Type I CdSe and CdMgSe Quantum Wells

In this work we present the band gap engineering, epitaxial growth and optical characterization of CdSe/$Cd_{0.9}Mg_{0.1}Se$ and $Cd_{0.9}Mg_{0.1}Se$/$Cd_{0.85}Mg_{0.15}Se$ quantum wells with a thickness ranging from 1 to 15 nm. These structures exhibit strong near-band-gap photoluminescence from helium up to room temperature. The emission energy is tuned in the range from 1.74 to 2.1 eV at 7 K, depending on the thickness and well composition. The most intense photoluminescence (both at 7 and 300 K) was observed for 10 nm thick CdSe/$Cd_{0.9}Mg_{0.1}Se$ wells. Such a structure gives also a sharp emission line (FWHM = 20 meV) at low temperature. The presented quantum wells are well suited for being embedded in lattice matched ZnTe based microcavities.