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Wyszukujesz frazę "Bugajski, A." wg kryterium: Autor

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    Wyświetlanie 1-11 z 11
    Tytuł:
    The role of photoluminescence excitation spectroscopy in investigation of quantum cascade lasers properties
    Autorzy:
    Wójcik-Jedlińska, A.
    Gradkowski, K.
    Kosiel, K.
    Bugajski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/378431.pdf
    Data publikacji:
    2006
    Wydawca:
    Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
    Tematy:
    lasery
    AlGaAs
    lasery kaskadowe
    fotoluminescencja
    modelowanie numeryczne
    spektroskopa
    lasers
    Quantum Cascade Laser (QCL)
    photoluminescence
    numerical simulations
    spectroscopy
    Opis:
    The properties of quantum cascade laser (QCL) structures have been investigated by optical technique based on spontaneous emission measurements: photoluminescence excitation (PLE) spectroscopy. Three types of test structures used for obtaining final QCL device were examined , i.e., single sequence of coupled quantum wells, which form an active region of the device, 30 sequences of this active region separated by 25 nm thick AlGaAs barriers and finally complete, undoped structure consisting of 30 of sequences repeated active regions and superlattice injectors. The results has been compared with numerical simulations. The role of such measurements has also been discussed.
    Źródło:
    Electron Technology : Internet Journal; 2005-2006, 37/38, 10; 1-4
    1897-2381
    Pojawia się w:
    Electron Technology : Internet Journal
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Angular and Temperature Tuning of Emission from Vertical-External-Cavity Surface-Emitting Lasers (VECSELs)
    Autorzy:
    Wójcik-Jedlińska, A.
    Muszalski, J.
    Bugajski, M.
    Łukowski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812025.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Px
    85.35.Be
    78.67.De
    42.55.Sa
    42.55.Xi
    Opis:
    In this paper we demonstrate how the tuning of the VECSEL heterostructure can be precisely determined. Since the VECSEL active region is embodied in a microcavity, the photoluminescence signal collected from the chip surface is modified by the resonance of this cavity. The angle resolved photoluminescence measurements combined with the temperature tuning of the structure allowed us to precisely determine VECSEL emission features. The investigated structure consists of GaAs cavity with six InGaAs quantum wells and is designed for lasing at 980 nm.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1437-1443
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The influence of MBE growth conditions on optical properties of InGlGaAs/AlGaAs structures
    Autorzy:
    Kosiel, K.
    Regiński, K.
    Szerling, A.
    Piwoński, T.
    Bugajski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/378399.pdf
    Data publikacji:
    2004
    Wydawca:
    Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
    Opis:
    Optical properties of compressively strained In₀.₂₄Al₀.₁₉Ga₀.₅₇As layers were investigated as a function of the MBE growth conditions. The optimum temperature of the crystal surface (Ts) for MBE growth of this quaternary layer as well as the optimal cooling down process necessary for achieving appropriate Ts for InAlGaAs were experimentally found.
    Źródło:
    Electron Technology : Internet Journal; 2004, 36, 4; 1-3
    1897-2381
    Pojawia się w:
    Electron Technology : Internet Journal
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Study of Thermal Properties of GaAs/AlGaAs Quantum Cascade Lasers
    Autorzy:
    Pruszyńska-Karbownik, E.
    Karbownik, P.
    Szerling, A.
    Kosiel, K.
    Bugajski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807668.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Px
    85.60.-q
    85.35.Be
    72.80.Ey
    Opis:
    Temperature change in quantum cascade laser can be estimated by studying the device resistance change. Using this method we compared quantum cascade laser structure mounted on diamond heat spreader and without heat spreader. We have shown that the use of heat spreader reduces temperature increase even by 40%.
    Źródło:
    Acta Physica Polonica A; 2009, 116, S; S-60-S-61
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Time-Resolved Microwave Spectroscopy of High Electron Mobility GaAs/AlGaAs Structures
    Autorzy:
    Khachepuridze, A.
    Ivanov, V. Yu.
    Godlewski, M.
    Regiński, K.
    Bugajski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1991552.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.20.Dx
    76.40.+b
    76.70.Hb
    Opis:
    Mechanism of the optical detection of cyclotron resonance via emission from 2D electron gas in modulation doped quantum wells and in high electron mobility structures of GaAs/AlGaAs is discussed based on the results of time-resolved optical detection of cyclotron resonance. An important role of impact ionization processes is demonstrated. We also show that microwave radiation destroys emission enhancement at the Fermi level and the relevant mechanism is proposed.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 387-391
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Molecular Beam Epitaxy Growth for Quantum Cascade Lasers
    Autorzy:
    Kosiel, K.
    Szerling, A.
    Kubacka-Traczyk, J.
    Karbownik, P.
    Pruszyńska-Karbownik, E.
    Bugajski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791281.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Px
    81.15.Hi
    85.60.-q
    85.35.Be
    73.63.-b
    63.22.-m
    72.80.Ey
    73.61.Ey
    78.66.Fd
    Opis:
    The fabrication of quantum cascade lasers emitting at 9 μm is reported. The devices operated in pulsed mode at up to 260 K. The peak powers recorded at 77 K were over 1 W and the slope efficiency η ≈ 0.5-0.6 W/A per uncoated facet. This has been achieved by the use of GaAs/$Al_{0.45}Ga_{0.55}As$ heterostructure, with the "anticrossed-diagonal" design. Double plasmon planar confinement with Al-free waveguide has been used to minimize absorption losses. The double trench lasers were fabricated using standard processing technology, i.e., wet etching and $Si_{3}N_{4}$ for electrical insulation. The quantum cascade laser structures have been grown by molecular beam epitaxy, with Riber Compact 21 T reactor. The stringent requirements - placed particularly on the epitaxial technology - and the influence of technological conditions on the device structure properties were presented and discussed in depth.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 806-813
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Analysis of Free-Space Optics Development
    Autorzy:
    Mikołajczyk, J.
    Bielecki, Z.
    Bugajski, M.
    Piotrowski, J.
    Wojtas, J.
    Gawron, W.
    Szabra, D.
    Prokopiuk, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/221245.pdf
    Data publikacji:
    2017
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    optical communications
    open path laser communications
    line of sight communications
    free space optics
    Opis:
    The article presents state of work in technology of free-space optical communications (Free Space Optics - FSO). Both commercially available optical data links and their further development are described. The main elements and operation limiting factors of FSO systems have been identified. Additionally, analyses of FSO/RF hybrid systems application are included. The main aspects of LasBITer project related to such hybrid technology for security and defence applications are presented.
    Źródło:
    Metrology and Measurement Systems; 2017, 24, 4; 653-674
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fermi-Edge Singularity in Excitonic Spectra of Modulation Doped AlGaAs/GaAs Quantum Wells
    Autorzy:
    Bugajski, M.
    Regiński, K.
    Godlewski, M.
    Wesołowski, M.
    Holtz, P. O.
    Buyanov, A. V.
    Monemar, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1950741.pdf
    Data publikacji:
    1996-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.35.+z
    85.30.De
    Opis:
    The dynamic response of an electron Fermi sea to the presence of optically generated holes gives rise to an enhanced interaction of correlated electron-hole pairs near the Fermi level, resulting in an enhanced oscillator strength for optical transitions, referred to as the Fermi-edge singularity. We studied this effect in modulation-doped quantum wells which provide confined dense Fermi sea, spatially separated from dopant atoms, easily accessible for investigations under low excitation conditions. The Fermi-edge singularity was observed in both photoluminescence and photoluminescence excitation experiments, although in the case of photoluminescence the samples had to be either co-doped with acceptors in the wells to provide necessary localization of holes or designed to allow for nearly resonant scattering between the electronic states near the Fermi energy and the next unoccupied subband of the 2D electron gas.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 4; 751-754
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Low Threshold Room Temperature AlGaAs/GaAs GRIN SCH SQW Lasers Grown by MBE
    Autorzy:
    Kaniewska, M.
    Regiński, K.
    Muszalski, J.
    Kryńska, D.
    Litkowiec, A.
    Kaniewski, J.
    Wesołowski, M.
    Bugajski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1951031.pdf
    Data publikacji:
    1996-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.30.De
    85.60.Jb
    73.20.Dx
    Opis:
    Low threshold room temperature AlGaAs/GaAs graded-index separate-confinement heterostructure single quantum well (GRIN SCH SQW) lasers were prepared by MBE. The influence of the growth temperature on the laser parameters was studied. Due to the high temperature MBE growth and the use of p-contact layer in the form of thin quasi-metallic beryllium layer significant reduction of the threshold current was achieved.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 4; 847-850
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Mid-Infrared GaAs/AlGaAs Quantum Cascade Lasers Technology
    Autorzy:
    Szerling, A.
    Karbownik, P.
    Kosiel, K.
    Kubacka-Traczyk, J.
    Pruszyńska-Karbownik, E.
    Płuska, M.
    Bugajski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807678.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Px
    85.60.-q
    85.35.Be
    72.80.Ey
    73.61.Ey
    78.66.Fd
    Opis:
    The fabrication technology of AlGaAs/GaAs based quantum cascade lasers is reported. The devices operated in pulsed mode at up to 260 K. The peak powers recorded at 77 K were over 1 W for the GaAs/$Al_{0.45}Ga_{0.55}As$ laser without anti-reflection/high-reflection coatings.
    Źródło:
    Acta Physica Polonica A; 2009, 116, S; S-45-S-47
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    GaAs/AlGaAs (~9.4 žm) quantum cascade lasers operating at 260 K
    Autorzy:
    Bugajski, M.
    Kosiel, K.
    Szerling, A.
    Kubacka-Traczyk, J.
    Sankowska, I.
    Karbownik, P.
    Trajnerowicz, A.
    Pruszy, E.
    Pierciński, K.
    Pierścińska, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/200656.pdf
    Data publikacji:
    2010
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    quantum cascade lasers
    pulsed mode
    Opis:
    The fabrication of Quantum Cascade Lasers (QCLs) emitting at 9.4 um is reported. The devices operated in pulsed mode at up to 260 K. The peak powers recorded in 77 K were over 1 W, and the slope efficiency 0.5–0.6 W/A per uncoated facet. This has been achieved by the use of GaAs/Al0.45Ga0.55As heterostructure, with 3QW anticrossed-diagonal design originally proposed by Page et al. [1]. Double plasmon planar confinement with Al-free waveguide has been used to minimize absorption losses. The double trench lasers were fabricated using standard processing technology, i.e., wet etching and Si3N4 for electrical insulation. The QCL structures have been grown by Molecular Beam Epitaxy (MBE), with Riber Compact 21T reactor. The stringent requirements – placed particularly on the epitaxial technology – and the influence of technological conditions on the device structure properties are presented and discussed in depth.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2010, 58, 4; 471-476
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-11 z 11

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