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Wyświetlanie 1-15 z 34
Tytuł:
Photoreflectance Studies of InGaAs/GaAs/AlGaAs Single Quantum Well Laser Structures
Autorzy:
Ochalski, T. J.
Żuk, J.
Regiński, K.
Bugajski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1992051.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
78.20.-e
Opis:
We report on photoreflectance investigations of strained-layer In$\text{}_{0.2}$Ga$\text{}_{0.8}$As/GaAs/Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As single quantum well laser structures grown by molecular beam epitaxy. All the observed photoreflectance spectral features were assigned to the e-hh transitions with Δn=0. The transition energies were determined and compared to their values calculated within the envelope function approximation. Assuming that one third of the total strain in the central In$\text{}_{0.2}$Ga$\text{}_{0.8}$As layer is relaxed by biaxial deformation of surrounding thin GaAs layers, it is possible to explain reasonably the results of our photoreflectance experiment.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 463-467
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Oriented Thin Films for Nonlinear Optics
Autorzy:
Kajzar, F.
Lorin, A.
Le Moigne, J.
Szpunar, J.
Powiązania:
https://bibliotekanauki.pl/articles/1933314.pdf
Data publikacji:
1995-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.65.-k
78.20.-e
83.80.Es
Opis:
Nonlinear optical dichroism technique is shown to be an useful tool for the 1D conjugated polymer chain orientation study. When done as a function of rotation angle it gives the order parameters. These parameters can be also obtained by coupling this technique with linear dichroism method. The technique is illustrated by third harmonic generation on epitaxied polydiacetylene thin films either on single-crystalline or on preoriented ultrathin films by rubbing. Whereas an almost perfect orientation is obtained in the case of epitaxy of p-DCH, poly [1,6-bis(N-carbazolyl)-2,4-hexadiyne], on KAP, potassium acid phthalate, single crystal, this is smaller for epitaxy on preoriented substrate. The results are correlated with thin film texture measurements with X-rays. A good overall agreement is seen except that X-ray data show better order than nonlinear optical dichroism. A possible origin of this difference is shortly discussed.
Źródło:
Acta Physica Polonica A; 1995, 87, 4-5; 713-722
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Properties of Molybdenum Disulfide $(MoS_2)$
Autorzy:
Gołasa, K.
Grzeszczyk, M.
Korona, K.
Bożek, R.
Binder, J.
Szczytko, J.
Wysmołek, A.
Babiński, A.
Powiązania:
https://bibliotekanauki.pl/articles/1399110.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
63.22.-m
71.35.-y
78.20.-e
78.30.-j
Opis:
Research of a monolayer and a bulk $MoS_2$ is reported. The room temperature Raman spectra of the natural $MoS_2$ crystals for the both resonant (632.8 nm) and the non-resonant (532 nm) excitation are presented. The apparent differences observed in the spectra from the bulk and the one monolayer $MoS_2$ are discussed. In particular, the feature due to a first order scattering involving the LA(M) phonon in the resonance Raman spectrum of the one monolayer $MoS_2$ was observed and explained in terms of the disorder in the natural crystal. The disorder is also documented by the line-shape of the room-temperature photoluminescence spectra observed from both the bulk and the one monolayer $MoS_2$.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 849-851
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Type I CdSe and CdMgSe Quantum Wells
Autorzy:
Rudniewski, R.
Rousset, J.
Janik, E.
Kossacki, P.
Golnik, A.
Nawrocki, M.
Pacuski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1376087.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
81.05.Dz
81.07.-b
Opis:
In this work we present the band gap engineering, epitaxial growth and optical characterization of CdSe/$Cd_{0.9}Mg_{0.1}Se$ and $Cd_{0.9}Mg_{0.1}Se$/$Cd_{0.85}Mg_{0.15}Se$ quantum wells with a thickness ranging from 1 to 15 nm. These structures exhibit strong near-band-gap photoluminescence from helium up to room temperature. The emission energy is tuned in the range from 1.74 to 2.1 eV at 7 K, depending on the thickness and well composition. The most intense photoluminescence (both at 7 and 300 K) was observed for 10 nm thick CdSe/$Cd_{0.9}Mg_{0.1}Se$ wells. Such a structure gives also a sharp emission line (FWHM = 20 meV) at low temperature. The presented quantum wells are well suited for being embedded in lattice matched ZnTe based microcavities.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1167-1170
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical and Structural Properties of Zn$\text{}_{1-x}$Be$\text{}_{x}$Se Mixed Crystals
Autorzy:
Firszt, F.
Łęgowski, S.
Męczyńska, H.
Szatkowski, J.
Zakrzewski, J.
Paszkowicz, W.
Domagała, J.
Marczak, M.
Powiązania:
https://bibliotekanauki.pl/articles/1969072.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
78.20.-e
62.65.+k
Opis:
Optical and structural properties of Zn$\text{}_{1-x}$Be$\text{}_{x}$Se bulk crystals in the range of composition 0 ≤ x ≤ 0.41 have been studied. These crystals were grown by Bridgman method under an argon overpressure. Transmission, absorption, photoluminescence and photoacoustic spectra as a function of composition were investigated. It has been found that the crystal structure is of sphalerite type. The crystal quality increases when the crystallization process of the same boule is performed more than once. In the investigated composition range the lattice constant decreases and the energy gap increases with increasing beryllium content. From photoluminescence measurements the excitonic energy gap about 3.64 eV at 40 K was estimated for the highest obtained Be concentration (x=0.41).
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 309-312
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Low-Dimensional Structures of Diluted Magnetic (Semimagnetic) Semiconductors - a Subjective Review
Autorzy:
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/2030390.pdf
Data publikacji:
2001-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
78.67.-n
75.70.-i
Opis:
A review on selected areas of research on low-dimensional structures consisting of diluted magnetic (semimagnetic) semiconductors is attempted. In the introductory part, after short historical preliminaries, we describe some early ideas and speculations concerning properties of such structures and we confront them with real results obtained in the course of their experimental investigations. Several issues are addressed to but, in view of the richness of the field, the review is by no means not pretending to be an exhaustive one. We begin with early studies of metal-insulator-semiconductor structures and progress to structures grown by molecular beam epitaxy. We discuss, in particular, the idea of a spin superlattice, type-I-to-type-II transition, wave functions mapping, and detailed determination of the profiles of realistic quantum wells. We put special emphasis on digital growth and, specifically, parabolic and half-parabolic quantum wells, use of tunable g-factor in studies of trions, self-assembled quantum dots, spin injection and, finally, on hybrid structures of ferromagnets and diluted magnetic semiconductor structures. The focus of the present paper is on work done in the Institute of Physics of the Polish Academy of Sciences, mostly in the Laboratory of Growth and Physics of Low-Dimensional Crystals.
Źródło:
Acta Physica Polonica A; 2001, 100, Supplement; 111-138
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Infrared active phonons and optical band gap in multiferroic GdMnO₃ studied by infrared and UV-visible spectroscopy
Autorzy:
Bukhari, S.
Ahmad, J.
Powiązania:
https://bibliotekanauki.pl/articles/1075504.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
63.20.-e
78.20.-e
72.20.-i
73.20.Mf
Opis:
Optical properties of multiferroic GdMnO₃ synthesized by sol-gel method have been investigated by measuring the infrared reflectivity and UV-visible absorption spectra. The infrared reflectivity spectrum of polycrystalline GdMnO₃ in the frequency range 30-7500 cm^{-1} at room temperature contains several phonon modes. The resonant frequency of observed infrared active phonon modes is found comparable with theoretically predicted results. Mean Born effective charges are calculated and discussed in view of the origin of ferroelectricity in GdMnO₃. Three strong absorption peaks observed in the UV-visible spectrum are attributed to the Mn (3d)-electron transitions. The optical band gap ≈1.2 eV is estimated from UV-visible absorption spectrum using Tauc's relation. GdMnO₃ seems to behave like an indirect gap semiconductor.
Źródło:
Acta Physica Polonica A; 2016, 129, 1; 43-48
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Voltage Controlled Terahertz Transmission Enhancement through GaN Quantum Wells
Autorzy:
Laurent, T.
Sharma, R.
Torres, J.
Nouvel, P.
Blin, S.
Chusseau, L.
Palermo, C.
Varani, L.
Cordier, Y.
Chmielowska, M.
Faurie, J.
Beaumont, B.
Shiktorov, P.
Starikov, E.
Gruzinskis, V.
Powiązania:
https://bibliotekanauki.pl/articles/1505459.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
78.67.De
73.21.Fg
Opis:
We report transmission measurements of GaN quantum well grown on sapphire substrate in the 220-325 GHz frequency band at low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 107-110
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Properties of Plastically Deformed Copper
Autorzy:
Trajić, J.
Rudolf, R.
Anžel, I.
Romčević, M.
Lazarević, N.
Mirić, M.
Lazarević, Z.
Hadžić, B.
Romčević, N.
Powiązania:
https://bibliotekanauki.pl/articles/1537910.pdf
Data publikacji:
2010-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
78.30.j
78.40.kc
Opis:
Pure copper (99.99), prepared in the sample of square cross-section (10 × 10 $mm^{2}$) and length about 50 mm, was extremely plastically deformed with the repeated application of Equal Channel Angular Pressing (ECAP). ECAP was applied as an effective technique for producing bulk nano-scaled structures. Optical properties of the sample were investigated using Raman spectroscopy. Two types of lines: narrow (with width of ≈ 7 $cm^{-1}$) and wide ( ≈ 40 $cm^{-1}$) are registered. Existence of two types of lines indicates that in the specimen exists nano-sized crystal structures of both Cu and CuO related with three dimensional amorphous boundary spaces, which indicates that plastic deformation of the sample did not lead to total amorphisation of the specimen.
Źródło:
Acta Physica Polonica A; 2010, 117, 5; 791-793
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Near IR Refractive Index for GaInN Heavily Doped with Silicon
Autorzy:
Cywiński, G.
Kudrawiec, R.
Rzodkiewicz, W.
Kryśko, M.
Litwin-Staszewska, E.
Misiewicz, J.
Skierbiszewski, C.
Powiązania:
https://bibliotekanauki.pl/articles/1791356.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
78.66.Fd
81.15.Hi
68.55.-a
78.20.-e
Opis:
The authors report on growth and results of infrared measurements of GaInN heavily doped with silicon. The lattice matched to GaN epitaxial layer of $Ga_{0.998}In_{0.002}N:Si$ has been grown in plasma assisted molecular beam epitaxy in the metal rich conditions. The room temperature Hall concentration and mobility of electrons are 2× $10^{20} cm^{-3}$ and 67 $cm^{2}$/(Vs), respectively. The refractive index has been determined by variable angle spectroscopic ellipsometry. The refractive index exhibited a significant reduction of its value (from 2.25 to 2 at 1.55 μm) at near IR range where are the main interests of potential applications for nitride based intersubband devices. Reported here values of refractive indices at 1.55 and 1.3 μm are appropriate for fabrication of cladding layers with the required contrast to GaN for intersubband devices. The observed drop of refractive index is attributed to the carrier-induced plasma edge effect, which has been directly observed in reflectance spectrum.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 936-938
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thermo-Optical Parameters of Amorphous a-C:N:H Layers
Autorzy:
Pieczyńska, E.
Jaglarz, J.
Marszalek, K.
Tkacz-Śmiech, K.
Powiązania:
https://bibliotekanauki.pl/articles/1377543.pdf
Data publikacji:
2014-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.60.Fs
78.20.-e
78.20.Ci
78.20.N-
78.30.Ly
81.05.U-
81.15.Gh
Opis:
Thermo-optical properties of hydrogenated amorphous carbon nitride layers (a-C:N:H) deposited on crystalline silicon by plasma assisted chemical vapour deposition were studied. The layers were characterized by the Fourier transform infrared spectroscopy and their chemical composition, i.e. [N]/[C] ratio, was determined by energy dispersive X-ray technique. The optic measurements were made by spectroscopic ellipsometer Wollam M2000 equipped with a heated vacuum chamber. The measurements of ellipsometric angles were carried out during heating the sample from room temperature to 300°C. Refractive index, extinction coefficient and the layer thicknesses were calculated by fitting the model of the layer to the ellipsometric data. The results confirm that at about 23°C the layer properties are changed. The measured thermo-optical parameters, dn/dT and dk/dT, show abrupt change from negative to positive values which can be explained by structure graphitization. Simultaneously, the bandgap decreases from 2.5 to 0.7 eV and the layer thickness drops to about 50% of the initial value.
Źródło:
Acta Physica Polonica A; 2014, 126, 6; 1241-1245
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Epitaxial Layer Thickness on Built-in Electric Field in Region of AlGaAs/SI-GaAs Interface: A Photoreflectance Study
Autorzy:
Ochalski, T. J.
Żuk, J.
Vlasukova, L. A.
Powiązania:
https://bibliotekanauki.pl/articles/1968408.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
78.20.-e
Opis:
We present a study of detailed line shapes of photoreflectance spectra for Al$\text{}_{0.3}$Ga$\text{}_{0.7}$ As/SI-GaAs epitaxial layers grown by MBE. All measurements were performed at 80 K under UHV conditions with a special care for the samples surface quality. A set of the photoreflectance spectra was collected for photon energies close to the GaAs and Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As band gaps (E$\text{}_{0}$). The photoreflectance spectra originated in the vicinity of the Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As/SI-GaAs interface were analyzed using the complex Airy function model of Franz-Keldysh oscillations. To examine the effect of the epitaxial layer thickness on parameters characterizing the interface, a step-by-step chemical etching was applied for stripping the top layers. The built-in electric field intensity, field inhomogeneity and phenomenological broadening parameter for interface regions were determined as a function of the epilayer thickness.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 935-939
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of Transparent and Nanocrystalline $TiO_{2}:Nd$ Thin Films Prepared by Magnetron Sputtering
Autorzy:
Domaradzki, J.
Wojcieszak, D.
Prociow, E.
Kaczmarek, D.
Powiązania:
https://bibliotekanauki.pl/articles/1807648.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.82.Rx
68.55.-a
68.60.-p
68.60.Dv
78.20.-e
Opis:
In this work structural and optical properties of $TiO_{2}$ thin films doped with different amount of Nd have been outlined. The result have shown that by quantity of Nd amount in the film dense nanocrystalline or amorphous thin films were obtained.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-75-S-77
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synthesis of Bismuth Oxide Thin Films Deposited by Reactive Magnetron Sputtering
Autorzy:
Iljinas, A.
Burinskas, S.
Dudonis, J.
Powiązania:
https://bibliotekanauki.pl/articles/1503904.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Cd
68.55.-a
78.20.-e
Opis:
In this work $Bi_2O_3$ thin films were deposited onto the Si (111) and soda lime glass substrates by the reactive direct current magnetron sputtering system using pure Bi as a sputtering target. The dependences of electro-optical characteristics of the films on the substrate type and temperature were investigated. Transmittance and reflectance of the $Bi_2O_3$ films were measured with ultraviolet and visible light spectrometer. It was found that the substrate temperature during deposition has a very strong influence on the phase components of thin films. The results indicate that the direct allowed transitions dominate in the films obtained in this work. For the direct allowed transitions the band gap energy is found to be about 1.98 eV and 2.2 eV. The reflectance of thin bismuth oxide film depends on the substrate. Small transparency of thin films grown on glass is more related to large reflectance than absorption. The reflectance spectra of the bismuth oxide thin films deposited on the Si substrates show higher quality of optical characteristics compared to the samples deposited on glass substrates.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 60-62
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Infrared Optical and X-Ray Determination of Parameters for MOVPE Grown InAs$\text{}_{1-x}$Sb$\text{}_{x}$ Epilayers
Autorzy:
Marszałek, B.
Zielińska-Rohozińska, E.
Bożek, R.
Stępniewski, R.
Witowski, A. M.
Powiązania:
https://bibliotekanauki.pl/articles/1968371.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.-b
78.20.-e
78.30.-j
Opis:
The experimental room-temperature transmission of metalorganic vapour phase epitaxy grown InAsSb epilayers is compared with calculations based on a Kane model of the band structure. The band structure parameters are found. The composition of the samples was determined by X-ray diffraction.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 919-922
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 34

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