Caliebe, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1431599.pdf
    Data publikacji:
    2012-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cp
    75.50.Pp
    81.40.Vw
    Opis:
    Granular GaAs:(Mn,Ga)As films were prepared by annealing at 500°C under ambient and enhanced hydrostatic pressure (1.1 GPa), of $Ga_{1-x}Mn_xAs//GaAs$ layers (x = 0.025, 0.03, 0.04, 0.05 and 0.063) grown at 230°C by molecular beam epitaxy method. Distinct influence of enhanced hydrostatic pressure applied during sample annealing on strain state of inclusions was found. An increase of lattice distortion and of strain of inclusions for the samples treated under hydrostatic pressure is related to different bulk moduli of GaAs and of MnAs
    Źródło:
    Acta Physica Polonica A; 2012, 121, 4; 903-905
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Changes of GaP: N Defect Structure under Hydrostatic Pressure
    Autorzy:
    Bąk-Misiuk, J.
    Domagała, J.
    Kozankiewicz, B.
    Misiuk, A.
    Adamczewska, J.
    Skibska, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1924323.pdf
    Data publikacji:
    1993-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    65.70.+y
    Opis:
    The changes of defect structure of GaP:N epitaxial layers subjected to hydrostatic pressures up to 1.8 GPa are investigated by X-ray diffraction and photoluminescence. The observed changes are more pronounced at higher pressures and depend on the nitrogen concentration, c$\text{}_{N}$, and on initial defect structure. Especially complex hydrostatic pressure induced properties are observed for the sample with c$\text{}_{N}$ > 10$\text{}^{20}$ at. cm$\text{}^{-3}$. The model explaining the hydrostatic pressure induced defect structure changes is proposed.
    Źródło:
    Acta Physica Polonica A; 1993, 83, 1; 87-93
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Defect Structure of Nitrogen Doped Czochralski Silicon Annealed under Enhanced Pressure
    Autorzy:
    Misiuk, A.
    Wierzchowski, W.
    Wieteska, K.
    Londos, C.
    Andrianakis, A.
    Bak-Misiuk, J.
    Yang, D.
    Surma, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1539028.pdf
    Data publikacji:
    2010-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cp
    61.72.-y
    61.72.Ff
    61.72.uf
    62.50.-p
    Opis:
    Defect structure of Czochralski grown silicon (Cz-Si) with nitrogen admixture, c_{N} ≤ 5 × $10^{14} cm^{-3}$ (Cz-Si:N), annealed for up to 10 h at 1270-1400 K under hydrostatic Ar pressure ≤ 1.1 GPa, was investigated by synchrotron diffraction topography (HASYLAB, Germany), X-ray reciprocal space mapping, and infrared spectroscopy. Extended defects were not detected in Cz-Si:N processed at up to 1270 K. Such defects were created, however, in Cz-Si:N pre-annealed at 923 K and next processed at 1270 K or in as-grown Cz-Si:N processed at 1400 K. Investigation of temperature-pressure effects in nitrogen-doped silicon contributes to the understanding of defect formation in Cz-Si:N.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 2; 344-347
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Properties of Si:V Annealed under Enhanced Hydrostatic Pressure
    Autorzy:
    Misiuk, A.
    Wierzchowski, W.
    Wieteska, K.
    Barcz, A.
    Bak-Misiuk, J.
    Chow, L.
    Vanfleet, R.
    Prujszczyk, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1504150.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Dd
    61.72.uf
    64.75.Qr
    66.30.Xj
    81.40.Xj
    Opis:
    It is known that processing of silicon implanted with vanadium, Si:V, at high temperature-pressure, HT-HP, can lead to magnetic ordering within the V-enriched area. New data concerning structure of Si:V (prepared using $V^{+}$ doses, D = (1-5) × $10^{15} cm^{-2}$, and energy, E = 200 keV), as implanted and processed for up to 10 h at HT ≤ 1400 K under enhanced hydrostatic pressure, HP ≤ 1.1 GPa, are presented. In effect of implantation, amorphous (a-Si) area is produced near range of implanted species. Transmission electron microscopy, secondary ion mass spectrometry, X-ray, and synchrotron methods were used for sample characterisation. At HT-HP the a-Si layer is subjected to solid phase epitaxial re-growth. Depending on HP, distinct solid phase epitaxial re-growth and formation of $VSi_2$ are observed at HT ≥ 720 K. HP applied at processing results in the improved solid phase epitaxial re-growth in Si:V. This can be related, among others, to the effect of HP on diffusivity of $V^{+}$ and of implantation-induced point defects. Our results can be useful for development of the new family of diluted magnetic semiconductors.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 196-199
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Oxygen Precipitation in Si:O Annealed under High Hydrostatic Pressure
    Autorzy:
    Misiuk, A.
    Bąk-Misiuk, J.
    Bryja, L.
    Kątcki, J.
    Ratajczak, J.
    Jun, J.
    Surma, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/2030659.pdf
    Data publikacji:
    2002-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.10.-i
    61.72.Yx
    81.40.Vw
    Opis:
    Effect of hydrostatic pressure up to 1.2 GPa on oxygen-implanted silicon, Si:O (O$\text{}^{+}$ dose, D, within the 6×10$\text{}^{17}$-2×10$\text{}^{18}$ cm$\text{}^{-2}$ range), treated at 1230-1570 K, was investigated by X-ray, transmission electron microscopy and photoluminescence methods. The pressure treatment affects oxygen precipitation and defect creation, especially in low oxygen dose implanted Si:O (D=6×10$\text{}^{17}$ cm$\text{}^{-2}$). Such investigation helps in understanding the stress related phenomena in Si wafers with buried insulating layer.
    Źródło:
    Acta Physica Polonica A; 2002, 101, 5; 719-727
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Transformation of AlGaAs/GaAs Interface under Hydrostatic Pressure
    Autorzy:
    Bąk-Misiuk, J.
    Domagała, J.
    Trela, J.
    Leszczyński, M.
    Misiuk, A.
    Härtwig, J.
    Prieur, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1945264.pdf
    Data publikacji:
    1996-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.40.-z
    65.70.+y
    Opis:
    AlGaAs layers grown by molecular beam epitaxy on GaAs substrates were investigated before and after high hydrostatic pressure (1.2 GPa) at high temperature (770 K) treatment (HP-HT treatment). An influence of HP-HT treatment on the properties of the AlGaAs/GaAs system was studied by lattice parameter measurements using the high resolution diffractometer and by X-ray topography. Observed changes in the lattice parameter of the AlGaAs layers after HP-HT treatment are related to the strain relaxation and explained by the creation of misfit dislocations and other extended defects which are visible on the topographs.
    Źródło:
    Acta Physica Polonica A; 1996, 89, 3; 405-409
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Defect Structure of Pressure Treated Czochralski Grown Silicon Investigated by X-Ray Topography and Diffractometry
    Autorzy:
    Misiuk, A.
    Härtwig, J.
    Prieur, E.
    Ohler, M.
    Bąk-Misiuk, J.
    Domagała, J.
    Surma, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1964154.pdf
    Data publikacji:
    1997-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Yx
    81.40.Vw
    61.10.-i
    Opis:
    The defect structure of Czochralski grown silicon single crystals annealed at 870-1400 K under hydrostatic pressure up to 1 GPa was investigated by conventional and synchrotron radiation X-ray topography and by reciprocal space mapping. Hydrostatic pressure promotes oxygen precipitation from oversaturated Si-O solid solution and the creation of structural defects.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 5; 987-991
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    X-ray Study of Strain Relaxation in Heteroepitaxial AlGaAs Layers Annealed under High Hydrostatic Pressure
    Autorzy:
    Bąk-Misiuk, J.
    Adamczewska, J.
    Misiuk, A.
    Regiński, K.
    Wierzchowski, W.
    Wieteska, K.
    Kozanecki, A.
    Kuritsyn, D.
    Glukhanyuk, W.
    Trela, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/2030644.pdf
    Data publikacji:
    2002-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.40.-z
    68.55.Ln
    Opis:
    The effect of treatment at up to 1270 K under hydrostatic argon pressure, up to 1.2 GPa, on strain relaxation of AlGaAs layers was investigated by X-ray diffraction and related methods. The 1.5μm thick AlGaAs layers were grown by molecular beam epitaxy method on 001 oriented semi-insulating GaAs substrate at 950 K. An increase in intensity of X-ray diffuse scattering, originating from hydrostatic pressure-induced misfit dislocations, was observed for all treated samples. For the samples treated at 920 K during 1 h under 0.6 GPa, the diffuse scattering was confined to the [110] crystallographic direction perpendicular to the direction of dislocations. For the samples treated at 1.2 GPa at the same temperature and time conditions as for 0.6G Pa, a different behaviour is observed, namely the diffuse scattering extends along all azimuthal directions, indicating that dislocations are created in both [110] and [¯110] directions. The change of strain after the treatment was most pronounced for the samples treated at 1.2 GPa for 1 h at 920 K.
    Źródło:
    Acta Physica Polonica A; 2002, 101, 5; 689-699
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γ Irradiation and High Temperature-High Pressure Treatment
    Autorzy:
    Wieteska, K.
    Misiuk, A.
    Prujszczyk, M.
    Wierzchowski, W.
    Surma, B.
    Bąk-Misiuk, J.
    Romanowski, P.
    Shalimov, A.
    Capan, I.
    Yang, D.
    Graeff, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812256.pdf
    Data publikacji:
    2008-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.c-
    61.72.-y
    61.82.-d
    Opis:
    Effect of processing under high hydrostatic pressure (= 1.1 GPa), applied at 1270 K, on Czochralski grown silicon with interstitial oxygen content $(c_O)$ up to $1.1×10^{18} cm^{-3}$, admixed with N or Ge (Si-N, c_N ≤ $1.2×10^{15} cm^{-3}$, or Si-Ge, $c_{Ge} ≈ 7×10^{17} cm^{-3}$, respectively), pre-annealed at up to 1400 K and next irradiated withγ-rays (dose, D up to 2530 Mrad, at energy E = 1.2 MeV), was investigated by high resolution X-ray diffraction, Fourier transform infrared spectroscopy, and synchrotron topography. Processing of γ-irradiated Si-N and Si-Ge under high pressure leads to stimulated precipitation of oxygen at the nucleation sites created by irradiation. It means that radiation history of Si-N and Si-Ge can be revealed by appropriate high temperature-high pressure processing.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 2; 439-446
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-12 z 12

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