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Wyświetlanie 1-15 z 52
Tytuł:
The Nonlinear Absorption Coefficient for Direct Two-Photon Creation of Biexciton
Autorzy:
Ungier, W.
Suffczyński, M.
Powiązania:
https://bibliotekanauki.pl/articles/2030428.pdf
Data publikacji:
2002-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.-y
Opis:
The absorption coefficient for the two-photon creation of biexciton is calculated for CuCl and wurtzite crystals. Because of the resonance effect only the intermediate lowest optically active excitonic states are taken into account. The absorption coefficient is expressed by a functional of the biexciton envelope. The numerical results are computed with the envelope function of Hylleraas-Ore type (modified and minimized by Brinkman et al). The obtained results for CuCl are in good agreement with absorption measurements published by Gale and Mysyrowicz.
Źródło:
Acta Physica Polonica A; 2002, 101, 2; 295-300
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Radiative Biexciton-exciton Recombination in Wurtzite Crystals
Autorzy:
Ungier, W.
Powiązania:
https://bibliotekanauki.pl/articles/1992347.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.-y
Opis:
In the effective mass approximation in the two-band model of semiconductor the dipole moment matrix element due to the biexciton-exciton transition is expressed by the functional of the exciton and biexciton envelopes. In comparison to previous estimations of the biexciton-exciton transition probability the detailed band structure at band extrema was taken into account and the biexciton envelope optimized by variational calculation was used in calculations. The oscillator strength ratio I$\text{}^{2}$=f$\text{}_{biex-ex}$/f$\text{}_{band-to-band}$ is given for several values of σ=m$\text{}_{e}$/m$\text{}_{h}$. The calculated functional I for CdS is about four times smaller compared to that obtained by Hanamura. The calculated giant oscillator strength of the biexciton-exciton recombination in CdS is f$\text{}_{biex-ex}$=4×10$\text{}^{2}$.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 588-592
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Direct Two-Photon Creation of Excitonic Molecule in CuCl
Autorzy:
Ungier, W.
Janiszewski, P.
Suffczyński, M.
Powiązania:
https://bibliotekanauki.pl/articles/2014354.pdf
Data publikacji:
2000-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.-y
Opis:
The probability of direct excitation of excitonic molecule in the two-photon absorption process is calculated with an Hylleraas-Ore type biexciton envelope, which is variationally optimized. In the second order of perturbation, because of the resonance effect, only the exciton Γ$\text{}_{5}$ intermediate state is taken into account. The band structure at band extrema due to spin-orbit interaction is assumed. The transition probability of two-photon absorption is expressed by matrix element between the free exciton and the biexciton envelopes. The obtained probability of two-photon absorption in CuCl is about three orders of magnitude smaller when compared to that obtained by Hanamura.
Źródło:
Acta Physica Polonica A; 2000, 98, 4; 411-417
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
From Localised to Ballistic Excitons in GaAs Quantum Wells
Autorzy:
Pulizzi, F.
Christianen, P. C. M.
Maan, J. C.
Eshlaghi, S.
Reuter, D.
Wieck, A. D.
Powiązania:
https://bibliotekanauki.pl/articles/2028827.pdf
Data publikacji:
2001-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.-y
71.36.+c
Opis:
The lateral motion of excitons in GaAs quantum wells is studied by means of spatially resolved photoluminescence. We show that at low temperatures (4.2 K) the exciton motion evolves from localised excitons (zero mobility) in thin quantum wells to extremely high mobilities in wide wells. We find that for the widest quantum well investigated the observed motion cannot be explained by simple exciton diffusion and must be explained by the propagation of ballistic exciton polaritons.
Źródło:
Acta Physica Polonica A; 2001, 100, 3; 397-402
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Semiconductor Bands Bending on Exciton Photoluminescence
Autorzy:
Konin, A.
Powiązania:
https://bibliotekanauki.pl/articles/1813400.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.-y
71.35.Cc
Opis:
A theoretical model for calculation of the Wannier-Mott exciton distribution in semiconductor sample accounting for the energy bands bending near semiconductor surface is presented. It is shown that the exciton distribution essentially depends on the surface potential under certain sample surface and bulk parameters. Changing the surface potential value we can study the exciton photoluminescence from the illuminated surface and from a thin layer near this surface.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 1035-1038
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Experimental Study of Optical Transitions in Be-Doped GaAs/AlAs Multiple Quantum Wells
Autorzy:
Kundrotas, J.
Čerškus, A.
Ašmontas, S.
Valušis, G.
Sherliker, B.
Halsall, M.
Harrison, P.
Steer, M.
Powiązania:
https://bibliotekanauki.pl/articles/1178273.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.-y
78.55.-m
Opis:
We present a photoluminescence study of optical transitions in Be acceptor-doped GaAs/AlAs multiple quantum wells at room and liquid nitrogen temperatures. We investigate excitonic spectra and reveal acceptor-impurity induced effects in multiple quantum wells having different width.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 245-249
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Binding Energies of Excitons in Quantum Well Structures
Autorzy:
Neugebauer, F.
Suisky, D.
Heimbrodt, W.
Powiązania:
https://bibliotekanauki.pl/articles/1992047.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.-y
73.20.Dx
Opis:
Binding energies of excitons in quantum well structures have been studied by solving the time-dependent Schrödinger equation where the potential is made up by the confining quantum well potentials of arbitrary form and the Coulomb interaction between the electron and hole. The problem is solved without the usually assumed variational procedure and the separation ansatz for the confined electron and hole states. The wave functions for electrons and holes can be extracted from the exciton wave function and are used for the interpretation of the charge localization.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 459-462
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Shallow Donors and Acceptors in GaN; Bound Excitons and Pair Spectra
Autorzy:
Stępniewski, R.
Wysmołek, A.
Powiązania:
https://bibliotekanauki.pl/articles/1946873.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.-y
71.55.Eq
71.38.+i
Opis:
Recent photoluminescence results obtained for homoepitaxial GaN layers are presented. Dominant photoluminescence structures observed for these layers can be assigned to excitons bound to neutral impurities. Different methods such as temperature dependent evolution, high magnetic field and time resolved spectroscopy have been used to study the exciton line properties. For the p-type samples sharp lines are observed, assigned to the donor-acceptor recombination for differently distant pairs. The analysis of the optical transitions related to donors and acceptors is in reasonable agreement with the effective mass approximation. Electron phonon interaction was found to strongly affect the optical properties of GaN. The dominant intrinsic defect has been identified as a donor located at a nitrogen site.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 681-690
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Near-Band-Edge Photoluminescence from Very High Quality Hexagonal ZnO Bulk Crystals
Autorzy:
Lieu, N. T. T.
Dat, D. H.
Liem, N. Q.
Powiązania:
https://bibliotekanauki.pl/articles/2035657.pdf
Data publikacji:
2003-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.-y
78.55.-m
78.55.Et
Opis:
The near-band-edge photoluminescence spectra of very high quality hexagonal ZnO single crystals in the temperature range between 9 and 305 K were measured. Based on the energetic positions and the evolutions of well-resolved photoluminescence lines with temperature and with excitation power density we interpret the observed photoluminescence lines as resulting from recombination of the free-exciton, bound-exciton, biexciton, inelastic exciton-exciton collision and electron-hole plasma.
Źródło:
Acta Physica Polonica A; 2003, 103, 1; 67-75
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of dielectric medium anisotropy on the polarization degree of emission from a single quantum dash
Autorzy:
Mrowiński, P.
Tarnowski, K.
Olszewski, J.
Somers, A.
Kamp, M.
Höfling, S.
Reithmaier, J.
Urbańczyk, W.
Misiewicz, J.
Machnikowski, P.
Sęk, G.
Powiązania:
https://bibliotekanauki.pl/articles/1159588.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
71.35.-y
78.55.-m
Opis:
Excitonic emission from single InAs/InGaAlAs/InP quantum dashes has been investigated in the context of degree of linear polarization by post-growth modification of its surrounding dielectric medium. We present optical spectroscopy measurements on a symmetric squared pedestal structures (mesas), and asymmetric rectangular ones oriented parallel or perpendicular to the main in-plane axis of the dashes [1-10]. Polarization resolved microphotoluminescence shows a significant quantitative modification of the degree of linear polarization value from -20% up to 70%. These results have been confronted with calculations of the coupling between the exciton transition dipole moment and electromagnetic field distributed in the vicinity of a quantum dash inside a processed mesa.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-48-A-52
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Enhancement of the Excitonic Photoluminescence in $n^{+}$/i-GaAs by Controlling the Thickness and Impurity Concentration of the $n^{+}$ Layer
Autorzy:
Čerškus, A.
Nargelienė, V.
Kundrotas, J.
Sužiedėlis, A.
Ašmontas, S.
Gradauskas, J.
Johannessen, A.
Johannessen, E.
Powiązania:
https://bibliotekanauki.pl/articles/1505489.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
71.35.-y
71.55.Eq
Opis:
This communication presents the photoluminescence spectra of molecular beam epitaxially grown GaAs structures made from a 500 nm thick layer of intrinsic conductivity capped with a silicon doped layer with a film thickness ranging from 10 to 100 nm. Two different doping concentrations of the cap layer, $N_{Si} = 10^{17} cm^{-3}$ and $N_{Si} = 10^{18} cm^{-3}$, was considered. The results showed the excitonic line of i-GaAs layer enhancement. The intensity of excitonic line was about 160 times higher for the homojunction compared to the intrinsic conductivity epitaxial layer at liquid helium temperature. Possible mechanisms of the observed intensity enhancement in the $n^{+}$/i-GaAs homojunction are discussed.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 154-157
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Peculiarities of Excitonic Photoluminescence in Si δ-Doped GaAs Structures
Autorzy:
Nargelienė, V.
Ašmontas, S.
Čerškus, A.
Gradauskas, J.
Kundrotas, J.
Sužiedėlis, A.
Powiązania:
https://bibliotekanauki.pl/articles/1505529.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
71.35.-y
68.65.-k
Opis:
We present investigation of photoluminescence properties of Si δ-doped GaAs structures at different temperatures and various laser excitation intensities. Strong excitonic emission was observed in the δ-doped structures. The photoluminescence in the infrared region, below excitonic emission, originates from a non-phonon free electron-acceptor e-A transitions and longitudinal optical phonon sidebands of e-A transitions. Possible mechanisms for recombination of photocarriers are discussed, with a particular focus on an enhanced excitonic photoluminescence emission in comparison with that from intrinsic GaAs layers of the same structures.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 177-179
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoluminescence Study of Bulk GaN Doped with Beryllium
Autorzy:
Jaworek, M.
Wysmołek, A.
Kamińska, M.
Twardowski, A.
Boćkowski, M.
Grzegory, I.
Powiązania:
https://bibliotekanauki.pl/articles/2043722.pdf
Data publikacji:
2005-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
71.55.-i
71.35.-y
Opis:
Photoluminescence of bulk GaN:Be grown by high pressure method is presented. The investigated crystals show well-resolved photoluminescence due to free and bound excitons similar to that observed for homoeptitaxial GaN layers. In addition to the excitonic transitions, pronounced luminescence band at 3.38 eV, due to Be acceptor, is observed. It was found that temperature behavior of this emission is typical of donor- and conduction band-acceptor transitions. The optical activation energy of Be acceptor is obtained to be of 60±15 meV.
Źródło:
Acta Physica Polonica A; 2005, 108, 4; 705-710
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoluminescence and Electron Paramagnetic Resonance Studies of Bulk GaN Doped with Gadolinium
Autorzy:
Lipińska, Z.
Pawłowski, M.
Żołnierowicz, H.
Wysmołek, A.
Palczewska, M.
Kamińska, M.
Twardowski, A.
Boćkowski, M.
Grzegory, I.
Powiązania:
https://bibliotekanauki.pl/articles/2046930.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
71.55.-i
71.35.-y
Opis:
Photoluminescence and electron paramagnetic resonance experiments on strain free GaN bulk crystals of wurtzite structure doped with gadolinium are reported. Efficient gettering of residual GaN donors by Gd was observed. Electron paramagnetic resonance showed that Gd ion incorporated into GaN lattice had Gd$\text{}^{3+}$(4f$\text{}^{7}$) configuration. The observed photoluminescence spectra were explained as due to intracenter Gd$\text{}^{3+}$(4f$\text{}^{7}$) transitions. No ferromagnetic behavior was detected.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 243-248
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Quantized Absorption Strength of Multi-Exciton Quantum Dots
Autorzy:
Wójcik, K.
Grodecka, A.
Wójs, A.
Powiązania:
https://bibliotekanauki.pl/articles/2047045.pdf
Data publikacji:
2006-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.22.-f
78.67.Hc
71.35.-y
Opis:
Energy and absorption/recombination spectra of up to two electron-hole pairs confined in a spherical quantum dot are studied numerically as a function of dot radius (i.e., confinement volume). The transition between fermionic and bosonic behavior of the confined excitons is identified in coincidence with enhancement of low-energy absorption strength.
Źródło:
Acta Physica Polonica A; 2006, 110, 3; 423-428
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 52

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