Influence of Semiconductor Bands Bending on Exciton Photoluminescence

A theoretical model for calculation of the Wannier-Mott exciton distribution in semiconductor sample accounting for the energy bands bending near semiconductor surface is presented. It is shown that the exciton distribution essentially depends on the surface potential under certain sample surface and bulk parameters. Changing the surface potential value we can study the exciton photoluminescence from the illuminated surface and from a thin layer near this surface.