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Wyszukujesz frazę "Božek, P." wg kryterium: Autor

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    Wyświetlanie 1-10 z 10
    Tytuł:
    Photoreflectance Measurements of InGaAs/GaAs Quantum Wells
    Autorzy:
    Tomaszewicz, T.
    Korona, K. P.
    Bożek, R.
    Baranowski, J. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952324.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Bd
    73.20.Dx
    78.66.Fd
    Opis:
    Samples with InGaAs/GaAs quantum wells were grown by metallo-organic chemical vapour deposition in order to detect and analyze GaSb islands deposited on the surface. Results of photoreflectance measurements of quantum wells are reported. The correspondence between broadening of quantum well transition lines and GaSb structures has been observed.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 965-968
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Highly Compensated GaAs Crystal Obtained by Molecular CO Doping
    Autorzy:
    Bożek, R.
    Korona, K. P.
    Nowak, G.
    Wasik, D.
    Słupiński, T.
    Kaczor, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1929707.pdf
    Data publikacji:
    1993-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    78.55.-m
    78.20.Jq
    Opis:
    GaAs:C crystal was grown by liquid encapsulated Czochralski technique with large partial pressure of CO in ambient atmosphere p$\text{}_{CO}$/p$\text{}_{tot}$ = 0.2 and investigated using near and infrared absorption, photoluminescence, photoconductivity, photo-induced current transient spectroscopy and photo-Hall measurements. High resistivity of the crystal was found in electrical measurements (10$\text{}^{7}$ Ω cm, the Fermi level at 0.67 eV below conduction band at 300 K). Local vibrational mode revealed increased concentration of carbon acceptor and presence of oxygen related complexes. Photoluminescence spectra were dominated by two bands with peak energies at 1.49 eV and 0.8 eV. The near band gap emission shifts with excitation intensity up to 4 meV/decade. In photocurrent spectrum a strong photoionization band with E = 0.55 eV is observed.
    Źródło:
    Acta Physica Polonica A; 1993, 84, 4; 669-672
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Light Induced Modification of Graphene Oxide Layers on GaN Basis
    Autorzy:
    Łopion, A.
    Stobiński, L.
    Pakuła, K.
    Bożek, R.
    Kaźmierczak, P.
    Wysmołek, A.
    Stępniewski, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1185429.pdf
    Data publikacji:
    2016-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.22.-f
    78.55.-m
    78.30.-j
    07.05.Kf
    Opis:
    Graphene oxide suspension in various solvents was spin coated on metal organic vapor phase epitaxy grown GaN/saphire layers. Samples were characterised using the Raman spectroscopy and atomic force microscopy, before and after high temperature treatment. We found that graphene oxide was modifed by high temperature treatment, however a considerable modification was also observed as a result of impinged laser light incident due to the measurements. The Raman spectra were decomposed into two contributions showing different behaviour during the Raman scattering measurements.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 5; 1169-1171
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Tuning of Spectral Sensitivity of AlGaN/GaN UV Detector
    Autorzy:
    Korona, K. P.
    Drabińska, A.
    Trajnerowicz, A.
    Bożek, R.
    Pakuła, K.
    Baranowski, J. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2036867.pdf
    Data publikacji:
    2003-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Kp
    73.50.Pz
    78.40.Fy
    Opis:
    GaN/AlGaN photodetector that exhibits new interesting property is presented. Its spectral sensitivity depends upon bias voltage. Under positive or low negative bias the detector is sensitive mainly to the ultrafiolet radiation absorbed by AlGaN layer 3.7-3.8 eV. Under negative bias U$\text{}_{B}$ below -4 V, the detector is sensitive mainly to the radiation absorbed by GaN (3.4-3.6 eV). The effect can be explained based on numerical calculations of the electric field and potential profiles of this structure. The damping of GaN signal is attributed to activity of 2D electron gas formed on the GaN/AlGaN interface by spontaneous polarization. The reappearing of the signal is attributed to tunneling of holes through AlGaN, stimulated by a high electric field.
    Źródło:
    Acta Physica Polonica A; 2003, 103, 6; 675-681
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    ESR Spectroscopy of Graphene with Adsorbed NaCl Particles
    Autorzy:
    Karpierz, E.
    Drabińska, A.
    Bożek, R.
    Kaźmierczak, P.
    Wysmołek, A
    Kamińska, M
    Strupiński, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1376214.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.ue
    72.10.Fk
    78.67.Wj
    72.80.Vp
    Opis:
    Due to its peculiar properties graphene is a good candidate for sensor materials. Therefore, it is important to study influence of different fluids on graphene layer. The presented studies showed pinning of NaCl microcrystals to graphene surface after immersing graphene in NaCl solution and subsequent careful rinsing with distilled water. The atomic force microscopy images revealed presence of many NaCl-related structures over 100 nm high on graphene surface. The electron spin resonance spectrum for magnetic field perpendicular to the graphene layer consisted of several lines originating from NaCl. The pinning of NaCl microcrystals resulted in increase of electron scattering, as confirmed by the Raman spectroscopy (the increase of intensity of D and D' bands) and weak localization measurement (the decrease of coherence length).
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1187-1189
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical and Electrical Studies of FR1 and FR2 Defects in GaAs
    Autorzy:
    Dwiliński, R.
    Palczewska, M.
    Kaczor, P.
    Korona, K.
    Wysmołek, A.
    Bożek, R.
    Kamińska, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1920972.pdf
    Data publikacji:
    1992-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    78.50.Ge
    76.30.Mi
    Opis:
    The systematic EPR, optical absorption, photoluminescence and thermally stimulated current studies of acceptor defects in bulk GaAs were performed. For the first time, parallel EPR and optical absorption experiments allowed to find the absorption spectrum due to the photoionization of FR1 defect with the threshold at 0.19 eV. Photoluminescence studies showed two families of bands in the energy range of about 1.25 to 1.35 eV. We tentatively ascribed them to FR1 and FR2 complexes with shallow donors. Thermally stimulated current measurements showed two peaks at 90 K and 110 K assigned to FR1 and FR2 respectively.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 4; 613-616
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical and Electrical Measurements of Low-Temperature InAlAs
    Autorzy:
    Korona, K. P.
    Wysmołek, A.
    Bożek, R.
    Kamińska, M.
    Baranowski, J. M.
    Weber, E. R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1923833.pdf
    Data publikacji:
    1992-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    73.60.Br
    78.55.Cr
    Opis:
    Photoluminescence, photocurrent, thermally stimulated current and photoinduced current transient spectroscopy measurements done on molecular beam epitaxy In$\text{}_{0.52}$Al$\text{}_{0.48}$As layer, lattice matched to InP are reported. The investigated layers were grown on semi-insulating InP wafers, at temperature range from 215 to 450°C. It was found that the Fermi level was pinned to a dominant midgap center (most likely similar to EL2 center). Moreover, there were at least 7 other defects but with much smaller concentrations. Their activation energies were equal to 0.076, 0.11, 0.185, 0.295, 0.32 and 0.40 eV. The layers exhibited a very low luminescence and a small photocurrent.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 5; 825-828
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Spatially Resolved Micro-Luminescence from GaN/AlGaN Quantum Dots
    Autorzy:
    Chwalisz, B.
    Wysmołek, A.
    Bożek, R.
    Stępniewski, R.
    Pakuła, K.
    Kossacki, P.
    Golnik, A.
    Baranowski, J. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2038084.pdf
    Data publikacji:
    2004-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.66.Fd
    78.67.Hc
    75.75.+a
    68.65.Hb
    Opis:
    We report on the optical experiments performed on low density GaN/AlGaN quantum dots grown on sapphire substrate using SiN during the growth process. The existence of quantum dots in the investigated structures was confirmed by atomic force microscopy. Although macro-luminescence of the investigated structures consist of broad emission lines the micro-photoluminescence experiments performed with the spatial resolution of 0.25 μm revealed sharp emission lines from the individual quantum dot in the energy range of 3.20-3.55 eV. It is shown that the magnetic fields up to 7 T do not influence significantly the electronic states of the dots.
    Źródło:
    Acta Physica Polonica A; 2004, 105, 6; 517-521
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Potential and Carrier Distribution in AlGaN Superlattice
    Autorzy:
    Korona, K. P.
    Pakuła, K.
    Bożek, R.
    Drabińska, A.
    Surowiecka, K.
    Stępniewski, R.
    Zielińska-Rohozińska, E.
    Baranowski, J. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2043725.pdf
    Data publikacji:
    2005-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.40.+w
    73.61.Ey
    73.21.Cd
    Opis:
    Photocurrent spectroscopy and Kelvin force microscopy have been used in order to determine charge, field, and potential distributions in spontaneously grown superlattice. The spectra show that light can generate currents and potentials in both directions depending on photon energy. A numerical model made for superlattice of periodλ$\text{}_{SL}$ = 33 nm shows that electric field in superlattice oscillates coherently with Al content. The oscillations of electric field explain the different directions of photocurrent. The electric field can also separate electrons and holes, making carrier lifetimes longer and lowering excitation intensity threshold for occupation inversion.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 4; 723-729
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Localization Effects in GaN/AlGaN Quantum Well - Photoluminescence Studies
    Autorzy:
    Chwalisz, B.
    Wysmołek, A.
    Bożek, R.
    Korona, K. P.
    Stępniewski, R.
    Knap, W.
    Pakuła, K.
    Baranowski, J. M.
    Grandjean, N.
    Massies, J.
    Prystawko, P.
    Grzegory, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/2036024.pdf
    Data publikacji:
    2003-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    73.20.-r
    73.21.-b
    74.40.+k
    Opis:
    Exciton localization in GaN/AlGaN quantum well structures is studied by photoluminescence. An anomalous temperature behavior of the photoluminescence from the quantum well is observed. With increasing temperature the energy position of the excitonic emission line first decreases up to 20 K, then increases, reaching a maximum around 90 K, and then decreases again in the higher temperature range. The observed behavior is discussed in terms of localization at the interface potential fluctuations. It is argued that the temperature activated migration and subsequent release of the excitons from traps that occurs between 20 K and 90 K are responsible for the observed S-like shape of the energy dependence. The obtained results allow a direct characterization of the energy fluctuations present in GaN/AlGaN quantum wells grown by different techniques.
    Źródło:
    Acta Physica Polonica A; 2003, 103, 6; 573-578
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-10 z 10

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