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    Wyświetlanie 1-14 z 14
    Tytuł:
    Effect of Thermal Treatment on the Structure and Mechanical Properties of Coatings Based on (Ti, Hf, Nb, Si)N
    Autorzy:
    Pogrebnjak, A.
    Komarov, F.
    Sobol, O.
    Kaverina, A.
    Shypylenko, A.
    Karwat, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1198976.pdf
    Data publikacji:
    2014-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.46.-w
    62.20.Qp
    62.25.-g
    Opis:
    Current paper presents the results of investigating of nanostructured cathode arc vacuum evaporation coatings, based on (Ti, Hf, Nb, Si)N. Several methods of the structural and elemental analysis were used: proton microbeam, nano- and micro-electron beam, X-ray diffraction analysis. To determine tribological properties (scratch resistance, adhesive and cohesive strength) of the coatings, scratch testing were conducting. Influence of thermal annealing at temperatures 300, 500, 800, 1000C on elemental composition, microstructure, residual stress, phase composition, profiles of atomic distribution in the coatings were investigated.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 6; 1312-1315
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Surface structure changes of InP and GaAs single crystals irradiated with high energy electrons and swift heavy ions
    Autorzy:
    Didyk, A.
    Komarov, F.
    Vlasukova, L.
    Yuvchenko, V.
    Hofman, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/147490.pdf
    Data publikacji:
    2006
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    InP crystals
    GaAs crystals
    preliminary disorder
    swift ion irradiation
    surface topography
    macrodefect
    Opis:
    InP and GaAs crystal structure changes under the influence of swift Kr and Bi ions have been studied by means of scanning electron microscopy, atomic force microscopy and selective chemical etching. The previous disordering of samples by electron irradiation has shown to lead to macrodefect formation in the form of cracks and breaks, at the depths near the ion end-of-range, and on the crystal surface. A possible explanation of the observed effects is proposed.
    Źródło:
    Nukleonika; 2006, 51, 2; 105-109
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Peculiarities of Swift Proton Transmission through Tapered Glass Capillaries
    Autorzy:
    Komarov, F.
    Kamyshan, A.
    Pil'ko, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503781.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    34.35.+a
    Opis:
    A study of the 150-300 keV proton beam transmission through glass (borosilicate) tapered capillaries with different diameters of the input and output of the capillary was performed. The focusing effect was observed. The areal density of the transmitted beam is enhanced by approximately 20 times. It was shown that changing a taper angle from 0.5 deg to 1.7 deg evidences the increase of the transmission coefficient more than by 300 times keeping the initial energy spectrum of ions.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 16-18
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Radiation Degradation of Bipolar Transistor Current Gain
    Autorzy:
    Miskiewicz, S.
    Komarov, A.
    Komarov, F.
    Zayats, G.
    Soroka, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1033766.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    radiation
    numerical simulation
    bipolar transistors
    lifetime
    minority charge carriers
    recombination
    current gain
    Opis:
    Spatial distribution of nonequilibrium minority charge carriers in bipolar transistors before and during the radiation exposure is described. Radiation-induced changes in the input and output characteristics and the current gain under the ⁶⁰Co 1.2 MeV γ -rays were calculated. It was shown that the collector current and current gain steadily fall due to irradiation in the considered range in the dose range 0-7×10⁵ rad. The simulation results correlate well with the experimental data obtained at the Research and Production Corporation "Integral".
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 288-290
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modeling of Thermal Processing at the Formation of Shallow Doped IC Active Regions
    Autorzy:
    Komarov, A.
    Velichko, O.
    Zayats, G.
    Komarov, F.
    Miskiewicz, S.
    Mironov, A.
    Makarevich, Yu.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400426.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    66.30.J-
    07.05.Tp
    07.05.Bx
    Opis:
    Physical and mathematical models as well as numerical algorithms for simulation of advanced technological processes, such as thermal annealing after low-energy ion implantation used during the VLSI fabrication are presented. In this paper we propose a model that treats the migration of the impurity atoms at the thermal annealing. We take into account process nonlinearity and influence of non-uniform defects distribution as well as electric field and elastic stress on the migration of atoms. The redistribution of point defects as well as the diffusion of nonequilibrium impurity interstitials in silicon are described by time-dependent quasi-linear parabolic equations. The results of numerical calculations are presented as well.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 804-808
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Formation of Perspective Composite Coatings by Ion-Beam Assisted Deposition
    Autorzy:
    Komarov, F.
    Pilko, V.
    Pogrebnjak, A.
    Karvat, C.
    Kiszczak, K.
    Kozak, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400425.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Nq
    Opis:
    TiAlN, TiSiN, and TiCrN composite layers were deposited by magnetron sputtering and sliding - angle ion beam sputtering of the inner surface of hollow truncated cones of different compositions. The composition of both type coatings and component depth distributions were studied by the Rutherford backscattering spectrometry. The structural and phase analyses of the deposited films were performed by transmission electron microscopy and diffraction. Microhardness, wear resistance and friction coefficient of the coatings were also measured and discussed in the relationship with the structure and composition. Microhardness tests showed that the registered data varied in the range 10 to 50 GPa, depending on composition and concentration of components. The best wear protection results from the magnetron deposited Ti-Al-N systems in a narrow range of component concentrations. A minimal friction coefficient was revealed for the magnetron sputtered layers.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 800-803
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Simulation of Radiation Effects in SiO₂/Si Structures
    Autorzy:
    Komarov, F.
    Zayats, G.
    Komarov, A.
    Miskiewicz, S.
    Michailov, V.
    Komsta, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402212.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    02.30.Hq
    02.60.Cb
    Opis:
    The space-time evolution of electric charge induced in the dielectric layer of simulated metal-insulator-semiconductor structures due to irradiation with X-rays is discussed. The system of equations used as a basis for the simulation model is solved iteratively by the efficient numerical method. The obtained simulation results correlate well with the respective data presented in other scientific publications.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 857-860
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Formation and Characterization of Nanostructured Composite Coatings Based on the TiN Phase
    Autorzy:
    Komarov, F.
    Konstantinov, S.
    Pogrebnjak, A.
    Pilko, V.
    Kozak, C.
    Opielak, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1198880.pdf
    Data publikacji:
    2014-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Nq
    Opis:
    Nanostructured thin-film coatings based on titanium nitride, doped with silicon, chromium and aluminium were the object of this study. The creation of a smooth transition layer was carried out by the changing of a supplying nitrogen flow to the vacuum chamber during the application. TiSiN, TiCrN and TiAlN coatings were deposited. The studies of the structure, elemental and phase composition of the coatings were carried out. Also, the performance of coatings was investigated. The results can be used in today's technology, such as mechanical engineering.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 6; 1292-1295
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Multilayered Nano-Microcomposite Ti-Al-N/TiN/$Al_2O_3$ Coatings. Their Structure and Properties
    Autorzy:
    Pogrebnjak, A.
    Shpak, A.
    Kirik, G.
    Erdybaeva, N.
    Il'yashenko, M.
    Dem'yanenko, A.
    Kunitskii, Yu.
    Kaverina, A.
    Baidak, V.
    Makhmudov, N.
    Zukowski, P.
    Komarov, F.
    Beresnev, V.
    Ruzimov, Sh.
    Shypylenko, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503960.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.46.-w
    62.20.Qp
    62.25.-q
    Opis:
    This paper presents the first results on formation and study of structure and properties of micro- and nanocomposite combined coatings. By means of modeling the deposition processes (deposition conditions, current density-discharge, plasma composition and density, voltage) we formed the three-layer nanocomposite coatings of Ti-Al-N/Ti-N/$Al_2O_3$. The coating composition, structure and properties were studied using physical and nuclear-physical methods. The Rutherford proton and helium ion backscattering, scanning electron microscopy with microanalysis, grazing incidence X-ray diffraction, as well as nanohardness tests (hardness) were used. Measurements of wear resistance and corrosion resistance in NaCl, HCl and $H_2SO_4$ solutions were also performed. For testing mechanical properties such characteristics of layered structures as hardness H, elastic modulus E: $H^3//E^2$ etc. were measured. It is demonstrated that the formed three-layer nanocomposite coatings have hardness of 32 to 36 GPa and elastic modulus of 328 ± 18 to 364 ± 14 GPa. Its wear resistance (cylinder-surface friction) increased by factor of 17 to 25 in comparison with the substrate (stainless steel). The layers thickness was in the range of 56-120 μm.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 94-99
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structure and Properties of Nano- and Microcomposite Coating Based on Ti-Si-N/WC-Co-Cr
    Autorzy:
    Pogrebnjak, A.
    Shpak, A.
    Beresnev, V.
    Il'yashenko, M.
    Komarov, F.
    Shypylenko, A.
    Kaverin, M.
    Zukovski, P.
    Kunitskyi, Y.
    Kolesnikov, D.
    Kolisnichenko, O.
    Makhmudov, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503969.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.46.-w
    62.20.Qp
    62.25.-g
    Opis:
    Using the two technologies: plasma-detonation and vacuum-arc deposition, we fabricated two types of coatings: Ti-Si-N/WC-Co-Cr/steel and Ti-Si-N/steel. We found that the top coating of Ti-Si-N was nanostructured one with 12 to 15 nm grain sizes and H = 40 to 38 GPa hardness. A thick coating which was deposited using the pulsed plasma jet, demonstrated 11 to 15.3 GPa hardness, an elastic modulus (E) changing within 176 to 240 GPa, and tungsten carbide grain dimensions varying from 150 to 350 nm to several microns. An X-ray diffraction analysis shows that the coating has the following phase composition: TiN, (Ti,Si)N solid solution, WC, $W_2C$ tungsten carbides. An element analysis was performed using energy dispersive spectroscopy (microanalysis) and scanning electron microscopy, as well as the Rutherford backscattering of $\text{}^4He^{+}$ ion and the Auger electron spectroscopy. Surface morphology and structure were analyzed using scanning electron microscopy and scanning tunnel microscopy. Tests friction and resistance (cylinder-plane) demonstrated essential resistance to abrasive wear and corrosion in the solution. The decrease of grain dimensions ≤ 10 nm occurring in the top Ti-Si-N coating layer increased the sample hardness to 42 ± 2.7 GPa under $Ti_{72}-Si_8-N_{20}$ at.% concentration.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 100-104
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Nanocrystal- and Dislocation-Related Luminescence in~Si Matrix with InAs Nanocrystals
    Autorzy:
    Komarov, F.
    Vlasukova, L.
    Milchanin, O.
    Mudryi, A.
    Zuk, J.
    Pyszniak, K.
    Kulik, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1504152.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.-w
    78.60.Fi
    Opis:
    We have studied the influence of ion implantation and post-implantation annealing regimes on the structural and optical properties of silicon matrix with ion-beam synthesized InAs nanocrystals. (100) Si wafers were implanted at 25 and 500°C, subsequently with high fluences of As and In ions. After implantation the samples were processed by furnace and rapid thermal annealing at 900, 950 and 1050°C. A part of the samples implanted at 25°C was additionally exposed to $H_2^{+}$ ions (100 keV, 1.2 × $10^{16} cm^{-2}$ in terms of atomic hydrogen). This procedure was performed to obtain an internal getter. In order to characterize the implanted samples transmission electron microscopy and low-temperature photoluminescence techniques were employed. It was demonstrated that by introducing getter, varying the ion implantation temperature, ion fluences and post-implantation annealing duration, and temperature it is possible to form InAs nanocrystals in the range of sizes of 2-80 nm and create various concentration and distribution of different types of secondary defects. The last ones cause in turn the appearance in photoluminescence spectra dislocation-related D1, D2 and D4 lines at 0.807, 0.870 and 0.997 eV, respectively.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 204-207
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structure and Optical Properties of Silicon Layers with GaSb Nanocrystals Created by Ion-Beam Synthesis
    Autorzy:
    Komarov, F.
    Vlasukova, L.
    Milchanin, O.
    Mudryi, A.
    Dunetz, B.
    Wesch, W.
    Wendler, E.
    Karwat, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503945.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.-x
    61.72.Ff
    63.20.-e
    78.66.-w
    Opis:
    We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence "hot" implantation of Sb and Ga ions followed by thermal annealing. The Rutherford backscattering, transmission electron microscopy/transmission electron diffraction, Raman spectroscopy and photoluminescence were used to characterize the implanted layers. It was found that the nanocrystal size increases from 5 to 60 nm in the samples annealed at 900°C up to 20-90 nm in those annealed at 1100°C. For the samples annealed at 900°C a broad band in the region of 0.75-1.05 eV is registered in the photoluminescence spectra. The nature of this photoluminescence band is discussed.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 87-90
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Light Emitting Single-Crystalline Silicon Wafers Implanted with V and III Group Ions
    Autorzy:
    Komarov, F.
    Vlasukova, L.
    Milchanin, O.
    Greben, M.
    Parkhomenko, I.
    Mudryi, A.
    Wendler, E.
    Zukowski, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1198877.pdf
    Data publikacji:
    2014-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.-x
    61.72.Ff
    63.20.-e
    78.66.-w
    Opis:
    Compound semiconductor nanocrystals (InAs, InSb, GaSb) were successfully synthesized in single crystalline Si by high fluence ion implantation at 500C followed by high-temperature rapid thermal annealing or conventional furnace annealing at 900-1100°C. Rutherford backscattering spectrometry, transmission electron microscopy/transmission electron diffraction, Raman scattering, and photoluminescence were employed to characterize the implanted layers. Two different types of the broad band emission extending over 0.75-1.1 eV were observed in photoluminescence spectra of annealed samples. One of the bands disappears in photoluminescence spectra of samples annealed at 1100C unlike the other one.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 6; 1288-1291
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ion Beam Synthesis of InAs Nanocrystals in Si: Influence of Thin Surface Oxide Layers
    Autorzy:
    Komarov, F.
    Vlasukova, L.
    Milchanin, O.
    Greben, M.
    Komarov, A.
    Mudryi, A.
    Wesch, W.
    Wendler, E.
    Zuk, J.
    Kulik, M.
    Ismailova, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400427.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.-x
    61.72.Ff
    63.20.-e
    78.66.-w
    Opis:
    Nanosized crystallites have been synthesized in the Si and $SiO_2//Si$ structures by means of As (170 keV, $3.2 × 10^{16} cm^{-2}$) and In (250 keV, $2.8 × 10^{16} cm^{-2}$) implantation at 25C and 500C and subsequent annealing at 1050C for 3 min. The Rutherford backscattering, transmission electron microscopy, and photoluminescence techniques were used to analyse the impurity distribution as well as the structural and optical characteristics of the implanted layers. It was found that oxidation of samples before thermal treatment significantly reduced the As and In losses. A broad band in the region of 1.2-1.5 μm was detected in the photoluminescence spectra. The highest photoluminescence yield for the samples after "hot" implantation and annealing was obtained. Anodic oxidation of the implanted samples before annealing results in the additional increase of photoluminescence yield.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 809-812
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-14 z 14

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