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Wyświetlanie 1-15 z 28
Tytuł:
MBE Growth and Characterization of Cubic MnTe(111) on BaF$\text{}_{2}$ Substrates
Autorzy:
Janik, E.
Wojtowicz, T.
Dynowska, E.
Bąk-Misiuk, J.
Domagała, J.
Karczewski, G.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1934056.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
68.55.Bd
68.55.Jk
Opis:
We report on growth by molecular beam epitaxy of cubic MnTe(111) layers on BaF$\text{}_{2}$ (111) substrates. Layers as thick as 0.2-1.0 μm were grown. Basic characterization by X-ray diffraction shows that the cubic crystal structure is deformed to orthorhombic symmetry.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 982-984
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Characterization of MBE-Grown Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te Layers by Raman Spectroscopy
Autorzy:
Szuszkiewicz, W.
Dynowska, E.
Janik, E.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Jouanne, M.
Powiązania:
https://bibliotekanauki.pl/articles/1945228.pdf
Data publikacji:
1996-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
63.20.-e
75.50.Pp
78.30.-j
Opis:
In this paper we discuss a possibility of an optical characterization of thin semiconductor epilayers by Raman scattering measurements. As an example zinc blende Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te epilayers (0.66 ≤ x ≤ 1.0) have been grown by molecular beam epitaxy method and investigated by Raman scattering and X-ray diffraction. Information resulting from both methods is compared and discussed.
Źródło:
Acta Physica Polonica A; 1996, 89, 3; 335-340
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dimensional Crossovers in Magnetoresistance of Submicron Films and Wires of CdTe:In
Autorzy:
Jaroszyński, J.
Wróbel, J.
Sawicki, M.
Skośkiewicz, T.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Dietl, T.
Kamińska, E.
Papis, E.
Piotrowska, A.
Duś, R.
Nowakowski, R.
Powiązania:
https://bibliotekanauki.pl/articles/1952536.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Jv
Opis:
We present millikelvin studies of magnetoresistance for epitaxial films and wires of CdTe:In. In comparison to the data with theoretical predictions for the weakly localized regime we put into the evidence the presence of the temperature-induced dimensional crossovers in the studied systems. Our measurements probe the electron phase-breaking rate and indicate that the main dephasing mechanism arises from electron scattering from thermal fluctuations of three- or two-dimensional electron liquid.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1027-1031
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cubic MnTe - Growth by Molecular Beam Epitaxy and Basic Structural Characterization
Autorzy:
Zakrzewski, A.
Janik, E.
Dynowska, E.
Leszczyński, M.
Kutrowski, M.
Wojtowicz, T.
Karczewski, G.
Bąk-Misiuk, J.
Domagała, J.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1873112.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
68.55.Bd
68.55.Jk
Opis:
We report on growth by molecular beam epitaxy of thick layers of MnTe with zinc blende structure. Films as thick as 5.6 µm were obtained. Characterization by X-ray diffraction proved their good structural quality. We determined the lattice constant and its temperature dependence. Broad luminescence due to internal Mn$\text{}^{2+}$- transitions was observed. It showed an unexpected temperature dependence.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 433-436
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization and Selected Physical Properties of CdTe/MnTe Short Period Strained Superlattices
Autorzy:
Szuszkiewicz, W.
Dynowska, E.
Bąk-Misiuk, J.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Jouanne, M.
Powiązania:
https://bibliotekanauki.pl/articles/1952708.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
63.20.-e
78.30.Fs
Opis:
Phonon excitations in (CdTe)$\text{}_{12}$/(MnTe)$\text{}_{n}$ (100) superlattices (n=2, 4, 8) were investigated at 295 K and 25 K with the use of Raman scattering. From the "folded" phonon frequencies the elastic constant c$\text{}_{11}$ value for MnTe was estimated. The strain arising from lattice mismatch (determined by X-ray diffraction) results in shifts of MnTe and CdTe "confined" LO phonon frequencies. For the precise determination of LO phonon dispersions an additional shift due to Mn diffusion at the CdTe/MnTe interface should be taken into account.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1090-1094
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Non-Ohmic Conductivity of High Resistivity CdTe
Autorzy:
Łusakowski, J.
Szczytkowski, J.
Szadkowski, K.
Kamińska, E.
Piotrowska, A.
Karczewski, G.
Wojtowicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1933850.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.-r
Opis:
Conductivity measurements were carried out at room temperature on samples of nominally undoped Bridgman, bulk crystals and MBE-grown layers of CdTe. The samples were equipped with indium contacts which made it possible to determine the voltage distribution along the path of the current flow. The results show that for both types of CdTe almost all of the applied voltage drops in the vicinity of the positively biased contact. The resistance of the samples was shown not to depend on the distance between the pads. The results agree with predictions of model of current injection into semiconductors with deep traps.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 803-806
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Indium Doping of CdTe Grown by Molecular Beam Epitaxy
Autorzy:
Karczewski, G.
Zakrzewski, A.
Kutrowski, M.
Jaroszyński, J.
Dobrowolski, W.
Grodzicka, E.
Janik, E.
Wojtowicz, T.
Kossut, J.
Barcz, A.
Powiązania:
https://bibliotekanauki.pl/articles/1932089.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
73.61.Ga
Opis:
We report on n-type indium doping of CdTe films grown by molecular beam epitaxy on (001) GaAs substrates. By adjusting the flux of In atoms we can precisely control the carrier concentration over three orders of magnitude - from 8 × 10$\text{}^{14}$ up to 1.3 × 10$\text{}^{18}$ cm$\text{}^{-3}$. In agreement with earlier reports we confirmed that Cd overpressure plays an important role in the doping process. The doping appears to be most effective for Cd/Te pressure ratio of 1.5. For this value of Cd/Te pressure ratio essentially 100% efficiency of doping is achieved at low In concentrations (< 10$\text{}^{18}$ cm$\text{}^{-3}$). At higher In concentrations acceptor impurities compensate shallow donors limiting the concentration of free carriers.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 241-244
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Conductance Fluctuations in Quantum Wires of n-CdTe and n-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te
Autorzy:
Jaroszyński, J.
Wróbel, J.
Sawicki, M.
Skośkiewicz, T.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Dietl, T.
Kamińska, E.
Papis, E.
Barcz, A.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/1934061.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.15.Rn
73.61.Ga
73.20.Fz
Opis:
We present millikelvin studies of magnetoconductance in submicron wires of In-doped n$\text{}^{+}$-CdTe and n$\text{}^{+}$-Cd$\text{}_{0.99}$Mn$\text{}_{0.01}$Te epilayers. Weak-field magnetoresistance which arises from quantum localization as well as universal conductance fluctuations have been observed. The exchange coupling to magnetic impurities is shown to decrease the correlation field of the fluctuations. This novel effect is interpreted by invoking a new driving mechanism of the magnetoconductance fluctuations - the redistribution of the electrons between energy levels of the system, induced by the giant s-d spin-splitting of the electronic states.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 1000-1004
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Raman Characterization of MBE-Grown Layered MnTe/CdTe Structures
Autorzy:
Szuszkiewicz, W.
Jouanne, M.
Morhange, J.
Kanehisa, M. A.
Mariette, H.
Hartmann, J. M.
Dynowska, E.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Barnaś, J.
Powiązania:
https://bibliotekanauki.pl/articles/1968435.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.30.Ds
78.30.-j
75.70.Ak
Opis:
Raman scattering measurements on (MnTe)$\text{}_{8}$/(Cd$\text{}_{0.64}$Zn$\text{}_{0.36}$Te)$\text{}_{8}$ multilayer grown by MBE method and on various (MnTe)$\text{}_{n}$/(CdTe)$\text{}_{12}$ multilayers (where n=8,12,16,24) were performed at low temperatures. In the z̅(x,x)z polarization, structures corresponding to folded acoustic phonons were found. In z̅(x,y)z polarization new complex structures were observed in the low-frequency part of Raman scattering spectra. A possible magnetic origin of these structures is discussed.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 1021-1024
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical and Structural Properties of Ohmic Contacts to n-Type and High Resistivity CdTe
Autorzy:
Kamińska, E.
Piotrowska, A.
Guziewicz, M.
Gierlotka, S.
Papis, E.
Łusakowski, J.
Szadkowski, K.
Kwiatkowski, S.
Dietl, T.
Grabecki, G.
Jaroszyński, J.
Karczewski, G.
Zakrzewski, A. K.
Powiązania:
https://bibliotekanauki.pl/articles/1873052.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
Opis:
The interaction between CdTe and In during the formation of an ohmic contact has been investigated. Emphasis is placed on the study of the effect of thermally induced sublimation of cadmium on electrical properties of contacts. Presented results prove the effectiveness of cap annealing and rapid thermal processing in fabrication of improved ohmic contacts with limited Cd losses during the contacting procedure.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 411-414
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Elastic Properties of Zinc Blende MnTe
Autorzy:
Djemia, P.
Roussigné, Y.
Stashkevich, A.
Szuszkiewicz, W.
Gonzalez Szwacki, N.
Dynowska, E.
Janik, E.
Kowalski, B. J.
Karczewski, G.
Bogusławski, P.
Jouanne, M.
Morhange, J.
Powiązania:
https://bibliotekanauki.pl/articles/2038250.pdf
Data publikacji:
2004-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
62.20.Dc
75.50.Pp
78.35.+c
Opis:
The Brillouin light scattering was used to investigate elastic properties of the zinc blende, MBE-grown MnTe layer that was deposited on a (001) GaAs substrate covered by CdTe buffer layer. The three elastic constants of the zinc blende MnTe, namely c$\text{}_{11}$, c$\text{}_{12}$, and c$\text{}_{44}$, were directly determined for the first time from the frequency of the Rayleigh mode, of the pseudo-surface mode, and of the shear horizontal bulk mode traveling parallel to the layer surface. The value of c$\text{}_{11}$ was checked using the frequency of longitudinal bulk waves propagating at different angles from the normal of the layer plane. This value was also independently determined by results of the folding of acoustic phonons, observed for MnTe/CdTe superlattices by the Raman scattering. Finally, the bulk modulus given by the formula B=(c$\text{}_{11}$+2c$\text{}_{12}$)/3 was determined for zinc blende MnTe by ab initio calculations making use of the density functional theory and atomic pseudopotentials; spin polarization of MnTe was taken into account. A satisfactory agreement between theoretical and experimental values was obtained.
Źródło:
Acta Physica Polonica A; 2004, 106, 2; 239-247
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Quantum Hall Ferromagnet in Magnetically-Doped Quantum Wells
Autorzy:
Andrearczyk, T.
Jaroszyński, J.
Wróbel, J.
Karczewski, G.
Wojtowicz, T.
Papis, E.
Kamińska, E.
Piotrowska, A.
Popović, D.
Dietl, T.
Powiązania:
https://bibliotekanauki.pl/articles/2036881.pdf
Data publikacji:
2003-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.43.Nq
72.25.Dc
73.61.Ga
75.50.Pp
Opis:
The article reviews our recent studies on quantum Hall ferromagnetism in diluted magnetic semiconductors. We carried out magnetoresistance studies on modulation-doped, gated heterostructures of (Cd,Mn)Te/(Cd,Mg)Te:I. We put into evidence the formation of Ising quantum Hall ferromagnet with Curie temperature T$\text{}_{C}$ as high as 2 K. Quantum Hall ferromagnetism is manifested by anomalous magnetoresistance maxima. Moreover, magnitude of these spikes depends dramatically on the history of the sample, shows hysteresis when either magnetic field or gate voltage are swept, stretched-exponential time evolution characteristic of glassy systems, and strong Barkhausen noise. Our study suggests that these metastabilities stem from the slow dynamics of ferromagnetic domains.
Źródło:
Acta Physica Polonica A; 2003, 104, 2; 93-102
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Digital Magnetic Quantum Wells for the Study of Interface Sharpness of Molecular Beam Epitaxy Grown Structures
Autorzy:
Wojtowicz, T.
Karczewski, G.
Żakrzewski, A.
Kutrowski, M.
Janik, E.
Dynowska, E.
Kopalko, K.
Kret, S.
Kossut, J.
Laval, J. Y.
Powiązania:
https://bibliotekanauki.pl/articles/1931933.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Dx
78.55.Et
Opis:
We report on the growth and basic characterization of digital magnetic quantum wells, that is, quantum wells in which the well material is itself a short period superlattice composed of alternating diluted magnetic and nonmagnetic semiconductor layers each only a few monolayers thick. These novel structures can be useful in a variety of studies, including studies of barrier-well interface sharpness.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 165-168
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hole Traps in ZnTe with CdTe Quantum Dots
Autorzy:
Zielony, E.
Płaczek-Popko, E.
Gumienny, Z.
Trzmiel, J.
Karczewski, G.
Guziewicz, M.
Powiązania:
https://bibliotekanauki.pl/articles/1791335.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
73.21.La
73.20.Hb
Opis:
In this study the capacitance-voltage (C-V) and deep level transient spectroscopy measurements have been performed on ZnTe (p-type)-Ti/Al Schottky diodes containing a layer of CdTe self-assembled quantum dots and on the reference diodes without dots for comparison. Both kinds of investigated samples were grown by molecular beam epitaxy technique. The dots were formed during the Stransky-Krastanov growth mode. Comparison of the C-V and deep level transient spectroscopy results obtained for both samples allows us to conclude that the 0.26 eV trap observed exclusively for the QD sample can be assigned to some defects in a wetting layer or CdTe/ZnTe interface.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 885-887
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Capacitance-Voltage Studies of Ti/p-ZnTe Schottky Barrier Structures Containing CdTe Quantum Dots
Autorzy:
Placzek-Popko, E.
Szatkowski, J.
Zielony, E.
Gumienny, Z.
Dobaczewski, L.
Karczewski, G.
Powiązania:
https://bibliotekanauki.pl/articles/2048047.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
73.21.La
73.20.Hb
Opis:
In this paper the electronic states of self-organized CdTe quantum dots embedded in ZnTe matrix are studied by means of capacitance-voltage (C-V) characteristics within the temperature range of 180-300 K. A reference diode of the same layer structure but without quantum dots is studied also for comparison. The C-V characteristics measured for the reference diode exhibit bulk behaviour in contrast to the quantum dots sample for which a characteristic step corresponding to discharging of quantum dots is clearly visible within broad range of temperatures. A quasistatic model based on the self-consistent solution of the Poisson equations is used to simulate the capacitance. By comparison the calculated C-V curve with experimental curve the apparent thermal activation energy for hole emission from the quantum dots to the ZnTe matrix is found to be equal to (0.12 ± 0.03) eV.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 621-623
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 28

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